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1. 发明授权

US07998867B2 Method for manufacturing epitaxial wafer 有权
标题翻译：外延晶片制造方法
公开(公告)号：US07998867B2
公开(公告)日：2011-08-16
申请号：US12740441
申请日：2008-11-06
申请人： Kazushige Takaishi , Tomonori Miura
发明人： Kazushige Takaishi , Tomonori Miura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/4401 , C30B25/12 , C30B29/06 , H01L21/02532 , H01L21/0262 , H01L21/68757
摘要： An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.
摘要翻译：提供了能够消除器件工艺中的颗粒的外延晶片，颗粒是从晶片的后表面和倒角表面之间的边界区域中的划痕产生的。在刮除过程中，在后表面和倒角表面之间的边界区域中的划痕被去除。因此，在器件工艺中浸渍在蚀刻溶液中时，由划痕引起的颗粒不存在，从而提高了器件的产率。

2. 发明申请

US20100261341A1 METHOD FOR MANUFACTURING EPITAXIAL WAFER 有权
标题翻译：制造外延波形的方法
公开(公告)号：US20100261341A1
公开(公告)日：2010-10-14
申请号：US12740441
申请日：2008-11-06
申请人： Kazushige Takaishi , Tomonori Miura
发明人： Kazushige Takaishi , Tomonori Miura
IPC分类号： H01L21/20
CPC分类号： C23C16/4401 , C30B25/12 , C30B29/06 , H01L21/02532 , H01L21/0262 , H01L21/68757
摘要： An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.
摘要翻译：提供了能够消除器件工艺中的颗粒的外延晶片，颗粒是从晶片的后表面和倒角表面之间的边界区域中的划痕产生的。在刮除过程中，在后表面和倒角表面之间的边界区域中的划痕被去除。因此，在器件工艺中浸渍在蚀刻溶液中时，由划痕引起的颗粒不存在，从而提高了器件的产率。

3. 发明申请

US20090304490A1 METHOD FOR HOLDING SILICON WAFER 审中-公开
标题翻译：保持硅波的方法
公开(公告)号：US20090304490A1
公开(公告)日：2009-12-10
申请号：US12135805
申请日：2008-06-09
申请人： Takayuki Kihara , Masataka Hourai , Yuki Murata , Kazushige Takaishi , Seiji Sugimoto , Tadashi Kanda
发明人： Takayuki Kihara , Masataka Hourai , Yuki Murata , Kazushige Takaishi , Seiji Sugimoto , Tadashi Kanda
IPC分类号： H01L21/67
CPC分类号： H01L21/6732
摘要： The present invention is directed to provide a method for holding a silicon wafer, which can reduce contact scratches in contact with support members when holding a back surface of the silicon wafer, as well as prevent the wafer from bending when holding the back surface of the silicon wafer. The back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from a center thereof. The silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. The silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member.
摘要翻译：本发明的目的在于提供一种保持硅晶片的方法，当保持硅晶片的背面时，可以减少与支撑部件接触的接触划痕，并且当保持硅晶片的背面时，防止晶片弯曲硅晶片。直径为300毫米，厚度为700微米至1000微米的硅晶片的背面保持与支撑构件或抽吸构件接触，特别是保持在硅晶片的半径为0.50至 0.80从其中心。硅晶片保持在晶片平面内的最大位移量为300微米以下的状态。在保持硅晶片的背面与支撑构件或抽吸构件接触的所有过程中，硅晶片背面保持在保持区域内。

4. 发明申请

US20090298397A1 METHOD OF GRINDING SEMICONDUCTOR WAFERS AND DEVICE FOR GRINDING BOTH SURFACES OF SEMICONDUCTOR WAFERS 审中-公开
标题翻译：研磨半导体晶片的方法和研磨半导体晶片表面的器件
公开(公告)号：US20090298397A1
公开(公告)日：2009-12-03
申请号：US12470961
申请日：2009-05-22
申请人： Yasunori YAMADA , Yuichi KAKIZONO , Kazushige TAKAISHI
发明人： Yasunori YAMADA , Yuichi KAKIZONO , Kazushige TAKAISHI
IPC分类号： B24B7/26 , B24B1/00
CPC分类号： B24B37/28
摘要： A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers being ground by rotating the multiple semiconductor wafers between a pair of upper and lower rotating surface plates in a state where the multiple wafers are held on a carrier so that centers of the multiple wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the multiple wafers to an area of one of the multiple wafers is greater than or equal to 1.33 but less than 2.0; a rotational speed of the multiple wafers falls within a range of 5 to 80 rpm; and the grinding of the multiple wafers with the rotating surface plates are conducted with fixed abrasive grains in the presence of an alkali solution.
摘要翻译：一种研磨半导体晶片的方法，包括同时研磨正在研磨的多个半导体晶片的两个表面的方法，所述两个半导体晶片在多个晶片被保持在载体上的状态下，通过在一对上下旋转表面板之间旋转多个半导体晶片而被研磨，多个晶片位于单个圆周的圆周上，其中通过多个晶片的中心的圆的面积与多个晶片之一的面积的比率大于或等于1.33但小于2.0; 多个晶片的转速落在5〜80rpm的范围内; 并且利用固定的磨粒在碱性溶液的存在下用旋转的表面板研磨多个晶片。

5. 发明申请

US20090294910A1 SILICON WAFER 审中-公开
标题翻译：硅胶
公开(公告)号：US20090294910A1
公开(公告)日：2009-12-03
申请号：US12476452
申请日：2009-06-02
申请人： Takeo KATOH , Kazushige TAKAISHI
发明人： Takeo KATOH , Kazushige TAKAISHI
IPC分类号： H01L23/00
CPC分类号： H01L21/02005 , H01L29/0657
摘要： A reinforcement member made with silicon carbide different from silicon is installed on the back face of a silicon wafer, thereby the silicon wafer is increased in Young's modulus and the wafer is less likely to deflect.
摘要翻译：在硅晶片的背面安装由不同于硅的碳化硅制成的加强构件，从而硅晶片的杨氏模量增加，并且晶片不太可能偏转。

6. 发明申请

US20090211167A1 SLURRY FOR WIRE SAW 审中-公开
标题翻译：电浆锯
公开(公告)号：US20090211167A1
公开(公告)日：2009-08-27
申请号：US12388823
申请日：2009-02-19
申请人： Satoshi MATAGAWA , Akira NAKASHIMA , Takahisa NAKASHIMA , Kazushige TAKAISHI
发明人： Satoshi MATAGAWA , Akira NAKASHIMA , Takahisa NAKASHIMA , Kazushige TAKAISHI
IPC分类号： C09G1/02
CPC分类号： C09G1/02
摘要： A wire saw slurry containing, in a dispersing medium, 0.01-1 wt % of a metal film forming substance or a chelating agent that forms a film over copper in the dispersing medium. Entry of copper into a wafer bulk is prevented by the metal film forming substance or the chelating agent capturing the copper leaching out from brass plating of wires.
摘要翻译：在分散介质中含有0.01-1重量％的在分散介质中形成铜的膜的金属成膜物质或螯合剂的线锯浆料。通过金属成膜物质或螯合剂捕获从黄铜镀层中浸出的铜来防止铜进入晶片体积。

7. 发明申请

US20090042390A1 ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME 审中-公开
标题翻译：用于硅晶片表面形状控制的蚀刻和使用其制造硅波的方法
公开(公告)号：US20090042390A1
公开(公告)日：2009-02-12
申请号：US11836493
申请日：2007-08-09
申请人： Sakae Koyata , Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi
发明人： Sakae Koyata , Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi
IPC分类号： H01L21/302 , C09K13/08
CPC分类号： H01L21/30608 , C09K13/02 , C09K13/08 , H01L21/02019
摘要： It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.
摘要翻译：可以减少双面同时抛光工艺或单面抛光工艺的工作量，并且在完成平坦化处理时实现晶片平整度的维持和晶片正面粗糙度的降低。根据本发明的硅晶片的制造方法包括：通过对硅单晶锭进行切片而得到的薄片状硅晶片的正面和背面进行研磨或研磨的平坦化工艺13，将硅晶片浸入的蚀刻工艺用于控制硅晶片表面形状的蚀刻剂，其中含氟表面活性剂在碱性水溶液中均匀混合以蚀刻硅晶片的正面和背面;以及双面同时抛光工艺16，同时抛光前后蚀刻的硅晶片的侧面或者对于每一侧抛光蚀刻后的晶片的正面和背面的单面抛光工艺。

8. 发明申请

US20070298614A1 Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
标题翻译：用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法
公开(公告)号：US20070298614A1
公开(公告)日：2007-12-27
申请号：US11893538
申请日：2007-08-15
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/306
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.
摘要翻译：用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。提供在晶片上的蚀刻流体通过晶片的旋转而扩展。蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸，吸气装置

9. 发明申请

US20070119817A1 Manufacturing method of silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US20070119817A1
公开(公告)日：2007-05-31
申请号：US10562236
申请日：2004-10-28
申请人： Sakae Koyata , Kazushige Takaishi
发明人： Sakae Koyata , Kazushige Takaishi
IPC分类号： C03C15/00 , H01L21/302 , C23F1/00 , B44C1/22
CPC分类号： H01L21/30604 , H01L21/02019
摘要： The manufacturing method of a silicon wafer of the present invention includes an etching process (14) storing acid etching solution and alkali etching solution in plural etching tanks, respectively, and immersing a silicon wafer gone through a lapping process and having degraded superficial layers in the acid etching solution and the alkali etching solution in order so as to remove the degraded superficial layers; and a double surface polishing process (16) to simultaneously polish the front and rear surfaces of the wafer after the etching process; wherein sodium hydroxide aqueous solution of 40 to 60 percent by weight is used in the alkali etching solution of the etching process, and the polishing removal depth A in the wafer front surface is made 5 to 10 μm in the double surface simultaneous polishing process, and the polishing removal depth B in the rear surface is made 2 to 6 μm, and a difference (A-B) between the polishing removal depth A and the polishing removal depth B is made 3 to 4 μm. The manufacturing method of the present invention provides a silicon wafer, in which both sides of the wafer have a highly accurate flatness and small surface roughness, and moreover, which is a single surface mirror-polished wafer with the front and rear surfaces of the wafer identifiable by visual observation, and excellent in flatness when held by a stepper chuck and the like.
摘要翻译：本发明的硅晶片的制造方法包括在多个蚀刻槽中分别存储酸蚀刻溶液和碱蚀刻液的蚀刻工序（14），将通过研磨工序的硅晶片浸渍在上述酸蚀溶液和碱蚀刻溶液，以便除去降解的表面层; 和双面抛光工艺（16），以在蚀刻工艺之后同时抛光晶片的前表面和后表面; 其中在蚀刻工艺的碱蚀刻溶液中使用40〜60重量％的氢氧化钠水溶液，在双面同时研磨工序中，晶片正面的研磨去除深度A为5〜10μm，后表面的抛光去除深度B为2〜6μm，抛光去除深度A和抛光去除深度B之间的差（AB）为3〜4μm。本发明的制造方法提供了一种硅晶片，其中晶片的两侧具有高精度的平坦度和较小的表面粗糙度，此外，其是具有晶片的前表面和后表面的单面镜面抛光晶片通过目视观察可以识别，并且当由步进卡盘等保持时具有优异的平坦度。

10. 发明申请

US20050148181A1 Method for producing a silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US20050148181A1
公开(公告)日：2005-07-07
申请号：US10957026
申请日：2004-10-01
申请人： Sakae Koyata , Kazushige Takaishi , Tohru Taniguchi , Kazuo Fujimaki
发明人： Sakae Koyata , Kazushige Takaishi , Tohru Taniguchi , Kazuo Fujimaki
IPC分类号： H01L21/304 , B24B37/04 , H01L21/302 , H01L21/306 , H01L21/461
CPC分类号： C30B29/06 , B24B37/042 , C30B33/10 , H01L21/02019 , H01L21/30604 , H01L21/30608
摘要： Provided is a method for producing a silicon wafer those surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the chamfered wafer, a mild lapping step for abrading away part of processing distortions on the rear surface of the wafer left after chamfering and lapping, a rear-surface mild polishing step for abrading away part of roughness on the rear surface of the wafer, an etching step for alkali-etching the remains of processing distortions on the front and rear surfaces of the wafer, a mirror-polishing step for mirror-polishing the surface of the etched wafer, and a cleaning step for cleaning the mirror-polished wafer.
摘要翻译：提供一种硅晶片的制造方法，其表面具有精确的平坦度和微小的表面粗糙度，并且能够在前后表面之间进行目视辨别，该方法包括将单晶锭切割成薄盘状的切片工序，用于倒角晶片的倒角步骤，用于使倒角晶片平坦化的研磨步骤，用于在倒角和研磨后留下的晶片背面上的部分加工变形的研磨，温和研磨步骤，后表面温和抛光用于研磨晶片后表面上的粗糙部分的步骤，用于碱蚀刻晶片的前表面和后表面上的加工变形残余物的蚀刻步骤，用于镜面抛光晶片表面的镜面抛光步骤蚀刻晶片，以及用于清洁镜面抛光晶片的清洁步骤。

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