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1. 发明授权

US08066896B2 Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
标题翻译：用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法
公开(公告)号：US08066896B2
公开(公告)日：2011-11-29
申请号：US11893538
申请日：2007-08-15
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： B44C1/22
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.
摘要翻译：用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。提供在晶片上的蚀刻流体通过晶片的旋转而扩展。蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸，吸气装置

2. 发明申请

US20100151597A1 METHOD FOR SMOOTHING WAFER SURFACE AND APPARATUS USED THEREFOR 有权
标题翻译：用于平滑表面的方法及其使用的装置
公开(公告)号：US20100151597A1
公开(公告)日：2010-06-17
申请号：US12161070
申请日：2007-01-17
申请人： Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata , Kazushige Takaishi
发明人： Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata , Kazushige Takaishi
IPC分类号： H01L21/306 , C23F1/08
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.
摘要翻译：公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。在该方法中，根据晶片表面的突起施加流体，从而减少突起。或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。

3. 发明授权

US07226864B2 Method for producing a silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US07226864B2
公开(公告)日：2007-06-05
申请号：US10957030
申请日：2004-10-01
申请人： Sakae Koyata , Kazushige Takaishi , Tohru Taniguchi , Kazuo Fujimaki , Akihiro Kudo , Masashi Norimoto
发明人： Sakae Koyata , Kazushige Takaishi , Tohru Taniguchi , Kazuo Fujimaki , Akihiro Kudo , Masashi Norimoto
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C30B29/06 , B24B37/042 , C30B33/10 , H01L21/02019 , H01L21/30604 , H01L21/30608
摘要： Provided is an improved method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the wafer, an etching step for removing processing distortions on the wafer surfaces, a mirror-polishing step for mirror-polishing the surface of the wafer, and a cleaning step for cleaning the wafer. The etching step further comprises a first acid-etching phase and a second alkali-etching phase, and a rear surface mild polishing step is introduced between the first and second etching phases in order to abrade part of roughness formed on the rear surface of the wafer as a result of the first etching phase.
摘要翻译：提供了一种用于制造表面精确平坦度和微小表面粗糙度的硅晶片的改进方法，并且其允许在视觉上区分前表面和后表面，该方法包括将单晶锭切割成薄盘的切片步骤用于使晶片倒角的研磨步骤，用于使晶片平坦化的研磨步骤，用于去除晶片表面上的加工变形的蚀刻步骤，用于镜面抛光晶片表面的镜面抛光步骤以及清洁清洁晶圆的步骤。蚀刻步骤还包括第一酸腐蚀相和第二碱蚀刻相，并且在第一和第二蚀刻相之间引入后表面温和的抛光步骤，以便研磨形成在晶片的后表面上的部分粗糙度作为第一蚀刻阶段的结果。

4. 发明申请

US20070042567A1 Process for producing silicon wafer 有权
标题翻译：硅晶片生产工艺
公开(公告)号：US20070042567A1
公开(公告)日：2007-02-22
申请号：US11504969
申请日：2006-08-15
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid: nitric acid: phosphoric acid is 0.5 to 40%: 5 to 50%: 5 to 70%, respectively.
摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转，晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

5. 发明申请

US20060252272A1 Method of processing silicon wafer 有权
标题翻译：硅晶片处理方法
公开(公告)号：US20060252272A1
公开(公告)日：2006-11-09
申请号：US10558789
申请日：2004-05-24
申请人： Sakae Koyata , Kazushige Takaishi
发明人： Sakae Koyata , Kazushige Takaishi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02021 , H01L21/02008 , H01L21/02052 , H01L21/30604
摘要： The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafer is subjected to alkaline cleaning to be removed of contaminants resulting from preceding machining; and step 16 in which the wafer is alternately transferred between two groups of etching tanks one of which contain acidic etching solutions and the other alkaline etching solutions, wherein an additional step 12 is introduced between step 11 and step 13 in which a wafer is immersed in an acidic solution containing hydrofluoric acid (HF) and nitric acid (HNO3) at a volume ratio of ⅛ to ½ (HF/HNO3) so that degraded superficial layers occurring on the front and rear surfaces of the wafer as a result of machining can be removed and the edge surface of the wafer can be beveled. The inventive method simplifies the steps involved in the processing of a wafer, and reduces the intervention of alkaline cleaning accompanied with mechanical beveling, thereby reducing the risk of contamination due to metal impurities which may result from alkaline cleaning.
摘要翻译：用于处理硅晶片的本发明的方法是包括步骤11的方法，其中将单晶锭切成薄片状晶片; 步骤13，其中每个晶片的表面被研磨成平面; 步骤14，其中晶片经受碱性清洁以去除由先前加工产生的污染物; 和步骤16，其中晶片交替地在两组蚀刻槽之间交替传输，其中一组蚀刻槽含有酸性蚀刻溶液和另一种碱性蚀刻溶液，其中在步骤11和步骤13之间引入附加步骤12，其中将晶片浸入包含体积比为1/8至1/2（HF / HNO 3 3）的氢氟酸（HF）和硝酸（HNO 3 N 3）的酸性溶液，使得降解的表面可以除去在晶片的前表面和后表面上产生的作为加工结果的层，并且晶片的边缘表面可以被倒角。本发明的方法简化了晶片处理中涉及的步骤，并且减少了伴随机械斜面的碱性清洁的干预，从而降低了由碱性清洗引起的金属杂质污染的风险。

6. 发明申请

US20060194441A1 Method for etching a silicon wafer and method for performing differentiation between the obverse and the reverse of a silicon wafer using the same method 审中-公开
标题翻译：用于蚀刻硅晶片的方法和使用相同方法在硅晶片的正面和反向之间进行微分的方法
公开(公告)号：US20060194441A1
公开(公告)日：2006-08-31
申请号：US11067117
申请日：2005-02-25
申请人： Sakae Koyata , Kazushige Takaishi , Masashi Norimoto
发明人： Sakae Koyata , Kazushige Takaishi , Masashi Norimoto
IPC分类号： H01L21/302 , B44C1/22 , C23F1/00
CPC分类号： H01L21/30608 , H01L21/02019
摘要： The invention is improvement of a silicon wafer etching method of storing an acid etching solution and an alkali etching solution respectively in plural etching tanks, and immersing a silicon wafer having a work-degenerated layer, which has experienced a lapping process and then a cleaning process, in the acid etching solution and the alkali etching solution in order. Its characteristic configuration is in that an alkali etching process is performed after an acid etching process, the etching removal depth for acid etching is made to be equal to or larger than the etching removal depth for alkali etching, and the etching rate of acid etching is made to be 0.0075 μm/sec to 0.05 μm/sec in total of the obverse and the reverse of the silicon wafer.
摘要翻译：本发明是改进在多个蚀刻槽中分别存储酸蚀刻溶液和碱蚀刻溶液的硅晶片蚀刻方法，以及经历了研磨过程然后进行清洗处理的具有工作退化层的硅晶片，在酸蚀刻溶液和碱蚀刻溶液中。其特征在于，在酸蚀刻工序之后进行碱蚀刻处理，将酸蚀刻的蚀刻去除深度设定为等于或大于碱蚀刻的蚀刻去除深度，酸蚀刻的蚀刻速率为相对于硅晶片的正面和反向总计为0.0075mum / sec至0.05mum / sec。

7. 发明申请

US20090042390A1 ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME 审中-公开
标题翻译：用于硅晶片表面形状控制的蚀刻和使用其制造硅波的方法
公开(公告)号：US20090042390A1
公开(公告)日：2009-02-12
申请号：US11836493
申请日：2007-08-09
申请人： Sakae Koyata , Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi
发明人： Sakae Koyata , Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi
IPC分类号： H01L21/302 , C09K13/08
CPC分类号： H01L21/30608 , C09K13/02 , C09K13/08 , H01L21/02019
摘要： It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.
摘要翻译：可以减少双面同时抛光工艺或单面抛光工艺的工作量，并且在完成平坦化处理时实现晶片平整度的维持和晶片正面粗糙度的降低。根据本发明的硅晶片的制造方法包括：通过对硅单晶锭进行切片而得到的薄片状硅晶片的正面和背面进行研磨或研磨的平坦化工艺13，将硅晶片浸入的蚀刻工艺用于控制硅晶片表面形状的蚀刻剂，其中含氟表面活性剂在碱性水溶液中均匀混合以蚀刻硅晶片的正面和背面;以及双面同时抛光工艺16，同时抛光前后蚀刻的硅晶片的侧面或者对于每一侧抛光蚀刻后的晶片的正面和背面的单面抛光工艺。

8. 发明申请

US20070298614A1 Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
标题翻译：用于通过单晶片工艺蚀刻晶片的装置和用于蚀刻晶片的单晶片型方法
公开(公告)号：US20070298614A1
公开(公告)日：2007-12-27
申请号：US11893538
申请日：2007-08-15
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/306
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.
摘要翻译：用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。提供在晶片上的蚀刻流体通过晶片的旋转而扩展。蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸，吸气装置

9. 发明申请

US20070119817A1 Manufacturing method of silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US20070119817A1
公开(公告)日：2007-05-31
申请号：US10562236
申请日：2004-10-28
申请人： Sakae Koyata , Kazushige Takaishi
发明人： Sakae Koyata , Kazushige Takaishi
IPC分类号： C03C15/00 , H01L21/302 , C23F1/00 , B44C1/22
CPC分类号： H01L21/30604 , H01L21/02019
摘要： The manufacturing method of a silicon wafer of the present invention includes an etching process (14) storing acid etching solution and alkali etching solution in plural etching tanks, respectively, and immersing a silicon wafer gone through a lapping process and having degraded superficial layers in the acid etching solution and the alkali etching solution in order so as to remove the degraded superficial layers; and a double surface polishing process (16) to simultaneously polish the front and rear surfaces of the wafer after the etching process; wherein sodium hydroxide aqueous solution of 40 to 60 percent by weight is used in the alkali etching solution of the etching process, and the polishing removal depth A in the wafer front surface is made 5 to 10 μm in the double surface simultaneous polishing process, and the polishing removal depth B in the rear surface is made 2 to 6 μm, and a difference (A-B) between the polishing removal depth A and the polishing removal depth B is made 3 to 4 μm. The manufacturing method of the present invention provides a silicon wafer, in which both sides of the wafer have a highly accurate flatness and small surface roughness, and moreover, which is a single surface mirror-polished wafer with the front and rear surfaces of the wafer identifiable by visual observation, and excellent in flatness when held by a stepper chuck and the like.
摘要翻译：本发明的硅晶片的制造方法包括在多个蚀刻槽中分别存储酸蚀刻溶液和碱蚀刻液的蚀刻工序（14），将通过研磨工序的硅晶片浸渍在上述酸蚀溶液和碱蚀刻溶液，以便除去降解的表面层; 和双面抛光工艺（16），以在蚀刻工艺之后同时抛光晶片的前表面和后表面; 其中在蚀刻工艺的碱蚀刻溶液中使用40〜60重量％的氢氧化钠水溶液，在双面同时研磨工序中，晶片正面的研磨去除深度A为5〜10μm，后表面的抛光去除深度B为2〜6μm，抛光去除深度A和抛光去除深度B之间的差（AB）为3〜4μm。本发明的制造方法提供了一种硅晶片，其中晶片的两侧具有高精度的平坦度和较小的表面粗糙度，此外，其是具有晶片的前表面和后表面的单面镜面抛光晶片通过目视观察可以识别，并且当由步进卡盘等保持时具有优异的平坦度。

10. 发明申请

US20060169667A1 Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same 有权
标题翻译：用于控制硅晶片表面形状的蚀刻液和使用其制造硅晶片的方法
公开(公告)号：US20060169667A1
公开(公告)日：2006-08-03
申请号：US11345009
申请日：2006-01-31
申请人： Sakae Koyata , Yuichi Kakizono , Tomohiro Hashii , Katsuhiko Murayama
发明人： Sakae Koyata , Yuichi Kakizono , Tomohiro Hashii , Katsuhiko Murayama
IPC分类号： B44C1/22 , H01L21/461 , C09K13/00 , C23F1/00
CPC分类号： H01L21/02008 , C30B33/10
摘要： A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.
摘要翻译：一种硅晶片的制造方法，其特征在于，包括：通过对硅单晶锭进行切片而得到的薄盘状硅晶片的上下表面进行抛光或研磨的平坦化工序13，将硅晶片浸入蚀刻液中的蚀刻工序其中二氧化硅粉末均匀地分散在碱性水溶液中，从而蚀刻硅晶片的上侧和下侧表面，以及用于同时抛光被蚀刻的硅晶片的上侧和下侧表面的双面同时抛光工艺16，按照此顺序一次一个地抛光蚀刻的硅晶片的上侧和下侧表面的侧面抛光工艺。

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