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1. 发明授权

US09577115B2 Semiconductor devices having air gaps 有权
标题翻译：具有气隙的半导体器件
公开(公告)号：US09577115B2
公开(公告)日：2017-02-21
申请号：US13195347
申请日：2011-08-01
申请人： Byung-Kyu Cho , Chang-Hyun Lee , Young-Woo Park
发明人： Byung-Kyu Cho , Chang-Hyun Lee , Young-Woo Park
IPC分类号： H01L21/70 , H01L29/788 , H01L21/764 , H01L27/115 , H01L29/423
CPC分类号： H01L29/7881 , H01L21/764 , H01L27/11521 , H01L29/42336
摘要： A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein.
摘要翻译：半导体器件具有隔离层图案，多个栅极结构和第一绝缘层图案。隔离层图案形成在基板上并且在其上具有凹部。栅极结构在衬底和隔离层图案上彼此间隔开。第一绝缘层图案形成在基板上并且覆盖该凹槽的栅极结构和内壁。第一绝缘层图案中具有第一气隙。

2. 发明申请

US20150325588A1 SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件
公开(公告)号：US20150325588A1
公开(公告)日：2015-11-12
申请号：US14591929
申请日：2015-01-08
申请人： Jae-Duk LEE , Young-Woo PARK
发明人： Jae-Duk LEE , Young-Woo PARK
IPC分类号： H01L27/115
CPC分类号： H01L21/02636 , H01L21/28282 , H01L21/76895 , H01L23/528 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11582
摘要： A semiconductor device includes a lower insulation layer, a plurality of base layer patterns separated from each other on the lower insulation layer, a separation layer pattern between the base layer patterns, a plurality of channels extending in a vertical direction with respect to top surfaces of the base layer patterns, and a plurality of gate lines surrounding outer sidewalls of the channels, being stacked in the vertical direction and spaced apart from each other.
摘要翻译：半导体器件包括下绝缘层，在下绝缘层上彼此分离的多个基底层图案，在基底层图案之间的分离层图案，在垂直方向上延伸的多个通道相对于基底层图案和围绕通道的外侧壁的多条栅极线在垂直方向上堆叠并彼此间隔开。

3. 发明申请

US20150132915A1 Non-Volatile Memory Devices and Manufacturing Methods Thereof 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20150132915A1
公开(公告)日：2015-05-14
申请号：US14457220
申请日：2014-08-12
申请人： Jin Taek Park , Young Woo Park , Jae Duk Lee
发明人： Jin Taek Park , Young Woo Park , Jae Duk Lee
IPC分类号： H01L29/66 , H01L27/115
CPC分类号： H01L29/513 , G11C16/0483 , H01L21/28273 , H01L27/11556 , H01L27/11582 , H01L29/42324 , H01L29/4234 , H01L29/42364 , H01L29/4916 , H01L29/66825 , H01L29/66833 , H01L29/7789 , H01L29/7926
摘要： There is provided a method of manufacturing a non-volatile memory device including: alternatively stacking a plurality of insulating layers and a plurality of conductive layers on a top surface of a substrate; forming an opening that exposes the top surface of the substrate and lateral surfaces of the insulating layers and the conductive layers; forming an anti-oxidation layer on at least the exposed lateral surfaces of the conductive layers; forming a gate dielectric layer on the anti-oxidation layer, the gate dielectric layer including a blocking layer, an electric charge storage layer, and a tunneling layer that are sequentially formed on the anti-oxidation layer; and forming a channel region on the tunneling layer
摘要翻译：提供了一种制造非易失性存储器件的方法，包括：在衬底的顶表面上交替堆叠多个绝缘层和多个导电层; 形成露出所述基板的顶表面和所述绝缘层和所述导电层的侧表面的开口; 在所述导电层的至少暴露的侧表面上形成抗氧化层; 在所述抗氧化层上形成栅介电层，所述栅极介电层包括依次形成在所述抗氧化层上的阻挡层，电荷存储层和隧穿层; 以及在隧道层上形成沟道区

4. 发明申请

US20150060993A1 NONVOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICE, AND MEMORY MODULE AND SYSTEM INCLUDING THE NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件，非易失性存储器件的制造方法以及包含非易失性存储器件的存储器模块和系统
公开(公告)号：US20150060993A1
公开(公告)日：2015-03-05
申请号：US14529940
申请日：2014-10-31
申请人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
发明人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L29/66477 , H01L29/7926
摘要： A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.
摘要翻译：非易失性存储器件包括衬底，从衬底突出的沟道层，围绕沟道层的栅极导电层，设置在沟道层和栅极导电层之间的栅极绝缘层以及与沟道间隔开的第一绝缘层并设置在栅极导电层的顶部和底部。栅极绝缘层在栅极导电层和第一绝缘层之间延伸。

5. 发明授权

US08969947B2 Vertical memory devices with quantum-dot charge storage cells 有权
标题翻译：具有量子点电荷存储单元的垂直存储器件
公开(公告)号：US08969947B2
公开(公告)日：2015-03-03
申请号：US13042051
申请日：2011-03-07
申请人： Jae-goo Lee , Jung-dal Choi , Young-woo Park
发明人： Jae-goo Lee , Jung-dal Choi , Young-woo Park
IPC分类号： H01L29/788 , H01L21/28 , H01L29/66 , H01L29/423 , H01L29/792 , H01L27/115 , B82Y10/00
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/28282 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/11556 , H01L27/1157 , H01L27/11578 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/788 , H01L29/7881 , H01L29/792 , H01L29/7926
摘要： A memory device includes a substrate, a semiconductor column extending perpendicularly from the substrate and a plurality of spaced-apart charge storage cells disposed along a sidewall of the semiconductor column. Each of the storage cells includes a tunneling insulating layer disposed on the sidewall of the semiconductor column, a polymer layer disposed on the tunneling insulating layer, a plurality of quantum dots disposed on or in the polymer layer and a blocking insulating layer disposed on the polymer layer.
摘要翻译：存储器件包括衬底，从衬底垂直延伸的半导体柱和沿着半导体柱的侧壁设置的多个间隔开的电荷存储单元。每个存储单元包括设置在半导体柱的侧壁上的隧道绝缘层，设置在隧道绝缘层上的聚合物层，设置在聚合物层上或其中的多个量子点以及设置在聚合物上的阻挡绝缘层层。

6. 发明授权

US08877626B2 Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device 有权
标题翻译：非易失性存储器件，非易失性存储器件的制造方法以及包括非易失性存储器件的存储器模块和系统
公开(公告)号：US08877626B2
公开(公告)日：2014-11-04
申请号：US13896819
申请日：2013-05-17
申请人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
发明人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
IPC分类号： H01L21/3205 , H01L27/115 , H01L29/66 , H01L29/792
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L29/66477 , H01L29/7926
摘要： A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.
摘要翻译：非易失性存储器件包括衬底，从衬底突出的沟道层，围绕沟道层的栅极导电层，设置在沟道层和栅极导电层之间的栅极绝缘层以及与沟道间隔开的第一绝缘层并设置在栅极导电层的顶部和底部。栅极绝缘层在栅极导电层和第一绝缘层之间延伸。

7. 发明申请

US20140291869A1 ANISOTROPIC CONDUCTIVE FILM INCLUDING CONDUCTIVE ADHESIVE LAYER AND SEMICONDUCTOR DEVICE CONNECTED BY THE SAME 有权
标题翻译：包括导电粘合层和相关连接的半导体器件的各向异性导电膜
公开(公告)号：US20140291869A1
公开(公告)日：2014-10-02
申请号：US14229003
申请日：2014-03-28
申请人： Kyoung Soo PARK , Soon Young KWON , Ji Yeon KIM , Young Woo PARK , Jae Sun HAN , Ja Young HWANG
发明人： Kyoung Soo PARK , Soon Young KWON , Ji Yeon KIM , Young Woo PARK , Jae Sun HAN , Ja Young HWANG
IPC分类号： H01L23/00 , C09J9/02
CPC分类号： H01L24/29 , C08K7/16 , C08K9/02 , C09J7/00 , C09J7/10 , C09J9/02 , C09J11/00 , C09J2201/36 , C09J2201/602 , C09J2203/326 , C09J2205/102 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/13013 , H01L2224/16225 , H01L2224/27003 , H01L2224/271 , H01L2224/29082 , H01L2224/29083 , H01L2224/2919 , H01L2224/2929 , H01L2224/29311 , H01L2224/29316 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29366 , H01L2224/29371 , H01L2224/29387 , H01L2224/2939 , H01L2224/29411 , H01L2224/29416 , H01L2224/29424 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/29464 , H01L2224/29466 , H01L2224/29471 , H01L2224/29499 , H01L2224/32225 , H01L2224/81191 , H01L2224/81903 , H01L2224/83192 , H01L2224/83203 , H01L2224/83851 , H01L2924/07802 , H01L2924/15788 , H05K3/323 , Y10T428/24959 , Y10T428/25 , Y10T428/28 , Y10T428/2848 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×105/d2 to 10.0×105/d2 (particles) per square millimeter (mm2) (where d is a diameter of the conductive particles in μm).
摘要翻译：各向异性导电膜包括导电性粘合剂层，其包含导电性粒子和绝缘性粒子，以及不含导电性粒子的绝缘性粘合剂层。在各向异性导电膜中，导电性粘接剂层的导电性粒子和绝缘性粒子的总粒子密度为7.0×10 5 / d 2〜10 10×10 6（粒子）/平方毫米（mm 2）（d为直径的导电粒子）。

8. 发明申请

US20140289595A1 METHOD AND SYSTEM OF PERFORMING ELECTRONIC APPROVAL PROCESSES AND COMPUTER-READABLE STORAGE MEDIUM STORING ELECTRONIC APPROVAL PROGRAM 审中-公开
标题翻译：执行电子审批程序和计算机可读存储介质存储电子认证程序的方法和系统
公开(公告)号：US20140289595A1
公开(公告)日：2014-09-25
申请号：US14222220
申请日：2014-03-21
申请人： Young-Woo PARK , Dong-Keun KIM , Dong-Min JU
发明人： Young-Woo PARK , Dong-Keun KIM , Dong-Min JU
IPC分类号： G06F17/24
CPC分类号： G06F17/241 , G06F17/242 , G06F17/248 , G06Q30/018
摘要： A letter approval item including an approval document is created in an approval requester's PC and the approval document includes a signable region. An approval is requested by transmitting the letter approval item to a database server. A mobile-based approval item including the letter approval item is provided to a web/application server and then to an approver's mobile device when the approver's mobile device requests. The approval of the letter approval item is performed in the approver's mobile device in response to a direct signature of an approver. A signature image is created in the approver's mobile device by the direct signature of the approver. The signature image is transmitted to the web/application server and a final approval document is generated in the web/application server by inserting the signature image in the signable region of the approval document.
摘要翻译：在批准申请人的PC中创建包括批准文件的信件批准项目，并且批准文件包括可签署的区域。通过将信函批准项目发送到数据库服务器来请求批准。当批准者的移动设备请求时，将包含信件批准项目的基于移动的批准项目提供给网络/应用服务器，然后提供给批准者的移动设备。信件批准项目的批准是在审批人的移动设备中进行的，以响应审批人的直接签名。通过审批者的直接签名在批准人的移动设备中创建签名图像。签名图像被发送到web /应用服务器，并且通过将签名图像插入到批准文档的可签署区域中，在web /应用服务器中生成最终批准文档。

9. 发明授权

US08810932B2 Imaging lens system 有权
标题翻译：成像镜头系统
公开(公告)号：US08810932B2
公开(公告)日：2014-08-19
申请号：US13540839
申请日：2012-07-03
申请人： Young-woo Park
发明人： Young-woo Park
IPC分类号： G02B9/06 , G02B9/04
CPC分类号： G02B9/04 , G02B9/60 , G02B13/0045 , G02B13/006 , G02B13/18
摘要： An imaging lens system includes a first lens group having a positive refractive power and a second lens group having a positive refractive power, the first lens group and the second lens group are sequentially arranged from an object side to an image surface. The first lens group includes a first lens having a positive refractive power, a second lens having a positive refractive power, and a third lens having a negative refractive power and having a concave surface toward the image surface, which are sequentially arranged from the object side to the image surface. The second lens group includes a cemented lens of a fourth lens that has a concave surface toward the object side and is a negative lens and a fifth lens that is a positive lens, which are sequentially arranged from the object to the image surface.
摘要翻译：成像透镜系统包括具有正屈光力的第一透镜组和具有正屈光力的第二透镜组，第一透镜组和第二透镜组从物体侧依次排列到图像表面。第一透镜组包括具有正折光力的第一透镜，具有正折射光焦度的第二透镜和具有负折射光焦度并且具有朝向图像表面的凹面的第三透镜，它们从物体侧依次布置到图像表面。第二透镜组包括从物体到图像表面依次布置的具有朝向物体侧的凹面并且是负透镜和作为正透镜的第五透镜的第四透镜的胶合透镜。

10. 发明申请

US20140193431A1 ANTI-C-MET ANTIBODY HAVING HGF ACTIVITY AND USE THEREOF 有权
标题翻译：具有HGF活性的抗C-MET抗体及其用途
公开(公告)号：US20140193431A1
公开(公告)日：2014-07-10
申请号：US14123533
申请日：2012-06-04
申请人： Young Woo Park , KiWon Jo , Chan Woong Park , Seok Ho Yoo , Myeoung Hee Jang , Hye Nan Kim , Seon Ha Yun , Kyu Won Cho , Mi Ra Park
发明人： Young Woo Park , KiWon Jo , Chan Woong Park , Seok Ho Yoo , Myeoung Hee Jang , Hye Nan Kim , Seon Ha Yun , Kyu Won Cho , Mi Ra Park
IPC分类号： C07K16/28
CPC分类号： C07K16/2863 , A61K2039/505 , C07K2317/21 , C07K2317/622 , C07K2317/75 , C07K2317/92 , C07K2317/94
摘要： Disclosed are a human antibody comprising a human complementarity-determining region (CDR), which binds specifically to c-Met, and a framework region (FR), a polynucleotide encoding the human antibody, an expression vector comprising the polynucleotide, a transformant transformed with the expression vector, a method of producing the human antibody B7 by culturing the transformant, a wound healing composition comprising the human antibody as an active ingredient, a cell regeneration composition comprising the antibody as an active ingredient, and a drug conjugate comprising a drug linked to the human antibody. The c-Met-specific human antibody can function as an HGF mimic that can be used as a wound healing composition. The antibody can be widely used to determine the treatment and prognosis of various diseases, including neuronal infarction, progressive nephropathy, liver cirrhosis, lung fibrosis, kidney injury, liver injury, lung injury, and ulcerative wounds, which are treated by activation of HGF or c-Met.
摘要翻译：公开了包含与c-Met特异性结合的人互补决定区（CDR）的人抗体和框架区（FR），编码人抗体的多核苷酸，包含多核苷酸的表达载体，转化了表达载体，通过培养转化体生产人抗体B7的方法，包含人抗体作为活性成分的伤口愈合组合物，包含抗体作为活性成分的细胞再生组合物和包含药物连接的药物偶联物对人抗体。 c-Met特异性人抗体可用作可用作伤口愈合组合物的HGF模拟物。该抗体可广泛用于确定通过激活HGF或其他疾病治疗的各种疾病的治疗和预后，包括神经元梗死，进行性肾病，肝硬化，肺纤维化，肾损伤，肝损伤，肺损伤和溃疡性创伤 c-Met。

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