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1. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

2. 发明授权

US08043887B2 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US08043887B2
公开(公告)日：2011-10-25
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

3. 发明申请

US20060138405A1 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 审中-公开
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20060138405A1
公开(公告)日：2006-06-29
申请号：US11298211
申请日：2005-12-09
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

4. 发明申请

US20050269562A1 Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT) 审中-公开
标题翻译：薄膜晶体管（TFT）和具有薄膜晶体管（TFT）的平板显示面板
公开(公告)号：US20050269562A1
公开(公告)日：2005-12-08
申请号：US11126300
申请日：2005-05-11
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L51/50 , G02F1/136 , H01L21/336 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/05 , H05B33/14
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0036 , H01L51/0055 , H01L51/0541
摘要： A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括：栅电极; 源极电极和漏极电极，各自与栅电极绝缘; 以及适于接触所述源电极和漏电极中的每一个的有机半导体层，所述有机半导体层与所述栅电极绝缘; 其中所述有机半导体层包括具有比所述有机半导体层的其它部分更小的晶粒尺寸的边界区域，所述边界区域布置在所述有机半导体层的至少沟道区域和源极和漏极区域周围。

5. 发明授权

US07381984B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07381984B2
公开(公告)日：2008-06-03
申请号：US11280761
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L21/336 , H01L51/30
CPC分类号： H01L51/0545 , H01L51/002
摘要： Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an electron withdrawing layer composed of a Lewis acid compound formed between the source and drain electrodes and the organic semiconductor layer. Charges can easily accumulate so that a channel doping effect occurs in the semiconductor layer, thus preventing the formation of an energy barrier and increasing the number of carriers that are injected into a channel. As a result, a TFT having a low contact resistance, an large number of injected carriers, and good charge mobility can be obtained. A flat panel display including the TFT is reliable and has low power consumption.
摘要翻译：提供一种薄膜晶体管和包括该薄膜晶体管的有机电致发光显示器。有机电致发光显示器包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及由在源极和漏极之间形成的路易斯酸化合物和有机半导体层构成的吸电子层。可以容易地积累电荷，使得在半导体层中发生沟道掺杂效应，从而防止形成能量势垒并增加注入到沟道中的载流子的数量。结果，可以获得具有低接触电阻，大量注入载流子和良好的电荷迁移率的TFT。包括TFT的平板显示器是可靠的并且具有低功耗。

6. 发明申请

US20060124924A1 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US20060124924A1
公开(公告)日：2006-06-15
申请号：US11280761
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/002
摘要： Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an electron withdrawing layer composed of a Lewis acid compound formed between the source and drain electrodes and the organic semiconductor layer. Charges can easily accumulate so that a channel doping effect occurs in the semiconductor layer, thus preventing the formation of an energy barrier and increasing the number of carriers that are injected into a channel. As a result, a TFT having a low contact resistance, an large number of injected carriers, and good charge mobility can be obtained. A flat panel display including the TFT is reliable and has low power consumption.
摘要翻译：提供一种薄膜晶体管和包括该薄膜晶体管的有机电致发光显示器。有机电致发光显示器包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及由在源极和漏极之间形成的路易斯酸化合物和有机半导体层构成的吸电子层。可以容易地积累电荷，使得在半导体层中发生沟道掺杂效应，从而防止形成能量势垒并增加注入到沟道中的载流子的数量。结果，可以获得具有低接触电阻，大量注入载流子和良好的电荷迁移率的TFT。包括TFT的平板显示器是可靠的并且具有低功耗。

7. 发明申请

US20070052024A1 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US20070052024A1
公开(公告)日：2007-03-08
申请号：US11510454
申请日：2006-08-26
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

8. 发明授权

US08344364B2 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US08344364B2
公开(公告)日：2013-01-01
申请号：US12814414
申请日：2010-06-11
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L29/08 , B32B17/12 , B32B18/00
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

9. 发明授权

US07812342B2 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US07812342B2
公开(公告)日：2010-10-12
申请号：US11510454
申请日：2006-08-25
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L51/00
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

10. 发明申请

US20100252803A1 THIN FILM TRANSISTOR HAVING A NANO SEMICONDUCTOR SHEET AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US20100252803A1
公开(公告)日：2010-10-07
申请号：US12814414
申请日：2010-06-11
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L29/66
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

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