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1. 发明申请

US20100136792A1 SELF-ALIGNED MULTI-PATTERNING FOR ADVANCED CRITICAL DIMENSION CONTACTS 有权
标题翻译：用于高级关键尺寸联系人的自对准多模式
公开(公告)号：US20100136792A1
公开(公告)日：2010-06-03
申请号：US12603371
申请日：2009-10-21
申请人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
发明人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
IPC分类号： H01L21/30 , G03F7/20
CPC分类号： H01L21/0337
摘要： Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
摘要翻译：本发明的实施例涉及在使用单个高分辨率光掩模的标准光刻处理技术的可能性方面，在具有减小的间距的基板上形成图案化特征的方法。间隔层形成在芯的二维正方形网格上，其厚度被选择为在正方形的角上的四个芯的中心处留下凹坑。将间隔层回蚀刻以在正方形的中心露出基底。去除核心材料会导致光刻图形格网格的图案密度增加一倍。暴露的衬底的区域可以再次用芯材料填充，并且重复该过程以使图案密度增加四倍。

2. 发明授权

US08084310B2 Self-aligned multi-patterning for advanced critical dimension contacts 有权
标题翻译：用于高级关键尺寸触点的自对准多图案
公开(公告)号：US08084310B2
公开(公告)日：2011-12-27
申请号：US12603371
申请日：2009-10-21
申请人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
发明人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
IPC分类号： H01L21/00
CPC分类号： H01L21/0337
摘要： Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
摘要翻译：本发明的实施例涉及在使用单个高分辨率光掩模的标准光刻处理技术的可能性方面，在具有减小的间距的基板上形成图案化特征的方法。间隔层形成在芯的二维正方形网格上，其厚度被选择为在正方形的角上的四个芯的中心处留下凹坑。将间隔层回蚀刻以在正方形的中心露出基底。去除核心材料会导致光刻图形格网格的图案密度增加一倍。暴露的衬底的区域可以再次用芯材料填充，并且重复该过程以使图案密度增加四倍。

3. 发明授权

US07972959B2 Self aligned double patterning flow with non-sacrificial features 有权
标题翻译：具有非牺牲特征的自对准双图案流
公开(公告)号：US07972959B2
公开(公告)日：2011-07-05
申请号：US12326068
申请日：2008-12-01
申请人： Bencherki Mebarki , Li Yan Miao , Kenlin C. Huang
发明人： Bencherki Mebarki , Li Yan Miao , Kenlin C. Huang
IPC分类号： H01L21/44
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/76837 , H01L21/76885
摘要： Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned double patterning (SADP) process. A conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask. An anisotropic etch of the non-sacrificial layer leaves non-sacrificial ribs above a substrate. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features. No hard mask is needed to form the non-sacrificial ribs, reducing the number of processing steps involved.
摘要翻译：本发明的实施例涉及使用自对准双图案化（SADP）工艺在衬底上形成特征的方法。在使用高分辨率光掩模的光刻系统的光学分辨率附近图案化的牺牲结构材料的特征上形成非牺牲材料的共形层。非牺牲层的各向异性蚀刻在衬底上留下非牺牲肋。可以将沉积在其上的间隙填充层进行蚀刻或抛光以形成交替的填充和非牺牲特征。不需要硬掩模来形成非牺牲肋，减少了所涉及的处理步骤的数量。

4. 发明申请

US20100136784A1 SELF ALIGNED DOUBLE PATTERNING FLOW WITH NON-SACRIFICIAL FEATURES 有权
标题翻译：自定义双向图案非极性特征
公开(公告)号：US20100136784A1
公开(公告)日：2010-06-03
申请号：US12326068
申请日：2008-12-01
申请人： Bencherki Mebarki , Li Yan Miao , Kenlin C. Huang
发明人： Bencherki Mebarki , Li Yan Miao , Kenlin C. Huang
IPC分类号： H01L21/44
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/76837 , H01L21/76885
摘要： Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned double patterning (SADP) process. A conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask. An anisotropic etch of the non-sacrificial layer leaves non-sacrificial ribs above a substrate. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features. No hard mask is needed to form the non-sacrificial ribs, reducing the number of processing steps involved.
摘要翻译：本发明的实施例涉及使用自对准双图案化（SADP）工艺在衬底上形成特征的方法。在使用高分辨率光掩模的光刻系统的光学分辨率附近图案化的牺牲结构材料的特征上形成非牺牲材料的共形层。非牺牲层的各向异性蚀刻在衬底上留下非牺牲肋。可以将沉积在其上的间隙填充层进行蚀刻或抛光以形成交替的填充和非牺牲特征。不需要硬掩模来形成非牺牲肋，减少了所涉及的处理步骤的数量。

5. 发明授权

US08357618B2 Frequency doubling using a photo-resist template mask 失效
标题翻译：使用光刻胶模板掩模倍频
公开(公告)号：US08357618B2
公开(公告)日：2013-01-22
申请号：US12257953
申请日：2008-10-24
申请人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
发明人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , H01L21/0337 , H01L21/0338
摘要： A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
摘要翻译：描述了使用光致抗蚀剂模板掩模使光刻工艺的频率加倍的方法。首先提供其上形成有光致抗蚀剂层的器件层。将光致抗蚀剂层图案化以形成光致抗蚀剂模板掩模。在光致抗蚀剂模板掩模上沉积间隔物形成材料层。蚀刻间隔物形成材料层以形成间隔物掩模并露出光刻胶模板掩模。然后去除光刻胶模板掩模，并且最终将间隔掩模的图像转移到器件层。

6. 发明申请

US20090111281A1 FREQUENCY DOUBLING USING A PHOTO-RESIST TEMPLATE MASK 失效
标题翻译：使用光敏模式屏幕进行频率重复
公开(公告)号：US20090111281A1
公开(公告)日：2009-04-30
申请号：US12257953
申请日：2008-10-24
申请人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
发明人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , H01L21/0337 , H01L21/0338
摘要： A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
摘要翻译：描述了使用光致抗蚀剂模板掩模使光刻工艺的频率加倍的方法。首先提供其上形成有光致抗蚀剂层的器件层。将光致抗蚀剂层图案化以形成光致抗蚀剂模板掩模。在光致抗蚀剂模板掩模上沉积间隔物形成材料层。蚀刻间隔物形成材料层以形成间隔物掩模并露出光刻胶模板掩模。然后去除光刻胶模板掩模，并且最终将间隔掩模的图像转移到器件层。

7. 发明授权

US08148269B2 Boron nitride and boron-nitride derived materials deposition method 有权
标题翻译：氮化硼和氮化硼衍生材料的沉积方法
公开(公告)号：US08148269B2
公开(公告)日：2012-04-03
申请号：US12415759
申请日：2009-03-31
申请人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
发明人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144 , H01L21/3086 , H01L21/3105 , H01L21/31111 , H01L21/31122 , H01L21/318 , H01L21/76832 , H01L29/4966
摘要： A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.
摘要翻译：提供了一种形成邻近衬底结构的间隔物材料的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括将具有邻近衬底表面的衬底结构的衬底放置在沉积室中，在衬底结构和衬底表面上沉积间隔层，以及蚀刻间隔层以暴露衬底结构和衬底表面的一部分，其中间隔层邻近衬底结构设置。间隔层可以包括氮化硼材料。间隔层可以包括基底间隔层和衬垫层，并且可以在两步蚀刻工艺中蚀刻间隔层。

8. 发明申请

US20090263972A1 BORON NITRIDE AND BORON-NITRIDE DERIVED MATERIALS DEPOSITION METHOD 有权
标题翻译：硼硝酸盐和硼 - 硼衍生物质沉积方法
公开(公告)号：US20090263972A1
公开(公告)日：2009-10-22
申请号：US12415759
申请日：2009-03-31
申请人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
发明人： Mihaela Balseanu , Christopher D. Bencher , Yongmei Chen , Li Yan Miao , Victor Nguyen , Isabelita Roflox , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/3086 , H01L21/3105 , H01L21/31111 , H01L21/31122 , H01L21/318 , H01L21/76832 , H01L29/4966
摘要： A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.
摘要翻译：提供了一种形成邻近衬底结构的间隔物材料的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括将具有邻近衬底表面的衬底结构的衬底放置在沉积室中，在衬底结构和衬底表面上沉积间隔层，以及蚀刻间隔层以暴露衬底结构和衬底表面的一部分，其中间隔层邻近衬底结构设置。间隔层可以包括氮化硼材料。间隔层可以包括基底间隔层和衬垫层，并且可以在两步蚀刻工艺中蚀刻间隔层。

9. 发明申请

US20120208374A1 AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY 有权
标题翻译：用于改善堆积缺陷的非晶碳沉积方法
公开(公告)号：US20120208374A1
公开(公告)日：2012-08-16
申请号：US13455916
申请日：2012-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/312
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施方案中，提供了形成复合无定形碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中，用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

10. 发明授权

US08349741B2 Amorphous carbon deposition method for improved stack defectivity 有权
标题翻译：无定形碳沉积方法，提高了堆叠缺陷率
公开(公告)号：US08349741B2
公开(公告)日：2013-01-08
申请号：US13455916
申请日：2012-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/308 , H01L21/32
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施方案中，提供了形成复合无定形碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中，用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

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