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1. 发明授权

US08877591B2 Methods of manufacturing vertical structure nonvolatile memory devices 有权
标题翻译：制造垂直结构非易失性存储器件的方法
公开(公告)号：US08877591B2
公开(公告)日：2014-11-04
申请号：US14092191
申请日：2013-11-27
申请人： Byeong-in Choe , Sung-il Chang , Chang-seok Kang , Jin-soo Lim
发明人： Byeong-in Choe , Sung-il Chang , Chang-seok Kang , Jin-soo Lim
IPC分类号： H01L21/336 , H01L29/78 , G11C16/04 , H01L29/66 , H01L29/792 , H01L27/115 , H01L29/788
CPC分类号： H01L29/66666 , G11C16/0466 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7827 , H01L29/7889 , H01L29/7926
摘要： A vertical structure nonvolatile memory device can include a channel layer that extends in a vertical direction on a substrate. A memory cell string includes a plurality of transistors that are disposed on the substrate in the vertical direction along a vertical sidewall of the channel layer. At least one of the plurality of transistors includes at least one recess in a gate of the transistor into which at least one protrusion, which includes the channel layer, extends.
摘要翻译：垂直结构的非易失性存储器件可以包括在衬底上沿垂直方向延伸的沟道层。存储单元串包括沿着沟道层的垂直侧壁在垂直方向上设置在基板上的多个晶体管。多个晶体管中的至少一个晶体管包括在晶体管的栅极中的至少一个凹部，至少一个包括沟道层的突起延伸到该凹槽中。

2. 发明授权

US08872183B2 Three-dimensional semiconductor devices 有权
标题翻译：三维半导体器件
公开(公告)号：US08872183B2
公开(公告)日：2014-10-28
申请号：US13366057
申请日：2012-02-03
申请人： Sung-Il Chang , Changhyun Lee , Byoungkeun Son , Jin-Soo Lim
发明人： Sung-Il Chang , Changhyun Lee , Byoungkeun Son , Jin-Soo Lim
IPC分类号： H01L29/04 , H01L21/822 , H01L27/115 , H01L27/06
CPC分类号： H01L27/11582 , H01L21/02532 , H01L21/02595 , H01L21/31111 , H01L21/8221 , H01L27/0688 , H01L27/11556 , H01L29/4232 , H01L29/42372
摘要： Three-dimensional semiconductor devices are provided. The three-dimensional semiconductor device includes a substrate, a buffer layer on the substrate. The buffer layer includes a material having an etching selectivity relative to that of the substrate. A multi-layer stack including alternating insulation patterns and conductive patterns is provided on the buffer layer opposite the substrate. One or more active patterns respectively extend through the alternating insulation patterns and conductive patterns of the multi-layer stack and into the buffer layer. Related fabrication methods are also discussed.
摘要翻译：提供三维半导体器件。三维半导体器件包括衬底，衬底上的缓冲层。缓冲层包括具有相对于衬底的蚀刻选择性的材料。在与衬底相对的缓冲层上提供包括交替绝缘图案和导电图案的多层堆叠。一个或多个有源图案分别延伸穿过多层堆叠的交替绝缘图案和导电图案并进入缓冲层。还讨论了相关的制造方法。

3. 发明授权

US08809943B2 Three dimensional semiconductor memory devices and methods of fabricating the same 有权
标题翻译：三维半导体存储器件及其制造方法
公开(公告)号：US08809943B2
公开(公告)日：2014-08-19
申请号：US13456552
申请日：2012-04-26
申请人： Jin-Soo Lim , Vladimir Urazaev , Jin Ha Jeong , Hansoo Kim , Heayun Lee
发明人： Jin-Soo Lim , Vladimir Urazaev , Jin Ha Jeong , Hansoo Kim , Heayun Lee
IPC分类号： H01L29/66
CPC分类号： H01L27/0688 , H01L27/11582 , H01L29/7926
摘要： A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.
摘要翻译：三维半导体存储器件包括具有交替层叠在基板上的多个导电电极图案和绝缘图案的电极结构。电极结构的相对侧壁包括各自的凹槽，其沿基本上垂直于衬底的方向延伸。第一和第二有源图案从基板突出并分别在电极结构的相对侧壁中的槽内延伸。相应的数据存储层在电极结构的导电电极图案和与其相邻的第一和第二活动图案的侧壁之间的凹槽中延伸。还讨论了相关的制造方法。

4. 发明申请

US20120058629A1 METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DEVICES 有权
标题翻译：制造垂直半导体器件的方法
公开(公告)号：US20120058629A1
公开(公告)日：2012-03-08
申请号：US13212485
申请日：2011-08-18
申请人： Byung-Kwan You , Kwang-Soo Seol , Young-Woo Park , Jin-Soo Lim
发明人： Byung-Kwan You , Kwang-Soo Seol , Young-Woo Park , Jin-Soo Lim
IPC分类号： H01L21/28 , H01L21/20
CPC分类号： H01L21/28282 , H01L21/02104 , H01L27/11582 , H01L29/7926
摘要： Methods of manufacturing vertical semiconductor devices may include forming a mold structure including sacrificial layers and insulating interlayers with a first opening formed therethrough. The sacrificial layers and the insulating interlayers may be stacked repeatedly and alternately on a substrate. The first opening may expose the substrate. Blocking layers may be formed by oxidizing portions of the sacrificial layers exposed by the first opening. A first semiconductor layer pattern, a charge trapping layer pattern and a tunnel insulation layer pattern, respectively, may be formed on the sidewall of the first opening. A second semiconductor layer may be formed on the first polysilicon layer pattern and the bottom of the first opening. The sacrificial layers and the insulating interlayers may be partially removed to form a second opening. The sacrificial layers may be removed to form grooves between the insulating interlayers. Control gate electrodes may be formed in the grooves.
摘要翻译：制造垂直半导体器件的方法可以包括形成包括牺牲层和绝缘夹层的模具结构，其中形成有第一开口。牺牲层和绝缘夹层可以重复地和交替地层叠在基板上。第一开口可能暴露基板。可以通过氧化由第一开口暴露的牺牲层的部分来形成阻挡层。分别可以在第一开口的侧壁上形成第一半导体层图案，电荷俘获层图案和隧道绝缘层图案。可以在第一多晶硅层图案和第一开口的底部上形成第二半导体层。可以部分去除牺牲层和绝缘夹层以形成第二开口。可以去除牺牲层以在绝缘夹层之间形成凹槽。控制栅电极可以形成在凹槽中。

5. 发明申请

US20100109065A1 THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES HAVING SUB-DIVIDED ACTIVE BARS AND METHODS OF MANUFACTURING SUCH DEVICES 有权
标题翻译：具有分包活性棒的三维非易失性存储器件及其制造方法
公开(公告)号：US20100109065A1
公开(公告)日：2010-05-06
申请号：US12612125
申请日：2009-11-04
申请人： Jin-Yong Oh , Woonkyung Lee , Jin-Sung Lee , Sunil Shim , Hansoo Kim , Wonseok Cho , Jaehoon Jang , Jin-Soo Lim
发明人： Jin-Yong Oh , Woonkyung Lee , Jin-Sung Lee , Sunil Shim , Hansoo Kim , Wonseok Cho , Jaehoon Jang , Jin-Soo Lim
IPC分类号： H01L27/115
CPC分类号： H01L27/11578 , H01L27/0688 , H01L27/11565 , H01L27/11582
摘要： Nonvolatile memory devices are provided and methods of manufacturing such devices. In the method, conductive layers and insulating layers are alternatingly stacked on a substrate. A first sub-active bar is formed which penetrates a first subset of the conductive layers and a first subset of the insulating layers. The first sub-active bar is electrically connected with the substrate. A second sub-active bar is formed which penetrates a second subset of the conductive layers and a second subset of the insulating layers. The second sub-active bar is electrically connected to the first sub-active bar. A width of a bottom portion of the second sub-active bar is less than a width of a top portion of the second sub-active bar.
摘要翻译：提供非易失性存储器件和制造这种器件的方法。在该方法中，导电层和绝缘层交替堆叠在基板上。形成第一子活动杆，其穿过导电层的第一子集和绝缘层的第一子集。第一子活性棒与衬底电连接。形成第二子活动杆，其穿透导电层的第二子集和绝缘层的第二子集。第二子活动杆电连接到第一子活动杆。第二副活性杆的底部的宽度小于第二副活性杆的顶部的宽度。

6. 发明申请

US20090306395A1 METALLIC COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING THE SAME 有权
标题翻译：金属化合物和包含该金属化合物的有机电致发光器件
公开(公告)号：US20090306395A1
公开(公告)日：2009-12-10
申请号：US11913192
申请日：2007-01-08
申请人： Dong-Hack Suh , Jin-Sik Choi , Jin-Soo Lim , Song-Ho Kim , Chi-Hun Kim
发明人： Dong-Hack Suh , Jin-Sik Choi , Jin-Soo Lim , Song-Ho Kim , Chi-Hun Kim
IPC分类号： C07F15/00
CPC分类号： H05B33/10 , C07F15/004 , C09K11/06 , C09K2211/1007 , C09K2211/1029 , C09K2211/1033 , C09K2211/1044 , C09K2211/1059 , C09K2211/1096 , H01L51/0085 , H01L51/009
摘要： The present invention relates to a light emitting transition metal compound of Chemical Formula 1 and an organic electroluminescence device including the compound.In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, m is 2 or 3, n is 0 or 1, the sum of m and n is 3, provided that the sum of m and n is 2 M is Pt. X is a N or P atom, and Y is S, O, or Se.
摘要翻译：本发明涉及化学式1的发光过渡金属化合物和包含该化合物的有机电致发光器件。在化学式1中，M选自Ir，Pt，Rh，Re和Os，m为2或3，n为0或1，m和n之和为3，条件是m和n之和是2 M是Pt。 X是N或P原子，Y是S，O或Se。

7. 发明授权

US07571155B2 System and method for generating a search result list 有权
标题翻译：用于生成搜索结果列表的系统和方法
公开(公告)号：US07571155B2
公开(公告)日：2009-08-04
申请号：US10537935
申请日：2003-11-27
申请人： Kyung Lak Choi , Joon Hong , Woo Sung Lee , Sang Keun Lee , Jin Soo Lim
发明人： Kyung Lak Choi , Joon Hong , Woo Sung Lee , Sang Keun Lee , Jin Soo Lim
IPC分类号： G06F17/30 , G06F7/60
CPC分类号： G06Q10/10 , G06Q40/04 , Y10S707/99931 , Y10S707/99933
摘要： The present invention relates to a system and method for generating a search result list in response to a search request through a communication network. A method for generating a search list according to the present invention comprises the steps of selling keywords associated with predetermined search list order display methods through a tender, maintaining a database including a plurality of search list orders, receiving the search request from a searcher, identifying the search list orders associated with the keywords corresponding to the search request, and arranging at least a portion of the search list orders according to the predetermined search list order display methods. According to the present invention, a purchase competition for a particular keyword is mitigated and selling prices for keywords can be determined at a proper level.
摘要翻译：本发明涉及一种响应于通过通信网络的搜索请求产生搜索结果列表的系统和方法。根据本发明的用于生成搜索列表的方法包括以下步骤：通过招标销售与预定搜索列表顺序显示方法相关联的关键词，维护包括多个搜索列表顺序的数据库，从搜索者接收搜索请求，识别与与搜索请求对应的关键词相关联的搜索列表顺序，以及根据预定搜索列表顺序显示方法来排列搜索列表顺序的至少一部分。根据本发明，减轻了特定关键词的购买竞争，并且可以在适当的水平上确定关键字的销售价格。

8. 发明申请

US20080269484A1 Metallic Compound and Organic Electroluminescence Device Comprising the Same 有权
标题翻译：金属化合物及其组成的有机电致发光器件
公开(公告)号：US20080269484A1
公开(公告)日：2008-10-30
申请号：US11913196
申请日：2007-01-08
申请人： Dong-Hack Suh , Jin-Sik Choi , Jin-Soo Lim , Song-Ho Kim , Dae-Beom Kim
发明人： Dong-Hack Suh , Jin-Sik Choi , Jin-Soo Lim , Song-Ho Kim , Dae-Beom Kim
IPC分类号： C07F17/00
CPC分类号： H05B33/14 , C09K11/06 , C09K2211/185
摘要： The present invention relates to a light emitting metallic compound of Chemical Formula 1 and an organic electroluminescence device including the compound. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, and m is 2, provided that m is 1 when M is Pt.
摘要翻译：本发明涉及化学式1的发光金属化合物和包含该化合物的有机电致发光器件。在化学式1中，M选自Ir，Pt，Rh，Re和Os，m为2，条件是当M为Pt时m为1。

9. 发明授权

US5919400A Stabilized isothiazolone solution 失效
标题翻译：稳定的异噻唑酮溶液
公开(公告)号：US5919400A
公开(公告)日：1999-07-06
申请号：US942791
申请日：1997-10-02
申请人： Seung Hwan Kim , Jin Soo Lim , Jin Man Kim , Myung Ho Cho
发明人： Seung Hwan Kim , Jin Soo Lim , Jin Man Kim , Myung Ho Cho
IPC分类号： C07D275/02 , A01N43/80 , A61K31/00 , A61K31/425 , A61P31/00 , A61P31/04 , C07D275/03 , C09K15/30
CPC分类号： C07D275/03 , A01N43/80
摘要： This invention relates to a stabilized isothiazolone solution and more particularly, to a stabilized isothiazolone solution comprising isothiazolone expressed by the following formula (I), stabilizer expressed by the following formula (II), and organic solvent diffusing these compounds effectively: ##STR1## In these formulae, n, R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 have the same definitions as defined in the detailed description of this application, respectively.
摘要翻译：本发明涉及稳定化的异噻唑酮溶液，更具体地说，涉及由下式（I）表示的由异噻唑酮表示的稳定化的异噻唑酮溶液，由下式（II）表示的稳定剂和有效溶剂有效地扩散这些化合物：在这些式中， n，R1，R2，R3，R4和R5分别具有与本申请的详细描述中所定义的相同的定义。

10. 发明申请

US20130301350A1 Vertical Structure Nonvolatile Memory Device 审中-公开
标题翻译：垂直结构非易失性存储器件
公开(公告)号：US20130301350A1
公开(公告)日：2013-11-14
申请号：US13939912
申请日：2013-07-11
申请人： Byeong-In Choe , Sung-il Chang , Chang-seok Kang , Jin-soo Lim
发明人： Byeong-In Choe , Sung-il Chang , Chang-seok Kang , Jin-soo Lim
IPC分类号： H01L29/78 , G11C16/04
CPC分类号： H01L29/66666 , G11C16/0466 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7827 , H01L29/7889 , H01L29/7926
摘要： A vertical structure nonvolatile memory device can include a channel layer that extends in a vertical direction on a substrate. A memory cell string includes a plurality of transistors that are disposed on the substrate in the vertical direction along a vertical sidewall of the channel layer. At least one of the plurality of transistors includes at least one recess in a gate of the transistor into which at least one protrusion, which includes the channel layer, extends.
摘要翻译：垂直结构的非易失性存储器件可以包括在衬底上沿垂直方向延伸的沟道层。存储单元串包括沿着沟道层的垂直侧壁在垂直方向上设置在基板上的多个晶体管。多个晶体管中的至少一个晶体管包括在晶体管的栅极中的至少一个凹部，至少一个包括沟道层的突起延伸到该凹槽中。

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