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1. 发明申请

US20090304490A1 METHOD FOR HOLDING SILICON WAFER 审中-公开
标题翻译：保持硅波的方法
公开(公告)号：US20090304490A1
公开(公告)日：2009-12-10
申请号：US12135805
申请日：2008-06-09
申请人： Takayuki Kihara , Masataka Hourai , Yuki Murata , Kazushige Takaishi , Seiji Sugimoto , Tadashi Kanda
发明人： Takayuki Kihara , Masataka Hourai , Yuki Murata , Kazushige Takaishi , Seiji Sugimoto , Tadashi Kanda
IPC分类号： H01L21/67
CPC分类号： H01L21/6732
摘要： The present invention is directed to provide a method for holding a silicon wafer, which can reduce contact scratches in contact with support members when holding a back surface of the silicon wafer, as well as prevent the wafer from bending when holding the back surface of the silicon wafer. The back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from a center thereof. The silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. The silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member.
摘要翻译：本发明的目的在于提供一种保持硅晶片的方法，当保持硅晶片的背面时，可以减少与支撑部件接触的接触划痕，并且当保持硅晶片的背面时，防止晶片弯曲硅晶片。直径为300毫米，厚度为700微米至1000微米的硅晶片的背面保持与支撑构件或抽吸构件接触，特别是保持在硅晶片的半径为0.50至 0.80从其中心。硅晶片保持在晶片平面内的最大位移量为300微米以下的状态。在保持硅晶片的背面与支撑构件或抽吸构件接触的所有过程中，硅晶片背面保持在保持区域内。

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