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1. 发明授权

US6143598A Method of fabrication of low leakage capacitor 失效
标题翻译：低漏电容器的制造方法
公开(公告)号：US6143598A
公开(公告)日：2000-11-07
申请号：US246893
申请日：1999-02-08
申请人： John Elmslie Martin , Lap Chan , John Leonard Sudijono , Ting Cheong Ang
发明人： John Elmslie Martin , Lap Chan , John Leonard Sudijono , Ting Cheong Ang
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242
CPC分类号： H01L28/40 , H01L28/60 , H01L21/3144 , H01L21/31604 , H01L27/10852
摘要： A capacitor element of a semiconductor device used for high density semiconductor circuits is formed by the steps of forming the bottom plate of the capacitor, submitting the top of the bottom plate to plasma treatment in an oxidizing medium where nitrogen and oxygen are present, depositing a dielectric layer and submitting the top of the dielectric layer to plasma treatment in an oxidizing medium where nitrogen and oxygen are present. Various materials are used for the plasma treatment in an oxidizing medium where nitrogen and oxygen are present. While the present invention uses amorphous silicon as the dielectric material, plasma treatment in an oxidizing medium where nitrogen and oxygen are present can readily applied to a number of other dielectric materials. The objective in constructing capacitors for semiconductor circuits is to reduce the thickness of the dielectric material as much as possible and use a dielectric material for the dielectric which has a high dielectric constant, this increases the value of the capacitor electrical charge which can be carried by the capacitor. The objective of the present invention is to eliminate the leakage current between the plates of a capacitor so that the capacitor can maintain a high voltage between the top and the bottom plate.
摘要翻译：用于高密度半导体电路的半导体器件的电容器元件是通过形成电容器的底板的步骤形成的，将底板的顶部在存在氮和氧的氧化介质中进行等离子体处理，介电层，并将介电层的顶部在存在氮和氧的氧化介质中进行等离子体处理。在存在氮和氧的氧化介质中使用各种材料进行等离子体处理。虽然本发明使用非晶硅作为介电材料，但在存在氮和氧的氧化介质中的等离子体处理可以容易地应用于许多其它电介质材料。用于半导体电路构造电容器的目的是尽可能地减小电介质材料的厚度，并且使用具有高介电常数的电介质的介电材料，这增加了电容器电荷的值电容器。本发明的目的是消除电容器板之间的漏电流，使得电容器能够在顶板和底板之间保持高电压。

2. 发明授权

US6069082A Method to prevent dishing in damascene CMP process 失效
标题翻译：防止镶嵌CMP工艺中凹陷的方法
公开(公告)号：US6069082A
公开(公告)日：2000-05-30
申请号：US170734
申请日：1998-10-13
申请人： Harianto Wong , John Leonard Sudijono
发明人： Harianto Wong , John Leonard Sudijono
IPC分类号： H01L21/321 , H01L21/768 , H01L21/302
CPC分类号： H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A method of fabrication of a metal lines without dishing using damascene and chemical-mechanical polish processes. A Key feature is the hard cap layer that is only formed over the trench opening. The hard cap layer prevents dishing of the metal line and also allows faster CMP than blanket polish stop layers. The method includes forming a first dielectric layer having a first trench opening over a semiconductor structure. A metal layer is deposited in the first trench opening. The metal layer has a dimple. The metal layer is preferably composed of Al or Cu. A hard mask is formed having a first opening over the first trench opening. The first opening is at least partially over first trench opening. A hard cap layer (e.g., W or WSi.sub.x) is selectively deposited on the metal layer exposed in the first opening. The hard cap layer, the hard mask, and the metal layer are chemical-mechanical polished to completely remove the hard mask resulting in a metal line having a "dishing free" flat top surface. The chemical-mechanical polish rate of the hard cap is less than the rate of the metal layer.
摘要翻译：使用镶嵌和化学机械抛光工艺制造金属线而不进行凹陷的方法。一个主要特征是仅在沟槽开口形成的硬覆盖层。硬盖层防止金属线的凹陷，并且还允许比橡皮布抛光停止层更快的CMP。该方法包括形成具有在半导体结构上开口的第一沟槽的第一介电层。金属层沉积在第一沟槽开口中。金属层有凹坑。金属层优选由Al或Cu组成。在第一沟槽开口上形成有第一开口的硬掩模。第一开口至少部分地超过第一沟槽开口。在第一开口中暴露的金属层上选择性地沉积硬覆盖层（例如W或WSix）。硬盖层，硬掩模和金属层进行化学机械抛光，以完全去除硬掩模，从而形成具有“无凹槽”的平坦顶表面的金属线。硬帽的化学机械抛光速率小于金属层的速率。

3. 发明授权

US06813796B2 Apparatus and methods to clean copper contamination on wafer edge 失效
标题翻译：清洁晶圆边缘铜污染的设备和方法
公开(公告)号：US06813796B2
公开(公告)日：2004-11-09
申请号：US10357137
申请日：2003-02-03
申请人： Sudipto Ranendra Roy , Subhash Gupta , Simon Chooi , Xu Yi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho
发明人： Sudipto Ranendra Roy , Subhash Gupta , Simon Chooi , Xu Yi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho
IPC分类号： B08B700
CPC分类号： B08B1/04 , B08B3/04
摘要： A new apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.
摘要翻译：提供了可用于清洁半导体衬底的外边缘的新设备。在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到被清洁的表面。待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

4. 发明授权

US06720204B2 Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding 有权
标题翻译：在Cu / Cu或Cu /金属接合期间使用氢等离子体预清洁铜表面的方法
公开(公告)号：US06720204B2
公开(公告)日：2004-04-13
申请号：US10120836
申请日：2002-04-11
申请人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L24/05 , C23G5/00 , H01L21/02046 , H01L21/32136 , H01L23/4824 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05118 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4813 , H01L2224/4846 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/49111 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/05042 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
摘要翻译：一种将金属丝焊接到金属焊盘上的方法，包括以下步骤。提供一种在室内具有暴露的金属接合焊盘的半导体管芯结构。接合垫具有上表面。在等离子体源室内产生氢等离子体。用氢 - 等离子体对金属接合垫进行预清洁和钝化以去除在金属焊盘上表面上形成的任何金属氧化物。然后将线接合到钝化金属接合焊盘。

5. 发明授权

US06692579B2 Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence 失效
标题翻译：在重复气相/液相序列中使用烃和溶剂清洗半导体结构的方法
公开(公告)号：US06692579B2
公开(公告)日：2004-02-17
申请号：US09764244
申请日：2001-01-19
申请人： Sudipto Ranendra Roy , Yi Xu , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho , Subhash Gupta
发明人： Sudipto Ranendra Roy , Yi Xu , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho , Subhash Gupta
IPC分类号： B08B300
CPC分类号： H01L21/02057 , B08B3/00 , C11D7/24 , C11D7/5027 , C11D11/0047 , H01L21/02063 , H01L21/6704
摘要： A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semiconductor structure is lowered into a vapor blanket in a thermal gradient cleaning chamber at atmospheric pressure formed by heating a liquid cleaning agent below the vapor blanket and cooling the liquid cleaning agent above the vapor blanket causing it to condense and return to the bottom of the thermal gradient cleaning chamber. The semiconductor structure is then raised above the vapor blanket and the cleaning agent condenses on all of the surfaces of the semiconductor structure removing contaminants and is returned to the bottom of the chamber by gravity. In the pressurized hydrocarbon process, a semiconductor structure is placed into a variable pressure cleaning chamber, having a piston which changes the pressure by reducing or increasing the volume of the chamber. The semiconductor structure first exposed to the hydrocarbon in vapor phase, then the piston is lowered to condense the hydrocarbon. A semiconductor structure can be cleaned by either or both of these processes by repetitive vaporization/condensation cycles.
摘要翻译：一种使用与气相清洗剂进行气相冷凝的半导体结构，通过压力变化蒸发的烃或两者的组合来清洗半导体结构的方法。在热蒸发清洗剂方法中，半导体结构在大气压力的热梯度清洗室内被降低成蒸气层，所述热梯度清洗室通过将蒸气层下方的液体清洗剂加热而形成，并将该液体清洁剂冷却至蒸气层以上冷凝并返回到热梯度清洗室的底部。然后将半导体结构升高到蒸气层上方，并且清洁剂在半导体结构的所有表面上冷凝除去杂质，并通过重力返回到室的底部。在加压烃工艺中，将半导体结构放置在可变压力清洁室中，其具有通过减小或增加室的体积来改变压力的活塞。半导体结构首先暴露于气相中的烃，然后降低活塞以使烃冷凝。半导体结构可以通过这些过程中的任一个或两者通过重复的蒸发/冷凝循环进行清洁。

6. 发明授权

US06355581B1 Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability 失效
标题翻译：用于在高密度等离子体膜沉积期间增强横向蚀刻成分以提高膜间隙填充能力的气相添加剂
公开(公告)号：US06355581B1
公开(公告)日：2002-03-12
申请号：US09511276
申请日：2000-02-23
申请人： Vladislav Vassiliev , John Leonard Sudijono , Yelehanka Ramachandramurthy Pradeep , Jie Yu
发明人： Vladislav Vassiliev , John Leonard Sudijono , Yelehanka Ramachandramurthy Pradeep , Jie Yu
IPC分类号： H01L21316
CPC分类号： H01L21/02274 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/02164 , H01L21/02211 , H01L21/31612 , H01L21/31625 , H01L21/31629
摘要： A method for fabricating a silicon oxide and silicon glass layers at low temperature using High Density Plasma CVD with silane or inorganic or organic silane derivatives as a source of silicon, inorganic compounds containing boron, phosphorus, and fluorine as a doping compounds, oxygen, and gas additives is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in reactor chamber. Key feature of the invention's process is a silicon source to gas additive mole ratio, which is maintained depending on the used compound and deposition process conditions. Inorganic halide-containing compounds are used as gas additives. This feature provides the reaction conditions for the proper reaction performance that allows a deposition of a film with. good film integrity and void-free gap-fill within the steps of device structures.
摘要翻译：一种使用硅烷或无机或有机硅烷衍生物作为硅源的高密度等离子体CVD制备低温氧化硅和硅玻璃层的方法，含有硼，磷和氟的无机化合物作为掺杂化合物，氧和描述了气体添加剂。在反应器室中的整个沉积步骤中保持具有一定等离子体密度的RF等离子体。本发明方法的主要特征是硅源与气体添加剂的摩尔比，其依赖于使用的化合物和沉积工艺条件而保持。使用无机卤化物作为气体添加剂。该特征提供了允许膜沉积的适当反应性能的反应条件。良好的薄膜完整性和在设备结构的步骤内无空隙间隙填充。

7. 发明授权

US06309982B1 Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agent 有权
标题翻译：通过用还原剂掺杂无机介电层来最小化铜扩散的方法
公开(公告)号：US06309982B1
公开(公告)日：2001-10-30
申请号：US09803188
申请日：2001-03-12
申请人： Simon Chooi , Yi Xu , Yakub Aliyu , Mei-Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Ho
发明人： Simon Chooi , Yi Xu , Yakub Aliyu , Mei-Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Ho
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , H01L21/02126 , H01L21/02274 , H01L21/3115 , H01L21/31612 , H01L21/31625
摘要： A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or both) during plasma enhanced chemical vapor deposition. The resulting doped inorganic dielectric layer can reduce copper diffusion without a barrier layer reducing fabrication cost and cycle time, as well as reducing RC delay.
摘要翻译：一种通过在等离子体增强化学气相沉积期间通过用还原剂（例如磷，硫或两者）掺杂无机介电层来减少铜扩散到与铜结构相邻的无机电介质层中的方法。所得到的掺杂无机介电层可以减少铜扩散而无需阻挡层降低制造成本和循环时间，并减少RC延迟。

8. 发明授权

US06261955B1 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes 失效
标题翻译：应用气相HFACAC基化合物用于铜去污和清洗过程
公开(公告)号：US06261955B1
公开(公告)日：2001-07-17
申请号：US09618262
申请日：2000-07-18
申请人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02046 , C23F1/12 , H01L21/02079 , Y10S438/906
摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
摘要翻译：实现了集成电路制造中有效的铜去污方法。蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

9. 发明授权

US06540841B1 Method and apparatus for removing contaminants from the perimeter of a semiconductor substrate 失效
标题翻译：从半导体衬底的周边去除污染物的方法和装置
公开(公告)号：US06540841B1
公开(公告)日：2003-04-01
申请号：US09607284
申请日：2000-06-30
申请人： Sudipto Ranendra Roy , Subhash Gupta , Simon Chooi , Xu Yi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho
发明人： Sudipto Ranendra Roy , Subhash Gupta , Simon Chooi , Xu Yi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho
IPC分类号： B08B700
CPC分类号： B08B1/04 , B08B3/04
摘要： A new method and apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.
摘要翻译：提供了可用于清洁半导体衬底的外边缘的新方法和装置。在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到待清洁的表面。待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

10. 发明授权

US06475810B1 Method of manufacturing embedded organic stop layer for dual damascene patterning 失效
标题翻译：用于双镶嵌图案的嵌入式有机停止层的制造方法
公开(公告)号：US06475810B1
公开(公告)日：2002-11-05
申请号：US09636579
申请日：2000-08-10
申请人： Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu , Simon Chooi , Yakub Aliyu
发明人： Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu , Simon Chooi , Yakub Aliyu
IPC分类号： H01L2158
CPC分类号： H01L21/76834 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76832
摘要： A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.
摘要翻译：形成双镶嵌互连结构的新方法，其中在蚀刻期间互连和电介质污染的损害最小化，在下互连上具有嵌入的有机阻挡层，并且随后用含H2的等离子体或氢自由基蚀刻有机阻挡层。

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