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1. 发明申请

WO2011143012A3 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
公开(公告)号：WO2011143012A3
公开(公告)日：2011-11-17
申请号：PCT/US2011/035014
申请日：2011-05-03
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
发明人： LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
IPC分类号： H01L21/02 , H01L21/683
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.

2. 发明申请

WO2011159905A3 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040713
申请日：2011-06-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

3. 发明申请

WO2012048044A2 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
标题翻译：臭氧固化和固化后水分处理模块
公开(公告)号：WO2012048044A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054984
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/68
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.
摘要翻译：一种具有多个沉积室的基板处理系统，以及可操作以在沉积室之一与负载锁定基板保持区域之间移动基板的第一机器人臂。该系统还可以具有第二机器人臂，该第二机器人臂可操作以在加载锁定衬底保持区域和衬底固化和处理模块的固化室之间移动衬底。基板固化和处理模块附接到负载锁定基板保持区域，并且可以包括：用于在包含臭氧的气氛中固化介电层的固化室和用于在包含水的气氛中处理固化的介电层的处理室汽。固化室可以相对于处理室垂直定位。模块还可以包括可操作地连接到固化室和处理室的加热系统，其中加热系统可操作以将固化室的第一温度调节到从大约150℃到大约200℃，并且调节处理室的第二温度从约80℃至约100℃。该模块还可以在固化室和处理室两者上包括通道门。每个入口门可操作地移动到打开位置以接收基底，并且可操作以在基底正在固化或处理期间移动到封闭的密封位置。

4. 发明申请

WO2011143012A2 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
标题翻译：加热器具有独立的中心区域控制
公开(公告)号：WO2011143012A2
公开(公告)日：2011-11-17
申请号：PCT/US2011035014
申请日：2011-05-03
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
发明人： LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/68792
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.
摘要翻译：一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其耦合到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度衬底的上表面支撑。

5. 发明申请

WO2009061737A1 COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
标题翻译：计数平衡基板支持
公开(公告)号：WO2009061737A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/082365
申请日：2008-11-04
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
发明人： LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
IPC分类号： H01L21/00 , G03F7/20
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/68742 , H01L21/68792
摘要： A semiconductor processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure and a pumping system coupled to the chamber and adapted to remove material from trie processing chamber, and a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the chamber is rigidly or rotatably coupled to the substrate support shaft. A motor coupled to the bracket vertically translates the substrate support pedestal, shaft and bracket closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support, thereby reducing the deflection of the bracket and the substrate support.
摘要翻译：具有能够将内部室压力保持在低于环境大气压力的内部的半导体处理室以及耦合到该室并适于从三维处理室移除材料的泵送系统以及衬底支撑基座，其中衬底支撑基座刚性地联接通过延伸穿过处理室的壁的衬底支撑轴。位于室外的支架刚性或可旋转地联接到基板支撑轴。耦合到支架的马达将基板支撑基座，轴和支架垂直地平移到更靠近处理板。安装在托架的端部上的活塞提供与由内部室压力变化产生的倾斜力的反平衡力并引起支架和基板支撑件位置的偏转，从而减小支架的偏转和基板支撑。

6. 发明申请

WO2012048044A3 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
公开(公告)号：WO2012048044A3
公开(公告)日：2012-04-12
申请号：PCT/US2011/054984
申请日：2011-10-05
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , PINSON II, Jay, D. , FLOYD, Kirby, H. , KHAN, Adib , VENKATARAMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , PINSON II, Jay, D. , FLOYD, Kirby, H. , KHAN, Adib , VENKATARAMAN, Shankar
IPC分类号： H01L21/3105 , H01L21/68
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.

7. 发明申请

WO2011159905A2 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040713
申请日：2011-06-16
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , PINSON II, Jay D. , FLOYD, Kirby H. , KHAN, Adib , VENKATARAMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , PINSON II, Jay D. , FLOYD, Kirby H. , KHAN, Adib , VENKATARAMAN, Shankar
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

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