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1. 发明申请

US20120273136A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20120273136A1
公开(公告)日：2012-11-01
申请号：US13545422
申请日：2012-07-10
申请人： Manabu Edamura , Go Miya , Ken Yoshioka
发明人： Manabu Edamura , Go Miya , Ken Yoshioka
IPC分类号： C23F1/08 , C23C16/44
CPC分类号： H01J37/321
摘要： A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring.
摘要翻译：等离子体处理装置包括处理室，样品台，能够在处理室中产生等离子体的射频电源以及至少一个感应线圈。感应线圈通过连接多个相同的线圈元件而形成，使得相同的射频电压施加到多个相同的线圈元件中的每一个，并且相同的线圈元件的每个输入端以计算的角度的间隔移位通过将360°除以相同的线圈元件的数量。相同线圈元件的连续导体部分形成在环形圈的不同相邻表面上，并且被构造成一次彼此偏移预定角度，以沿着环形环的不同相邻表面的圆周方向延伸环形环。

2. 发明授权

US08232522B2 Semiconductor inspecting apparatus 有权
标题翻译：半导体检查装置
公开(公告)号：US08232522B2
公开(公告)日：2012-07-31
申请号：US13000461
申请日：2009-06-23
申请人： Go Miya , Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto
发明人： Go Miya , Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto
IPC分类号： H01J37/20
CPC分类号： H01L22/10 , H01J37/20 , H01J37/265 , H01J37/28 , H01J2237/0044 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.
摘要翻译：在通过半导体检查装置检查具有不同尺寸的样品的情况下，一次电子束弯曲，因为在检查样品附近时样品附近的等电位面上的分布受到干扰，所谓的产生位置偏移。将电位校正电极设置在样品外部和低于样品下表面的位置处，并且施加比样品低的电位。此外，对应于检查位置和样品外端之间的距离，样品厚度和一次电子束的照射条件来控制施加到电位校正电极的电压。

3. 发明授权

US07744721B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07744721B2
公开(公告)日：2010-06-29
申请号：US12567137
申请日：2009-09-25
申请人： Manabu Edamura , Go Miya , Ken Yoshioka
发明人： Manabu Edamura , Go Miya , Ken Yoshioka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage.
摘要翻译：一种等离子体处理装置，包括用于对象进行等离子体处理的处理室，气体入口，抽真空装置，用于物体的样品台，电源和至少一个感应线圈。所述至少一个感应线圈能够在处理室中产生等离子体，并且通过以并联电路状布置连接多个相同的线圈元件而形成，使得电流在相同方向上流过多个相同的线圈元件当从样品台观察时。

4. 发明授权

US07713756B2 Apparatus and method for plasma etching 失效
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US07713756B2
公开(公告)日：2010-05-11
申请号：US11735657
申请日：2007-04-16
申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： H01L21/00 , H01L21/302 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
摘要翻译：一种用于等离子体蚀刻装置的等离子体蚀刻方法，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体供应源; 第二气体供应源; 用于将处理气体引入处理室的第一气体入口; 用于将处理气体引入所述处理室的第二气体入口; 用于调节处理气体的流量的流量调节器; 以及用于将所述第一处理气体分成多个部分的气体分流器，其中所述第二处理气体与所述气体分流器和所述第一气体入口之间以及所述气体分流器和所述第二气体入口之间的至少一部分合并。

5. 发明申请

US20100078130A1 Plasma Processing Apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20100078130A1
公开(公告)日：2010-04-01
申请号：US12567137
申请日：2009-09-25
申请人： Manabu Edamura , Go Miya , Ken Yoshioka
发明人： Manabu Edamura , Go Miya , Ken Yoshioka
IPC分类号： C23F1/00
CPC分类号： H01J37/321
摘要： A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage.
摘要翻译：一种等离子体处理装置，包括用于对象进行等离子体处理的处理室，气体入口，抽真空装置，用于物体的样品台，电源和至少一个感应线圈。所述至少一个感应线圈能够在处理室中产生等离子体，并且通过以并联电路状布置连接多个相同的线圈元件而形成，使得电流在相同方向上流过多个相同的线圈元件当从样品台观察时。

6. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

7. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

8. 发明授权

US07147748B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07147748B2
公开(公告)日：2006-12-12
申请号：US10779742
申请日：2004-02-18
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.
摘要翻译：一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置具有其中对基板进行等离子体处理的处理室，受光部，光谱仪单元，运算单元，数据库，确定单元，用于确定终点调味料作为处理室的条件，以及设备控制器。该方法包括以下步骤：将从光谱仪单元输出的多通道信号转换为一批输出信号，发现前一批次的输出信号和输出信号之间的差异，确定一批中的差异的平均值，一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将确定的值与预设阈值进行比较。

9. 发明授权

US08653455B2 Charged particle beam device and evaluation method using the charged particle beam device 有权
标题翻译：带电粒子束装置和使用带电粒子束装置的评估方法
公开(公告)号：US08653455B2
公开(公告)日：2014-02-18
申请号：US13375085
申请日：2010-06-03
申请人： Hiroyuki Kitsunai , Seiichiro Kanno , Masaru Matsushima , Shuichi Nakagawa , Go Miya
发明人： Hiroyuki Kitsunai , Seiichiro Kanno , Masaru Matsushima , Shuichi Nakagawa , Go Miya
IPC分类号： G01N23/00
CPC分类号： H01L21/6831 , H01J37/145 , H01J37/28 , H01J2237/2817 , H01L22/12
摘要： The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.
摘要翻译：带电粒子束装置具有在试样的外边缘附近等待电位分布的对称性被扰乱的问题，被评估的物体导致带电粒子束在那里偏转。安装在静电吸引型的检体保持机构内的电极板由同心配置的内外电极板形成。外电极板的外径大于样品的外径。确定电极板的尺寸，使得外部电极板和试样的重叠面积基本上等于内部电极板的面积。内部电极板相对于参考电压和任意大小施加正极性的电压，并且外部电极施加负极性和任意大小的电压。

10. 发明申请

US20120186745A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120186745A1
公开(公告)日：2012-07-26
申请号：US13035159
申请日：2011-02-25
申请人： Go MIYA , Masaru Izawa , Takumi Tandou
发明人： Go MIYA , Masaru Izawa , Takumi Tandou
IPC分类号： C23F1/08
CPC分类号： H01L21/67109 , H01J37/32715 , H01J37/32724
摘要： Provided is a plasma processing apparatus in which accuracy or reliability of processing is improved. This plasma processing apparatus includes a sample stage in a processing chamber arranged in a vacuum vessel and in which plasma is generated. The sample stage has a cylindrical shape and operates as an evaporator through which a refrigerant of a refrigerating cycle flows. Further, the apparatus includes refrigerant passages which are concentrically arranged inside of the sample stage, one or more detectors which detect vibrations of the sample stage, and an control unit which controls a temperature of the refrigerant flowing into the sample stage based on detection results of a dryness of the refrigerant flowing through the passages obtained from an output of the detectors.
摘要翻译：提供了一种提高了处理精度或可靠性的等离子体处理装置。这种等离子体处理装置包括设置在真空容器中并且产生等离子体的处理室中的样品台。样品台具有圆筒形状并作为制冷循环的制冷剂流过的蒸发器运行。此外，该装置包括同心地布置在样品台内部的制冷剂通道，一个或多个检测样品台的振动的检测器，以及控制单元，其根据检测结果控制流入样品台的制冷剂的温度流过从检测器的输出获得的通道的制冷剂的干燥。

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