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1. 发明授权

US06458016B2 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method 有权
标题翻译：抛光液，抛光法，半导体器件及半导体器件的制造方法
公开(公告)号：US06458016B2
公开(公告)日：2002-10-01
申请号：US09894116
申请日：2001-06-28
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： B24B2118
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译：包括分布有机相和连续水相的抛光液。分布相具有至少一种络合剂，水相中分散有磨料颗粒。在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。

2. 发明授权

US06375541B1 Polishing fluid polishing method semiconductor device and semiconductor device fabrication method 有权
标题翻译：抛光液抛光法半导体器件及半导体器件制造方法
公开(公告)号：US06375541B1
公开(公告)日：2002-04-23
申请号：US09483576
申请日：2000-01-14
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译：包括分布有机相和连续水相的抛光液。分布相具有至少一种络合剂，水相中分散有磨料颗粒。在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。

3. 发明授权

US06291848B1 Integrated circuit capacitor including anchored plugs 有权
标题翻译：集成电路电容器，包括固定插头
公开(公告)号：US06291848B1
公开(公告)日：2001-09-18
申请号：US09364767
申请日：1999-07-30
申请人： Sundar Srinivasan Chetlur , James Theodore Clemens , Sailesh Mansinh Merchant , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sundar Srinivasan Chetlur , James Theodore Clemens , Sailesh Mansinh Merchant , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： H01L27108
CPC分类号： H01L21/76838 , H01L27/10817 , H01L27/10852 , H01L28/60
摘要： An integrated circuit capacitor includes a substrate, a first dielectric layer adjacent the substrate and having a first trench therein, and a first metal plug extending upwardly into the first trench. An interconnection line overlies the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. A second dielectric layer is on the interconnection line and has a second trench therein. A second metal plug extends upwardly into the second trench. More particularly, the second metal plug includes a body portion extending upwardly into the second trench, and anchor portions connected to the body portion and engaging the anchoring recesses to anchor the second metal plug to the interconnection line. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.
摘要翻译：集成电路电容器包括衬底，与衬底相邻并且在其中具有第一沟槽的第一电介质层和向上延伸到第一沟槽中的第一金属插塞。互连线覆盖在第一沟槽上并接触第一金属插塞以在第一金属插塞的相对侧上限定锚定凹槽。第二介电层位于互连线上并且在其中具有第二沟槽。第二金属插头向上延伸到第二沟槽中。更具体地，第二金属插头包括向上延伸到第二沟槽中的主体部分，以及连接到主体部分并且与固定凹部接合并将第二金属插头固定到互连线的锚定部分。由于第二金属插塞被锚固，所以第二沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分离。

4. 发明授权

US6103586A Method for making integrated circuit capacitor including anchored plugs 有权
标题翻译：制造集成电路电容器包括固定插头的方法
公开(公告)号：US6103586A
公开(公告)日：2000-08-15
申请号：US364025
申请日：1999-07-30
申请人： Sundar Srinivasan Chetlur , James Theodore Clemens , Sailesh Mansinh Merchant , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sundar Srinivasan Chetlur , James Theodore Clemens , Sailesh Mansinh Merchant , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： H01L21/8242 , H01L21/02 , H01L21/768 , H01L27/108 , H01L21/20
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895
摘要： A method for making an integrated circuit capacitor includes forming a first dielectric layer adjacent a substrate, forming a first opening in the first dielectric layer, filling the first opening with a conductive material to define a first metal plug, and forming a trench in the first dielectric layer adjacent the first metal plug. An interconnection line lines the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. The method further includes forming a second dielectric layer on the interconnection line, forming a second opening in the second dielectric layer, and filling the second opening with a conductive metal to define a second metal plug having a body portion and anchor portions extending downward from the body portion for engaging the anchoring recesses to anchor the second metal plug. A second trench is formed in the second dielectric layer adjacent the second metal plug, and is aligned with the first trench. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line. The electrodes and dielectric layers of the capacitor are formed so that they line the second trench.
摘要翻译：一种制造集成电路电容器的方法包括：在基片附近形成第一电介质层，在第一电介质层中形成第一开口，用导电材料填充第一开口以限定第一金属插塞，并在第一电介质层中形成沟槽电介质层邻近第一金属插头。互连线对准第一沟槽并接触第一金属插塞以在第一金属插塞的相对侧上限定锚定凹槽。所述方法还包括在所述互连线上形成第二电介质层，在所述第二电介质层中形成第二开口，并用导电金属填充所述第二开口，以限定第二金属插塞，所述第二金属插塞具有主体部分和从所述第二介质层向下延伸的固定部分主体部分，用于接合所述锚定凹部以锚定所述第二金属插塞。在与第二金属插塞相邻的第二电介质层中形成第二沟槽，并且与第一沟槽对准。由于第二金属插塞被锚固，所以第二沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分离。电容器的电极和电介质层形成为使得它们与第二沟槽对齐。

5. 发明授权

US06319095B1 Colloidal suspension of abrasive particles containing magnesium as CMP slurry 有权
标题翻译：含有镁的磨料颗粒的胶体悬浮液作为CMP浆料
公开(公告)号：US06319095B1
公开(公告)日：2001-11-20
申请号：US09521768
申请日：2000-03-09
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： B24B100
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02
摘要： An improved colloidal slurry for chemical mechanical polishing and methods of polishing using the improved colloidal slurry.
摘要翻译：用于化学机械抛光的改进的胶体浆料和使用改进的胶体浆料的抛光方法。

6. 发明授权

US06524957B2 Method of forming in-situ electroplated oxide passivating film for corrosion inhibition 失效
标题翻译：形成原位电镀氧化钝化膜的方法进行腐蚀抑制
公开(公告)号：US06524957B2
公开(公告)日：2003-02-25
申请号：US09953706
申请日：2001-09-17
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/7684 , H01L21/76888 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.
摘要翻译：一种用于制造用于半导体的铜金属互连的装置，该铜金属互连件在铜在通孔内沉积期间具有在原位沉积在铜中的氧化物层。

7. 发明授权

US06364744B1 CMP system and slurry for polishing semiconductor wafers and related method 有权
标题翻译： CMP系统和用于抛光半导体晶片的浆料及相关方法
公开(公告)号：US06364744B1
公开(公告)日：2002-04-02
申请号：US09496829
申请日：2000-02-02
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： B24B4900
CPC分类号： B24B37/04 , B24B57/02 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing (CMP) system includes a polishing device including a polishing article. The polishing device provides relative movement between the semiconductor wafer and the polishing article with a slurry therebetween. The slurry preferably includes abrasive particles and a photocatalyst to enhance oxidation of metal of the semiconductor wafer. The slurry may also include water and the photocatalyst is a mixed metal oxide for breaking down water into hydrogen and oxygen in the presence of light.
摘要翻译：化学机械抛光（CMP）系统包括包括抛光制品的抛光装置。抛光装置提供半导体晶片和抛光制品之间的相对运动，其间具有浆料。该浆料优选包括研磨颗粒和光催化剂以增强半导体晶片的金属的氧化。浆料还可以包括水，光催化剂是用于在光存在下将水分解成氢和氧的混合金属氧化物。

8. 发明授权

US06287970B1 Method of making a semiconductor with copper passivating film 有权
标题翻译：用铜钝化膜制造半导体的方法
公开(公告)号：US06287970B1
公开(公告)日：2001-09-11
申请号：US09370912
申请日：1999-08-06
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , William Michael Moller , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , William Michael Moller , Pradip Kumar Roy
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/321 , H01L21/76886
摘要： A method of making a semiconductor device includes the steps of forming an oxide layer adjacent a semiconductor substrate, etching trenches within the oxide layer, depositing a copper layer to at least fill the etched trenches, and forming a copper arsenate layer on the deposited copper layer. The copper arsenate layer is then chemically mechanically polished. The copper layer may be deposited by at least one of electrodeposition, electroplating and chemical vapor deposition. The copper arsenate layer on the surface of the deposited copper layer inhibits oxidation and corrosion and stabilizes the microstructure of the deposited copper layer to thereby eliminate a need to subsequently anneal the deposited copper layer.
摘要翻译：制造半导体器件的方法包括以下步骤：在半导体衬底附近形成氧化物层，蚀刻氧化物层内的沟槽，沉积铜层以至少填充蚀刻的沟槽，以及在沉积的铜层上形成砷酸铜层。然后将砷酸铜层化学机械抛光。可以通过电沉积，电镀和化学气相沉积中的至少一种来沉积铜层。沉积的铜层表面上的砷酸铜层抑制氧化和腐蚀并稳定沉积的铜层的微观结构，从而不需要随后退火沉积的铜层。

9. 发明授权

US06368200B1 Polishing pads from closed-cell elastomer foam 有权
标题翻译：来自闭孔弹性体泡沫的抛光垫
公开(公告)号：US06368200B1
公开(公告)日：2002-04-09
申请号：US09516836
申请日：2000-03-02
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： B24D1100
CPC分类号： B24B37/24
摘要： A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.
摘要翻译：由闭孔弹性体泡沫形成的抛光垫包括垫内的气泡群。当由于抛光而抛光垫磨损并且抛光表面后退时，新形成的抛光表面包括由新露出的气泡形成的孔。孔隙接收和保留抛光浆料并有助于化学机械抛光过程。不需要衬垫调节，因为在抛光期间表面后退时，在衬垫表面上不断产生新的孔。用于形成抛光垫的方法包括将气泡注入用于形成垫的粘性弹性体材料中。选择工艺条件以在固化和固化过程步骤期间保持弹性体材料内的气泡。

10. 发明授权

US06458289B1 CMP slurry for polishing semiconductor wafers and related methods 有权
标题翻译：用于抛光半导体晶片的CMP浆料及相关方法
公开(公告)号：US06458289B1
公开(公告)日：2002-10-01
申请号：US09413742
申请日：1999-10-06
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： C09K1300
CPC分类号： H01L21/3212
摘要： A CMP slurry includes a first emulsion having a continuous aqueous phase and a second emulsion. The first emulsion includes abrasive particles, and the second emulsion captures metal particles polished from the semiconductor wafer. Thus, metal particles can be removed from the slurry during CMP to avoid damaging and/or contaminating the semiconductor wafer.
摘要翻译： CMP浆料包括具有连续水相和第二乳液的第一乳液。第一乳液包括研磨颗粒，第二乳液捕获从半导体晶片抛光的金属颗粒。因此，在CMP期间可以从浆料中除去金属颗粒，以避免损坏和/或污染半导体晶片。

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