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1. 发明授权

US06433575B1 Check abnormal contact and via holes by electroplating method 有权
公开(公告)号：US06433575B1
公开(公告)日：2002-08-13
申请号：US09804387
申请日：2001-03-13
申请人： Ming-Chun Chou , Huai-Jen Shu
发明人： Ming-Chun Chou , Huai-Jen Shu
IPC分类号： G01R3126
摘要： A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO4—H2O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO4 solution and forms Cu2+ ions. These Cu2+ ions will diffuse to the wafer surface. Most of the Cu2+ ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

2. 发明授权

US06261852B1 Check abnormal contact and via holes by electroplating method 有权
公开(公告)号：US06261852B1
公开(公告)日：2001-07-17
申请号：US09294052
申请日：1999-04-19
申请人： Ming-Chun Chou , Huai-Jen Shu
发明人： Ming-Chun Chou , Huai-Jen Shu
IPC分类号： G01R3126
CPC分类号： H01L22/24 , H01L2924/0002 , H01L2924/00
摘要： A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO4—H2O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO4 solution and forms Cu2+ ions. These Cu2+ ions will diffuse to the wafer surface. Most of the Cu2+ ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

3. 发明授权

US5865900A Etch method for removing metal-fluoropolymer residues 失效
标题翻译：用于去除金属 - 含氟聚合物残留物的蚀刻方法
公开(公告)号：US5865900A
公开(公告)日：1999-02-02
申请号：US725805
申请日：1996-10-04
申请人： Chiarn-Lung Lee , Huai-Jen Shu , Ying-Tzu Yen
发明人： Chiarn-Lung Lee , Huai-Jen Shu , Ying-Tzu Yen
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/3065 , C23G1/02 , H01L21/306
CPC分类号： H01L21/02071 , Y10S438/906
摘要： A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.
摘要翻译：一种从集成电路内的集成电路结构去除金属 - 含氟聚合物残留物的方法。首先提供了在其中形成有金属 - 含氟聚合物残留物的集成电路。金属 - 含氟聚合物残留物是通过在集成电路内的导体金属层存在下使用含有碳氟化合物的蚀刻剂气体组成的第一等离子体蚀刻方法形成的。然后将金属 - 含氟聚合物残余物暴露于使用含氯蚀刻剂气体组合物的第二等离子体蚀刻方法，从金属 - 含氟聚合物残余物形成含氯等离子体处理的金属 - 含氟聚合物残余物。最后，通过依次使用酸水溶液和有机溶剂的汽提方法从集成电路中除去含氯等离子体处理的金属 - 氟聚合物残余物。

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