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1. 发明授权

US08067757B2 Extreme ultraviolet light source apparatus and method of adjusting the same 有权
标题翻译：极紫外光源装置及其调整方法
公开(公告)号：US08067757B2
公开(公告)日：2011-11-29
申请号：US12696759
申请日：2010-01-29
申请人： Kazuo Tawarayama
发明人： Kazuo Tawarayama
IPC分类号： G01N21/33 , G01N21/00 , H05H1/24
CPC分类号： G03F7/70033
摘要： An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.
摘要翻译：一种极紫外光源装置包括：主体，其包括供给极紫外线辐射种子的供给部和被配置为发射极紫外线的发射部;激励部，设置在主体中，并且被配置为通过激励产生等离子体所述极紫外辐射种子，设置在所述主体中并且被配置为在所述发射部分处会聚从所述等离子体辐射的极紫外线的聚光单元，设置在所述激发单元和所述光聚焦单元之间的陷阱，第一定位连接到所述陷阱并被配置为调整所述陷阱的位置和角度中的至少一个的机构，以及测量单元，其被配置为基于从所述发射器发射的所述极紫外线来测量所述等离子体的远场分布图像从而操作第一定位机构。

2. 发明申请

US20090095711A1 MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：微生物装置和装置制造方法
公开(公告)号：US20090095711A1
公开(公告)日：2009-04-16
申请号：US12237806
申请日：2008-09-25
申请人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
发明人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
IPC分类号： B44C1/22 , B29C43/02
CPC分类号： B29C43/021 , B29C33/303 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/525 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7003 , G03F9/7042 , G03F9/7088
摘要： A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.
摘要翻译：一种用于将包括图案的原稿板压在基板上以将图案转印到基板上的微加工装置包括：第一测量单元，用于测量基板和基板上方的板之间的相对位置偏移;位置校正单元，用于校正相对位置在基板和板之间，基于由第一测量单元测量的相对位置位移，将图案转印到基板的第一预定位置上;按压单元，用于将基板上方的基板向下压在基板上，在通过位置校正单元校正基板和板之间的相对位置偏移的状态下，在基板上转印图案;以及第二测量单元，用于测量在基板上传送的图案与先前形成的图案之间的相对位置关系在基板上。

3. 发明授权

US08023759B2 Focus monitoring method 有权
标题翻译：聚焦监测方法
公开(公告)号：US08023759B2
公开(公告)日：2011-09-20
申请号：US11947239
申请日：2007-11-29
申请人： Kazuo Tawarayama
发明人： Kazuo Tawarayama
IPC分类号： G06K9/40
CPC分类号： G03F7/70641
摘要： According to an aspect of the present invention, there is provided a method of monitoring a focus position on a surface of a wafer for an exposure apparatus which transfers by exposure a pattern formed on a mask onto the wafer, including tilting at least one of the mask and an exposure area on the wafer and performing exposure while the mask and the exposure area have a relative angle, to form two spurious resolution images of the pattern of the mask in the exposure area; measuring positions of the two spurious resolution images formed in the exposure area and detecting an optimal focus position of the exposure apparatus on the basis of a middle point between the measured positions of the two spurious resolution images.
摘要翻译：根据本发明的一个方面，提供了一种监视用于曝光装置的晶片表面上的聚焦位置的方法，该曝光装置通过曝光将形成在掩模上的图案转印到晶片上，包括使至少一个掩模和曝光区域，并且在掩模和曝光区域具有相对角度的同时执行曝光，以在曝光区域中形成掩模图案的两个伪分辨率图像; 测量形成在曝光区域中的两个伪分辨率图像的位置，并且基于两个伪分辨率图像的测量位置之间的中间点来检测曝光装置的最佳聚焦位置。

4. 发明申请

US20090141378A1 OPTICAL ELEMENT AND OPTICAL APPARATUS 审中-公开
标题翻译：光学元件和光学设备
公开(公告)号：US20090141378A1
公开(公告)日：2009-06-04
申请号：US12332628
申请日：2008-12-11
申请人： Kazuo TAWARAYAMA , Tatsuhiko Higashiki , Iwao Higashikawa
发明人： Kazuo TAWARAYAMA , Tatsuhiko Higashiki , Iwao Higashikawa
IPC分类号： G02B7/185
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G02B17/0663 , G03F1/24 , G03F1/38
摘要： An optical element includes a substrate, a magnetostrictive film arranged on the substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflects light. An optical apparatus includes a stage including a holder provided with plural holes arranged in a carrying surface thereof for carrying an optical element provided with a magnetostrictive film arranged on a substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflecting light, plural magnetic field generation parts embedded in the plural holes, and a control mechanism for controlling the magnetic field generated by each of the plural magnetic field generation parts, and controlling the film thickness of the magnetostrictive film.
摘要翻译：光学元件包括基板，设置在基板上的磁致伸缩膜，磁致伸缩膜的膜厚度根据磁场的强度而变化，以及布置在磁致伸缩膜上并反射光的反射膜。一种光学装置，包括：台架，其具有设置有多个孔的保持器，所述保持器设置在其承载表面上，用于承载设置有设置在基板上的磁致伸缩膜的光学元件，所述磁致伸缩膜的膜厚度根据磁场强度而变化以及布置在磁致伸缩膜上并反射光的反射膜，嵌入在多个孔中的多个磁场产生部分和用于控制由多个磁场产生部分中的每一个产生的磁场的控制机构，并且控制膜厚度的磁致伸缩膜。

5. 发明申请

US20080293169A1 LITHOGRAPHY EVALUATING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PROGRAM MEDIUM 审中-公开
标题翻译：算术评估方法，半导体器件制造方法和程序介质
公开(公告)号：US20080293169A1
公开(公告)日：2008-11-27
申请号：US12167616
申请日：2008-07-03
申请人： Kazuo TAWARAYAMA , Shunko Magoshi
发明人： Kazuo TAWARAYAMA , Shunko Magoshi
IPC分类号： H01L21/66
CPC分类号： G03F7/70616
摘要： A lithography evaluating method comprises preparing a substrate, the substrate including a semiconductor substrate and a wiring structure including at least one wiring layer formed on the semiconductor substrate, partitioning the substrate into a plurality of regions to be evaluated, and obtaining a value of property relating to the wiring structure previously, and evaluating proximity effect on each of the plurality of regions to be evaluated based on the value of the property relating to the wiring structure.
摘要翻译：光刻评估方法包括准备衬底，所述衬底包括半导体衬底和布线结构，所述布线结构包括形成在所述半导体衬底上的至少一个布线层，将所述衬底划分成多个要评估的区域，并获得相关的属性值并且基于与布线结构相关的属性的值来评估要评估的多个区域中的每一个上的接近效应。

6. 发明申请

US20080137981A1 FOCUS MONITORING METHOD 有权
标题翻译：聚焦监测方法
公开(公告)号：US20080137981A1
公开(公告)日：2008-06-12
申请号：US11947239
申请日：2007-11-29
申请人： Kazuo TAWARAYAMA
发明人： Kazuo TAWARAYAMA
IPC分类号： G06K9/40
CPC分类号： G03F7/70641
摘要： According to an aspect of the present invention, there is provided a method of monitoring a focus position on a surface of a wafer for an exposure apparatus which transfers by exposure a pattern formed on a mask onto the wafer, including tilting at least one of the mask and an exposure area on the wafer and performing exposure while the mask and the exposure area have a relative angle, to form two spurious resolution images of the pattern of the mask in the exposure area; measuring positions of the two spurious resolution images formed in the exposure area and detecting an optimal focus position of the exposure apparatus on the basis of a middle point between the measured positions of the two spurious resolution images.
摘要翻译：根据本发明的一个方面，提供了一种监视用于曝光装置的晶片表面上的聚焦位置的方法，该曝光装置通过曝光将形成在掩模上的图案转印到晶片上，包括使至少一个掩模和曝光区域，并且在掩模和曝光区域具有相对角度的同时执行曝光，以在曝光区域中形成掩模图案的两个伪分辨率图像; 测量在曝光区域中形成的两个伪分辨率图像的位置，并且基于两个伪分辨率图像的测量位置之间的中点检测曝光装置的最佳聚焦位置。

7. 发明申请

US20140061969A1 PATTERNING METHOD AND TEMPLATE 审中-公开
标题翻译：绘图方法和模板
公开(公告)号：US20140061969A1
公开(公告)日：2014-03-06
申请号：US13721631
申请日：2012-12-20
申请人： Yosuke OKAMOTO , Kazuo Tawarayama , Nobuhiro Komine
发明人： Yosuke OKAMOTO , Kazuo Tawarayama , Nobuhiro Komine
IPC分类号： B29C59/00
CPC分类号： B29C59/002 , G03F7/0002
摘要： According to one embodiment, a patterning method includes releasing the template from the cured imprint resist, aligning an alignment mark formed in the non-imprint portion of the template with the transfer pattern of the alignment pattern without causing the alignment mark to contact the imprint resist, and causing the main pattern and the alignment pattern of the template to contact an imprint resist that is supplied to a shot region adjacent to the cured imprint resist and uncured. The method includes curing the imprint resist of the adjacent shot region in the state of the template being in contact to form the transfer pattern of the main pattern and the transfer pattern of the alignment pattern in the imprint resist.
摘要翻译：根据一个实施例，图案化方法包括从固化的压印抗蚀剂释放模板，将形成在模板的非印制部分中的对准标记与对准图案的转印图案对准，而不会使对准标记接触印记抗蚀剂并且使得模板的主图案和对准图案与供给到与固化的印记抗蚀剂相邻的未被照射的照射区域的印刷抗蚀剂接触。该方法包括在模板接触状态下固化相邻拍摄区域的抗印刷抗蚀剂，以形成印模抗蚀剂中主图案的转印图案和对准图案的转印图案。

8. 发明申请

US20110285975A1 METHOD OF MANAGING EUV EXPOSURE MASK AND EXPOSURE METHOD 审中-公开
标题翻译： EUV暴露面罩和接触方法的管理方法
公开(公告)号：US20110285975A1
公开(公告)日：2011-11-24
申请号：US13051864
申请日：2011-03-18
申请人： Kazuo TAWARAYAMA
发明人： Kazuo TAWARAYAMA
IPC分类号： G03B27/52
CPC分类号： G03B27/52 , G03B27/53 , G03F1/24 , G03F1/44 , G03F1/82 , G03F7/70925
摘要： According to one embodiment, there is provided a method of managing an EUV exposure mask to manage a cleaning period of the EUV exposure mask set in an exposure apparatus, including obtaining mark profile signals corresponding to two different directions of an alignment mark provided on the mask by irradiating the mark with EUV light and detecting light reflected by the mask, measuring dimensions of the mark in the two different directions from the obtained mark profile signals, calculating a difference between the measured dimensions in the two different directions, and determining the cleaning period of the mask based on the calculated difference.
摘要翻译：根据一个实施例，提供了一种管理EUV曝光掩模以管理在曝光设备中设置的EUV曝光掩模的清洁周期的方法，包括获得对应于设置在掩模上的对准标记的两个不同方向的标记轮廓信号通过用EUV光照射标记并检测由掩模反射的光，从所获得的标记轮廓信号测量两个不同方向上的标记的尺寸，计算两个不同方向上的测量尺寸之间的差，并且确定清洁周期基于计算出的差异。

9. 发明授权

US07985958B2 Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program 有权
标题翻译：电子束描绘装置，偏转放大器，偏转控制装置，电子束描绘法，半导体装置的制造方法以及电子束绘制程序
公开(公告)号：US07985958B2
公开(公告)日：2011-07-26
申请号：US11268603
申请日：2005-11-08
申请人： Tetsuro Nakasugi , Kazuo Tawarayama , Hiroyuki Mizuno , Takumi Ota , Noriaki Sasaki , Tatsuhiko Higashiki , Takeshi Koshiba , Shunko Magoshi
发明人： Tetsuro Nakasugi , Kazuo Tawarayama , Hiroyuki Mizuno , Takumi Ota , Noriaki Sasaki , Tatsuhiko Higashiki , Takeshi Koshiba , Shunko Magoshi
IPC分类号： H01J37/153
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/15 , H01J2237/30433
摘要： According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.
摘要翻译：根据本发明的一个方面，提供了一种电子束描绘装置，其包括偏转放大器和偏转单元的至少一个级，在绘制时存储镜头信息的第一存储部分，指示拍摄信息和偏转放大器的输出电压之间的关系的校正表以及基于存储在第二存储部中的校正表来调整偏转放大器的输出的调节部和存储在第一存储部部分。

10. 发明申请

US20100193712A1 EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS AND METHOD OF ADJUSTING THE SAME 有权
标题翻译：极光超光源光源装置及其调整方法
公开(公告)号：US20100193712A1
公开(公告)日：2010-08-05
申请号：US12696759
申请日：2010-01-29
申请人： Kazuo TAWARAYAMA
发明人： Kazuo TAWARAYAMA
IPC分类号： G21K5/02
CPC分类号： G03F7/70033
摘要： An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.
摘要翻译：一种极紫外光源装置包括：主体，其包括供给极紫外线辐射种子的供给部和被配置为发射极紫外线的发射部;激励部，设置在主体中，并且被配置为通过激励产生等离子体所述极紫外辐射种子，设置在所述主体中并且被配置为在所述发射部分处会聚从所述等离子体辐射的极紫外线的聚光单元，设置在所述激发单元和所述光聚焦单元之间的陷阱，第一定位连接到所述陷阱并被配置为调整所述陷阱的位置和角度中的至少一个的机构，以及测量单元，其被配置为基于从所述发射器发射的所述极紫外线来测量所述等离子体的远场分布图像从而操作第一定位机构。

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