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1. 发明申请

US20140339501A1 Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices 审中-公开
标题翻译：低功耗电子器件的低电阻率p型GaSb量子阱
公开(公告)号：US20140339501A1
公开(公告)日：2014-11-20
申请号：US13895388
申请日：2013-05-16
申请人： Brian R. Bennett , Theresa F. Chick , Mario G. Ancona , John Bradley Boos
发明人： Brian R. Bennett , Theresa F. Chick , Mario G. Ancona , John Bradley Boos
IPC分类号： H01L29/12
CPC分类号： H01L29/122 , H01L29/201 , H01L29/7783
摘要： A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1−wAs on a semi-insulating (100) InP substrate, where the InwAl1−wAs is lattice matched to InP, followed by an AlAsxSb1−x buffer layer on the InwAl1−wAs layer, an AlAsxSb1−x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1−x barrier layer on the quantum well layer, an InyAl1−ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.
摘要翻译：提供包括具有至少一个低电阻率p型GaSb量子阱的异质结构的半导体器件。异质结构包括在半绝缘（100）InP衬底上的InwAl1-wAs层，其中InwAl1-wAs与InP晶格匹配，随后是InwAl1-wAs层上的AlAsxSb1-x缓冲层，AlAsxSb1-x 缓冲层上的间隔层，间隔层上的GaSb量子阱层，量子阱层上的AlAs x Sb 1-x势垒层，势垒层上的In y Al 1-y Sb层和InAs帽。半导体器件适用于诸如场效应晶体管的低功率电子器件。

2. 发明申请

US20080258176A1 Antimonide-based compound semiconductor with titanium tungsten stack 有权
标题翻译：锑化合物半导体与钛钨叠层
公开(公告)号：US20080258176A1
公开(公告)日：2008-10-23
申请号：US11788145
申请日：2007-04-18
申请人： Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
发明人： Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
IPC分类号： H01L23/48 , H01L21/3205 , H01L21/335 , H01L31/00
CPC分类号： H01L29/66431 , H01L29/7783
摘要： An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
摘要翻译：一个实例中的装置包括基于锑化物的化合物半导体（ABCS）堆叠，形成在ABCS堆叠上的上阻挡层和形成在上阻挡层上的栅极堆叠。上阻挡层包括铟，铝和砷。栅堆叠包括形成在上阻挡层上的钛和钨的基层。

3. 发明授权

US07388235B2 High electron mobility transistors with Sb-based channels 有权
标题翻译：具有Sb基通道的高电子迁移率晶体管
公开(公告)号：US07388235B2
公开(公告)日：2008-06-17
申请号：US11239431
申请日：2005-09-20
申请人： John Bradley Boos , Brian R Bennett , Richard Magno , Nicholas A Papanicolou , Brad P. Tinkham
发明人： John Bradley Boos , Brian R Bennett , Richard Magno , Nicholas A Papanicolou , Brad P. Tinkham
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/7783
摘要： This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1-y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1-y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.
摘要翻译：本发明涉及一种电子器件，其包含半绝缘衬底，设置在所述衬底上的锑基材料的缓冲层，InAs Sb 3 Sb 1-y的沟道层，设置在所述缓冲层上的SUB>材料，设置在所述沟道层上的锑基阻挡层，以及设置在所述缓冲层上的InAsSb 1-y材料的覆盖层在所述阻挡层上，其中所述器件可以具有大约500GHz的频率和降低的功率耗散。

4. 发明申请

US20140264278A1 Strained InGaAs Quantum Wells for Complementary Transistors 有权
标题翻译：应变InGaAs量子阱互补晶体管
公开(公告)号：US20140264278A1
公开(公告)日：2014-09-18
申请号：US14156592
申请日：2014-01-16
申请人： Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
发明人： Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
IPC分类号： H01L29/15 , H01L29/778
CPC分类号： H01L29/7783 , B82Y10/00 , H01L27/092 , H01L29/1079 , H01L29/151 , H01L29/20 , H01L29/365 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L31/035236
摘要： An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
摘要翻译：用于具有Sb基p沟道的互补晶体管的InGaAs n沟道量子阱异质结构。异质结构包括具有中间至n沟道材料和p沟道材料的晶格常数的缓冲层，并被构造成适应由n沟道和p沟道材料之间的晶格常数失配产生的应变。

5. 发明申请

US20090302352A1 P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies 有权
标题翻译： P-N结，用于从GHZ到THZ频率的RF混频器
公开(公告)号：US20090302352A1
公开(公告)日：2009-12-10
申请号：US12476298
申请日：2009-06-02
申请人： Richard Magno , Mario Ancona , John Bradley Boos , James G. Champlain , Harvey S. Newman
发明人： Richard Magno , Mario Ancona , John Bradley Boos , James G. Champlain , Harvey S. Newman
IPC分类号： H01L29/207 , H01L21/203
CPC分类号： H01L29/205 , H01L21/02398 , H01L21/02466 , H01L21/02505 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02631 , H01L29/201 , H01L29/207 , H01L29/861
摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.
摘要翻译：本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。该器件由固体源分子束外延生长的窄带隙半导体组成。该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。

6. 发明申请

US20150014745A1 Strained InGaAs Quantum Wells for Complementary Transistors 有权
标题翻译：应变InGaAs量子阱互补晶体管
公开(公告)号：US20150014745A1
公开(公告)日：2015-01-15
申请号：US14504559
申请日：2014-10-02
申请人： Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
发明人： Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
IPC分类号： H01L29/778 , H01L27/092
CPC分类号： H01L29/7783 , B82Y10/00 , H01L27/092 , H01L29/1079 , H01L29/151 , H01L29/20 , H01L29/365 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L31/035236
摘要： An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
摘要翻译：用于具有Sb基p沟道的互补晶体管的InGaAs n沟道量子阱异质结构。异质结构包括具有中间至n沟道材料和p沟道材料的晶格常数的缓冲层，并被构造成适应由n沟道和p沟道材料之间的晶格常数失配产生的应变。

7. 发明授权

US08421121B2 Antimonide-based compound semiconductor with titanium tungsten stack 有权
公开(公告)号：US08421121B2
公开(公告)日：2013-04-16
申请号：US11788145
申请日：2007-04-18
申请人： Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
发明人： Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
IPC分类号： H01L29/778
CPC分类号： H01L29/66431 , H01L29/7783
摘要： An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

8. 发明授权

US08076700B2 P-N junction for use as an RF mixer from GHZ to THZ frequencies 有权
标题翻译： P-N结用于从GHZ到THZ频率的RF混频器
公开(公告)号：US08076700B2
公开(公告)日：2011-12-13
申请号：US12476298
申请日：2009-06-02
申请人： Richard Magno , Mario Ancona , John Bradley Boos , James G Champlain , Harvey S Newman
发明人： Richard Magno , Mario Ancona , John Bradley Boos , James G Champlain , Harvey S Newman
IPC分类号： H01L29/207 , H01L21/203
CPC分类号： H01L29/205 , H01L21/02398 , H01L21/02466 , H01L21/02505 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02631 , H01L29/201 , H01L29/207 , H01L29/861
摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.
摘要翻译：本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。该器件由固体源分子束外延生长的窄带隙半导体组成。该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。

9. 发明授权

US06316124B1 Modified InAs hall elements 失效
标题翻译：修改的InAs大厅元素
公开(公告)号：US06316124B1
公开(公告)日：2001-11-13
申请号：US09482053
申请日：2000-01-13
申请人： John Bradley Boos , Walter Kruppa , Brian R. Bennett , Ming-Jey Yang
发明人： John Bradley Boos , Walter Kruppa , Brian R. Bennett , Ming-Jey Yang
IPC分类号： B32B1500
CPC分类号： B32B15/01 , Y10T428/12528 , Y10T428/12681 , Y10T428/12736 , Y10T428/2495
摘要： This invention pertains to more sensitive and more stable electronic devices which can sense electrical and magnetic fields. The devices are characterized by InAs channels confined on both sides thereof by a wide band gap AlSb material; protective layers above the AlSb material; modulation doping above the AlSb material; and layers of the InAs channel material containing 1 to 99 mol percent antimony, with the channel material being deposited in the form of alternating monolayers of InSb and InAs, of a ternary mixture of InAsSb.
摘要翻译：本发明涉及可感测电场和磁场的更敏感和更稳定的电子装置。这些器件的特征在于通过宽带隙AlSb材料限制在其两侧的InAs通道; AlSb材料上方的保护层; AlSb材料上的调制掺杂; 和含有1至99mol％锑的InAs通道材料的层，其中通道材料以InAsb的三元混合物的InSb和InAs的交替单层形式沉积。

10. 发明授权

US5798540A Electronic devices with InAlAsSb/AlSb barrier 失效
标题翻译：具有InAlAsSb / AlSb屏障的电子设备
公开(公告)号：US5798540A
公开(公告)日：1998-08-25
申请号：US848203
申请日：1997-04-29
申请人： John Bradley Boos , Walter Kruppa , Doewon Park , Brian R. Bennett
发明人： John Bradley Boos , Walter Kruppa , Doewon Park , Brian R. Bennett
IPC分类号： H01L21/308 , H01L21/338 , H01L29/201 , H01L29/205 , H01L29/778 , H01L29/812 , H01L29/00
CPC分类号： H01L29/205 , H01L29/201 , H01L29/7783
摘要： An electronic device characterized by a GaAs substrate and a base disposed n the substrate, the base comprising InAs channel layer, AlSb layer above the channel layer, In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y layer containing at least In, Al, and As disposed above the AlSb channel layer, InAs cap layer disposed above and in contact with the In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y layer disposed below the InAs channel layer and in contact with the substrate, p.sup.+ GaSb layer disposed within the AlSb layer, Schottky gate with a pad disposed on and in contact with the In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y layer, at least one ohmic contact disposed on the InAs cap layer, and a trench extending through the base to the substrate isolating the gate bonding pad from the device and providing a gate air bridge which prevents contact between the gate and the InAs layer. The gate air bridge fabrication is accomplished by a liquid etchant containing more than half, on volume basis, of concentrated lactic acid or acetic acid with remainder hydrogen peroxide and concentrated hydrofluoric acid. The etchant attacks InAs, In.sub.x Al.sub.1-x As.sub.y Sb.sub.1-y, AlSb, and GaSb but does not attack GaAs and Au-based alloys.
摘要翻译：一种电子器件，其特征在于具有GaAs衬底和设置在衬底上的基极，所述基底包括InAs沟道层，在沟道层上方的AlSb层，InxAl1-xAsySb1-y层至少包含位于AlSb沟道上方的In，Al和As 层InAs覆盖层设置在InAs1沟道层下方并与衬底接触的In x Al 1-x As y Sb 1-y层上方并与之接触，设置在AlSb层内的p + GaSb层，具有布置在并且接触的焊盘的肖特基栅极与InxAl1-xAsySb1-y层，设置在InAs覆盖层上的至少一个欧姆接触，以及延伸穿过基底到衬底的沟槽，将栅极焊盘与器件隔离，并提供栅极空气桥，门和InAs层。门空气桥的制造是通过液体蚀刻剂来实现的，该液体蚀刻剂含有一半以上的体积基础上的浓缩乳酸或乙酸，剩余的是过氧化氢和浓缩的氢氟酸。蚀刻剂攻击InAs，InxAl1-xAsySb1-y，AlSb和GaSb，但不会侵蚀GaAs和Au基合金。

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