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1. 发明申请

WO2011159905A3 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040713
申请日：2011-06-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

2. 发明申请

WO2012048044A2 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
标题翻译：臭氧固化和固化后水分处理模块
公开(公告)号：WO2012048044A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054984
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/68
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.
摘要翻译：一种具有多个沉积室的基板处理系统，以及可操作以在沉积室之一与负载锁定基板保持区域之间移动基板的第一机器人臂。该系统还可以具有第二机器人臂，该第二机器人臂可操作以在加载锁定衬底保持区域和衬底固化和处理模块的固化室之间移动衬底。基板固化和处理模块附接到负载锁定基板保持区域，并且可以包括：用于在包含臭氧的气氛中固化介电层的固化室和用于在包含水的气氛中处理固化的介电层的处理室汽。固化室可以相对于处理室垂直定位。模块还可以包括可操作地连接到固化室和处理室的加热系统，其中加热系统可操作以将固化室的第一温度调节到从大约150℃到大约200℃，并且调节处理室的第二温度从约80℃至约100℃。该模块还可以在固化室和处理室两者上包括通道门。每个入口门可操作地移动到打开位置以接收基底，并且可操作以在基底正在固化或处理期间移动到封闭的密封位置。

3. 发明申请

WO2011143012A2 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
标题翻译：加热器具有独立的中心区域控制
公开(公告)号：WO2011143012A2
公开(公告)日：2011-11-17
申请号：PCT/US2011035014
申请日：2011-05-03
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
发明人： LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/68792
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.
摘要翻译：一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其耦合到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度衬底的上表面支撑。

4. 发明公开

KR20200136495A 극도의 균일성의 가열식 기판 지지 조립체 审中-公开
公开(公告)号：KR20200136495A
公开(公告)日：2020-12-07
申请号：KR20207033946
申请日：2019-05-03
申请人： APPLIED MATERIALS INC
发明人： BENJAMINSON DAVID , PARKHE VIJAY D , KORA SIDDARAMAIAH ONKARA SWAMY , FLOYD KIRBY H , WANG JUSTIN , SAMIR MEHMET TUGRUL , LUBOMIRSKY DMITRY
IPC分类号： H01L21/683 , H01L21/67
摘要： 본원에설명된구현들은작업물표면에걸친온도균일성을가능하게하는기판지지조립체를제공한다. 일실시예에서, 몸체를포함하는기판지지조립체가제공된다. 몸체는세라믹으로만들어진다. 몸체는작업물지지표면및 장착표면을갖는다. 작업물지지표면및 접합척 몸체표면은 10 미크론미만의편평도를갖는다. 제1 가열기는몸체외부의바닥표면상에배치된다. 접합층은제1 가열기위에배치되고, 접합층은전기절연성이고, 금속으로만들어진몸체를갖는냉각베이스이다. 냉각몸체는상부냉각몸체표면및 하부냉각몸체표면을갖고, 상부냉각몸체표면은약 10 미크론미만으로편평하다.

5. 发明专利

JP2009117845A Rotational temperature control substrate pedestal for film uniformity 审中-公开
标题翻译：旋转温度控制基板用于膜片均匀性
公开(公告)号：JP2009117845A
公开(公告)日：2009-05-28
申请号：JP2008287978
申请日：2008-11-10
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LUBOMIRSKY DMITRY , FLOYD KIRBY H
IPC分类号： H01L21/683 , H01L21/31
CPC分类号： H01L21/68785 , C23C16/4409 , C23C16/45574 , C23C16/4584 , C23C16/463 , H01L21/68792
摘要： PROBLEM TO BE SOLVED: To provide a substrate pedestal for forming a uniform film in vacuum film forming. SOLUTION: A system includes a treatment chamber and a substrate supporting assembly which is at least partially arranged in the treatment chamber. The substrate supporting assembly is rotated by a motor, so that electricity, a cooling fluid, gas, and a vacuum are supplied to the rotational substrate supporting assembly in the treatment chamber from an external non-rotational source. The temperature of the substrate supported by the substrate supporting assembly is raised or lowered by using the cooling fluid and electrical connection. The electrical connection is also used for the electrostatic attraction of the substrate to the supporting assembly. One or a plurality of rotary seals are used for keeping treatment pressure and rotating the substrate assembly. The vacuum pump is connected to a tube connection mouth for attracting the substrate, and used for differential evacuation between a pair of rotational seals among two or more rotational seals. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于在真空成膜中形成均匀膜的基板基座。解决方案：系统包括处理室和至少部分地布置在处理室中的基板支撑组件。基板支撑组件由电动机旋转，使得电，冷却流体，气体和真空从外部非旋转源供应到处理室中的旋转基板支撑组件。由基板支撑组件支撑的基板的温度通过使用冷却流体和电连接而升高或降低。电连接也用于将衬底静电吸引到支撑组件。使用一个或多个旋转密封件来保持处理压力并旋转基板组件。真空泵连接到管连接口以吸引基板，并且用于在两个或更多个旋转密封之间的一对旋转密封之间的差分抽空。版权所有（C）2009，JPO＆INPIT

6. 发明专利

SG152212A1 ROTATING TEMPERATURE CONTROLLED SUBSTRATE PEDESTAL FOR FILM UNIFORMITY 未知
公开(公告)号：SG152212A1
公开(公告)日：2009-05-29
申请号：SG2008082604
申请日：2008-11-06
申请人： APPLIED MATERIALS INC
发明人： LUBOMIRSKY DMITRY , FLOYD KIRBY H
摘要： Substrate processing systems are described. The systems may include a processing chamber, and a substrate support assembly at least partially disposed within the chamber. The substrate support assembly is rotatable by a motor yet still allows electricity, cooling fluids, gases and vacuum to be transferred from a non-rotating source outside the processing chamber to the rotatable substrate support assembly inside the processing chamber. Cooling fluids and electrical connections can be used to raise or lower the temperature of a substrate supported by the substrate support assembly. Electrical connections can also be used to electrostatically chuck the wafer to the support assembly. A rotary seal or seals (which may be low friction O- rings) are used to maintain a process pressure while still allowing substrate assembly rotation. Vacuum pumps can be connected to ports which are used to chuck the wafer. The pumps can also be used to differentially pump the region between a pair of rotary seals when two or more rotary seals are present.

7. 发明专利

SG185588A1 LOADLOCK BATCH OZONE CURE 未知
公开(公告)号：SG185588A1
公开(公告)日：2012-12-28
申请号：SG2012084133
申请日：2011-06-16
申请人： APPLIED MATERIALS INC
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

8. 发明专利

SG189137A1 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 未知
公开(公告)号：SG189137A1
公开(公告)日：2013-05-31
申请号：SG2013023049
申请日：2011-10-05
申请人： APPLIED MATERIALS INC
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.

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