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    • 1. 发明授权
    • Motion compensation system and method for lithography
    • 运动补偿系统及光刻方法
    • US06556279B1
    • 2003-04-29
    • US09933583
    • 2001-08-20
    • Dan MeisburgerDavid A. Markle
    • Dan MeisburgerDavid A. Markle
    • G03B2772
    • G03F7/70725G03F7/70041G03F7/70225G03F7/70425G03F7/7055G03F7/70558
    • A system and method of compensating for image smear that arises when imaging onto a moving workpiece with a single pulse of radiation. The system includes a mask frame capable of supporting a mask to be imaged. The mask frame is operatively connected to a drive unit and is capable of moving in the mask plane. The mask frame is driven in an oscillatory fashion in the mask plane so that when a pulse of radiation illuminates the mask, the mask image moves in the same direction as the moving workpiece, thereby reducing image smear. The present invention is particularly applicable to single-pulse-exposure systems that utilize pulsed radiation sources having relatively long pulse duration, such as flash-lamps or certain types of lasers.
    • 一种系统和方法,用于补偿当用单一脉冲的辐射成像到移动的工件上时产生的图像污迹。 该系统包括能够支持要成像的掩模的掩模框架。 掩模框架可操作地连接到驱动单元并且能够在掩模平面中移动。 掩模框架以振荡方式在掩模平面中驱动,使得当辐射脉冲照射掩模时,掩模图像沿与移动的工件相同的方向移动,从而减少图像污迹。 本发明特别适用于利用具有较长脉冲持续时间的脉冲辐射源的单脉冲曝光系统,例如闪光灯或某些类型的激光器。
    • 3. 发明授权
    • Lithography system and method for device manufacture
    • 光刻系统和器件制造方法
    • US06753947B2
    • 2004-06-22
    • US09854226
    • 2001-05-10
    • Dan MeisburgerDavid A. Markle
    • Dan MeisburgerDavid A. Markle
    • G03B2772
    • G03F7/70725G03F7/70041G03F7/70225G03F7/70425G03F7/7055G03F7/70558
    • A lithography system and method for cost-effective device manufacture that can employ a continuous lithography mode of operation is disclosed, wherein exposure fields are formed with single pulses of radiation. The system includes a pulsed radiation source (14), an illumination system (24), a mask (M), a projection lens (40) and a workpiece stage (50) that supports a workpiece (W) having an image-bearing surface (WS). A radiation source controller (16) and a workpiece stage position system (60), which includes a metrology device (62), are used to coordinate and control the exposure of the mask with radiation pulses so that adjacent radiation pulses form adjacent exposure fields (EF). Where pulse-to-pulse uniformity from the radiation source is lacking, a pulse stabilization system (18) may be optionally used to attain the desired pulse-to-pulse uniformity in exposure dose. The rapidity at which exposures can be made using a single radiation pulse allows for a very high throughput, which in turn allows for a small-image-field projection lens to be utilized in a cost-effective manner in the manufacture of devices such as semiconductor integrated circuits and the like. The system can also be used in the conventional “step-and-repeat” mode of operation, so that the system owner can decide the most cost-effective mode of operation for any given application.
    • 公开了一种可采用连续光刻操作模式的具有成本效益的器件制造的光刻系统和方法,其中曝光场由单个辐射脉冲形成。 该系统包括支撑具有图像承载表面的工件(W)的脉冲辐射源(14),照明系统(24),掩模(M),投影透镜(40)和工件台(50) (WS)。 使用辐射源控制器(16)和包括测量装置(62)的工件台位置系统(60)来协调和控制具有辐射脉冲的掩模的曝光,使得相邻辐射脉冲形成相邻的曝光场( EF)。 在缺少来自辐射源的脉冲 - 脉冲均匀性的情况下,可以可选地使用脉冲稳定系统(18)来获得曝光剂量期望的脉冲 - 脉冲均匀性。 可以使用单个辐射脉冲进行曝光的速度允许非常高的通量,这进而允许在制造诸如半导体的器件中以成本有效的方式利用小图像场投影透镜 集成电路等。 该系统也可以用于传统的“重复步骤”操作模式,以便系统所有者可以为任何给定的应用程序决定最具成本效益的操作模式。
    • 4. 发明授权
    • Inspecting optical masks with electron beam microscopy
    • 用电子束显微镜检查光学掩模
    • US5665968A
    • 1997-09-09
    • US607191
    • 1996-02-26
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. JauBrian J. Grenon
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. JauBrian J. Grenon
    • H01J37/28H01J37/30H01J37/26
    • H01J37/28H01J37/3005H01J2237/2817
    • There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
    • 公开了一种通过光学相移掩模扫描电子束并自动检查掩模以确定相移掩模的特征和缺陷分类的装置。 电子束指向掩模的表面以扫描该掩模,并且提供检测器以从掩模的表面测量次级和背散射带电粒子。 掩模安装在x-y平台上,以在掩模被电子束扫描时提供至少一个自由度。 通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征,可以检测掩模的各种物理特征以及它们的尺寸和位置。 也可以确定铬层的厚度。 在检查配置中,还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。
    • 5. 发明授权
    • Inspecting optical masks with electron beam microscopy
    • 用电子束显微镜检查光学掩模
    • US5717204A
    • 1998-02-10
    • US606854
    • 1996-02-26
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. Jau
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. Jau
    • H01J37/28H01J37/30H01J37/26
    • H01J37/28H01J37/3005H01J2237/2817
    • An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
    • 一种装置通过光学相移掩模扫描电子束,并自动检查掩模以确定相移掩模的特征和缺陷的分类。 电子束指向掩模的表面以扫描该掩模,并且提供检测器以从掩模的表面测量次级和背散射带电粒子。 掩模安装在x-y平台上,以在掩模被电子束扫描时提供至少一个自由度。 通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征,可以检测掩模的各种物理特征以及它们的尺寸和位置。 也可以确定铬层的厚度。 在检查配置中,还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。