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1. 发明授权

US6153452A Method of manufacturing semiconductor devices having improved polycide integrity through introduction of a silicon layer within the polycide structure 失效
标题翻译：通过在多晶硅化合物结构内引入硅层，制造具有改善的聚合物完整性的半导体器件的方法
公开(公告)号：US6153452A
公开(公告)日：2000-11-28
申请号：US782010
申请日：1997-01-07
申请人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy , Hem M. Vaidya
发明人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy , Hem M. Vaidya
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49
CPC分类号： H01L21/28061 , H01L21/823835 , H01L29/4933
摘要： Methods of manufacturing a semiconductor device. One method includes the steps of: (1) providing a substrate over which is to be deposited a metal silicide layer having a stoichiometric ratio within a desired range, (2) providing a target composed of a metal silicide, the target subject to degradation by reason of use, (3) sputtering atoms from the target to form the metal silicide layer over the substrate, the stoichiometric ratio subject to being without the desired range by reason of the degradation of the target and (4) depositing a predetermined amount of silicon on the metal silicide layer to return the stoichiometric ratio to within the desired range, a useful life of the target thereby increased.
摘要翻译：制造半导体器件的方法。一种方法包括以下步骤：（1）提供要在其上沉积化学计量比在所需范围内的金属硅化物层的衬底，（2）提供由金属硅化物组成的靶，靶由使用原因，（3）从靶上溅射原子以在衬底上形成金属硅化物层，化学计量比由于靶的劣化而不具有所需的范围，（4）沉积预定量的硅在金属硅化物层上以将化学计量比返回到所需范围内，从而靶的使用寿命增加。

2. 发明授权

US5489552A Multiple layer tungsten deposition process 失效
标题翻译：多层钨沉积工艺
公开(公告)号：US5489552A
公开(公告)日：1996-02-06
申请号：US366529
申请日：1994-12-30
申请人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy
发明人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy
IPC分类号： C23C4/06 , C23C26/00 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44 , H01L21/443
CPC分类号： H01L21/76838 , H01L21/28556
摘要： Tungsten plugs are formed in a manner which avoids the formation of unwanted tungsten volcanoes by depositing at least three and preferably five to seven layers of tungsten within a contact hole to form a layered plug. In particularly useful embodiments, the layers are deposited at alternating fast and slow rates of deposition.
摘要翻译：通过在接触孔内沉积至少三个，优选五至七层的钨以形成分层塞，避免形成不需要的钨火山的钨塞。在特别有用的实施方案中，以交替的快速和慢速沉积速率沉积这些层。

3. 发明授权

US5523259A Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer 失效
标题翻译：使用Ti纹理控制层形成作为子层的复合物的金属层的方法
公开(公告)号：US5523259A
公开(公告)日：1996-06-04
申请号：US349649
申请日：1994-12-05
申请人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy
发明人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5329 , H01L23/5226 , H01L2924/0002
摘要： In an integrated circuit, an opening (e.g., via or window) is filled with an Al-based plug which has essentially a orientation and comprises at most three grains. These characteristics are achieved by first depositing a texture control Ti layer having substantially a (002) basal plane orientation followed by at least three Al-based sublayers. The grain sizes and deposition conditions are controlled in such a way that during deposition of the third sublayer, the microstructure of the plug adjusts itself to produce a single grain (or at most three).
摘要翻译：在集成电路中，开口（例如，通孔或窗口）填充有基本上为111°取向且至多包含三个晶粒的Al-基塞。这些特性通过首先沉积具有基本上（002）基面平面取向的纹理控制Ti层，然后是至少三个基于Al的子层来实现。晶粒尺寸和沉积条件被控制为在沉积第三子层期间，插塞的微观结构自身调整以产生单个颗粒（或至多三个）。

4. 发明授权

US5599739A Barrier layer treatments for tungsten plug 失效
标题翻译：钨丝塞的阻隔层处理
公开(公告)号：US5599739A
公开(公告)日：1997-02-04
申请号：US366867
申请日：1994-12-30
申请人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy
发明人： Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy
IPC分类号： C23C16/06 , C23C26/00 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40 , H01L21/443
CPC分类号： H01L21/76876 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877
摘要： Tungsten plugs are formed by passivating a substrate having a contact hole with SiH.sub.4, forming a nucleation layer on the passivated substrate by reducing WF.sub.6 with SiH.sub.4 at relatively low pressures and depositing tungsten to substantially fill the contact hole by reducing WF.sub.6 with H.sub.2 at relatively high pressures. Alternatively, rapid thermal annealing is used to cure pinhole defects in a titanium nitride layer on a substrate to avoid the formation of unwanted tungsten volcanoes.
摘要翻译：通过钝化具有与SiH 4的接触孔的基板来形成钨插塞，通过在相对低的压力下用SiH 4还原WF 6并在相对较低的压力下通过用H 2还原WF 6沉积钨来基本上填充接触孔，在钝化的衬底上形成成核层。或者，使用快速热退火来固化衬底上的氮化钛层中的针孔缺陷，以避免形成不需要的钨火山。

5. 发明授权

US5561083A Method of making multilayered Al-alloy structure for metal conductors 失效
标题翻译：制造金属导体多层Al合金结构的方法
公开(公告)号：US5561083A
公开(公告)日：1996-10-01
申请号：US365652
申请日：1994-12-29
申请人： Cheryl A. Bollinger , Edward A. Dein , Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy , Cletus W. Wilkins, Jr.
发明人： Cheryl A. Bollinger , Edward A. Dein , Sailesh M. Merchant , Arun K. Nanda , Pradip K. Roy , Cletus W. Wilkins, Jr.
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/822 , H01L23/482 , H01L23/532 , H01L27/04 , H01L21/283
CPC分类号： H01L23/53223 , H01L23/4827 , H01L2224/04026 , H01L2924/01021 , H01L2924/10253
摘要： A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems. The selection of the thickness of the second sublayer to be a major portion and the inclusion of barrier layers are also described.
摘要翻译： Si IC包括Al基层，其被沉积为不同组成的Al基材料的亚层的复合物。在一个实施例中，第一子层包括Al-Si基合金，其被设置为防止实质的Si迁移到第一子层中，并且第一子层在第一子层之上包括基本上不含Si的Al基合金以减轻沉淀 - 引起的问题。还描述了选择第二子层的厚度作为主要部分并包含阻挡层。

6. 发明授权

US08084313B2 Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistor 有权
标题翻译：用于形成双极结型晶体管和金属氧化物半导体场效应晶体管的方法
公开(公告)号：US08084313B2
公开(公告)日：2011-12-27
申请号：US12832110
申请日：2010-07-08
申请人： Arun K. Nanda , Venkat Raghavan , Nace Rossi
发明人： Arun K. Nanda , Venkat Raghavan , Nace Rossi
IPC分类号： H01L21/8238
CPC分类号： H01L21/8249 , H01L27/0623
摘要： A method for forming BiCMOS integrated circuits and structures formed according to the method. After forming doped wells and gate stacks for the CMOS devices and collector and base regions for the bipolar junction transistor, an emitter layer is formed within an emitter window. A dielectric material layer is formed over the emitter layer and remains in place during etching of the emitter layer and removal of the etch mask. The dielectric material layer further remains in place during source/drain implant doping and activation of the implanted source/drain dopants. The dielectric material layer functions as a thermal barrier, to limit out-diffusion of the emitter dopants during the activation step.
摘要翻译：一种用于形成根据该方法形成的BiCMOS集成电路和结构的方法。在用于CMOS器件的掺杂阱和栅极堆叠以及用于双极结型晶体管的集电极和基极区域之后，在发射极窗口内形成发射极层。在发射极层上形成介电材料层，并且在蚀刻发射极层和去除蚀刻掩模期间保持原位。在源极/漏极注入掺杂和注入源极/漏极掺杂剂的激活期间，电介质材料层进一步保持就位。介电材料层用作热障，以限制在激活步骤期间发射体掺杂物的扩散。

7. 发明授权

US07945950B2 Generic interactive challenges in a distributed system 有权
标题翻译：分布式系统中的通用交互式挑战
公开(公告)号：US07945950B2
公开(公告)日：2011-05-17
申请号：US11925734
申请日：2007-10-26
申请人： Arun K. Nanda , Christopher G. Kaler , Tariq Sharif
发明人： Arun K. Nanda , Christopher G. Kaler , Tariq Sharif
IPC分类号： G06F7/04
CPC分类号： H04L63/08 , G06F21/31 , G06F2221/2103
摘要： A challenge mechanism in which a challenge is issued from one message processor to another. In generating the challenge, the message processor may select any one or more of a number of available interactive challenge types, where each type of challenge type might use different user-originated information. Upon receiving the challenge, the challengee message processor may identify the challenge type based on information provided in the challenge, and perform different actions depending on the challenge type. The challengee message processor then generates an appropriate challenge response, and issues that challenge response to the challenger message processor. The challenger message processor may then validate the challenge response.
摘要翻译：挑战机制，其中挑战是从一个消息处理器发出到另一个。在产生挑战时，消息处理器可以选择多个可用的交互式挑战类型中的任何一个或多个，其中每种类型的挑战类型可以使用不同的用户发起的信息。在接收到挑战时，挑战者消息处理器可以基于挑战中提供的信息识别挑战类型，并根据挑战类型执行不同的动作。挑战者消息处理器然后生成适当的挑战响应，并且向挑战者消息处理器发出挑战响应。挑战者消息处理器然后可以验证挑战响应。

8. 发明申请

US20100273301A1 THERMALLY STABLE BICMOS FABRICATION METHOD AND BIPOLAR JUNCTION TRNASISTORS FORMED ACCORDING TO THE METHOD 有权
标题翻译：根据该方法形成的热稳定的BICMOS制造方法和双极性连接器
公开(公告)号：US20100273301A1
公开(公告)日：2010-10-28
申请号：US12832110
申请日：2010-07-08
申请人： Arun K. Nanda , Venkat Raghavan , Nace Rossi
发明人： Arun K. Nanda , Venkat Raghavan , Nace Rossi
IPC分类号： H01L27/06
CPC分类号： H01L21/8249 , H01L27/0623
摘要： A method for forming BiCMOS integrated circuits and structures formed according to the method. After forming doped wells and gate stacks for the CMOS devices and collector and base regions for the bipolar junction transistor, an emitter layer is formed within an emitter window. A dielectric material layer is formed over the emitter layer and remains in place during etching of the emitter layer and removal of the etch mask. The dielectric material layer further remains in place during source/drain implant doping and activation of the implanted source/drain dopants. The dielectric material layer functions as a thermal barrier, to limit out-diffusion of the emitter dopants during the activation step.
摘要翻译：一种用于形成根据该方法形成的BiCMOS集成电路和结构的方法。在用于CMOS器件的掺杂阱和栅极堆叠以及用于双极结型晶体管的集电极和基极区域之后，在发射极窗口内形成发射极层。在发射极层上形成介电材料层，并且在蚀刻发射极层和去除蚀刻掩模期间保持原位。在源极/漏极注入掺杂和注入源极/漏极掺杂剂的激活期间，电介质材料层进一步保持就位。介电材料层用作热障，以限制在激活步骤期间发射体掺杂物的扩散。

9. 发明授权

US07739500B2 Method and system for consistent recognition of ongoing digital relationships 有权
标题翻译：持续确认数字关系的方法和系统
公开(公告)号：US07739500B2
公开(公告)日：2010-06-15
申请号：US11074972
申请日：2005-03-07
申请人： Kim Cameron , Arun K. Nanda , Andy Harjanto , Stuart L. S. Kwan
发明人： Kim Cameron , Arun K. Nanda , Andy Harjanto , Stuart L. S. Kwan
IPC分类号： H04L9/00
CPC分类号： H04L63/0823 , H04L9/3263 , H04L2209/56
摘要： Exemplary embodiments disclosed herein may include a method and system for creating an attendance marker and establishing consistent recognition of an ongoing digital relationship, including receiving an identity key about a server, creating an attendance marker, associating the attendance marker with the server. Other embodiments relate to systems and methods for recognizing a server, website, and/or other system for a client, such as a computer system for a user. Such authentication involves receiving an identity key about a web server or other system, creating an attendance marker, associating the attendance marker with the server, requesting an attendance marker associated with a server, and recognizing the server based at least in part on the attendance marker.
摘要翻译：本文公开的示例性实施例可以包括用于创建考勤标记并建立持续数字关系的一致性识别的方法和系统，包括接收关于服务器的身份密钥，创建考勤标记，将考勤标记与服务器相关联。其他实施例涉及用于识别用于客户端的服务器，网站和/或其他系统的系统和方法，诸如用于用户的计算机系统。这种认证涉及接收关于web服务器或其他系统的身份密钥，创建考勤标记，将考勤标记与服务器相关联，请求与服务器相关联的考勤标记，以及至少部分地基于考勤标记识别服务器。

10. 发明申请

US20090319795A1 DIGITALLY SIGNING DOCUMENTS USING IDENTITY CONTEXT INFORMATION 有权
标题翻译：使用身份识别信息的数字签名文件
公开(公告)号：US20090319795A1
公开(公告)日：2009-12-24
申请号：US12143392
申请日：2008-06-20
申请人： Tariq Sharif , Arun K. Nanda , Craig H. Wittenberg , Lucas R. Melton , Richard Randall , Kim Cameron , Hervey O. Wilson
发明人： Tariq Sharif , Arun K. Nanda , Craig H. Wittenberg , Lucas R. Melton , Richard Randall , Kim Cameron , Hervey O. Wilson
IPC分类号： H04L9/00
CPC分类号： G06F21/64 , G06F2221/2117 , H04L63/0823 , H04L63/123
摘要： Creating a token for use by an entity when digitally signing documents. In a computing environment, a digital identity representation for an entity is accessed. The digital identity representation includes information identifying identity attributes about the entity and capabilities of an identity provider that provides tokens for use by the entity. Context information is accessed. The context information includes information about one or more of which, how or where the attributes for the entity identified in the digital identity representation will be used. A security token is created from the information in the digital identity representation and the context information. The security token makes assertions by the identity provider. The assertions are based on the information in the digital identity representation. The token further includes information related to at least a portion of the context information.
摘要翻译：创建一个令牌供实体在数字签署文档时使用。在计算环境中，访问实体的数字身份表示。数字身份表示包括识别关于实体的身份属性的信息以及提供令牌以供实体使用的身份提供者的能力。访问上下文信息。上下文信息包括关于在数字身份表示中识别的实体的属性的一个或多个，如何或何处被使用的信息。根据数字身份表示和上下文信息中的信息创建安全令牌。安全令牌由身份提供者进行断言。断言是基于数字身份表示中的信息。令牌还包括与上下文信息的至少一部分相关的信息。

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