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    • 2. 发明授权
    • Semiconductor photodetector and radiation detecting apparatus
    • 半导体光电检测器和放射线检测装置
    • US08084836B2
    • 2011-12-27
    • US11645800
    • 2006-12-27
    • Tatsumi YamanakaMasanori SaharaHideki Fujiwara
    • Tatsumi YamanakaMasanori SaharaHideki Fujiwara
    • H01L31/06
    • H01L27/14603H01L27/14634H01L27/1464H01L27/14654
    • A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.
    • 光电二极管阵列PD1包括n型半导体衬底,其一面是要检测的光的入射表面; 多个pn结型感光区域3,形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。 载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。 从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。
    • 3. 发明申请
    • DISTANCE IMAGE SENSOR
    • 距离图像传感器
    • US20100078749A1
    • 2010-04-01
    • US12514898
    • 2007-11-13
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • H01L31/101
    • G01C3/085G01S17/36G01S17/89H01L27/1443H01L27/14618H01L27/1464H01L27/14665H01L2924/0002H01L2924/00
    • In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.
    • 在范围图像传感器8中,当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时,从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接,以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此,由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外,当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时,彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此,由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。
    • 9. 发明授权
    • Distance image sensor
    • 距离图像传感器
    • US08013413B2
    • 2011-09-06
    • US12514898
    • 2007-11-13
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • H01L27/146
    • G01C3/085G01S17/36G01S17/89H01L27/1443H01L27/14618H01L27/1464H01L27/14665H01L2924/0002H01L2924/00
    • In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.
    • 在范围图像传感器8中,当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时,从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接,以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此,由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外,当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时,彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此,由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。