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1. 发明专利

JPS59116739A X-ray photographing method using polaroid film and its film cassette 失效
标题翻译：使用极性膜及其薄膜的X射线摄影方法
公开(公告)号：JPS59116739A
公开(公告)日：1984-07-05
申请号：JP22954982
申请日：1982-12-24
申请人： Takeshi Koshiba
发明人： KOSHIBA TAKESHI
IPC分类号： A61B6/00 , G03B42/04 , G03C5/16
CPC分类号： G03B42/04
摘要： PURPOSE:To enable the exact photographing of many calculi and the small fragments of the stone stagnating in the minor calyx of the kidney in a short time by disposing a Polaroid film cassette enclosed in a sterilized surgery cloth of PVC behind the incised internal organ and making X-ray photographing. CONSTITUTION:A Polaroid film cassette 1 is enclosed in a sterilized surgery cloth 11 of PVC, and is inserted into an incised part 2 by operation so as to be disposed behind the kidney 3. Although an exposing condition varies with the size of the object, it is set approximately at 70-80 kilovolt peak voltage in 40 milliampere seconds. After the photographing by exposure is finished, the cassette 1 is loaded into a Polaroid Land camera and a tube is pulled in accordance with an ordinary procedure, whereby the film is developed. The above-mentioned operations are all performed alongside the operating table and the time required for the photographing is within one minute.
摘要翻译：目的：为了能够在短时间内精确地拍摄许多结石和狭窄的石块，在石棺的小萼片中放置一个包围在经切割内脏的PVC灭菌手术布中的宝丽来胶片盒，并制作 X光摄影。构成：将偏光片膜1封入PVC的无菌手术用织物11中，通过操作将其插入切口部2中，使其设置在肾脏3的后方。虽然曝光条件随物体的大小而变化，在40毫安秒内约为70-80千伏峰值电压。在通过曝光进行拍摄完成之后，将盒1装载到宝丽来陆相机中，并按照常规步骤拉出管，由此显影该胶片。上述操作都与操作台一起执行，并且拍摄所需的时间在一分钟内。

2. 发明申请

US20130220970A1 METHOD FOR FABRICATING TEMPLATE 审中-公开
标题翻译：制作模板的方法
公开(公告)号：US20130220970A1
公开(公告)日：2013-08-29
申请号：US13597828
申请日：2012-08-29
申请人： Takeshi KOSHIBA
发明人： Takeshi KOSHIBA
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a method for fabricating a template, includes providing a mask pattern on a template substrate, processing the template substrate using the mask pattern as a mask so as to provide a first pattern on a first area in the template substrate and a second pattern on a second area which is located adjacent to the first area in the template, providing a first mask material on the template substrate so as to cover the first area, and processing the second area using the first mask material as a mask so as to lower a height of a surface of the second area than a height of a surface of the first area.
摘要翻译：根据一个实施例，一种制造模板的方法包括在模板衬底上提供掩模图案，使用掩模图案作为掩模处理模板衬底，以便在模板衬底的第一区域上提供第一图案，以及在与模板中的第一区域相邻的第二区域上设置第二图案，在模板基板上提供第一掩模材料以覆盖第一区域，并且使用第一掩模材料作为掩模来处理第二区域，以便以降低第二区域的表面的高度，而不是第一区域的表面的高度。

3. 发明申请

US20120009791A1 PATTERN FORMATION METHOD 审中-公开
标题翻译：模式形成方法
公开(公告)号：US20120009791A1
公开(公告)日：2012-01-12
申请号：US13175349
申请日：2011-07-01
申请人： Yingkang ZHANG , Masafumi Asano , Takeshi Koshiba
发明人： Yingkang ZHANG , Masafumi Asano , Takeshi Koshiba
IPC分类号： H01L21/311 , B29C35/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern formation method is disclosed. The method can include filling an imprint material between a first protrusion-depression pattern of a first pattern transfer layer formed on a first replica substrate and a second pattern transfer layer being transparent to energy radiation and formed on a second replica substrate transparent to the energy radiation. The method can include curing the imprint material by irradiating the imprint material with the energy radiation from an opposite surface side of the second replica substrate. The method can include releasing the first protrusion-depression pattern from the imprint material. The method can include forming a second protrusion-depression pattern in the second pattern transfer layer by processing the second pattern transfer layer using the imprint material as a mask.
摘要翻译：根据一个实施例，公开了图案形成方法。该方法可以包括在形成在第一复制基板上的第一图案转移层的第一突起 - 凹陷图案和对能量辐射透明的第二图案转移层之间填充压印材料，并形成在对能量辐射透明的第二复制基板上。该方法可以包括通过用来自第二复制基板的相对表面侧的能量辐射照射压印材料来固化压印材料。该方法可以包括从压印材料释放第一突起 - 凹陷图案。该方法可以包括通过使用压印材料作为掩模处理第二图案转印层来在第二图案转印层中形成第二突起凹陷图案。

4. 发明授权

US07889910B2 Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program 失效
标题翻译：字符图案提取方法，带电粒子束绘制方法和字符图案提取程序
公开(公告)号：US07889910B2
公开(公告)日：2011-02-15
申请号：US11797531
申请日：2007-05-04
申请人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
发明人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
IPC分类号： G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
摘要翻译：字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案，数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间最缩短。

5. 发明申请

US20090095711A1 MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：微生物装置和装置制造方法
公开(公告)号：US20090095711A1
公开(公告)日：2009-04-16
申请号：US12237806
申请日：2008-09-25
申请人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
发明人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
IPC分类号： B44C1/22 , B29C43/02
CPC分类号： B29C43/021 , B29C33/303 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/525 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7003 , G03F9/7042 , G03F9/7088
摘要： A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.
摘要翻译：一种用于将包括图案的原稿板压在基板上以将图案转印到基板上的微加工装置包括：第一测量单元，用于测量基板和基板上方的板之间的相对位置偏移;位置校正单元，用于校正相对位置在基板和板之间，基于由第一测量单元测量的相对位置位移，将图案转印到基板的第一预定位置上;按压单元，用于将基板上方的基板向下压在基板上，在通过位置校正单元校正基板和板之间的相对位置偏移的状态下，在基板上转印图案;以及第二测量单元，用于测量在基板上传送的图案与先前形成的图案之间的相对位置关系在基板上。

6. 发明授权

US07482604B2 Electron beam lithography apparatus, lithography method, lithography program, and manufacturing method of a semiconductor device 失效
标题翻译：电子束光刻设备，光刻方法，光刻程序和半导体器件的制造方法
公开(公告)号：US07482604B2
公开(公告)日：2009-01-27
申请号：US11430044
申请日：2006-05-09
申请人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
发明人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
IPC分类号： G21G5/00
CPC分类号： H01J37/3026 , H01J2237/31761
摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.
摘要翻译：根据本发明的一个方面，提供了一种电子束光刻设备，包括：第一设定单元，被配置为基于半导体衬底的布局信息来设置半导体衬底上的绘制位置;第二设置单元，被配置为设置有效范围基于所述半导体衬底的形状信息在所述半导体衬底上，确定单元，被配置为确定所述绘制位置是否在所述有效范围内;以及照射单元，被配置为当所述确定单元确定时照射所述半导体衬底电子束绘图位置在有效范围内。

7. 发明申请

US20080001077A1 Charged particle beam drawing apparatus, charged particle beam drawing method and semiconductor device manufacturing method 审中-公开
标题翻译：带电粒子束拉制装置，带电粒子束拉制法和半导体器件制造方法
公开(公告)号：US20080001077A1
公开(公告)日：2008-01-03
申请号：US11808070
申请日：2007-06-06
申请人： Tetsuro Nakasugi , Takeshi Koshiba
发明人： Tetsuro Nakasugi , Takeshi Koshiba
IPC分类号： G01D18/00 , G03C5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A charged particle beam drawing apparatus is disclosed, which includes a drawing section which draws a pattern on a resist film applied to a substrate to be processed on which a under-layer mark is formed, by a charged particle beam, a position computing section which computes a position of the under-layer mark and a position of a displacement measuring pattern drawn by the drawing section on the resist film using a correction coefficient, by scanning the under-layer mark and the displacement measuring pattern by a charged particle beam, a displacement amount computing section which computes an amount of displacement from the positions of the under-layer mark and the displacement measuring pattern, and a correcting section which corrects the correction coefficient according to the amount of displacement.
摘要翻译：公开了一种带电粒子束描绘装置，其包括：绘制部分，其通过带电粒子束在施加到其上形成底层标记的待处理基板上的抗蚀剂膜上绘制图案;位置计算部分，使用校正系数，通过用带电粒子束扫描下层标记和位移测量图案，计算下层标记的位置和由图形部分在抗蚀剂膜上绘制的位移测量图案的位置，位移量计算部，其从所述下层标记和所述位移测量图案的位置计算位移量;以及校正部，其根据所述位移量来校正所述校正系数。

8. 发明申请

US20070263921A1 Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program 失效
标题翻译：字符图案提取方法，带电粒子束绘制方法和字符图案提取程序
公开(公告)号：US20070263921A1
公开(公告)日：2007-11-15
申请号：US11797531
申请日：2007-05-04
申请人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
发明人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
IPC分类号： G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
摘要翻译：字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案，数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间最缩短。

9. 发明授权

US09389513B2 Method of forming pattern, system for calculating resist coating distribution and program for calculating the same 有权
标题翻译：形成图案的方法，计算抗蚀剂涂层分布的系统和计算方法
公开(公告)号：US09389513B2
公开(公告)日：2016-07-12
申请号：US12879569
申请日：2010-09-10
申请人： Takeshi Koshiba
发明人： Takeshi Koshiba
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/20 , G06F17/50
摘要： In one embodiment, a method of forming a resist pattern on a substrate is provided. Information of a template pattern formed on a template based on template pattern data is obtained. A resist coating distribution is set based on the information of the template pattern. A resist is formed on a substrate based on the resist coating distribution. The template is brought into contact with the resist formed on the substrate so that the resist is filled into the template pattern formed on the template. The filled resist is cured. The template is separated from the cured resist so that a resist pattern is formed on the substrate.
摘要翻译：在一个实施例中，提供了在基板上形成抗蚀剂图案的方法。获得基于模板图案数据在模板上形成的模板图案的信息。基于模板图案的信息设置抗蚀涂层分布。基于抗蚀剂涂层分布，在基板上形成抗蚀剂。使模板与形成在基板上的抗蚀剂接触，使得抗蚀剂被填充到模板上形成的模板图案中。填充的抗蚀剂固化。将模板与固化的抗蚀剂分离，使得在基板上形成抗蚀剂图案。

10. 发明授权

US08423926B2 Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask 有权
标题翻译： EUV掩模的掩模验证方法和EUV掩模的制造方法
公开(公告)号：US08423926B2
公开(公告)日：2013-04-16
申请号：US13237790
申请日：2011-09-20
申请人： Takeshi Koshiba , Hidefumi Mukai , Seiro Miyoshi , Kazunori Iida
发明人： Takeshi Koshiba , Hidefumi Mukai , Seiro Miyoshi , Kazunori Iida
IPC分类号： G06F17/50
CPC分类号： G03F1/22 , B82Y10/00 , B82Y40/00 , G03F1/70
摘要： According to one embodiment, an acceptance determining method of a blank for an EUV mask includes evaluating whether or not an integrated circuit device becomes defective, on the basis of information of a defect contained in a blank for an EUV mask and design information of a mask pattern to be formed on the blank. The integrated circuit device is to be manufactured by using the EUV mask. The EUV mask is manufactured by forming the mask pattern on the blank. And the blank is determined to be non-defective in a case that the integrated circuit device is not to be defective.
摘要翻译：根据一个实施例，用于EUV掩模的空白的接受确定方法包括基于包含在EUV掩码的空白中的缺陷的信息和掩模的设计信息来评估集成电路器件是否变得有缺陷图案要在空白上形成。集成电路器件将通过使用EUV掩模来制造。通过在空白上形成掩模图案来制造EUV掩模。在集成电路装置不具有缺陷的情况下，判断为无缺陷。

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