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1. 发明申请

WO2011159905A3 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040713
申请日：2011-06-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

2. 发明申请

WO2012048044A2 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
标题翻译：臭氧固化和固化后水分处理模块
公开(公告)号：WO2012048044A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054984
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/68
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.
摘要翻译：一种具有多个沉积室的基板处理系统，以及可操作以在沉积室之一与负载锁定基板保持区域之间移动基板的第一机器人臂。该系统还可以具有第二机器人臂，该第二机器人臂可操作以在加载锁定衬底保持区域和衬底固化和处理模块的固化室之间移动衬底。基板固化和处理模块附接到负载锁定基板保持区域，并且可以包括：用于在包含臭氧的气氛中固化介电层的固化室和用于在包含水的气氛中处理固化的介电层的处理室汽。固化室可以相对于处理室垂直定位。模块还可以包括可操作地连接到固化室和处理室的加热系统，其中加热系统可操作以将固化室的第一温度调节到从大约150℃到大约200℃，并且调节处理室的第二温度从约80℃至约100℃。该模块还可以在固化室和处理室两者上包括通道门。每个入口门可操作地移动到打开位置以接收基底，并且可操作以在基底正在固化或处理期间移动到封闭的密封位置。

3. 发明申请

WO2011009002A3 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
公开(公告)号：WO2011009002A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/042194
申请日：2010-07-15
申请人： APPLIED MATERIALS, INC. , CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
发明人： CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
IPC分类号： H01L21/205
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

4. 发明申请

WO2011009002A2 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
标题翻译：化学气相沉积室的流动控制特性
公开(公告)号：WO2011009002A2
公开(公告)日：2011-01-20
申请号：PCT/US2010042194
申请日：2010-07-15
申请人： APPLIED MATERIALS INC , CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
发明人： CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的设备和方法。在一个方面中，提供了一种气体分配组件，其包括环形主体，该环形主体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部以及形成的座进入内部环形壁，位于上部凹部中的上部板，其包括具有穿过其形成的多个第一孔的盘形主体以及定位在该底座上的底板，该底部板包括盘形主体，该盘形主体具有多个第二形成在其中的与第一孔对齐的孔，以及形成在第二孔与底板之间的多个第三孔，底板密封地联接到上板，以将多个第一孔和第二孔与多个第三孔。

5. 发明申请

WO2012048044A3 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
公开(公告)号：WO2012048044A3
公开(公告)日：2012-04-12
申请号：PCT/US2011/054984
申请日：2011-10-05
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , PINSON II, Jay, D. , FLOYD, Kirby, H. , KHAN, Adib , VENKATARAMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , PINSON II, Jay, D. , FLOYD, Kirby, H. , KHAN, Adib , VENKATARAMAN, Shankar
IPC分类号： H01L21/3105 , H01L21/68
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.

6. 发明申请

WO2011159905A2 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040713
申请日：2011-06-16
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , PINSON II, Jay D. , FLOYD, Kirby H. , KHAN, Adib , VENKATARAMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , PINSON II, Jay D. , FLOYD, Kirby H. , KHAN, Adib , VENKATARAMAN, Shankar
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

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