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1. 发明申请

US20150093977A1 METHODS FOR PRODUCING IN-SITU GROOVES IN CHEMICAL MECHANICAL PLANARIZATION (CMP) PADS, AND NOVEL CMP PAD DESIGNS 审中-公开
标题翻译：在化学机械平面化（CMP）PADS和新型CMP垫设计中生产现场格栅的方法
公开(公告)号：US20150093977A1
公开(公告)日：2015-04-02
申请号：US14562589
申请日：2014-12-05
申请人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
发明人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
IPC分类号： B24B37/26
CPC分类号： B24B37/26 , B24D15/04 , B24D18/0009 , B29C33/3842 , B29C33/405 , B29C33/424 , B29C33/565 , B29K2083/00 , B33Y80/00
摘要： Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要翻译：提供了用于在CMP垫中产生原位凹槽的方法。通常，用于制造原位槽的方法包括将硅衬里图案化，将硅衬里放置在模具中或模具上，将CMP衬垫材料添加到硅衬里，并允许CMP垫固化的步骤。还描述了包括新颖凹槽设计的CMP垫。例如，这里描述的是包括同心圆形槽和轴向弯曲槽，反向对数槽，重叠圆形槽，拉索格，双螺旋槽和多重重叠的轴向曲线槽的CMP垫。 CMP垫可以由聚氨酯制成，并且其中产生的凹槽可以由以下方法制成：由硅胶衬里，激光书写，水射流切割，3-D印刷，热成型，真空成型，微接触印刷，热冲压及其混合物。

2. 发明申请

US20130059509A1 METHODS FOR PRODUCING IN-SITU GROOVES IN CHEMICAL MECHANICAL PLANARIZATION (CMP) PADS, AND NOVEL CMP PAD DESIGNS 有权
公开(公告)号：US20130059509A1
公开(公告)日：2013-03-07
申请号：US13612135
申请日：2012-09-12
申请人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
发明人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
IPC分类号： B24B37/26
CPC分类号： B24B37/26 , B24D15/04 , B24D18/0009 , B29C33/3842 , B29C33/405 , B29C33/424 , B29C33/565 , B29K2083/00 , B33Y80/00
摘要： Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

3. 发明授权

US08287793B2 Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs 有权
标题翻译：用于在化学机械平面化（CMP）焊盘中产生原位槽的方法，以及新颖的CMP焊盘设计
公开(公告)号：US08287793B2
公开(公告)日：2012-10-16
申请号：US11998212
申请日：2007-11-28
申请人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
发明人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
IPC分类号： B29C39/00
CPC分类号： B24B37/26 , B24D15/04 , B24D18/0009 , B29C33/3842 , B29C33/405 , B29C33/424 , B29C33/565 , B29K2083/00 , B33Y80/00
摘要： Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous grooves, double spiral grooves, and multiple overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要翻译：提供了用于在CMP垫中产生原位凹槽的方法。通常，用于制造原位槽的方法包括将硅衬里图案化，将硅衬里放置在模具中或模具上，将CMP衬垫材料添加到硅衬里，并允许CMP垫固化的步骤。还描述了包括新颖凹槽设计的CMP垫。例如，这里描述的是包括同心圆形槽和轴向弯曲槽，反向对数槽，重叠圆形槽，拉索槽，双螺旋槽和多个重叠轴向弯曲槽的CMP垫。 CMP垫可以由聚氨酯制成，并且其中产生的凹槽可以由以下方法制成：由硅胶衬里，激光书写，水射流切割，3-D印刷，热成型，真空成型，微接触印刷，热冲压及其混合物。

4. 发明授权

US06380606B1 Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same 有权
标题翻译：使用层状衬垫氮化物和干场氧化堆叠的场隔离过程以及采用其的半导体器件
公开(公告)号：US06380606B1
公开(公告)日：2002-04-30
申请号：US09205413
申请日：1998-12-02
申请人： David C. Brady , Isik C. Kizilyalli , Pradip K. Roy , Hem M. Vaidya
发明人： David C. Brady , Isik C. Kizilyalli , Pradip K. Roy , Hem M. Vaidya
IPC分类号： H01L2900
CPC分类号： H01L21/3185 , H01L21/32
摘要： The present invention provides methods of manufacturing a field oxide isolation structure over a semiconductor. One of the methods includes the steps of: (1) depositing a first stack-nitride sublayer over the semiconductor at a first deposition rate and (2) subsequently depositing a second stack-nitride sublayer over the first stack-sublayer at a second deposition rate that is either greater or less than the first deposition rate. The first and second deposition rates provide first and second stack-nitride sublayers that cooperate to form a relatively thin, uniform thickness of the field oxide isolation structure over the semiconductor and provide a stress-accommodating system within the semiconductor. The varying rates of deposition and accompanying changes in mixture ratio, produce a stack that is better able to absorb stress, has greater uniformity and is far less subject to the disadvantageous phenomenon of stack-lifting, particularly encountered in semiconductor having a PADOX layer deposited thereon.
摘要翻译：本发明提供在半导体上制造场氧化物隔离结构的方法。其中一种方法包括以下步骤：（1）以第一沉积速率在半导体上沉积第一堆叠氮化物子层，以及（2）随后以第二沉积速率在第一堆叠子层上沉积第二堆叠氮化物层大于或小于第一沉积速率。第一和第二沉积速率提供第一和第二堆叠氮化物层，其协作以在半导体上形成场氧化物隔离结构的相对薄的均匀厚度，并在半导体内提供应力容纳系统。不同的沉积速率和伴随的混合比例的变化产生更好地吸收应力的叠层，具有更大的均匀性，并且远远少于堆叠提升的不利现象，特别是在其上沉积有PADOX层的半导体中遇到。

5. 发明授权

US06291848B1 Integrated circuit capacitor including anchored plugs 有权
标题翻译：集成电路电容器，包括固定插头
公开(公告)号：US06291848B1
公开(公告)日：2001-09-18
申请号：US09364767
申请日：1999-07-30
申请人： Sundar Srinivasan Chetlur , James Theodore Clemens , Sailesh Mansinh Merchant , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sundar Srinivasan Chetlur , James Theodore Clemens , Sailesh Mansinh Merchant , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： H01L27108
CPC分类号： H01L21/76838 , H01L27/10817 , H01L27/10852 , H01L28/60
摘要： An integrated circuit capacitor includes a substrate, a first dielectric layer adjacent the substrate and having a first trench therein, and a first metal plug extending upwardly into the first trench. An interconnection line overlies the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. A second dielectric layer is on the interconnection line and has a second trench therein. A second metal plug extends upwardly into the second trench. More particularly, the second metal plug includes a body portion extending upwardly into the second trench, and anchor portions connected to the body portion and engaging the anchoring recesses to anchor the second metal plug to the interconnection line. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.
摘要翻译：集成电路电容器包括衬底，与衬底相邻并且在其中具有第一沟槽的第一电介质层和向上延伸到第一沟槽中的第一金属插塞。互连线覆盖在第一沟槽上并接触第一金属插塞以在第一金属插塞的相对侧上限定锚定凹槽。第二介电层位于互连线上并且在其中具有第二沟槽。第二金属插头向上延伸到第二沟槽中。更具体地，第二金属插头包括向上延伸到第二沟槽中的主体部分，以及连接到主体部分并且与固定凹部接合并将第二金属插头固定到互连线的锚定部分。由于第二金属插塞被锚固，所以第二沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分离。

6. 发明授权

US06204186B1 Method of making integrated circuit capacitor including tapered plug 有权
标题翻译：制造集成电路电容器包括锥形插头的方法
公开(公告)号：US06204186B1
公开(公告)日：2001-03-20
申请号：US09364366
申请日：1999-07-30
申请人： Samir Chaudhry , Sundar Srinivasan Chetlur , Nace Layadi , Pradip Kumar Roy , Hem M. Vaidya
发明人： Samir Chaudhry , Sundar Srinivasan Chetlur , Nace Layadi , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： H01L21311
CPC分类号： H01L28/60 , H01L21/76804 , H01L27/10808 , H01L27/10852 , H01L28/40
摘要： A method of making a capacitor includes the steps of forming an interconnection line above a substrate, depositing a first dielectric layer on the interconnection line, and etching a via in the first dielectric layer. The via has a tapered width which increases in a direction toward the substrate. Further, the method includes filling the via with a conductive metal to form a metal plug, and etching a trench in the first dielectric layer around an upper portion of the metal plug. The metal plug has a tapered width which secures it into the dielectric layer. A second dielectric layer is deposited adjacent the metal plug and an upper electrode is deposited on the second dielectric layer. Preferably, a lower electrode is deposited to line the trench and contact the metal plug.
摘要翻译：一种制造电容器的方法包括以下步骤：在衬底上形成互连线，在互连线上沉积第一介电层，以及蚀刻第一介电层中的通孔。通孔具有朝向基板的方向增加的锥形宽度。此外，该方法包括用导电金属填充通孔以形成金属插塞，并且在金属插塞的上部周围蚀刻第一电介质层中的沟槽。金属插头具有将其固定到电介质层中的锥形宽度。第二电介质层沉积在金属插塞附近，并且上电极沉积在第二电介质层上。优选地，沉积下电极以对准沟槽并接触金属插塞。

7. 发明申请

US20080211141A1 Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs 有权
标题翻译：用于在化学机械平面化（CMP）焊盘中产生原位槽的方法，以及新颖的CMP焊盘设计
公开(公告)号：US20080211141A1
公开(公告)日：2008-09-04
申请号：US11998212
申请日：2007-11-28
申请人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
发明人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
IPC分类号： B29C39/02 , C08J5/00 , B29C39/26 , B29C41/46
CPC分类号： B24B37/26 , B24D15/04 , B24D18/0009 , B29C33/3842 , B29C33/405 , B29C33/424 , B29C33/565 , B29K2083/00 , B33Y80/00
摘要： Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要翻译：提供了用于在CMP垫中产生原位凹槽的方法。通常，用于制造原位槽的方法包括将硅衬里图案化，将硅衬里放置在模具中或模具上，将CMP衬垫材料添加到硅衬里，并允许CMP垫固化的步骤。还描述了包括新颖凹槽设计的CMP垫。例如，这里描述的是包括同心圆形槽和轴向弯曲槽，反向对数槽，重叠圆形槽，拉索格，双螺旋槽和多重重叠的轴向曲线槽的CMP垫。 CMP垫可以由聚氨酯制成，并且其中产生的凹槽可以由以下方法制成：由硅胶衬里，激光书写，水射流切割，3-D印刷，热成型，真空成型，微接触印刷，热冲压及其混合物。

8. 发明授权

US6153452A Method of manufacturing semiconductor devices having improved polycide integrity through introduction of a silicon layer within the polycide structure 失效
标题翻译：通过在多晶硅化合物结构内引入硅层，制造具有改善的聚合物完整性的半导体器件的方法
公开(公告)号：US6153452A
公开(公告)日：2000-11-28
申请号：US782010
申请日：1997-01-07
申请人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy , Hem M. Vaidya
发明人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy , Hem M. Vaidya
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49
CPC分类号： H01L21/28061 , H01L21/823835 , H01L29/4933
摘要： Methods of manufacturing a semiconductor device. One method includes the steps of: (1) providing a substrate over which is to be deposited a metal silicide layer having a stoichiometric ratio within a desired range, (2) providing a target composed of a metal silicide, the target subject to degradation by reason of use, (3) sputtering atoms from the target to form the metal silicide layer over the substrate, the stoichiometric ratio subject to being without the desired range by reason of the degradation of the target and (4) depositing a predetermined amount of silicon on the metal silicide layer to return the stoichiometric ratio to within the desired range, a useful life of the target thereby increased.
摘要翻译：制造半导体器件的方法。一种方法包括以下步骤：（1）提供要在其上沉积化学计量比在所需范围内的金属硅化物层的衬底，（2）提供由金属硅化物组成的靶，靶由使用原因，（3）从靶上溅射原子以在衬底上形成金属硅化物层，化学计量比由于靶的劣化而不具有所需的范围，（4）沉积预定量的硅在金属硅化物层上以将化学计量比返回到所需范围内，从而靶的使用寿命增加。

9. 发明授权

US07377840B2 Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs 有权
公开(公告)号：US07377840B2
公开(公告)日：2008-05-27
申请号：US10897192
申请日：2004-07-21
申请人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
发明人： Manish Deopura , Hem M. Vaidya , Pradip K. Roy
IPC分类号： B24D11/00
CPC分类号： B24B37/26 , B24D15/04 , B24D18/0009 , B29C33/3842 , B29C33/405 , B29C33/424 , B29C33/565 , B29K2083/00 , B33Y80/00
摘要： Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

10. 发明授权

US06375541B1 Polishing fluid polishing method semiconductor device and semiconductor device fabrication method 有权
标题翻译：抛光液抛光法半导体器件及半导体器件制造方法
公开(公告)号：US06375541B1
公开(公告)日：2002-04-23
申请号：US09483576
申请日：2000-01-14
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译：包括分布有机相和连续水相的抛光液。分布相具有至少一种络合剂，水相中分散有磨料颗粒。在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。

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