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1. 发明专利

IL178857D0 A SYSTEM AND METHOD FOR PHOTOLITHOGRAPHY IN SEMICONDUCTOR MANUFACTURING 未知
公开(公告)号：IL178857D0
公开(公告)日：2007-03-08
申请号：IL17885706
申请日：2006-10-25
申请人： TAIWAN SEMICONDUCTOR MFG , CHIN HSIANG LIN , KUEI SHUN CHEN , TSAI SHENG GAU , CHUN KUANG CHEN , HSIAO TZU LU , FU JYE LIANG
摘要： The method involves providing a substrate, and coating a photo resist layer on the substrate. The substrate is exposed by utilizing a combination of high angle illumination and focus drift exposure methods. A circular area is formed within an illumination area. A torus-shaped area is formed immediately adjacent to the circular area and within the illumination area. Another torus-shaped area is formed that is not adjacent to the circular area and is within the illumination area. The focus drift exposure method comprises titling the substrate. Independent claims are also included for the following: (1) a photolithography system for processing a semiconductor wafer (2) a method for patterning a semiconductor substrate.

2. 发明申请

US20130147354A1 ILLUMINATION CONTROLLING CIRCUIT AND ILLUMINATION SYSTEM 有权
标题翻译：照明控制电路和照明系统
公开(公告)号：US20130147354A1
公开(公告)日：2013-06-13
申请号：US13531603
申请日：2012-06-25
申请人： Chun-Kuang CHEN , Po-Shen CHEN , Feng-Ling LIN , Hui-Ying CHEN
发明人： Chun-Kuang CHEN , Po-Shen CHEN , Feng-Ling LIN , Hui-Ying CHEN
IPC分类号： H05B37/00
CPC分类号： H05B39/044 , H05B33/0845
摘要： The invention discloses an illumination controlling circuit coupled between a household electricity input and an illumination lamp. The illumination controlling circuit includes a dimmer module, a sampling-and-holding circuit, a differential circuit, an integrator circuit and a clamping circuit. The dimmer circuit is used for generating a dimming signal which includes a plurality of waveform pulses. The sampling-and-holding circuit samples from the dimming signal, so as to obtain an average waveform pulse. The differential circuit is used for extracting a voltage difference of the average waveform pulse. The integrator circuit performs integration on the average waveform pulse according to the voltage difference, so as to generate a direct current voltage signal. When a level of the direct current voltage signal exceeds a threshold voltage level of the clamping circuit, the direct current voltage signal is used for driving the illumination lamp.
摘要翻译：本发明公开了一种照明控制电路，其耦合在家用电力输入和照明灯之间。照明控制电路包括调光器模块，采样保持电路，差分电路，积分器电路和钳位电路。调光电路用于产生包括多个波形脉冲的调光信号。采样保持电路从调光信号中采样，以获得平均波形脉冲。差分电路用于提取平均波形脉冲的电压差。积分器电路根据电压差对平均波形脉冲进行积分，以产生直流电压信号。当直流电压信号的电平超过钳位电路的阈值电压电平时，直流电压信号用于驱动照明灯。

3. 发明授权

US08227150B2 Holographic reticle and patterning method 有权
标题翻译：全息掩模版和图案化方法
公开(公告)号：US08227150B2
公开(公告)日：2012-07-24
申请号：US12768405
申请日：2010-04-27
申请人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
发明人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/14 , G03F1/50 , G03F7/70283 , G03F7/70416 , G03H1/0005 , G03H1/0244 , G03H1/08 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。这些三维图案可以被填充以形成三维结构，或者用于多表面成像组合物中。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

4. 发明申请

US20110212403A1 METHOD AND APPARATUS FOR ENHANCED DIPOLE LITHOGRAPHY 审中-公开
标题翻译：用于增强DIPOLE LITHOGRAPHY的方法和装置
公开(公告)号：US20110212403A1
公开(公告)日：2011-09-01
申请号：US12713335
申请日：2010-02-26
申请人： Ming-Jhih Kuo , Chun-Kuang Chen , Ya Hui Chang , Tommy Kuo , Hsien-Cheng Wang , Ko-Bin Kao
发明人： Ming-Jhih Kuo , Chun-Kuang Chen , Ya Hui Chang , Tommy Kuo , Hsien-Cheng Wang , Ko-Bin Kao
IPC分类号： G03F7/20 , G03B27/54
CPC分类号： G03B27/54 , G03F7/70108
摘要： Provided is a lithography system that includes a source for providing energy, an imaging system configured to direct the energy onto a substrate to form an image thereon, and a diffractive optical element (DOE) incorporated with the imaging system, the DOE having a first dipole located in a first direction and a second dipole located in the first direction or a second direction perpendicular the first direction. The first dipole includes a first energy-transmitting region spaced a first distance from a center of the DOE. The second dipole includes a second energy-transmitting region spaced a second distance from the center of the DOE. The first distance is greater than the second distance.
摘要翻译：提供了一种包括用于提供能量的源的光刻系统，被配置为将能量引导到衬底上以在其上形成图像的成像系统，以及结合有成像系统的衍射光学元件（DOE），DOE具有第一偶极子位于第一方向上，第二偶极位于第一方向或垂直于第一方向的第二方向。第一偶极子包括与DOE的中心间隔开第一距离的第一能量传输区域。第二偶极子包括与DOE的中心隔开第二距离的第二能量传输区域。第一距离大于第二距离。

5. 发明申请

US20110193202A1 METHODS TO ACHIEVE 22 NANOMETER AND BEYOND WITH SINGLE EXPOSURE 审中-公开
标题翻译：实现22纳米微粒的方法，并且单次曝光
公开(公告)号：US20110193202A1
公开(公告)日：2011-08-11
申请号：US12701104
申请日：2010-02-05
申请人： Vincent Yu , Shih-Che Wang , Chun-Kuang Chen
发明人： Vincent Yu , Shih-Che Wang , Chun-Kuang Chen
IPC分类号： H01L29/06 , G03F7/20
CPC分类号： G03F1/22 , G03F1/20 , G03F1/32 , G03F7/325
摘要： Apparatus and methods are disclosed herein for fabricating semiconductor device features with a half-pitch node of 22 nm and beyond using single exposure and single etch (1P1E) photolithography techniques. The method includes exposing in a single exposure a photoresist layer to the exposure source through a photolithography mask where the photolithography mask has on it an island pattern of a material having high percentage transmission. The photoresist layer is developed using a negative tone developer to form a hole pattern in the photoresist layer. The 1P1E does not require the second photo exposure of the double patterning method. Furthermore, the method circumvents the island pattern collapsing issues and the need for strong illumination associated with exiting single 1P1E processes.
摘要翻译：本文公开了用于制造半导体器件特征的装置和方法，其半节距节点为22nm，并且超过使用单次曝光和单蚀刻（1P1E）光刻技术。该方法包括通过光刻掩膜将光致抗蚀剂层暴露于曝光源到曝光源，光刻掩模在其上具有透光率高的材料的岛状图案。使用负色调显影剂显影光致抗蚀剂层以在光致抗蚀剂层中形成孔图案。 1P1E不需要双重图案化方法的第二次曝光。此外，该方法避免了岛屿模式的崩溃问题以及与退出单个1P1E过程相关的强烈照明的需求。

6. 发明申请

US20100297538A1 Holographic Reticle and Patterning Method 有权
标题翻译：全息光罩和图案化方法
公开(公告)号：US20100297538A1
公开(公告)日：2010-11-25
申请号：US12768405
申请日：2010-04-27
申请人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
发明人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/14 , G03F1/50 , G03F7/70283 , G03F7/70416 , G03H1/0005 , G03H1/0244 , G03H1/08 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。这些三维图案可以被填充以形成三维结构，或者用于多表面成像组合物中。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

7. 发明授权

US07675604B2 Hood for immersion lithography 有权
标题翻译：用于浸没光刻的罩
公开(公告)号：US07675604B2
公开(公告)日：2010-03-09
申请号：US11427434
申请日：2006-06-29
申请人： Li-Jui Chen , Tzung-Chi Fu , Ching-Yu Chang , Fu-Jye Liang , Lin-Hung Shiu , Chun-Kuang Chen , Tsai-Sheng Gau
发明人： Li-Jui Chen , Tzung-Chi Fu , Ching-Yu Chang , Fu-Jye Liang , Lin-Hung Shiu , Chun-Kuang Chen , Tsai-Sheng Gau
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G03F7/70341
摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least two of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要翻译：光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。所述加热元件包括以下至少两个：对所述流体不溶的密封剂，用于密封所述流体保持模块中的所述加热元件; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

8. 发明申请

US20070258060A1 HOOD FOR IMMERSION LITHOGRAPHY 有权
标题翻译：假设沉默
公开(公告)号：US20070258060A1
公开(公告)日：2007-11-08
申请号：US11427434
申请日：2006-06-29
申请人： Li-Jui CHEN , Tzung-Chi FU , Ching-Yu CHANG , Fu-Jye LIANG , Lin-Hung SHIU , Chun-Kuang CHEN , Tsai-Sheng GAU
发明人： Li-Jui CHEN , Tzung-Chi FU , Ching-Yu CHANG , Fu-Jye LIANG , Lin-Hung SHIU , Chun-Kuang CHEN , Tsai-Sheng GAU
IPC分类号： G03B27/52
CPC分类号： G03F7/70341
摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least one of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要翻译：光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。所述加热元件包括以下至少一种：不溶于所述流体以密封所述流体保持模块中的所述加热元件的密封剂; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

9. 发明申请

US20060083997A1 Photomask with wavelength reduction material and pellicle 审中-公开
标题翻译：具有波长还原材料和防护薄膜的光掩模
公开(公告)号：US20060083997A1
公开(公告)日：2006-04-20
申请号：US11248070
申请日：2005-10-12
申请人： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
发明人： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
IPC分类号： A47G1/12 , G03F1/14 , G03F1/00
CPC分类号： G03F1/38
摘要： Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.
摘要翻译：公开了一种光掩模，其包括透明基板，靠近透明基板的吸收层和靠近透明基板安装的防护薄膜组件。吸收层具有形成在其中的至少一个开口用于接收波长减小材料（WRM）。波长减小材料和吸收层形成大致平坦的表面。

10. 发明授权

US08563198B2 Device and method for providing wavelength reduction with a photomask 有权
标题翻译：用光掩模提供波长缩小的装置和方法
公开(公告)号：US08563198B2
公开(公告)日：2013-10-22
申请号：US13160231
申请日：2011-06-14
申请人： Burn Jeng Lin , Jeng Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
发明人： Burn Jeng Lin , Jeng Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
IPC分类号： G03F1/46 , G03F1/48
CPC分类号： G03F1/50 , G03F1/46
摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.
摘要翻译：公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

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