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1. 发明申请

US20140061969A1 PATTERNING METHOD AND TEMPLATE 审中-公开
标题翻译：绘图方法和模板
公开(公告)号：US20140061969A1
公开(公告)日：2014-03-06
申请号：US13721631
申请日：2012-12-20
申请人： Yosuke OKAMOTO , Kazuo Tawarayama , Nobuhiro Komine
发明人： Yosuke OKAMOTO , Kazuo Tawarayama , Nobuhiro Komine
IPC分类号： B29C59/00
CPC分类号： B29C59/002 , G03F7/0002
摘要： According to one embodiment, a patterning method includes releasing the template from the cured imprint resist, aligning an alignment mark formed in the non-imprint portion of the template with the transfer pattern of the alignment pattern without causing the alignment mark to contact the imprint resist, and causing the main pattern and the alignment pattern of the template to contact an imprint resist that is supplied to a shot region adjacent to the cured imprint resist and uncured. The method includes curing the imprint resist of the adjacent shot region in the state of the template being in contact to form the transfer pattern of the main pattern and the transfer pattern of the alignment pattern in the imprint resist.
摘要翻译：根据一个实施例，图案化方法包括从固化的压印抗蚀剂释放模板，将形成在模板的非印制部分中的对准标记与对准图案的转印图案对准，而不会使对准标记接触印记抗蚀剂并且使得模板的主图案和对准图案与供给到与固化的印记抗蚀剂相邻的未被照射的照射区域的印刷抗蚀剂接触。该方法包括在模板接触状态下固化相邻拍摄区域的抗印刷抗蚀剂，以形成印模抗蚀剂中主图案的转印图案和对准图案的转印图案。

2. 发明授权

US07092068B2 Reticle, exposure monitoring method, exposure method and manufacturing method for semiconductor device 失效
标题翻译：掩模版，曝光监测方法，曝光方法和半导体器件的制造方法
公开(公告)号：US07092068B2
公开(公告)日：2006-08-15
申请号：US10721903
申请日：2003-11-26
申请人： Nobuhiro Komine
发明人： Nobuhiro Komine
IPC分类号： G03B27/42
CPC分类号： G03F7/70625 , G03F1/42 , G03F1/50 , G03F7/70466
摘要： A reticle includes a first mask portion including a first opaque portion, first and second exposure monitor patterns provided within first and second window portions in the first opaque portion, increasing transmittances in a first direction and a direction reverse to the first direction, respectively; and a second mask potion including a second opaque portion, third and fourth exposure monitor patterns provided within third and fourth window portions in the second opaque portion in positions corresponding to the first opaque portion upon alignment with the first mask portion, increasing transmittances in the first direction and the reverse direction, respectively.
摘要翻译：掩模版包括第一掩模部分，其包括第一不透明部分，第一和第二曝光监视器图案，其设置在第一不透明部分的第一和第二窗口部分内，分别在与第一方向相反的第一方向和方向上增加透射率; 以及包括第二不透明部分，第三和第四曝光监视器图案的第二掩模部分，在与第一掩模部分对准时在第二不透明部分中的第三和第四窗口部分内的位置对应于第一不透明部分的位置，增加第一透明度方向和反方向。

3. 发明申请

US20050170262A1 Exposure processing system, exposure processing method and method for manufacturing a semiconductor device 失效
标题翻译：曝光处理系统，曝光处理方法以及半导体装置的制造方法
公开(公告)号：US20050170262A1
公开(公告)日：2005-08-04
申请号：US11024322
申请日：2004-12-29
申请人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makoto Ikeda
发明人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makoto Ikeda
IPC分类号： G03F7/30 , G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00 , G03F7/20 , G03F9/00 , G03G15/08 , G21K5/00 , H01L21/00 , H01L21/027
CPC分类号： H01L21/67253
摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.
摘要翻译：曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元，显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元用于处理对象上的晶圆。

4. 发明授权

US06866976B2 Monitoring method, exposure method, a manufacturing method for a semiconductor device, including an etching method and exposure processing unit 失效
标题翻译：监测方法，曝光方法，包括蚀刻方法和曝光处理单元的半导体器件的制造方法
公开(公告)号：US06866976B2
公开(公告)日：2005-03-15
申请号：US10394047
申请日：2003-03-24
申请人： Masafumi Asano , Nobuhiro Komine , Soichi Inoue
发明人： Masafumi Asano , Nobuhiro Komine , Soichi Inoue
IPC分类号： G01B11/02 , G03F7/20 , G03F7/207 , G03F7/22 , G03F9/00 , H01L21/02 , H01L21/027 , H01L21/3065 , H01L21/66
CPC分类号： G03F7/70625 , G03F7/70633
摘要： A monitoring method, includes: delineating a monitor resist pattern on an underlying film, the monitor resist pattern having a tilted sidewall slanted to a surface of the underlying film at least at one edge of the monitor resist pattern; measuring a width of the monitor resist pattern in an orthogonal direction to a cross line of the tilted sidewall intersecting with the underlying film; delineating a monitor underlying film pattern by selectively etching the underlying film using the monitor resist pattern as a mask; measuring a width of the monitor underlying film pattern in the orthogonal direction; and obtaining a shift width in the monitor underlying film pattern from a difference between the width of the monitor resist pattern and the width of the monitor underlying film pattern.
摘要翻译：一种监视方法，包括：在底层胶片上描绘监视器抗蚀剂图案，所述监视器抗蚀图案至少在所述监视器抗蚀图案的一个边缘处具有倾斜的侧壁，所述倾斜侧壁倾斜到所述底层膜的表面; 测量所述监视器抗蚀剂图案的宽度与所述倾斜侧壁的交叉线垂直的方向与所述底层膜相交; 通过使用监视器抗蚀剂图案作为掩模来选择性地蚀刻底层膜来描绘基底膜图案的监视器; 在正交方向上测量监视器底层胶片图案的宽度; 并根据监视器抗蚀剂图案的宽度与监视器底层胶片图案的宽度之间的差异获得监视器底层胶片图案中的移位宽度。

5. 发明授权

US08928871B2 Reflective mask 有权
标题翻译：反光面膜
公开(公告)号：US08928871B2
公开(公告)日：2015-01-06
申请号：US13597721
申请日：2012-08-29
申请人： Masaru Suzuki , Nobuhiro Komine
发明人： Masaru Suzuki , Nobuhiro Komine
IPC分类号： G03B27/54 , G02B5/08 , G01J1/04 , G03F7/20
CPC分类号： G02B5/08 , G03F7/70591 , G03F7/7085 , G03F7/70941
摘要： According to a flare measuring method in an embodiment, a reflective mask, in which one reflective coordinate in a slit direction in a mask surface is determined when one scanning coordinate is determined, is placed on a scanner that includes a reflective projection optical system. Moreover, a light intensity of the exposure light is measured by performing a scanning exposure on an illuminance sensor moved to a predetermined position in the slit direction in a slit imaging plane. Then, an amount of flare at an intra-slit position corresponding to a position of the illuminance sensor in the slit direction is calculated by using a light intensity of exposure light received from an intra-slit position that does not correspond to the position of the illuminance sensor in the slit direction in the exposure light.
摘要翻译：根据实施方式的闪光测量方法，在包括反射投影光学系统的扫描仪上放置反射掩模，其中在确定了一个扫描坐标时确定掩模表面中的狭缝方向上的一个反射坐标。此外，通过对在狭缝成像平面中移动到狭缝方向上的预定位置的照度传感器进行扫描曝光来测量曝光光的光强度。然后，通过使用从与狭缝方向的位置不对应的狭缝内位置接收的曝光光的光强度来计算在狭缝方向上对应于照度传感器的位置的狭缝内位置处的光束量照度传感器在曝光灯的狭缝方向。

6. 发明授权

US07906258B2 Photomask, photomask superimposition correcting method, and manufacturing method of semiconductor device 有权
标题翻译：光掩模，光掩模叠加校正方法和半导体器件的制造方法
公开(公告)号：US07906258B2
公开(公告)日：2011-03-15
申请号：US12047516
申请日：2008-03-13
申请人： Nobuhiro Komine , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
发明人： Nobuhiro Komine , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
IPC分类号： G03F1/00 , G03C5/00 , H01L21/00
CPC分类号： G03F9/7076 , G03F1/36 , G03F1/42 , G03F7/70633
摘要： In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.
摘要翻译：在其中在透光基底上形成器件图案，对准标记和叠加检查标记的光掩模中，每个对准标记和叠加检查标记都包括主标记部分和第一和第二辅助图案部分。主标记部分由空间图案和线条图案之一构成，该图形具有在半导体晶片上形成的感光膜上被分辨的线宽，并且第一和第二辅助图案部分中的每一个包括辅助图案由空间图案的重复图案和线图案的重复图案之一构成，重复图案具有在感光膜上不被分辨的线宽。重复图案的间距等于设备图案的最小间距。

7. 发明授权

US07630052B2 Exposure processing system, exposure processing method and method for manufacturing a semiconductor device 失效
标题翻译：曝光处理系统，曝光处理方法以及半导体装置的制造方法
公开(公告)号：US07630052B2
公开(公告)日：2009-12-08
申请号：US11024322
申请日：2004-12-29
申请人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
发明人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
IPC分类号： G03B27/32 , G03B27/54 , G03D5/00 , G03C5/00 , H01L21/00
CPC分类号： H01L21/67253
摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.
摘要翻译：曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元，显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元用于处理对象上的晶圆。

8. 发明授权

US08343692B2 Exposure apparatus inspection mask and exposure apparatus inspection method 有权
标题翻译：曝光装置检查面罩和曝光装置检查方法
公开(公告)号：US08343692B2
公开(公告)日：2013-01-01
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro Komine , Kazuya Fukuhara
发明人： Nobuhiro Komine , Kazuya Fukuhara
IPC分类号： G03F1/38
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

9. 发明授权

US06872508B2 Exposure method and method of manufacturing semiconductor device 失效
标题翻译：半导体器件的制造方法及制造方法
公开(公告)号：US06872508B2
公开(公告)日：2005-03-29
申请号：US10180004
申请日：2002-06-26
申请人： Nobuhiro Komine , Keita Asanuma , Tatsuhiko Higashiki
发明人： Nobuhiro Komine , Keita Asanuma , Tatsuhiko Higashiki
IPC分类号： G02B5/18 , G03F1/36 , G03F1/70 , G03F7/20 , H01L21/027 , H01L21/301 , G03F9/00
CPC分类号： G03F7/70433
摘要： Disclosed is an exposure method comprising preparing an exposure apparatus including an illumination system and a projection lens, setting, in the exposure apparatus, a photomask having a mask pattern including a plurality of unit circuit patterns arranged like a checkered flag pattern and a plurality of unit auxiliary patterns arranged between the unit circuit patterns, and projecting the mask pattern onto a substrate through the projection lens by irradiating the photomask with light from the illumination system, wherein the unit circuit patterns and the unit auxiliary patterns generate a plurality of diffraction light spots on a pupil plane of the projection lens, and the four diffraction light spots having higher light intensities than the remaining diffraction light spots are distributed on the pupil plane in a cycle of 90°.
摘要翻译：公开了一种曝光方法，包括准备包括照明系统和投影透镜的曝光装置，在曝光装置中设置具有掩模图案的光掩模，所述掩模图案包括布置成格子状图案的多个单位电路图案和多个单元辅助图案，布置在单元电路图案之间，并且通过用来自照明系统的光照射光掩模，通过投影透镜将掩模图案投影到基板上，其中单元电路图案和单元辅助图案在投影透镜的光瞳面，并且具有比剩余的衍射光斑更高的光强度的四个衍射光点以90°的周期分布在光瞳面上。

10. 发明授权

US07164960B2 Apparatus for correcting a plurality of exposure tools, method for correcting a plurality of exposure tools, and method for manufacturing semiconductor device 失效
标题翻译：用于校正多个曝光工具的装置，用于校正多个曝光工具的方法，以及用于制造半导体器件的方法
公开(公告)号：US07164960B2
公开(公告)日：2007-01-16
申请号：US10965162
申请日：2004-10-15
申请人： Nobuhiro Komine , Shigeki Nojima , Keita Asanuma
发明人： Nobuhiro Komine , Shigeki Nojima , Keita Asanuma
IPC分类号： G06F19/00
CPC分类号： G03F7/70516 , G03F7/70441 , G03F7/70616 , G03F7/70991
摘要： An apparatus for correcting a plurality of exposure tools has an image memory configured to store images projected by the exposure tools, a contrast evaluator configured to rank the exposure tools based on contrasts of the images, an evenness evaluator configured to determine whether optical proximity effects of the exposure tools are equivalent or not based on the images, and an exposure tool controller configured to adjust each contrast of the images projected by the exposure tools so that all optical proximity effects of the exposure tools is equivalent to an optical proximity effect of the lowest ranked exposure tool having the lowest contrast.
摘要翻译：用于校正多个曝光工具的装置具有图像存储器，其被配置为存储由曝光工具投影的图像;对比度评估器，被配置为基于图像的对比度对曝光工具进行排序;均匀度评估器，被配置为确定是否光学邻近效应曝光工具基于图像是等效的，以及曝光工具控制器，被配置为调整由曝光工具投射的图像的每个对比度，使得曝光工具的所有光学邻近效果等同于最低具有最低对比度的排名曝光工具。

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