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1. 发明申请

US20110193202A1 METHODS TO ACHIEVE 22 NANOMETER AND BEYOND WITH SINGLE EXPOSURE 审中-公开
标题翻译：实现22纳米微粒的方法，并且单次曝光
公开(公告)号：US20110193202A1
公开(公告)日：2011-08-11
申请号：US12701104
申请日：2010-02-05
申请人： Vincent Yu , Shih-Che Wang , Chun-Kuang Chen
发明人： Vincent Yu , Shih-Che Wang , Chun-Kuang Chen
IPC分类号： H01L29/06 , G03F7/20
CPC分类号： G03F1/22 , G03F1/20 , G03F1/32 , G03F7/325
摘要： Apparatus and methods are disclosed herein for fabricating semiconductor device features with a half-pitch node of 22 nm and beyond using single exposure and single etch (1P1E) photolithography techniques. The method includes exposing in a single exposure a photoresist layer to the exposure source through a photolithography mask where the photolithography mask has on it an island pattern of a material having high percentage transmission. The photoresist layer is developed using a negative tone developer to form a hole pattern in the photoresist layer. The 1P1E does not require the second photo exposure of the double patterning method. Furthermore, the method circumvents the island pattern collapsing issues and the need for strong illumination associated with exiting single 1P1E processes.
摘要翻译：本文公开了用于制造半导体器件特征的装置和方法，其半节距节点为22nm，并且超过使用单次曝光和单蚀刻（1P1E）光刻技术。该方法包括通过光刻掩膜将光致抗蚀剂层暴露于曝光源到曝光源，光刻掩模在其上具有透光率高的材料的岛状图案。使用负色调显影剂显影光致抗蚀剂层以在光致抗蚀剂层中形成孔图案。 1P1E不需要双重图案化方法的第二次曝光。此外，该方法避免了岛屿模式的崩溃问题以及与退出单个1P1E过程相关的强烈照明的需求。

2. 发明授权

US08383322B2 Immersion lithography watermark reduction 有权
标题翻译：浸没光刻水印缩减
公开(公告)号：US08383322B2
公开(公告)日：2013-02-26
申请号：US11427017
申请日：2006-06-28
申请人： Ching-Yu Chang , Vincent Yu
发明人： Ching-Yu Chang , Vincent Yu
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , G03F7/70341
摘要： A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to neutralize the effect of undesired elements that diffused into the resist layer during the immersion exposure. After treatment, a post-exposure bake and a development step are used.
摘要翻译：在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。浸没式光刻曝光系统在曝光期间利用流体，并且可以在曝光后能够去除一些但不是全部的流体。曝光后，使用处理工艺来中和在浸没曝光期间扩散到抗蚀剂层中的不期望的元素的影响。处理后，使用曝光后烘烤和显影步骤。

3. 发明授权

US07691559B2 Immersion lithography edge bead removal 有权
标题翻译：浸没光刻边缘珠去除
公开(公告)号：US07691559B2
公开(公告)日：2010-04-06
申请号：US11337986
申请日：2006-01-24
申请人： Ching-Yu Chang , C. C. Ke , Vincent Yu
发明人： Ching-Yu Chang , C. C. Ke , Vincent Yu
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/162 , G03F7/168 , G03F7/70341 , H01L21/67051 , H01L21/6708 , H01L21/6715
摘要： A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
摘要翻译：提供了在半导体晶片上进行浸渍光刻的方法。该方法包括在半导体晶片的表面上提供一层抗蚀剂。接下来，边缘珠去除过程以大于1000转/分钟的速度旋转晶片，并且在晶片旋转时通过喷嘴分配溶剂。然后，使用浸没式光刻曝光系统曝光抗蚀剂层。

4. 外观设计

USD854143S1 Cooling fan 有权
公开(公告)号：USD854143S1
公开(公告)日：2019-07-16
申请号：US29628586
申请日：2017-12-06
申请人： Vincent Yu
设计人： Vincent Yu
摘要： FIG. 1 is a front-right-top perspective view of the cooling fan showing my new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is a another perspective view thereof; and,
FIG. 9 is a perspective view thereof shown in a position of use.
The broken lines illustrate portions of the cooling fan which form no part of the claimed design.

5. 外观设计

USD681440S1 Pipe clamp 有权
公开(公告)号：USD681440S1
公开(公告)日：2013-05-07
申请号：US29393073
申请日：2011-05-31
申请人： Vincent Yu
设计人： Vincent Yu

6. 外观设计

USD674058S1 Pipe connector without threaded structures 有权
标题翻译：不带螺纹结构的管接头
公开(公告)号：USD674058S1
公开(公告)日：2013-01-08
申请号：US29419788
申请日：2012-05-01
申请人： Vincent Yu
设计人： Vincent Yu

7. 发明申请

US20090103068A1 EXPOSURE APPARATUS AND METHOD FOR PHOTOLITHOGRAPHY PROCESS 有权
标题翻译：曝光装置和光刻方法
公开(公告)号：US20090103068A1
公开(公告)日：2009-04-23
申请号：US11875471
申请日：2007-10-19
申请人： Vincent Yu , Hsien-Cheng Wang , Hung-Chang Hsieh
发明人： Vincent Yu , Hsien-Cheng Wang , Hung-Chang Hsieh
IPC分类号： G03B27/34 , G06F19/00
CPC分类号： G03F7/70833 , G03F7/70258 , G03F7/70641 , G03F7/70858
摘要： Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided.
摘要翻译：提供一种包括可变聚焦装置的曝光装置。可变聚焦装置可以包括可能在存在电场的情况下变形的透明膜。透明膜的变形可以允许改变辐射束的聚焦长度。在一个实施例中，可调制可变聚焦装置，使得具有第一聚焦长度的辐射束用于曝光目标上的第一位置，并且为曝光目标上的第二位置提供具有第二焦距的辐射束。还提供了一种方法和计算机可读介质。

8. 外观设计

USD570988S1 Heat exchanger 有权
标题翻译：热交换器
公开(公告)号：USD570988S1
公开(公告)日：2008-06-10
申请号：US29302572
申请日：2008-01-18
申请人： David M. Cink , Vincent Yu , Kenneth C. Gehring
设计人： David M. Cink , Vincent Yu , Kenneth C. Gehring

9. 发明申请

US20070003879A1 Immersion lithography edge bead removal 有权
标题翻译：浸没光刻边缘珠去除
公开(公告)号：US20070003879A1
公开(公告)日：2007-01-04
申请号：US11337986
申请日：2006-01-24
申请人： Ching-Yu Chang , C.C. Ke , Vincent Yu
发明人： Ching-Yu Chang , C.C. Ke , Vincent Yu
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , G03F7/162 , G03F7/168 , G03F7/70341 , H01L21/67051 , H01L21/6708 , H01L21/6715
摘要： A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
摘要翻译：提供了在半导体晶片上进行浸渍光刻的方法。该方法包括在半导体晶片的表面上提供一层抗蚀剂。接下来，边缘珠去除过程以大于1000转/分钟的速度旋转晶片，并且在晶片旋转时通过喷嘴分配溶剂。然后，使用浸没式光刻曝光系统曝光抗蚀剂层。

10. 发明授权

US09179388B2 Methods, apparatus and system for handover of UE 有权
标题翻译： UE切换的方法，装置和系统
公开(公告)号：US09179388B2
公开(公告)日：2015-11-03
申请号：US13979835
申请日：2011-01-25
申请人： Vincent Yu , Field Liu
发明人： Vincent Yu , Field Liu
IPC分类号： H04W36/30 , H04W36/32
CPC分类号： H04W36/32
摘要： The present invention discloses a method for handover of User Equipment (UE) a service connection being made via the UE, comprises: if fast cells are set up as base stations starts up, handover from a normal cell to a first fast cell with a radio bearer set up therein when the UE moving speed exceeds a threshold, set up a same radio bearer at a current fast cell as the radio bearer set up at the first fast cell when the UE is leaving the first fast cell for the current fast cell adjacent to the first fast cell, release the radio bearer at the first fast cell after the UE leaves the first fast cell, and re-registering into an adjacent normal cell when the service connection is terminated, or handover to the adjacent normal cell from the current fast cell when the measured moving speed of the UE is below the threshold.
摘要翻译：本发明公开了一种用户设备（UE）通过UE进行业务连接切换的方法，包括：如果快速小区作为基站启动建立，则从正常小区切换到具有无线电的第一快速小区当UE移动速度超过阈值时，在UE移动速度超过阈值时建立承载，在当前快速小区离开第一个快速小区时，在当前快速小区建立与第一个快速小区建立的无线承载相同的无线承载到第一快速小区，在UE离开第一快速小区之后，在第一快速小区释放无线承载，并且当业务连接终止时重新登记到相邻的正常小区，或从当前的切换到相邻的正常小区当UE的测量移动速度低于阈值时，快速小区。

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