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    • 3. 发明申请
    • Manufacturing method of silicon wafer
    • 硅晶片的制造方法
    • US20070119817A1
    • 2007-05-31
    • US10562236
    • 2004-10-28
    • Sakae KoyataKazushige Takaishi
    • Sakae KoyataKazushige Takaishi
    • C03C15/00H01L21/302C23F1/00B44C1/22
    • H01L21/30604H01L21/02019
    • The manufacturing method of a silicon wafer of the present invention includes an etching process (14) storing acid etching solution and alkali etching solution in plural etching tanks, respectively, and immersing a silicon wafer gone through a lapping process and having degraded superficial layers in the acid etching solution and the alkali etching solution in order so as to remove the degraded superficial layers; and a double surface polishing process (16) to simultaneously polish the front and rear surfaces of the wafer after the etching process; wherein sodium hydroxide aqueous solution of 40 to 60 percent by weight is used in the alkali etching solution of the etching process, and the polishing removal depth A in the wafer front surface is made 5 to 10 μm in the double surface simultaneous polishing process, and the polishing removal depth B in the rear surface is made 2 to 6 μm, and a difference (A-B) between the polishing removal depth A and the polishing removal depth B is made 3 to 4 μm. The manufacturing method of the present invention provides a silicon wafer, in which both sides of the wafer have a highly accurate flatness and small surface roughness, and moreover, which is a single surface mirror-polished wafer with the front and rear surfaces of the wafer identifiable by visual observation, and excellent in flatness when held by a stepper chuck and the like.
    • 本发明的硅晶片的制造方法包括在多个蚀刻槽中分别存储酸蚀刻溶液和碱蚀刻液的蚀刻工序(14),将通过研磨工序的硅晶片浸渍在上述 酸蚀溶液和碱蚀刻溶液,以便除去降解的表面层; 和双面抛光工艺(16),以在蚀刻工艺之后同时抛光晶片的前表面和后表面; 其中在蚀刻工艺的碱蚀刻溶液中使用40〜60重量%的氢氧化钠水溶液,在双面同时研磨工序中,晶片正面的研磨去除深度A为5〜10μm, 后表面的抛光去除深度B为2〜6μm,抛光去除深度A和抛光去除深度B之间的差(AB)为3〜4μm。 本发明的制造方法提供了一种硅晶片,其中晶片的两侧具有高精度的平坦度和较小的表面粗糙度,此外,其是具有晶片的前表面和后表面的单面镜面抛光晶片 通过目视观察可以识别,并且当由步进卡盘等保持时具有优异的平坦度。
    • 10. 发明申请
    • Method of processing silicon wafer
    • 硅晶片处理方法
    • US20060252272A1
    • 2006-11-09
    • US10558789
    • 2004-05-24
    • Sakae KoyataKazushige Takaishi
    • Sakae KoyataKazushige Takaishi
    • H01L21/302H01L21/461
    • H01L21/02021H01L21/02008H01L21/02052H01L21/30604
    • The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafer is subjected to alkaline cleaning to be removed of contaminants resulting from preceding machining; and step 16 in which the wafer is alternately transferred between two groups of etching tanks one of which contain acidic etching solutions and the other alkaline etching solutions, wherein an additional step 12 is introduced between step 11 and step 13 in which a wafer is immersed in an acidic solution containing hydrofluoric acid (HF) and nitric acid (HNO3) at a volume ratio of ⅛ to ½ (HF/HNO3) so that degraded superficial layers occurring on the front and rear surfaces of the wafer as a result of machining can be removed and the edge surface of the wafer can be beveled. The inventive method simplifies the steps involved in the processing of a wafer, and reduces the intervention of alkaline cleaning accompanied with mechanical beveling, thereby reducing the risk of contamination due to metal impurities which may result from alkaline cleaning.
    • 用于处理硅晶片的本发明的方法是包括步骤11的方法,其中将单晶锭切成薄片状晶片; 步骤13,其中每个晶片的表面被研磨成平面; 步骤14,其中晶片经受碱性清洁以去除由先前加工产生的污染物; 和步骤16,其中晶片交替地在两组蚀刻槽之间交替传输,其中一组蚀刻槽含有酸性蚀刻溶液和另一种碱性蚀刻溶液,其中在步骤11和步骤13之间引入附加步骤12,其中将晶片浸入 包含体积比为1/8至1/2(HF / HNO 3 3)的氢氟酸(HF)和硝酸(HNO 3 N 3)的酸性溶液,使得降解的表面 可以除去在晶片的前表面和后表面上产生的作为加工结果的层,并且晶片的边缘表​​面可以被倒角。 本发明的方法简化了晶片处理中涉及的步骤,并且减少了伴随机械斜面的碱性清洁的干预,从而降低了由碱性清洗引起的金属杂质污染的风险。