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1. 发明授权

US07828618B2 Super-thin OLED and method for manufacturing the same 有权
标题翻译：超薄OLED及其制造方法
公开(公告)号：US07828618B2
公开(公告)日：2010-11-09
申请号：US11745815
申请日：2007-05-08
申请人： Jin-Woo Park , Jang-Hyuk Kwon , Ho-Kyoon Chung
发明人： Jin-Woo Park , Jang-Hyuk Kwon , Ho-Kyoon Chung
IPC分类号： H01J1/62 , H01J63/04 , H01J9/24 , H01J9/26
CPC分类号： H01L51/0096 , C03C15/00 , H01L25/048 , H01L27/3267 , H01L27/3286 , H01L51/52 , H01L51/5253 , H01L51/5281 , H01L2251/5338 , H01L2251/558 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A flat panel display includes a glass substrate, an organic light-emitting part, and a sealing part. The organic light-emitting part includes one or more organic light-emitting devices (OLED) formed on a surface of the glass substrate, which has a thickness of about 0.05 mm to about 0.5 mm. The sealing part seals the organic light-emitting part and protects it from damage during the manufacturing process. A method for manufacturing the flat panel display includes preparing a glass substrate of approximately 0.7 mm thickness or greater; forming a plurality of organic light-emitting devices on a surface of the glass substrate, wherein a group of one or more of the plurality of organic light-emitting devices constitutes an organic light-emitting part; sealing each organic light-emitting part; and etching the glass substrate to a predetermined thickness.
摘要翻译：平板显示器包括玻璃基板，有机发光部件和密封部件。有机发光部分包括形成在玻璃基板的表面上的一个或多个有机发光器件（OLED），其厚度为约0.05mm至约0.5mm。密封部分密封有机发光部分，并在制造过程中保护其免受损坏。制造平板显示器的方法包括制备大约0.7mm或更大的玻璃基板; 在所述玻璃基板的表面上形成多个有机发光元件，其中，所述多个有机发光元件中的一个以上的一组或多个构成有机发光部; 密封每个有机发光部分; 并将玻璃基板蚀刻到预定厚度。

2. 发明申请

US20090291237A1 ELECTROLUMINESCENT DISPLAY DEVICE AND THERMAL TRANSFER DONOR FILM FOR THE ELECTROLUMINESCENT DISPLAY DEVICE 审中-公开
公开(公告)号：US20090291237A1
公开(公告)日：2009-11-26
申请号：US12536057
申请日：2009-08-05
申请人： Jin-Woo Park , Ho-Kyoon Chung , Jang-Hyuk Kwon , Mu-Hyun Kim , Seung-Yong Song , Young-Rag Do , Yoon-Chang Kim , Tae-Min Kang , Seong-Taek Lee
发明人： Jin-Woo Park , Ho-Kyoon Chung , Jang-Hyuk Kwon , Mu-Hyun Kim , Seung-Yong Song , Young-Rag Do , Yoon-Chang Kim , Tae-Min Kang , Seong-Taek Lee
IPC分类号： B41M5/40
CPC分类号： H01L51/5275 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L51/56
摘要： The invention is directed to an organic electroluminescent (EL) display device having an improved light extracting efficiency due to a photonic crystal layer formed proximate one side of a stack. Among other elements, the stack may include a first electrode formed on a substrate, an organic light emitting layer formed above the first electrode, and a second electrode formed above the organic light emitting layer. Additionally, the photonic crystal layer may be configured to correspond to a wavelength of colored light. An organic EL display device having an improved light extracting efficiency may be manufactured using a thermal transfer donor film to adhere the photonic crystal layer to the stack.

3. 发明授权

US07579199B2 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 有权
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US07579199B2
公开(公告)日：2009-08-25
申请号：US12004404
申请日：2007-12-21
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

4. 发明授权

US07414599B2 Organic light emitting device pixel circuit and driving method therefor 有权
标题翻译：有机发光器件像素电路及其驱动方法
公开(公告)号：US07414599B2
公开(公告)日：2008-08-19
申请号：US10886014
申请日：2004-07-06
申请人： Ho-Kyoon Chung , Yang-Wan Kim , Choon-Yul Oh , Oh-Kyong Kwon , Sang-Moo Choi
发明人： Ho-Kyoon Chung , Yang-Wan Kim , Choon-Yul Oh , Oh-Kyong Kwon , Sang-Moo Choi
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , G09G2320/043 , G09G2320/045
摘要： A pixel circuit in an organic light emitting device capable of realizing high gradation representation by self-compensating a threshold voltage, and a method for driving the same. The pixel circuit includes an electroluminescent element for emitting light in response to an applied driving current. A first transistor delivers a data signal voltage in response to a current scan line signal. A second transistor generates a driving current to drive the electroluminescent element in response to the data signal voltage. A third transistor connects the second transistor in the form of a diode in response to a current scan signal to self-compensate the threshold voltage of the second transistor. A capacitor stores the data signal voltage delivered to the second transistor. A fourth transistor delivers a power supply voltage to the second transistor in response to a current light-emitting signal. A fifth transistor provides the driving current, provided from the second transistor, for the electroluminescent element in response to the current light-emitting signal.
摘要翻译：能够通过自补偿阈值电压来实现高灰度表示的有机发光装置中的像素电路及其驱动方法。像素电路包括用于响应于施加的驱动电流发光的电致发光元件。第一晶体管响应于当前的扫描线信号传送数据信号电压。第二晶体管响应于数据信号电压产生驱动电流以驱动电致发光元件。第三晶体管响应于当前扫描信号而以二极管的形式连接第二晶体管，以自补偿第二晶体管的阈值电压。电容器存储传送到第二晶体管的数据信号电压。第四晶体管响应于当前的发光信号而向第二晶体管提供电源电压。响应于当前的发光信号，第五晶体管提供从第二晶体管提供的用于电致发光元件的驱动电流。

5. 发明授权

US07339315B2 Full color organic light-emitting device having color modulation layer 有权
标题翻译：具有调色层的全色有机发光装置
公开(公告)号：US07339315B2
公开(公告)日：2008-03-04
申请号：US10914119
申请日：2004-08-10
申请人： Min-Chul Suh , Ho-Kyoon Chung , Seong-Taek Lee , Jang-Hyuk Kwon
发明人： Min-Chul Suh , Ho-Kyoon Chung , Seong-Taek Lee , Jang-Hyuk Kwon
IPC分类号： H05B33/22
CPC分类号： H01L27/322 , H01L27/3244 , H01L51/5036 , H01L2251/5323
摘要： An organic light-emitting device has a color modulation layer. The organic light-emitting device comprises a substrate, a first electrode positioned on the substrate and a second electrode positioned on the first electrode, wherein at least one of the first electrode and the second electrode is transparent. An organic functional layer having at least an emission layer is interposed between the first electrode and the second electrode. A color modulation layer formed by a laser-induced thermal imaging method is positioned on a surface opposite to a surface adjacent to the emission layer of the transparent electrode, wherein the color modulation layer is at least one of a color filter and a color conversion medium.
摘要翻译：有机发光装置具有调色层。有机发光器件包括衬底，位于衬底上的第一电极和位于第一电极上的第二电极，其中第一电极和第二电极中的至少一个是透明的。具有至少发射层的有机功能层介于第一电极和第二电极之间。通过激光诱导热成像方法形成的色调制层位于与透明电极的发光层相邻的表面相对的表面上，其中色调制层是滤色器和变色介质中的至少一种。

6. 发明申请

US20060145150A1 Flat panel display device and method of fabricating the same 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20060145150A1
公开(公告)日：2006-07-06
申请号：US11365498
申请日：2006-03-02
申请人： Jin-Woo Park , Ho-Kyoon Chung
发明人： Jin-Woo Park , Ho-Kyoon Chung
IPC分类号： H01L29/08
CPC分类号： H01L51/524 , H01L51/5225
摘要： An organic light emitting device, and a method of fabricating the same, has a cathode electrode that can prevent oxygen or moisture from infiltrating. The organic light emitting device of the present invention has a lower electrode, an organic thin film layer and an upper electrode successively formed on the substrate. The upper electrode has at least two-layered thin films having different grain density and grain size. A lower film of the at least two-layered thin films of the upper electrode has a first Al thin film having a lower grain density and larger grain size than an upper of the at least two-layered thin films. The upper film has a second Al thin film having relatively higher grain density and smaller grain size than the first Al thin film.
摘要翻译：有机发光器件及其制造方法具有能够防止氧气或水分渗透的阴极电极。本发明的有机发光元件具有在基板上依次形成的下电极，有机薄膜层和上电极。上部电极具有至少两层具有不同晶粒密度和晶粒尺寸的薄膜。上部电极的至少两层薄膜的下部膜具有第一Al薄膜，其具有比上述至少两层薄膜更低的晶粒密度和更大的晶粒尺寸。上部膜具有比第一Al薄膜具有相对更高的晶粒密度和更小晶粒尺寸的第二Al薄膜。

7. 发明申请

US20050104516A1 Super-thin OLED and method for manufacturing the same 审中-公开
标题翻译：超薄OLED及其制造方法
公开(公告)号：US20050104516A1
公开(公告)日：2005-05-19
申请号：US10976807
申请日：2004-11-01
申请人： Jin-Woo Park , Jang-Hyuk Kwon , Ho-Kyoon Chung
发明人： Jin-Woo Park , Jang-Hyuk Kwon , Ho-Kyoon Chung
IPC分类号： H05B33/02 , G09F9/00 , G09F9/30 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/50 , H01L51/52 , H01L51/56 , H05B33/04 , H05B33/10 , H05B33/22
CPC分类号： H01L51/0096 , C03C15/00 , H01L25/048 , H01L27/3267 , H01L27/3286 , H01L51/52 , H01L51/5253 , H01L51/5281 , H01L2251/5338 , H01L2251/558 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A flat panel display includes a glass substrate, an organic light-emitting part, and a sealing part. The organic light-emitting part includes one or more organic light-emitting devices (OLED) formed on a surface of the glass substrate, which has a thickness of about 0.05 mm to about 0.5 mm. The sealing part seals the organic light-emitting part and protects it from damage during the manufacturing process. A method for manufacturing the flat panel display comprises preparing a glass substrate of approximately 0.7 mm thickness or greater; forming a plurality of organic light-emitting devices on a surface of the glass substrate, wherein a group of one or more of the plurality of organic light-emitting devices constitutes an organic light-emitting part; sealing each organic light-emitting part; and etching the glass substrate to a predetermined thickness.
摘要翻译：平板显示器包括玻璃基板，有机发光部件和密封部件。有机发光部分包括形成在玻璃基板的表面上的一个或多个有机发光器件（OLED），其厚度为约0.05mm至约0.5mm。密封部分密封有机发光部分，并在制造过程中保护其免受损坏。制造平板显示器的方法包括制备大约0.7mm或更大的玻璃基板; 在所述玻璃基板的表面上形成多个有机发光元件，其中，所述多个有机发光元件中的一个以上的一组或多个构成有机发光部; 密封每个有机发光部分; 并将玻璃基板蚀刻到预定厚度。

8. 发明授权

US6140233A Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices thereby 失效
标题翻译：制造半导体器件的方法，用于制造半导体器件的蚀刻组合物以及半导体器件
公开(公告)号：US6140233A
公开(公告)日：2000-10-31
申请号：US109922
申请日：1998-07-02
申请人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
发明人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
IPC分类号： C09K13/04 , H01L21/321 , H01L21/768 , H01L21/44
CPC分类号： H01L21/7684 , C09K13/04 , H01L21/3212 , Y10S438/981
摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.
摘要翻译：提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜钨膜仅存在于不存在于绝缘膜上的接触孔内。蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

9. 发明授权

US5944889A Methods of heat-treating semiconductor wafers 失效
标题翻译：热处理半导体晶片的方法
公开(公告)号：US5944889A
公开(公告)日：1999-08-31
申请号：US978937
申请日：1997-11-26
申请人： Jae-guen Park , Gon-sub Lee , Kyoo-chul Cho , Ho-kyoon Chung
发明人： Jae-guen Park , Gon-sub Lee , Kyoo-chul Cho , Ho-kyoon Chung
IPC分类号： H01L21/324 , H01L21/322 , C30B25/20
CPC分类号： H01L21/3225
摘要： With a view to optimizing the donor killing process performed in the semiconductor wafer fabricating process, a heat-treating operation is performed in a thermal furnace above at least 900 .degree. C. for a predetermined time so that growth of the initial oxygen precipitates, induced into the crystal lattices during single-crystal growth, is suppressed. Thus, the oxygen precipitates are easily suppressed, irrespective of the concentration of the initial oxygen, so that the yield of the semiconductor device is improved
摘要翻译：为了优化在半导体晶片制造工艺中进行的供体杀死过程，在热处理炉中，在高于至少900℃的温度下进行预定时间的热处理操作，使得初始氧沉淀物的生长被诱导成单晶生长期间的晶格被抑制。因此，不管初始氧的浓度如何，容易抑制氧析出物，从而提高半导体器件的产率

10. 发明授权

US5846921A Semiconductor substrate cleaning solutions, methods of forming the same, and methods using the same 失效
标题翻译：半导体衬底清洁溶液，其形成方法和使用其的方法
公开(公告)号：US5846921A
公开(公告)日：1998-12-08
申请号：US805210
申请日：1997-02-27
申请人： June-ing Gil , Seok-ho Yi , Sang-mun Chon , Ho-kyoon Chung
发明人： June-ing Gil , Seok-ho Yi , Sang-mun Chon , Ho-kyoon Chung
IPC分类号： H01L21/304 , C11D3/39 , C11D7/08 , C11D7/26 , C11D11/00 , C11D7/54 , B08B3/08 , C11D7/28
CPC分类号： C11D7/08 , C11D11/0047 , C11D3/3947 , C11D7/261
摘要： Cleaning solutions for application to semiconductor substrates comprise hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water. Methods of cleaning semiconductor substrates comprise contacting the semiconductor substrates having contaminants contained thereon with cleaning solutions comprising hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water; contacting the semiconductor substrates with first baths of water to remove the cleaning solutions contained on the semiconductor substrates; contacting the semiconductor substrates with second baths containing water to remove the contaminants contained on the semiconductor substrates; and rotating the semiconductor substrates to remove water remaining thereon to clean the semiconductor substrates.
摘要翻译：用于半导体衬底的清洁溶液包括氢氟酸，过氧化氢，异丙醇和水。清洗半导体衬底的方法包括将其上含有污染物的半导体衬底与包含氢氟酸，过氧化氢，异丙醇和水的清洁溶液接触; 使半导体衬底与第一浴水接触，以除去包含在半导体衬底上的清洁溶液; 使半导体衬底与含有水的第二浴接触以除去包含在半导体衬底上的污染物; 并旋转半导体衬底以去除残留在其上的水以清洁半导体衬底。

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