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1. 发明专利

IL198839A Semiconductor photodetector and radiation detecting apparatus 未知
公开(公告)号：IL198839A
公开(公告)日：2017-04-30
申请号：IL19883909
申请日：2009-05-20
申请人： HAMAMATSU PHOTONICS KK , TATSUMI YAMANAKA , MASANORI SAHARA , HIDEKI FUJIWARA
发明人： TATSUMI YAMANAKA , MASANORI SAHARA , HIDEKI FUJIWARA
IPC分类号： H01L20060101 , H01L27/146 , H01L31/10 , H04N5/32 , H04N5/359 , H04N5/369 , H04N5/374
摘要： A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

2. 发明专利

IL175082D0 SEMICONDUCTOR PHOTODETECTOR AND RADIATION DETECTING APPARATUS 未知
公开(公告)号：IL175082D0
公开(公告)日：2006-08-20
申请号：IL17508206
申请日：2006-04-20
申请人： HAMAMATSU PHOTONICS KK , TATSUMI YAMANAKA
IPC分类号： G01T1/20 , H01L20100101 , H01L27/14 , H01L27/144 , H01L27/146 , H01L27/148 , H01L31/06 , H01L31/10
摘要： On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.

3. 发明授权

US08592934B2 Semiconductor photo-detection device and radiation detection apparatus 有权
标题翻译：半导体光检测装置及放射线检测装置
公开(公告)号：US08592934B2
公开(公告)日：2013-11-26
申请号：US11635025
申请日：2006-12-07
申请人： Tatsumi Yamanaka
发明人： Tatsumi Yamanaka
IPC分类号： H01L27/146
CPC分类号： G01T1/2018 , G01T1/2006 , H01L27/1446 , H01L27/1463 , H01L27/1464 , H01L27/14661 , H01L31/118
摘要： On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.
摘要翻译：在n型半导体衬底5的正面上，p型区域7被二维排列成阵列。在彼此相邻的p型区域7之间设置有高浓度的n型区域9和p型区域11。通过从基板5的正面侧扩散n型杂质，以从正面看，包围p型区域7，形成高浓度n型区域9。 p型区域11通过从基板5的前侧扩散p型杂质而形成，以便包围从正面观察的p型区域7和高浓度n型区域9。在n型半导体基板5的正面形成有与p型区域7电连接的电极15和与高浓度n型区域9和p型区域11电连接的电极19。这实现了半导体光电检测器和放射线检测装置，其可以有利地抑制串扰的发生，并且即使当光电二极管由于初始连接误差而导致连接点断裂时，光电二极管处于电浮置状态时也抑制载流子流入相邻的光电二极管，温度循环等

4. 发明授权

US07170143B2 Semiconductor photo-detection device and radiation apparatus 有权
标题翻译：半导体光检测装置及辐射装置
公开(公告)号：US07170143B2
公开(公告)日：2007-01-30
申请号：US10829385
申请日：2004-04-22
申请人： Tatsumi Yamanaka
发明人： Tatsumi Yamanaka
IPC分类号： H01L31/06
CPC分类号： G01T1/2018 , G01T1/2006 , H01L27/1446 , H01L27/1463 , H01L27/1464 , H01L27/14661 , H01L31/118
摘要： On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.
摘要翻译：在n型半导体衬底5的正面上，p型区域7被二维排列成阵列。在彼此相邻的p型区域7之间设置有高浓度的n型区域9和p型区域11。通过从基板5的正面侧扩散n型杂质，以从正面看，包围p型区域7，形成高浓度n型区域9。 p型区域11通过从基板5的前侧扩散p型杂质而形成，以便包围从正面观察的p型区域7和高浓度n型区域9。在n型半导体基板5的正面形成有与p型区域7电连接的电极15和与高浓度n型区域9和p型区域11电连接的电极19。这实现了半导体光电检测器和放射线检测装置，其可以有利地抑制串扰的发生，并且即使当光电二极管由于初始连接误差而导致连接点断裂时，光电二极管处于电浮置状态时也抑制载流子流入相邻的光电二极管，温度循环等

5. 发明申请

US20060165294A1 Optical sensor 有权
标题翻译：光学传感器
公开(公告)号：US20060165294A1
公开(公告)日：2006-07-27
申请号：US10504267
申请日：2003-02-12
申请人： Seiichiro Mizuno , Tatsumi Yamanaka , Yoshimoto Fuji
发明人： Seiichiro Mizuno , Tatsumi Yamanaka , Yoshimoto Fuji
IPC分类号： G06K9/62
CPC分类号： H01L25/167 , G01J1/44 , H01L27/14609 , H01L27/14634 , H01L2924/0002 , H04N5/37457 , H01L2924/00
摘要： Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.
摘要翻译：光检测器1配备有光电二极管PDn，积分电路10 n，CDS电路20 n和保持电路30 n。每个积分电路10n包括放大器11n，电容器C和开关SW。光电二极管PDn在第一衬底100上对齐。每个积分电路10 n的放大器11n，电容器C等的差分对输入部分（晶体管T 1和T 2）被布置在第二基板 200。每个积分电路10 n的放大器11 n等的驱动部分（晶体管T 5和T 6）设置在第三基板300上。

6. 发明申请

US20050082630A1 Semiconductor photo-detection device and radiation apparatus 有权
标题翻译：半导体光检测装置及辐射装置
公开(公告)号：US20050082630A1
公开(公告)日：2005-04-21
申请号：US10829385
申请日：2004-04-22
申请人： Tatsumi Yamanaka
发明人： Tatsumi Yamanaka
IPC分类号： H01L27/14 , H01L27/144 , H01L27/146 , H01L27/148 , H01L31/06
CPC分类号： G01T1/2018 , G01T1/2006 , H01L27/1446 , H01L27/1463 , H01L27/1464 , H01L27/14661 , H01L31/118
摘要： On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.
摘要翻译：在n型半导体衬底5的正面上，p型区域7被二维排列成阵列。在彼此相邻的p型区域7之间设置有高浓度的n型区域9和p型区域11。通过从基板5的正面侧扩散n型杂质，以从正面看，包围p型区域7，形成高浓度n型区域9。 p型区域11通过从基板5的前侧扩散p型杂质而形成，以便包围从正面观察的p型区域7和高浓度n型区域9。在n型半导体基板5的正面形成有与p型区域7电连接的电极15和与高浓度n型区域9和p型区域11电连接的电极19。这实现了半导体光电检测器和放射线检测装置，其可以有利地抑制串扰的发生，并且即使当光电二极管由于初始连接误差而导致连接点断裂时，光电二极管处于电浮置状态时也抑制载流子流入相邻的光电二极管，温度循环等

7. 发明授权

US08084836B2 Semiconductor photodetector and radiation detecting apparatus 有权
标题翻译：半导体光电检测器和放射线检测装置
公开(公告)号：US08084836B2
公开(公告)日：2011-12-27
申请号：US11645800
申请日：2006-12-27
申请人： Tatsumi Yamanaka , Masanori Sahara , Hideki Fujiwara
发明人： Tatsumi Yamanaka , Masanori Sahara , Hideki Fujiwara
IPC分类号： H01L31/06
CPC分类号： H01L27/14603 , H01L27/14634 , H01L27/1464 , H01L27/14654
摘要： A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.
摘要翻译：光电二极管阵列PD1包括n型半导体衬底，其一面是要检测的光的入射表面; 多个pn结型感光区域3，形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。

8. 发明申请

US20080149943A1 Semiconductor photodetector and radiation detecting apparatus 有权
标题翻译：半导体光电检测器和放射线检测装置
公开(公告)号：US20080149943A1
公开(公告)日：2008-06-26
申请号：US11645800
申请日：2006-12-27
申请人： Tatsumi Yamanaka , Masanori Sahara , Hideki Fujiwara
发明人： Tatsumi Yamanaka , Masanori Sahara , Hideki Fujiwara
IPC分类号： H01L31/06 , H01L31/12
CPC分类号： H01L27/14603 , H01L27/14634 , H01L27/1464 , H01L27/14654
摘要： A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.
摘要翻译：光电二极管阵列PD1包括n型半导体衬底，其一面是要检测的光的入射表面; 多个pn结型感光区域3，形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。

9. 发明授权

US07336808B2 Optical sensor 有权
标题翻译：光学传感器
公开(公告)号：US07336808B2
公开(公告)日：2008-02-26
申请号：US10504267
申请日：2003-02-12
申请人： Seiichiro Mizuno , Tatsumi Yamanaka , Yoshimaro Fujii
发明人： Seiichiro Mizuno , Tatsumi Yamanaka , Yoshimaro Fujii
IPC分类号： G06K9/00
CPC分类号： H01L25/167 , G01J1/44 , H01L27/14609 , H01L27/14634 , H01L2924/0002 , H04N5/37457 , H01L2924/00
摘要： Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.
摘要翻译：光检测器1配备有光电二极管PDn，积分电路10 n，CDS电路20 n和保持电路30 n。每个积分电路10 n包括放大器11n，电容器C和开关SW。光电二极管PDn在第一衬底100上对齐。每个积分电路10 n的放大器11n，电容器C等的差分对输入部分（晶体管T 1和T 2）被布置在第二基板 200。每个积分电路10 n的放大器11 n等的驱动部分（晶体管T 5和T 6）设置在第三基板300上。

10. 发明申请

US20070075344A1 Semiconductor photo-detection device and radiation detection apparatus 有权
标题翻译：半导体光检测装置及放射线检测装置
公开(公告)号：US20070075344A1
公开(公告)日：2007-04-05
申请号：US11635025
申请日：2006-12-07
申请人： Tatsumi Yamanaka
发明人： Tatsumi Yamanaka
IPC分类号： H01L31/113
CPC分类号： G01T1/2018 , G01T1/2006 , H01L27/1446 , H01L27/1463 , H01L27/1464 , H01L27/14661 , H01L31/118
摘要： On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.
摘要翻译：在n型半导体衬底5的正面上，p型区域7被二维排列成阵列。在彼此相邻的p型区域7之间设置有高浓度的n型区域9和p型区域11。通过从基板5的正面侧扩散n型杂质，以从正面看，包围p型区域7，形成高浓度n型区域9。 p型区域11通过从基板5的前侧扩散p型杂质而形成，以便包围从正面观察的p型区域7和高浓度n型区域9。在n型半导体基板5的正面形成有与p型区域7电连接的电极15和与高浓度n型区域9和p型区域11电连接的电极19。这实现了半导体光电检测器和放射线检测装置，其可以有利地抑制串扰的发生，并且即使当光电二极管由于初始连接误差而导致连接点断裂时，光电二极管处于电浮置状态时也抑制载流子流入相邻的光电二极管，温度循环等

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