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1. 发明授权

US08884515B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08884515B2
公开(公告)日：2014-11-11
申请号：US12405502
申请日：2009-03-17
申请人： Seung-Wook Chang , Hye-Dong Kim , Mu-Hyun Kim
发明人： Seung-Wook Chang , Hye-Dong Kim , Mu-Hyun Kim
IPC分类号： H01J1/62 , H01J63/04 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5253 , H01L27/32 , H01L27/3246 , H01L51/52 , H01L51/5218 , H01L51/5246 , H01L51/525 , H01L51/5271
摘要： An organic light emitting display apparatus that includes a substrate, an organic light emitting unit formed on the substrate, a reflection member disposed on a non-light emitting region of the organic light emitting unit, and a sealing member that seals the organic light emitting unit. The organic light emitting display apparatus can function as a display apparatus or a mirror.
摘要翻译：一种有机发光显示装置，包括基板，形成在基板上的有机发光单元，设置在有机发光单元的非发光区域上的反射构件，以及密封构件，其密封有机发光单元。有机发光显示装置可以用作显示装置或反射镜。

2. 发明申请

US20130270526A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS 有权
标题翻译：有机发光显示装置及制造有机发光显示装置的方法
公开(公告)号：US20130270526A1
公开(公告)日：2013-10-17
申请号：US13649724
申请日：2012-10-11
申请人： Sung-Ho KIM , Jong-Moo HUH , Hye-Dong KIM
发明人： Sung-Ho KIM , Jong-Moo HUH , Hye-Dong KIM
IPC分类号： H01L51/52
CPC分类号： H01L27/1218 , H01L27/1255 , H01L27/3265 , H01L51/5271
摘要： An organic light-emitting display apparatus includes a substrate, a plurality of organic light-emitting diodes on the substrate, and a plurality of capacitors located next to at least one side of one of the organic light-emitting diodes. The capacitors are arranged inside trenches within the substrate.
摘要翻译：有机发光显示装置包括基板，基板上的多个有机发光二极管和位于有机发光二极管之一的至少一侧的多个电容器。电容器布置在衬底内的沟槽内。

3. 发明授权

US07973315B2 Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor 有权
标题翻译：薄膜晶体管，平板显示装置及其制造薄膜晶体管的方法
公开(公告)号：US07973315B2
公开(公告)日：2011-07-05
申请号：US11167157
申请日：2005-06-28
申请人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
发明人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78606
摘要： A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.
摘要翻译：一种由于热或机械应力而不会变形或剥落的薄膜晶体管，具有该薄膜晶体管的平板显示器及其制造方法，所述薄膜晶体管包括基板，设置在基板上的图案化缓冲层，设置在缓冲层上的图案化有源层，与有源层绝缘的栅极电极以及与有源层接触并与栅电极绝缘的源电极和漏电极。

4. 发明申请

US20100201664A1 PHOTOSENSOR, PHOTOSENSOR APPARATUS INCLUDING THE PHOTOSENSOR, AND DISPLAY APPARATUS INCLUDING THE PHOTOSENSOR APPARATUS 有权
标题翻译：光电传感器，包括光电传感器的光电设备，以及包括摄影机设备的显示设备
公开(公告)号：US20100201664A1
公开(公告)日：2010-08-12
申请号：US12693218
申请日：2010-01-25
申请人： Moon-Jae Lee , Won-Jun Song , Sun-Hee Lee , Young-Hee Lee , Mu-Hyun Kim , Hye-Dong Kim
发明人： Moon-Jae Lee , Won-Jun Song , Sun-Hee Lee , Young-Hee Lee , Mu-Hyun Kim , Hye-Dong Kim
IPC分类号： G09G5/00 , H01L51/46 , H01L31/0296
CPC分类号： H01L27/305 , B82Y10/00 , H01L27/283 , H01L27/288 , H01L27/3269 , H01L51/0046 , H01L51/0078 , H01L51/0541 , H01L51/0545 , H01L51/422 , Y02E10/549
摘要： Provided are a photosensor, a photosensor apparatus including the photosensor, and a display apparatus including the photosensor apparatus. The photosensor includes a substrate; a first light receiving layer which is formed on the substrate and comprises an oxide; a second light receiving layer which is connected to the first light receiving layer and comprises an organic material; and first and second electrodes which are respectively connected to the first and second light receiving layers.
摘要翻译：提供了一种光电传感器，包括光电传感器的光传感器装置和包括光电传感器装置的显示装置。光传感器包括基板; 第一光接收层，其形成在所述基板上并且包括氧化物; 第二光接收层，其连接到第一光接收层并且包括有机材料; 以及分别连接到第一和第二光接收层的第一和第二电极。

5. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

6. 发明申请

US20080176349A1 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 有权
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US20080176349A1
公开(公告)日：2008-07-24
申请号：US12004404
申请日：2007-12-21
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/36 , H01L51/56
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

7. 发明授权

US07381579B2 Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet 有权
标题翻译：供体片，其制造方法，使用供体片的TFT的制造方法以及使用供体片的平板显示装置的制造方法
公开(公告)号：US07381579B2
公开(公告)日：2008-06-03
申请号：US10995514
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/00
CPC分类号： B41M5/38207 , B41M5/395 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/04 , H01L29/78681 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369 , Y10S977/773 , Y10T428/31504
摘要： A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film transistor (TFT) using the donor sheet, and a method of manufacturing a flat panel display device using the donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The donor sheet can be manufactured at room temperature. The donor sheet has a base film, and a transfer layer being disposed at one side of the base film and transferable, wherein the transfer layer has a plurality of nanoparticles which are arranged to be approximately parallel to one another.
摘要翻译：一种柔性平板显示器，其中纳米颗粒用于有源层，并且衬底是柔性塑料，其制造方法，使用该供体薄片制造薄膜晶体管（TFT）的方法，以及制造方法使用供体片的平板显示装置。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。供体片可以在室温下制造。供体片具有基膜，并且转移层设置在基膜的一侧并可转印，其中转印层具有被布置为彼此大致平行的多个纳米颗粒。

8. 发明授权

US07378711B2 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 失效
公开(公告)号：US07378711B2
公开(公告)日：2008-05-27
申请号：US10995537
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L27/01
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.

9. 发明授权

US07196747B2 Flat panel display comprising semiconductor layer with heterogeous lines 有权
标题翻译：平板显示器包括具有异质线的半导体层
公开(公告)号：US07196747B2
公开(公告)日：2007-03-27
申请号：US10754546
申请日：2004-01-12
申请人： Jae-Bon Koo , Ji-Yong Park , Sang Il Park , Hye-Dong Kim
发明人： Jae-Bon Koo , Ji-Yong Park , Sang Il Park , Hye-Dong Kim
IPC分类号： G02F1/136
CPC分类号： H01L27/3262 , H01L27/1296 , H01L27/3276
摘要： Provided is a flat panel display in which no stripes appear on a screen, thereby improving image quality. The flat panel display has a matrix-type array of sub-pixels, each of which includes a driving thin film transistor, a first electrode driven by the driving thin film transistor, and a second electrode driving a light emission unit together with the first electrode. The driving thin film transistor includes semiconductor channels which are derived from a semiconductor layer. Heterogeneous straight lines are separated from each other on the semiconductor layer. An imaginary line connecting the semiconductor channels of one column is not parallel to the heterogeneous straight lines.
摘要翻译：提供一种平板显示器，其中屏幕上不出现条纹，从而提高图像质量。平板显示器具有矩阵型子像素阵列，每个子像素包括驱动薄膜晶体管，由驱动薄膜晶体管驱动的第一电极和与第一电极一起驱动发光单元的第二电极。驱动薄膜晶体管包括衍生自半导体层的半导体沟道。不均匀的直线在半导体层上彼此分离。连接一列的半导体通道的假想线不平行于异质直线。

10. 发明授权

US06576502B1 Method for forming LDD/offset structure of thin film transistor 有权
标题翻译：薄膜晶体管的LDD /偏移结构的形成方法
公开(公告)号：US06576502B1
公开(公告)日：2003-06-10
申请号：US09693992
申请日：2000-10-23
申请人： Hye-dong Kim
发明人： Hye-dong Kim
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78621
摘要： A method for fabricating a thin film transistor. An active layer is first formed on a substrate, then a first insulating layer is formed on the active layer. Next, a gate electrode pattern is formed on the first insulating layer and an LDD region is formed by lightly doping ions in the active layer using the gate electrode pattern as a mask. A polymer layer is formed on a surface of the gate electrode pattern using an electrochemical polymerizing process, and source and drain contact layers are formed by densely doping ions in the active layer using the gate electrode pattern deposited with the polymer layer. A second insulating layer is then formed on a surface of the first insulating layer while covering the gate electrode pattern. Contact holes are formed through the insulating layers, and metal material is sputtered in the contact holes to form the source and drain electrodes.
摘要翻译：一种制造薄膜晶体管的方法。首先在衬底上形成有源层，然后在有源层上形成第一绝缘层。接下来，在第一绝缘层上形成栅电极图案，并使用栅电极图案作为掩模，通过在有源层中轻掺杂离子形成LDD区。使用电化学聚合方法在栅电极图案的表面上形成聚合物层，并且通过使用沉积有聚合物层的栅电极图案在有源层中密集掺杂离子形成源极和漏极接触层。然后在覆盖栅电极图案的同时，在第一绝缘层的表面上形成第二绝缘层。通过绝缘层形成接触孔，在接触孔中溅射金属材料，形成源极和漏极。

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