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1. 发明授权

US09368377B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09368377B2
公开(公告)日：2016-06-14
申请号：US11836219
申请日：2007-08-09
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32 , C23C16/46 , F25B41/06
CPC分类号： H01L21/67109 , C23C16/463 , F25B41/062 , H01J37/32431 , H01J2237/2001 , H01L21/6831 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.
摘要翻译：本发明提供了一种用于静电吸附电极的温度控制单元，其能够在宽的温度范围内快速控制晶片温度，而不会在施加高晶片偏置功率的同时进行高热输入蚀刻的同时不影响面内均匀性。设置在静电吸附电极中的制冷剂流路用作蒸发器。制冷剂流路连接到压缩机，冷凝器和第一膨胀阀，以形成直接膨胀型制冷循环。第二膨胀阀安装在静电吸附电极和压缩机之间，以调节制冷剂的流量。这使得可以压缩静电吸附电极的制冷剂流路中的制冷剂，并且通过提高制冷剂蒸发温度将晶片温度调节到高水平。此外，采用薄壁圆柱形制冷剂流动路径，使得薄壁圆筒仅由制冷剂压力略微变形。

2. 发明授权

US09150964B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US09150964B2
公开(公告)日：2015-10-06
申请号：US12191373
申请日：2008-08-14
申请人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Kenji Maeda
发明人： Hiroyuki Kobayashi , Masaru Izawa , Kenetsu Yokogawa , Kenji Maeda
IPC分类号： C23C14/00 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/4401 , H01L21/67201 , H01L21/67745
摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
摘要翻译：通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量。用于容纳气体扩散器的气体扩散室安装在真空处理装置中。

3. 发明授权

US08833089B2 Plasma processing apparatus and maintenance method therefor 有权
标题翻译：等离子体处理装置及其维护方法
公开(公告)号：US08833089B2
公开(公告)日：2014-09-16
申请号：US12538986
申请日：2009-08-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： F25B9/00 , F25B45/00 , H01J37/32
CPC分类号： H01J37/32091 , F25B45/00 , F25B2500/06 , H01J2237/2001
摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.
摘要翻译：在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护。在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂再次。

4. 发明授权

US08333847B2 Chemical conversion treatment liquid 有权
标题翻译：化学转化处理液
公开(公告)号：US08333847B2
公开(公告)日：2012-12-18
申请号：US13039656
申请日：2011-03-03
申请人： Masaru Izawa , Kunio Goto
发明人： Masaru Izawa , Kunio Goto
IPC分类号： C23C22/18 , C23C22/12
CPC分类号： C23C22/08 , C23C22/00 , C23C22/12 , C23C22/18 , Y10T428/13 , Y10T428/264 , Y10T428/265
摘要： A chemical conversion treatment liquid which can stably form a phosphate-type chemical conversion film on a steel material for a joint portion of an oil well steel pipe containing 0.5-13% Cr is developed.Using a chemical conversion treatment liquid to which a prescribed amount of potassium is added, a chemical conversion film containing a prescribed amount of potassium compounds and having a prescribed thickness can be formed on the threaded surface of a joint portion of an oil well steel pipe.
摘要翻译：开发了可以在含有0.5-13％Cr的油井钢管的接头部分的钢材上稳定地形成磷酸酯型化学转化膜的化学转化处理液。使用含有规定量的钾的化学转化处理液，能够在油井钢管的接合部的螺纹面上形成含有规定量的钾化合物并具有规定厚度的化学转化膜。

5. 发明申请

US20120273132A1 Vacuum Processing Apparatus And Plasma Processing Apparatus With Temperature Control Function For Wafer Stage 审中-公开
标题翻译：具有晶片级温度控制功能的真空处理装置和等离子体处理装置
公开(公告)号：US20120273132A1
公开(公告)日：2012-11-01
申请号：US13546071
申请日：2012-07-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A plasma processing apparatus includes a processing chamber, a wafer table, a refrigerant passage disposed inside the wafer table in which a refrigerant flows, a refrigeration cycle comprising the refrigerant passage in the wafer table as a first evaporator in which the refrigerant is evaporated as a result of a heat-exchange therein, a compressor, a condenser and an expansion valve, a second evaporator, and a controlling unit which adjusts a number of rotations of the compressor based upon a degree of dryness of the refrigerant at a position on the refrigeration cycle after passing through the first evaporation in a range in which dry-out does not occur in the first evaporator, and the dryness of the refrigerant being determined based upon an amount of a heat exchange during the evaporation of the refrigerant in the second evaporator.
摘要翻译：等离子体处理装置包括处理室，晶片台，布置在制冷剂流动的晶片台内部的制冷剂通道，制冷循环，其包括作为制冷剂蒸发的第一蒸发器的晶片台中的制冷剂通路，其中热交换的结果，压缩机，冷凝器和膨胀阀，第二蒸发器和控制单元，其基于制冷剂位置上的制冷剂的干燥程度来调节压缩机的转数在第一蒸发器中不发生干燥的范围内经过第一蒸发之后的循环，并且基于在第二蒸发器中的制冷剂的蒸发期间的热交换量来确定制冷剂的干燥度。

6. 发明授权

US08187485B2 Plasma processing apparatus including etching processing apparatus and ashing processing apparatus and plasma processing method using plasma processing apparatus 失效
公开(公告)号：US08187485B2
公开(公告)日：2012-05-29
申请号：US12840847
申请日：2010-07-21
申请人： Hiroyuki Kobayashi , Masaru Izawa
发明人： Hiroyuki Kobayashi , Masaru Izawa
IPC分类号： H01L21/465
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

7. 发明申请

US20110030899A1 PLASMA PROCESSING APPARATUS USING TRANSMISSION ELECTRODE 审中-公开
标题翻译：使用传输电极的等离子体处理设备
公开(公告)号：US20110030899A1
公开(公告)日：2011-02-10
申请号：US12709149
申请日：2010-02-19
申请人： Keizo SUZUKI , Masaru Izawa , Nobuyuki Negishi , Kenetsu Yokogawa , Kenji Maeda
发明人： Keizo SUZUKI , Masaru Izawa , Nobuyuki Negishi , Kenetsu Yokogawa , Kenji Maeda
IPC分类号： C23F1/08 , C23C16/00 , C23C16/50
CPC分类号： H01J37/3255 , H01J37/32091 , H01J37/32577
摘要： At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation.
摘要翻译：放电电磁波的至少一部分经由具有作为放电电磁波的电介质（电绝缘体）的特性的透射电极被引入处理室，并且作为用于RF偏置电磁的导电性材料离子等离子体振荡的电磁波波。

8. 发明申请

US20100297849A1 PLASMA ETCHING METHOD FOR ETCHING AN OBJECT 审中-公开
标题翻译：用于蚀刻对象的等离子体蚀刻方法
公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
申请人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
发明人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译：本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

9. 发明授权

US07838792B2 Plasma processing apparatus capable of adjusting temperature of sample stand 有权
标题翻译：能够调节样品台温度的等离子体处理装置
公开(公告)号：US07838792B2
公开(公告)日：2010-11-23
申请号：US11512118
申请日：2006-08-30
申请人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
IPC分类号： B23K9/02 , H05H1/24
CPC分类号： H01L21/67248 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要翻译：提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。

10. 发明授权

US07666266B2 Surface conditioning prior to chemical conversion treatment of a steel member 有权
标题翻译：钢构件化学转化处理前的表面处理
公开(公告)号：US07666266B2
公开(公告)日：2010-02-23
申请号：US11445151
申请日：2006-06-02
申请人： Masaru Izawa , Kunio Godo , Yoshihisa Ujita , Noriko Ujita, legal representative , Takahiro Takano
发明人： Masaru Izawa , Kunio Godo , Yoshihisa Ujita , Takahiro Takano
IPC分类号： C23C22/78 , C23C22/18 , C23C22/00
CPC分类号： F16L15/001 , C23C22/78 , F16L58/182
摘要： By subjecting a threaded joint for OCTG (oil country tubular goods) to surface conditioning with an aqueous solution of potassium tetraborate or sodium tetraborate prior to manganese phosphate chemical conversion treatment, a manganese phosphate chemical conversion coating having coarse crystal grains with an average crystal grain diameter of 10-110 micrometers is formed on the surface of the steel member which may be any steel including a high Cr steel. This manganese phosphate chemical conversion coating can hold a large amount of a liquid lubricant, and it is effective at preventing the occurrence of galling at the time of makeup of a threaded joint for OCTG.
摘要翻译：通过在磷酸锰化学转化处理之前，用四甲基硼酸钾或四硼酸钠的水溶液对OCTG（油料管状物品）的螺纹接头进行表面调理，将具有平均晶粒直径的粗晶粒的磷酸锰化学转化膜在钢构件的表面上形成10-110微米，其可以是包括高Cr钢的任何钢。该磷酸锰化学转化膜可以容纳大量的液体润滑剂，并且在OCTG的螺纹接头构成时防止发生磨损是有效的。

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