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1. 发明授权

US07078862B2 Beam source and beam processing apparatus 失效
标题翻译：光源和光束处理装置
公开(公告)号：US07078862B2
公开(公告)日：2006-07-18
申请号：US10797596
申请日：2004-03-11
申请人： Akira Fukuda , Akio Shibata , Hirokuni Hiyama , Katsunori Ichiki , Kazuo Yamauchi , Seiji Samukawa
发明人： Akira Fukuda , Akio Shibata , Hirokuni Hiyama , Katsunori Ichiki , Kazuo Yamauchi , Seiji Samukawa
IPC分类号： H05B31/26 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32357
摘要： A beam source has a plasma generating chamber, an antenna for generating plasma in the plasma generating chamber, a first electrode disposed in the plasma generating chamber, and a second electrode disposed in the plasma generating chamber. Both of the antenna and the second electrode face the first electrode. The beam source also includes a power supply for applying a voltage between the first electrode and the second electrode to extract particles from the plasma generated by the antenna. The beam source applies various kinds of beams having a large diameter, such as a positive ion beam, a negative ion beam, and a neutral particle beam, uniformly to a workpiece.
摘要翻译：光束源具有等离子体产生室，用于在等离子体产生室中产生等离子体的天线，设置在等离子体发生室中的第一电极和设置在等离子体产生室中的第二电极。天线和第二电极都面向第一电极。光束源还包括用于在第一电极和第二电极之间施加电压从而从天线产生的等离子体中提取粒子的电源。光束源对工件均匀地施加各种具有大直径的光束，例如正离子束，负离子束和中性粒子束。

2. 发明授权

US06861642B2 Neutral particle beam processing apparatus 有权
标题翻译：中性粒子束处理装置
公开(公告)号：US06861642B2
公开(公告)日：2005-03-01
申请号：US10451633
申请日：2002-03-22
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： C23C14/32 , G21K1/14 , H01J37/317 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , H05H3/00 , H05H3/02
CPC分类号： H01J37/32357 , G21K1/14 , H01J37/3178 , H05H3/02
摘要： A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), an orifice electrode (5) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (4) disposed upstream of the orifice electrode (5) in the vacuum chamber (3). The orifice electrode (5) has orifices (5a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (5) and the grid electrode (4) via a dielectric (5b) to extract positive ions from the plasma generated by the plasma generator and pass the extracted positive ions through the orifices (5a) in the orifice electrode (5).
摘要翻译：中性粒子束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在工件保持器（20）之间的孔电极（5）和等离子体发生器，以及设置在真空室（3）中的孔电极（5）的上游的栅电极（4）。孔口电极（5）具有限定在其中的孔口（5a）。中性粒子束处理装置还包括电压施加单元，用于通过电介质（5b）在孔电极（5）和栅电极（4）之间施加电压，以从等离子体发生器产生的等离子体中提取正离子并通过通过孔电极（5）中的孔（5a）提取的正离子。

3. 发明授权

US06468598B1 Magnetic disk and method of making thereof 失效
标题翻译：磁盘及其制造方法
公开(公告)号：US06468598B1
公开(公告)日：2002-10-22
申请号：US09598454
申请日：2000-06-22
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Kenji Watanabe , Kazuo Yamauchi , Shinta Kunitomo , Tohru Satake , Yasushi Tohma , Juichi Ishiguro
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Kenji Watanabe , Kazuo Yamauchi , Shinta Kunitomo , Tohru Satake , Yasushi Tohma , Juichi Ishiguro
IPC分类号： B05D500
CPC分类号： C23C14/048 , C23C16/047 , G11B5/82 , G11B5/84 , G11B5/8404 , G11B5/8408
摘要： It is an object of the present invention to provide a method of making a magnetic disk having a uniform textured structure with micro-waviness of fabrication depth of less than 20 nm, preferably less than 10 nm, and a local depth deviation of less than 5%, in which texture patterns are characterized by the fact that lateral surfaces of the structure are sloped or curved. The object has been achieved in a method for making a magnetic disk, having micro-waviness on a fabrication surface of a substrate for reducing dynamic friction and controlling head float, by rotating and irradiating the fabrication surface with a high energy beam from a beam surface at an inclined angle to the substrate surface. The surface is irradiated through a shielding mask having a specific pattern, so as to produce a transcription pattern on the substrate surface to produce a textured structure with micro-waviness having sloped or curved side surfaces.
摘要翻译：本发明的目的是提供一种制造具有均匀纹理结构的磁盘的方法，其制造深度小于20nm，优选小于10nm，局部深度偏差小于5 ％，其中纹理图案的特征在于结构的侧表面是倾斜的或弯曲的。该目的已经在制造磁盘的方法中实现，其通过用来自梁表面的高能量光束旋转和照射制造表面而在基板的制造表面上具有微波纹以减少动态摩擦和控制磁头浮动与基板表面成倾斜的角度。通过具有特定图案的屏蔽掩模照射该表面，以在基板表面上产生转印图案，以产生具有倾斜或弯曲侧表面的微波纹的纹理结构。

4. 发明授权

US5998097A Fabrication method employing energy beam source 失效
标题翻译：采用能量束源的制造方法
公开(公告)号：US5998097A
公开(公告)日：1999-12-07
申请号：US300844
申请日：1999-04-28
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Tadasuke Kobata , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Tadasuke Kobata , Yotaro Hatamura , Masayuki Nakao
IPC分类号： H01J37/305 , H01J37/317 , H05H3/02 , G03C5/00 , G21K5/10
CPC分类号： H05H3/02 , H01J37/3053 , H01J37/3178
摘要： An energy beam source is used in micro-fabrication tasks, such as fabrication of specific patterns, in-situ bonding, repair, connection and disconnection of electrical paths, applicable to semiconductor devices and other micro-sized circuits in integrated circuits. The beam source is made compact so that several sources can be located inside a vacuum vessel and in conjunction with micro-manipulators or micro-movement stages operated under light or an electron microscope. The beam source is provided with at least three electrodes, and by applying a selected voltage, i.e., high frequency voltage, direct current voltage and ground voltage, on each the three electrodes in association with film-forming substance(s), virtually any type of deposit can be formed at any location of a workpiece. Different types of particle beams, such as positive and negative ion beams, a highspeed neutral atomic beam, a radical particle beam, an electron beam can be produced from the beam source by judicious choice of operating-parameters and the film-forming material which may be a process gas or an applied coating. By using the beam source and the method of deposit forming presented, virtually any type of fabrication task can be carried out on any surface and any location of a workpiece in a three-dimensional space.
摘要翻译：能量束源用于微加工任务，例如制造特定图案，原位粘合，修复，连接和断开电路径，适用于集成电路中的半导体器件和其他微型尺寸电路。光束源是紧凑的，使得几个源可以位于真空容器内并且与在微光或电子显微镜下操作的微操纵器或微移动台结合。光束源设置有至少三个电极，并且通过在与成膜物质相关联的三个电极上的每一个上施加选择的电压，即高频电压，直流电压和接地电压，实际上任何类型的沉积物可以形成在工件的任何位置。可以通过明智地选择操作参数和成膜材料，从光束源产生不同类型的粒子束，例如正离子束和负离子束，高速中性原子束，自由基粒子束，电子束，作为工艺气体或涂覆涂层。通过使用光束源和沉积物形成方法，几乎任何类型的制造任务都可以在三维空间中的工件的任何表面和任何位置上进行。

5. 发明授权

US5883470A Fast atomic beam source with an inductively coupled plasma generator 失效
标题翻译：具有电感耦合等离子体发生器的快速原子束源
公开(公告)号：US5883470A
公开(公告)日：1999-03-16
申请号：US800278
申请日：1997-02-13
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Yasushi Toma , Masao Saitoh
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Yasushi Toma , Masao Saitoh
IPC分类号： G21K1/00 , B81B5/00 , G21K5/04 , H05H3/02
CPC分类号： H05H3/02
摘要： A fast atomic beam (FAB) source is capable of generating fast atomic beams having characteristics of a high beam density, precise directionality, and a wide range of controlled out put energy levels. The FAB source includes a discharge tube, an inductively coupled plasma generator for generating gas plasma in the discharge tube from gas introduced therein, positive and negative electrodes for accelerating ions to control the beam for a variety of energy levels. The negative electrode has a beam control opening for generating a FAB, wherein directionability, neutralization factor, and other FAB characteristics are controlled.
摘要翻译：快原子束（FAB）源能够产生具有高光束密度，精确方向性和宽范围的受控输出能级的特征的快速原子束。 FAB源包括放电管，电感耦合等离子体发生器，用于在其中引入的气体在放电管中产生气体等离子体，用于加速离子以控制光束以达到各种能级的正极和负极。负极具有用于产生FAB的光束控制开口，其中控制方向性，中和因子和其他FAB特性。

6. 发明授权

US06849857B2 Beam processing apparatus 有权
标题翻译：梁加工设备
公开(公告)号：US06849857B2
公开(公告)日：2005-02-01
申请号：US10471610
申请日：2002-03-22
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： H05H1/46 , B01J19/08 , C23C14/32 , H01J37/08 , H01J37/30 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32137 , H01J37/08 , H01J37/30 , H01J37/32357 , H01J2237/0827
摘要： A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.
摘要翻译：光束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在真空室（3）中的第一电极（4）第二电极（5），设置在真空室（3）中的第一电极（4）的上游。光束处理装置还包括用于在第一电极（4）和第二电极（5）之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子（6）和负离子的电压施加单元。

7. 发明申请

US20050020070A1 Etching method and apparatus 失效
标题翻译：蚀刻方法和装置
公开(公告)号：US20050020070A1
公开(公告)日：2005-01-27
申请号：US10484502
申请日：2002-09-24
申请人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
发明人： Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
IPC分类号： G21K1/00 , G21K5/04 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/461 , H05H3/02
CPC分类号： H01J37/32357 , H01J37/32422 , H01L21/3065 , H01L21/67069
摘要： An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.
摘要翻译：蚀刻装置包括用于保持工件（X）的工件保持器（21），用于在真空室（3）中产生等离子体（30）的等离子体发生器（10,20），设置在真空室工件保持器（21）和等离子体发生器（10,20）以及设置在真空室（3）中的孔电极（4）上游的栅电极（5）。孔口电极（4）具有限定在其中的孔（4a）。蚀刻装置还包括用于在孔电极（4）和栅电极（5）之间施加电压的电压施加单元（25,26），以加速由等离子体发生器（10,20）产生的等离子体（30）的离子并且将提取的离子通过孔口电极（4）中的孔（4a），以产生具有10eV至50eV的能量的准直中性粒子束。

8. 发明授权

US06671034B1 Microfabrication of pattern imprinting 失效
标题翻译：图案压印的微加工
公开(公告)号：US06671034B1
公开(公告)日：2003-12-30
申请号：US09301311
申请日：1999-04-29
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Tohru Satake , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Tohru Satake , Yotaro Hatamura , Masayuki Nakao
IPC分类号： G03B2754
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/2014
摘要： The object of the present invention IS to provide an optical imprinting apparatus and method for producing a two-dimensional pattern, having line widths less than the wavelength of an exposure light. The evarnescent (proximity) field effect is adopted to realize the apparatus and method. An optical imprinting apparatus comprises: a container in which light is enclosed therein; an exposure-mask having a proximity field exposure pattern firmly fixed to a section of said container for exposing said exposure pattern on a photo-sensitive material through an evanescent field by said light enclosed therein; and a light source for supplying said light in said container.
摘要翻译：本发明的目的是提供一种用于产生具有小于曝光光的波长的线宽的二维图案的光学压印装置和方法。采用实现（邻近）场效应实现装置和方法。一种光学压印设备包括：容纳在其中的光; 曝光掩模，其具有牢固地固定在所述容器的一部分上的接近场曝光图案，用于通过所述光包围在所述光敏材料上的所述光衰弱场曝光所述曝光图案; 以及用于将所述光提供在所述容器中的光源。

9. 发明授权

US6015976A Fabrication apparatus employing energy beam 失效
标题翻译：采用能量束的制造装置
公开(公告)号：US6015976A
公开(公告)日：2000-01-18
申请号：US195254
申请日：1998-11-18
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Takao Kato , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Takao Kato , Yotaro Hatamura , Masayuki Nakao
IPC分类号： G03F1/00 , G03F1/20 , G03F7/00 , G03F7/20 , H01J9/02 , H01L21/033 , H01L21/308 , H01J37/302
CPC分类号： H01L21/3086 , G03F7/00 , G03F7/001 , G03F7/2065 , G03F7/70358 , H01J9/025 , H01L21/0331 , H01L21/0337 , H01J2209/0223
摘要： Three-dimensional ultra-fine micro-fabricated structures of the order of .mu.m and less are produced for use in advanced optical communication systems and quantum effect devices. Basic components are an energy beam source, a mask member and a specimen stage. The mask member is an independent component, and various combinations of relative movements of the mask member with respect to the beam axis and/or workpiece can be made with high precision to produce curved or slanted surfaces on a workpiece, thereby producing multiple lines or arrays of convex or concave micro-lenses. Other examples of fine-structures include deposition of thin films in a multiple line pattern or in an array pattern. Because of flexibility of fabrication and material, labyrinth seals having curved surfaces with grooved structures can be used as friction reduction devices for bearing components. Fine groove dimensions of the order of nm are possible. Energy beams can be any of fast atomic beams, ion beams, electron beam, laser beams, radiation beams, X-ray beams and radical particle beams. Parallel beams are often used, but when a focused bean is used, a technique of reduced projection imaging can be utilized to produce fine-structures of the order of nm.
摘要翻译：产生了数量级小于等于30的数量级的三维超细微结构，用于先进的光通信系统和量子效应器件。基本组件是能量束源，掩模构件和样品台。掩模构件是独立的部件，并且可以高精度地制造掩模构件相对于射束轴线和/或工件的相对运动的各种组合，以在工件上产生弯曲或倾斜的表面，由此产生多个线或阵列的凸或微型微透镜。精细结构的其他实例包括以多线图案或阵列图案沉积薄膜。由于制造和材料的灵活性，具有带槽结构的曲面的迷宫式密封件可用作轴承部件的摩擦减小装置。可以使nm的数量级的细槽尺寸。能量束可以是快速原子束，离子束，电子束，激光束，辐射束，X射线束和自由基粒子束中的任何一种。通常使用平行光束，但是当使用聚焦光束时，可以利用减少投影成像的技术来产生nm级数的精细结构。

10. 发明授权

US07588671B2 Microfluidic treatment method and device 失效
标题翻译：微流体处理方法及装置
公开(公告)号：US07588671B2
公开(公告)日：2009-09-15
申请号：US10992770
申请日：2004-11-22
申请人： Tomoyuki Morita , Akiko Miya , Akira Fukuda , Motohiko Nomi , Katsunori Ichiki , Manabu Tsujimura , Shunsuke Shimizu
发明人： Tomoyuki Morita , Akiko Miya , Akira Fukuda , Motohiko Nomi , Katsunori Ichiki , Manabu Tsujimura , Shunsuke Shimizu
IPC分类号： G01N27/447 , B01D57/02
CPC分类号： B01L3/50273 , B01F5/061 , B01F5/0646 , B01F5/0647 , B01F5/0654 , B01F7/00291 , B01F11/0071 , B01F11/0266 , B01F13/0059 , B01F2005/0621 , B01J19/0093 , B01J2219/00783 , B01J2219/00889 , B01J2219/00891 , B01L3/502738 , B01L3/502746 , B01L2300/0816 , B01L2300/0867 , B01L2400/0421 , B01L2400/082 , G01N27/44704 , G01N27/44791
摘要： The present invention relates to a microchip apparatus using liquids. More specifically, the invention provides a liquid mixing apparatus comprising at least two microchannels for introducing liquids and a mixing microchannel that connects to the at least two liquid-introducing microchannels, wherein the liquids are transported from the respective liquid-introducing microchannels toward the mixing microchannel, the apparatus further comprising means for enhancing the mixing of the liquids that converge in the mixing microchannel. The invention also provides an electrophoretic apparatus and a microchip electrophoretic apparatus for denaturing gradient gel electrophoresis.
摘要翻译：本发明涉及使用液体的微芯片装置。更具体地，本发明提供了一种液体混合装置，其包括用于引入液体的至少两个微通道和连接至少两个液体引入微通道的混合微通道，其中液体从相应的液体引入微通道转移到混合微通道该装置还包括用于增强会聚在混合微通道中的液体的混合的装置。本发明还提供了用于变性梯度凝胶电泳的电泳装置和微芯片电泳装置。

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