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1. 发明授权

US08236701B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08236701B2
公开(公告)日：2012-08-07
申请号：US12393254
申请日：2009-02-26
申请人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
发明人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01J37/32935 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on a surface thereof a film composed of a metal of the same kind as the metal substance, is processed and particles of the metal are deposited on an inner wall of said processing chamber.
摘要翻译：等离子体处理装置包括布置在真空容器中的处理室。使用在处理室中形成的等离子体来处理放置在处理室中的样品台上的晶片。在蚀刻由金属物质和下面的氧化物膜或具有高介电常数的材料构成的晶片上设置的膜层之前，在其表面上设置由与金属物质相同种类的金属构成的膜的另一晶片，并且金属的颗粒沉积在所述处理室的内壁上。

2. 发明申请

US20110226734A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110226734A1
公开(公告)日：2011-09-22
申请号：US12855302
申请日：2010-08-12
申请人： MASAHIRO SUMIYA , MOTOHIRO TANAKA
发明人： MASAHIRO SUMIYA , MOTOHIRO TANAKA
IPC分类号： C23F1/04 , C23F1/08
CPC分类号： H01L21/0206 , H01J37/32192 , H01J37/3266 , H01L21/02002 , H01L21/02164 , H01L21/02274 , H01L21/02334 , H01L21/28123 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/67259
摘要： In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.
摘要翻译：在包括设置在真空室中的处理室的等离子体处理装置中，设置在处理室下方并且其顶表面上安装有待加工晶片的样品台，用于抽出处理室内部的真空减压单元为了降低其中的压力，以及设置在所述样品台上方的引入孔，以允许处理气体进入处理室，晶片的顶表面安装有膜结构，并且通过使用通过使用处理气体形成的等离子体蚀刻膜结构，膜结构通过在基板上从顶部到底部依次层叠抗蚀剂膜或掩模膜，多晶硅膜和绝缘膜，并且在晶片安装在样品台上之前和多晶硅蚀刻掩模膜下面的膜，在处理室内部形成等离子体，以覆盖处理室内的部件的表面含有Si成分的膜。

3. 发明申请

US20160114515A1 KNEADING AND GRANULATING APPARATUS 审中-公开
标题翻译：雕刻和造粒设备
公开(公告)号：US20160114515A1
公开(公告)日：2016-04-28
申请号：US14678496
申请日：2015-04-03
申请人： Naochika Asai , Motohiro Tanaka
发明人： Naochika Asai , Motohiro Tanaka
IPC分类号： B29C47/00 , B29C47/62 , B29C47/60 , B29C47/40
CPC分类号： B29C48/04 , B29B9/06 , B29C48/30 , B29C48/345 , B29C48/362 , B29C48/385 , B29C48/695 , B29K2105/251 , B29K2995/007
摘要： Provided is a kneading and granulating apparatus capable of adjusting the hardness of granules to be obtained with simple structure. The kneading and granulating apparatus includes a kneading section and a granulating section. The kneading section includes a first casing and two kneading shaft members. A plate-shaped first screen having a large number of holes formed therein is provided on a distal end portion of the first casing so as to close an opening portion of the first casing on the distal end side. A spacer is provided between the distal end portion of the first casing and the first screen, thereby being capable of changing a separation distance between a distal end portion of a screw portion of the kneading shaft member and the first screen.
摘要翻译：本发明提供一种能够以简单的结构调整所得到的颗粒的硬度的捏和造粒装置。捏合造粒装置包括捏合部和造粒部。捏合部包括第一壳体和两个捏合轴构件。在第一壳体的前端部设置有形成有多个孔的板状的第一筛网，以封闭第一壳体的前端侧的开口部。在第一壳体的前端部分与第一筛网之间设有间隔件，从而能够改变捏合轴构件的螺纹部分的末端部分与第一筛网之间的间隔距离。

4. 发明申请

US20130345588A1 NITROGEN OXIDE CONCENTRATION MEASUREMENT DEVICE 审中-公开
标题翻译：氮氧化物浓度测量装置
公开(公告)号：US20130345588A1
公开(公告)日：2013-12-26
申请号：US14004542
申请日：2012-03-05
申请人： Hideshi Miki , Motohiro Tanaka , Fumiya Matsubara
发明人： Hideshi Miki , Motohiro Tanaka , Fumiya Matsubara
IPC分类号： A61B5/08
CPC分类号： A61B5/082 , G01N21/314 , G01N33/0037 , G01N33/497 , G01N2021/3137 , Y02A50/245
摘要： A nitrogen oxide concentration measurement device comprises a zero scrubber disposed within a gas flow path, and a controller. The zero scrubber performs subjects exhaled air flowing through the gas flow path from a mouthpiece toward a chamber to a NO removal treatment in a first period, out of a first period and a second period. The controller acquires the concentration of NO contained in the exhaled air on the basis of the differential voltage value outputted in the second period, which uses as a reference the differential voltage value outputted in the first period.
摘要翻译：氮氧化物浓度测量装置包括设置在气体流路内的零洗涤器和控制器。零洗涤器在第一时段和第二时段内，在第一时间段内，将从气嘴朝向气室的气体流动路径的呼出空气进行到NO去除处理。控制器基于在第一时段中输出的差分电压值作为基准的第二时段中输出的差分电压值，获取呼出空气中所含的NO浓度。

5. 发明授权

US08557709B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08557709B2
公开(公告)日：2013-10-15
申请号：US12855302
申请日：2010-08-12
申请人： Masahiro Sumiya , Motohiro Tanaka
发明人： Masahiro Sumiya , Motohiro Tanaka
IPC分类号： H01L21/302
CPC分类号： H01L21/0206 , H01J37/32192 , H01J37/3266 , H01L21/02002 , H01L21/02164 , H01L21/02274 , H01L21/02334 , H01L21/28123 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/67259
摘要： In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.
摘要翻译：在包括设置在真空室中的处理室的等离子体处理装置中，设置在处理室下方并且其顶表面上安装有待加工晶片的样品台，用于抽出处理室内部的真空减压单元为了降低其中的压力，以及设置在所述样品台上方的引入孔，以允许处理气体进入处理室，晶片的顶表面安装有膜结构，并且通过使用通过使用处理气体形成的等离子体蚀刻膜结构，膜结构通过在基板上从顶部到底部依次层叠抗蚀剂膜或掩模膜，多晶硅膜和绝缘膜，并且在晶片安装在样品台上之前和多晶硅蚀刻掩模膜下面的膜，在处理室内部形成等离子体，以覆盖处理室内的部件的表面含有Si成分的膜。

6. 发明申请

US20120252200A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120252200A1
公开(公告)日：2012-10-04
申请号：US13524914
申请日：2012-06-15
申请人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
发明人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
IPC分类号： H01L21/28
CPC分类号： H01L21/32136 , H01J37/32935 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on surface thereof a film composed of a metal of the same kind as the metal substance, processed and particles of the metal are deposited on an inner wall of said processing chamber.
摘要翻译：等离子体处理装置包括布置在真空容器中的处理室。使用在处理室中形成的等离子体来处理放置在处理室中的样品台上的晶片。在蚀刻设置在由金属物质和下面的氧化物膜或具有高介电常数的材料构成的晶片上的膜层之前，在其表面上设置由与金属物质相同种类的金属构成的膜的另一晶片，处理的金属颗粒沉积在所述处理室的内壁上。

7. 发明申请

US20110171833A1 DRY ETCHING METHOD OF HIGH-K FILM 审中-公开
标题翻译：高K膜的干蚀刻方法
公开(公告)号：US20110171833A1
公开(公告)日：2011-07-14
申请号：US13072904
申请日：2011-03-28
申请人： Koichi NAKAUNE , Masatoshi OYAMA , Motohiro TANAKA , Hitoshi TAMURA , Masamichi SAKAGUCHI
发明人： Koichi NAKAUNE , Masatoshi OYAMA , Motohiro TANAKA , Hitoshi TAMURA , Masamichi SAKAGUCHI
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.
摘要翻译：本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅的高选择性电影。在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

8. 发明授权

US07955514B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07955514B2
公开(公告)日：2011-06-07
申请号：US11679926
申请日：2007-02-28
申请人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
发明人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32477 , H01J37/32623 , H01J37/32834 , H01J37/32862
摘要： A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.
摘要翻译：一种等离子体处理装置，其具有处理室和样品基底，并且通过使用在处理室内产生的等离子体处理样品，处理室位于真空容器内，样品基座位于处理室内部，样品被安装在样品基体上，等离子体处理装置包括构成处理室的内侧壁面的构成部件，在内侧壁面上具有电介质部分，排出处理室内部的排出部，以及电场供给单元，用于在处理室内不产生等离子体的状态下向构件部件供给电场，其中，从电场供给单元供给的电场的大小迅速变化，同时排出通过排气单元在处理室内部。

9. 发明申请

US20090065479A1 DRY ETCHING METHOD OF HIGH-K FILM 审中-公开
标题翻译：高K膜的干蚀刻方法
公开(公告)号：US20090065479A1
公开(公告)日：2009-03-12
申请号：US12016434
申请日：2008-01-18
申请人： Koichi NAKAUNE , Masatoshi Oyama , Motohiro Tanaka , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Koichi NAKAUNE , Masatoshi Oyama , Motohiro Tanaka , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23F1/00
CPC分类号： H01L21/31122
摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.
摘要翻译：本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅潜在的高选择性电影。在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

10. 发明申请

US20080169065A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080169065A1
公开(公告)日：2008-07-17
申请号：US11679926
申请日：2007-02-28
申请人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
发明人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
IPC分类号： C23F1/00
CPC分类号： H01J37/32477 , H01J37/32623 , H01J37/32834 , H01J37/32862
摘要： A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.
摘要翻译：一种等离子体处理装置，其具有处理室和样品基底，并且通过使用在处理室内产生的等离子体处理样品，处理室位于真空容器内，样品基座位于处理室内部，样品被安装在样品基底上，等离子体处理装置包括构成处理室的内侧壁面的构成部件，在内侧壁面上具有电介质部分，排出处理室内部的排气单元，以及电场供给单元，用于在处理室内不产生等离子体的状态下向构件部件供给电场，其中，从电场供给单元供给的电场的大小迅速变化，同时排出通过排气单元在处理室内部。

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