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    • 8. 发明授权
    • Etching method and apparatus
    • 蚀刻方法和装置
    • US07314574B2
    • 2008-01-01
    • US10484502
    • 2002-09-24
    • Katsunori IchikiKazuo YamauchiHirokuni HiyamaSeiji Samukawa
    • Katsunori IchikiKazuo YamauchiHirokuni HiyamaSeiji Samukawa
    • B44C1/22H01L21/00
    • H01J37/32357H01J37/32422H01L21/3065H01L21/67069
    • An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.
    • 蚀刻装置包括用于保持工件(X)的工件保持器(21),用于在真空室(3)中产生等离子体(30)的等离子体发生器(10,20),设置在真空室 工件保持器(21)和等离子体发生器(10,20)以及设置在真空室(3)中的孔电极(4)上游的栅电极(5)。 孔口电极(4)具有限定在其中的孔(4a)。 蚀刻装置还包括用于在孔电极(4)和栅电极(5)之间施加电压的电压施加单元(25,26),以加速由等离子体发生器(10,20)产生的等离子体(30)的离子 并且将提取的离子通过孔口电极(4)中的孔(4a),以产生具有10eV至50eV的能量的准直中性粒子束。
    • 10. 发明授权
    • Neutral particle beam processing apparatus
    • 中性粒子束处理装置
    • US06909086B2
    • 2005-06-21
    • US10471742
    • 2002-03-22
    • Seiji SamukawaKatsunori IchikiKazuo YamauchiHirokuni Hiyama
    • Seiji SamukawaKatsunori IchikiKazuo YamauchiHirokuni Hiyama
    • H05H1/46C23C14/32H01J37/32H01L21/302H01L21/3065H01L21/31H05H3/02H01L21/306H05H3/00
    • H05H3/02
    • A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).
    • 中性粒子束处理装置包括用于保持工件(X)的工件保持器(20),用于通过施加高频电场在真空室(3)中产生等离子体的等离子体发生器,孔电极(4) 设置在工件保持器(20)和等离子体发生器之间,以及栅极(5),设置在真空室(3)中的孔电极(4)的上游。 孔口电极(4)具有限定在其中的孔(4a)。 中性粒子束处理装置还包括用于在用作阳极的孔电极(4)和用作阴极的栅电极(5)之间施加电压的电压施加单元,同时施加的高频电场 等离子体发生器被中断,以加速由等离子体发生器产生的等离子体中的负离子,并使加速的负离子通过孔口电极(4)中的孔(4a)。