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    • 5. 发明授权
    • Distance image sensor
    • 距离图像传感器
    • US08013413B2
    • 2011-09-06
    • US12514898
    • 2007-11-13
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • H01L27/146
    • G01C3/085G01S17/36G01S17/89H01L27/1443H01L27/14618H01L27/1464H01L27/14665H01L2924/0002H01L2924/00
    • In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.
    • 在范围图像传感器8中,当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时,从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接,以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此,由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外,当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时,彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此,由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。
    • 7. 发明授权
    • Fuel injection system for diesel engine
    • 柴油机燃油喷射系统
    • US4640252A
    • 1987-02-03
    • US694960
    • 1985-01-25
    • Saburo NakamuraTsutomu MatsuokaHirofumi YamauchiMasanori Sahara
    • Saburo NakamuraTsutomu MatsuokaHirofumi YamauchiMasanori Sahara
    • F02B3/06F02D41/40F02M45/08F02M61/06F02M61/16F02M39/00
    • F02M61/06F02D41/40F02M45/08F02M61/161F02B3/06Y02T10/44
    • The fuel injection system for a diesel engine comprises a pintle type fuel injection nozzle having a valve needle slidable back and forth in the axial direction thereof between a first position in which its front end portion is inserted in a spray hole and a second position in which its front end portion is retracted from the spray hole, fuel supply means for feeding pressurized fuel to the fuel injection nozzle, and a plunger member which is slidable in the axial direction of the valve needle and provided with a front end face opposed to the rear end face of the valve needle and a rear end face adapted to receive the pressure of the pressurized fuel fed to the fuel injection nozzle from the fuel supply means, the valve needle being adapted to be lifted by a predetermined fuel pressure to a pre-lift position where the rear end face of the valve needle abuts against the front end face of the plunger member so that further lift of the valve needle is suppressed by the fuel pressure acting on the rear end face of the plunger member, thereby changing the valve opening pressure stepwise with change in the amount of lift of the valve. The injection system is provided with pre-lift change means for changing the amount of the pre-lift of the valve needle, an operating condition detecting means for detecting the operating condition of the engine, and a control means for controlling the pre-lift change means according to the output of the operating condition detecting means.
    • 用于柴油发动机的燃料喷射系统包括:枢轴式燃料喷射喷嘴,其具有可在其前端部插入喷孔中的第一位置和第二位置之间沿轴向方向前后滑动的阀针, 其前端部从喷孔缩回,用于将加压燃料供给到燃料喷射喷嘴的燃料供给装置以及能够沿着阀针的轴向滑动并且设置有与后方相对的前端面的柱塞部件 阀针的端面和适于从燃料供给装置接收供给燃料喷射喷嘴的加压燃料的压力的后端面,阀针适于以预定的燃料压力提升到预升程 阀针的后端面抵靠柱塞构件的前端面的位置,使得通过燃料压力肌动蛋白抑制阀针的进一步升高 g在柱塞构件的后端面上,从而随着阀的升程量的变化逐步改变阀打开压力。 注射系统设置有用于改变阀针的预升程量的预升降机改变装置,用于检测发动机的运行状态的操作条件检测装置,以及用于控制预升降变化的控制装置 根据操作条件检测装置的输出的装置。
    • 8. 发明授权
    • Semiconductor photodetector and radiation detecting apparatus
    • 半导体光电检测器和放射线检测装置
    • US08084836B2
    • 2011-12-27
    • US11645800
    • 2006-12-27
    • Tatsumi YamanakaMasanori SaharaHideki Fujiwara
    • Tatsumi YamanakaMasanori SaharaHideki Fujiwara
    • H01L31/06
    • H01L27/14603H01L27/14634H01L27/1464H01L27/14654
    • A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.
    • 光电二极管阵列PD1包括n型半导体衬底,其一面是要检测的光的入射表面; 多个pn结型感光区域3,形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。 载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。 从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。
    • 9. 发明申请
    • DISTANCE IMAGE SENSOR
    • 距离图像传感器
    • US20100078749A1
    • 2010-04-01
    • US12514898
    • 2007-11-13
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • Masanori SaharaMitsutaka TakemuraKoei Yamamoto
    • H01L31/101
    • G01C3/085G01S17/36G01S17/89H01L27/1443H01L27/14618H01L27/1464H01L27/14665H01L2924/0002H01L2924/00
    • In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.
    • 在范围图像传感器8中,当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时,从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接,以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此,由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外,当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时,彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此,由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。