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1. 发明授权

US07973315B2 Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor 有权
标题翻译：薄膜晶体管，平板显示装置及其制造薄膜晶体管的方法
公开(公告)号：US07973315B2
公开(公告)日：2011-07-05
申请号：US11167157
申请日：2005-06-28
申请人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
发明人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78606
摘要： A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.
摘要翻译：一种由于热或机械应力而不会变形或剥落的薄膜晶体管，具有该薄膜晶体管的平板显示器及其制造方法，所述薄膜晶体管包括基板，设置在基板上的图案化缓冲层，设置在缓冲层上的图案化有源层，与有源层绝缘的栅极电极以及与有源层接触并与栅电极绝缘的源电极和漏电极。

2. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

3. 发明申请

US20080176349A1 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 有权
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US20080176349A1
公开(公告)日：2008-07-24
申请号：US12004404
申请日：2007-12-21
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/36 , H01L51/56
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

4. 发明授权

US07381579B2 Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet 有权
标题翻译：供体片，其制造方法，使用供体片的TFT的制造方法以及使用供体片的平板显示装置的制造方法
公开(公告)号：US07381579B2
公开(公告)日：2008-06-03
申请号：US10995514
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/00
CPC分类号： B41M5/38207 , B41M5/395 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/04 , H01L29/78681 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369 , Y10S977/773 , Y10T428/31504
摘要： A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film transistor (TFT) using the donor sheet, and a method of manufacturing a flat panel display device using the donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The donor sheet can be manufactured at room temperature. The donor sheet has a base film, and a transfer layer being disposed at one side of the base film and transferable, wherein the transfer layer has a plurality of nanoparticles which are arranged to be approximately parallel to one another.
摘要翻译：一种柔性平板显示器，其中纳米颗粒用于有源层，并且衬底是柔性塑料，其制造方法，使用该供体薄片制造薄膜晶体管（TFT）的方法，以及制造方法使用供体片的平板显示装置。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。供体片可以在室温下制造。供体片具有基膜，并且转移层设置在基膜的一侧并可转印，其中转印层具有被布置为彼此大致平行的多个纳米颗粒。

5. 发明授权

US07378711B2 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 失效
公开(公告)号：US07378711B2
公开(公告)日：2008-05-27
申请号：US10995537
申请日：2004-11-24
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L27/01
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.

6. 发明授权

US07485576B2 Method of forming conductive pattern, thin film transistor, and method of manufacturing the same 有权
标题翻译：形成导电图案的方法，薄膜晶体管及其制造方法
公开(公告)号：US07485576B2
公开(公告)日：2009-02-03
申请号：US11296874
申请日：2005-12-08
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn , Hye-Dong Kim , Fischer Joerg , Werner Humbs
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn , Hye-Dong Kim , Fischer Joerg , Werner Humbs
IPC分类号： H01L21/44
CPC分类号： H01L51/0022 , B82Y10/00 , B82Y30/00 , H01L21/31691 , H01L51/0005 , H01L51/0021 , H01L51/0023 , H01L51/0097 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/102 , Y02E10/549 , Y02P70/521
摘要： A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.
摘要翻译：一种形成导电图案的方法，其中通过使用激光烧蚀法和喷墨法形成导电图案，使用该方法制造的有机薄膜晶体管可以在没有光刻工艺的低温下容易地形成导电图案，使用该方法制造的有机薄膜晶体管，以及制造有机薄膜晶体管的方法。在平板显示装置中形成导电图案的方法包括制备基底构件，在基底构件中形成具有与导电图案相同形状的凹槽，并且通过将导电材料施加到凹槽中来形成导电图案。所述基座构件具有包括具有所述凹槽的塑料基板和包括基板和绝缘层的结构的结构之一，所述结构布置在所述基板上并具有所述凹槽。

7. 发明申请

US20060103290A1 Organic electroluminescence device and method of manufacturing the same 有权
标题翻译：有机电致发光元件及其制造方法
公开(公告)号：US20060103290A1
公开(公告)日：2006-05-18
申请号：US11267740
申请日：2005-11-04
申请人： Min-Chul Suh , Jae-Bon Koo , Hye-Dong Kim
发明人： Min-Chul Suh , Jae-Bon Koo , Hye-Dong Kim
IPC分类号： H01J29/10
CPC分类号： H01L51/5296 , H01L27/3244 , H01L51/5203 , H01L51/56
摘要： An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed. The EL device includes: a first organic light emitting transistor including a first source electrode; a first drain electrode opposing the first source electrode; a first intermediate layer including at least an emission layer formed between the first source electrode and the first drain electrode; and a first gate electrode which is insulated from the first source electrode, the first drain electrode, and the first intermediate layer and surrounds the first intermediate layer; and a second organic light emitting transistor including a second source electrode; a second drain electrode opposing the second source electrode; a second intermediate layer including at least an emission layer formed between the second source electrode and the second drain electrode; and a second gate electrode which is insulated from the second source electrode, the second drain electrode, and the second intermediate layer, surrounds the second intermediate layer, and is connected to the first drain electrode.
摘要翻译：公开了一种由于简化了有机发光晶体管的结构和使用而制造成本低和产量提高的EL器件及其制造方法。 EL器件包括：第一有机发光晶体管，包括第一源电极; 与第一源电极相对的第一漏电极; 至少包括形成在第一源极和第一漏电极之间的发光层的第一中间层; 以及第一栅电极，其与所述第一源电极，所述第一漏电极和所述第一中间层绝缘并且包围所述第一中间层; 和包括第二源电极的第二有机发光晶体管; 与第二源电极相对的第二漏电极; 至少包括形成在所述第二源电极和所述第二漏电极之间的发光层的第二中间层; 并且与第二源电极，第二漏电极和第二中间层绝缘的第二栅电极围绕第二中间层，并且连接到第一漏电极。

8. 发明申请

US20060011917A1 Thin film transistor, flat panel display device therewith, and method of manufacturing the thin film transistor 有权
标题翻译：薄膜晶体管，平板显示装置及其制造薄膜晶体管的方法
公开(公告)号：US20060011917A1
公开(公告)日：2006-01-19
申请号：US11167157
申请日：2005-06-28
申请人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
发明人： Jae-Bon Koo , Hye-Dong Kim , Min-Chul Suh
IPC分类号： H01L29/76 , H01L29/04
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78606
摘要： A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.
摘要翻译：一种由于热或机械应力而不会变形或剥落的薄膜晶体管，具有该薄膜晶体管的平板显示器及其制造方法，所述薄膜晶体管包括基板，设置在基板上的图案化缓冲层，设置在缓冲层上的图案化有源层，与有源层绝缘的栅极电极以及与有源层接触并与栅电极绝缘的源电极和漏电极。

9. 发明申请

US20050269562A1 Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT) 审中-公开
标题翻译：薄膜晶体管（TFT）和具有薄膜晶体管（TFT）的平板显示面板
公开(公告)号：US20050269562A1
公开(公告)日：2005-12-08
申请号：US11126300
申请日：2005-05-11
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L51/50 , G02F1/136 , H01L21/336 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/05 , H05B33/14
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0036 , H01L51/0055 , H01L51/0541
摘要： A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括：栅电极; 源极电极和漏极电极，各自与栅电极绝缘; 以及适于接触所述源电极和漏电极中的每一个的有机半导体层，所述有机半导体层与所述栅电极绝缘; 其中所述有机半导体层包括具有比所述有机半导体层的其它部分更小的晶粒尺寸的边界区域，所述边界区域布置在所述有机半导体层的至少沟道区域和源极和漏极区域周围。

10. 发明授权

US08043887B2 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US08043887B2
公开(公告)日：2011-10-25
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

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