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1. 发明申请

US20060083997A1 Photomask with wavelength reduction material and pellicle 审中-公开
标题翻译：具有波长还原材料和防护薄膜的光掩模
公开(公告)号：US20060083997A1
公开(公告)日：2006-04-20
申请号：US11248070
申请日：2005-10-12
申请人： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
发明人： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
IPC分类号： A47G1/12 , G03F1/14 , G03F1/00
CPC分类号： G03F1/38
摘要： Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.
摘要翻译：公开了一种光掩模，其包括透明基板，靠近透明基板的吸收层和靠近透明基板安装的防护薄膜组件。吸收层具有形成在其中的至少一个开口用于接收波长减小材料（WRM）。波长减小材料和吸收层形成大致平坦的表面。

2. 发明授权

US07659964B2 Level adjustment systems and adjustable pin chuck thereof 失效
标题翻译：液位调节系统及其可调针式卡盘
公开(公告)号：US07659964B2
公开(公告)日：2010-02-09
申请号：US11390944
申请日：2006-03-28
申请人： Burn-Jeng Lin , Tsai-Sheng Gau , Jeng-Horng Chen
发明人： Burn-Jeng Lin , Tsai-Sheng Gau , Jeng-Horng Chen
IPC分类号： G03B27/58
CPC分类号： H01L21/6838 , H01L21/67259 , H01L21/67288 , H01L21/68742
摘要： A level adjustment system. The level adjustment system includes an adjustable pin chuck, an evacuation device, a level detection device and a length control device. The adjustable pin chuck includes a base and a variable pin to support a substrate. The base includes a recess and an evacuation channel connected thereto. The variable pin is disposed in the recess. The evacuation device is connected to the evacuation channel to evacuate the recess, such that the substrate is attached to the base and variable pin. The level detection device is disposed on the adjustable pin chuck to detect the horizontality of a target surface of the substrate. The length control device is electrically connected to the level detection device and variable pin. The length control device changes the length of the variable pin to adjust level of the target surface of the substrate according to the detected horizontality.
摘要翻译：水平调整系统。液位调节系统包括可调节销卡盘，排气装置，液位检测装置和长度控制装置。可调销卡盘包括基座和可变销以支撑基板。基座包括与其连接的凹部和排气通道。可变销设置在凹槽中。排气装置连接到排气通道以排出凹部，使得基板附接到基座和可变销。电平检测装置设置在可调节销卡盘上以检测基板的目标表面的水平度。长度控制装置电连接到电平检测装置和可变引脚。长度控制装置根据检测到的水平度改变可变销的长度，以调整基板的目标表面的水平。

3. 发明申请

US20090268184A1 System and Method for Direct Writing to a Wafer 有权
标题翻译：直接写入晶片的系统和方法
公开(公告)号：US20090268184A1
公开(公告)日：2009-10-29
申请号：US12203494
申请日：2008-09-03
申请人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
发明人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
IPC分类号： G03B27/54
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.
摘要翻译：提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器沿轴扫描。宽度在与轴不同的方向。

4. 发明申请

US20070236857A1 Level adjustment systems and adjustable pin chuck thereof 失效
标题翻译：液位调节系统及其可调节销卡盘
公开(公告)号：US20070236857A1
公开(公告)日：2007-10-11
申请号：US11390944
申请日：2006-03-28
申请人： Burn-Jeng Lin , Tsai-Sheng Gau , Jeng-Horng Chen
发明人： Burn-Jeng Lin , Tsai-Sheng Gau , Jeng-Horng Chen
IPC分类号： H01T23/00
CPC分类号： H01L21/6838 , H01L21/67259 , H01L21/67288 , H01L21/68742
摘要： A level adjustment system. The level adjustment system includes an adjustable pin chuck, an evacuation device, a level detection device and a length control device. The adjustable pin chuck includes a base and a variable pin to support a substrate. The base includes a recess and an evacuation channel connected thereto. The variable pin is disposed in the recess. The evacuation device is connected to the evacuation channel to evacuate the recess, such that the substrate is attached to the base and variable pin. The level detection device is disposed on the adjustable pin chuck to detect the horizontality of a target surface of the substrate. The length control device is electrically connected to the level detection device and variable pin. The length control device changes the length of the variable pin to adjust level of the target surface of the substrate according to the detected horizontality.
摘要翻译：水平调整系统。液位调节系统包括可调节销卡盘，排气装置，液位检测装置和长度控制装置。可调销卡盘包括基座和可变销以支撑基板。底座包括与其连接的凹部和排气通道。可变销设置在凹部中。排气装置连接到排气通道以排出凹部，使得基板附接到基座和可变销。电平检测装置设置在可调节销卡盘上以检测基板的目标表面的水平度。长度控制装置电连接到电平检测装置和可变引脚。长度控制装置根据检测到的水平度改变可变销的长度，以调整基板的目标表面的水平。

5. 发明授权

US07851774B2 System and method for direct writing to a wafer 有权
标题翻译：用于直接写入晶片的系统和方法
公开(公告)号：US07851774B2
公开(公告)日：2010-12-14
申请号：US12203494
申请日：2008-09-03
申请人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
发明人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
IPC分类号： H01J49/44
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.
摘要翻译：提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器沿轴扫描。宽度在与轴不同的方向。

6. 发明授权

US08507159B2 Electron beam data storage system and method for high volume manufacturing 有权
标题翻译：电子束数据存储系统和大批量生产方法
公开(公告)号：US08507159B2
公开(公告)日：2013-08-13
申请号：US13049123
申请日：2011-03-16
申请人： Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G03F9/00
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/36 , G03F7/2037 , H01J37/3174 , H01J2237/063 , H01J2237/31762 , H01J2237/31764 , Y10S430/143
摘要： The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.
摘要翻译：本公开提供了带电粒子束数据存储系统和方法的许多不同实施例。在一个示例中，一种方法包括将设计布局划分成多个单元; 创建将所述多个单元中的每一个映射到其在所述设计布局内的位置和数据集合的查找表，其中所述查找表将所述多个单元中的任何重复单元关联到相同的数据集; 并且基于查找表将能量敏感层暴露于带电粒子束。

7. 发明授权

US08464186B2 Providing electron beam proximity effect correction by simulating write operations of polygonal shapes 有权
标题翻译：通过模拟多边形的写入操作提供电子束邻近效应校正
公开(公告)号：US08464186B2
公开(公告)日：2013-06-11
申请号：US13011165
申请日：2011-01-21
申请人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G03F1/144 , G03F1/78 , G03F7/70283 , G03F7/70441 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01L21/0274 , H01L21/0275
摘要： A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
摘要翻译：使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。第一多边形形状占据第一虚拟层并且包括第一组像素。该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。第二多边形形状占据第二虚拟层。该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

8. 发明申请

US20130055173A1 GEOMETRIC PATTERN DATA QUALITY VERIFICATION FOR MASKLESS LITHOGRAPHY 有权
标题翻译：几何图形数据质量验证用于MASKLESS LITHOGRAPHY
公开(公告)号：US20130055173A1
公开(公告)日：2013-02-28
申请号：US13217345
申请日：2011-08-25
申请人： Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Cheng-Hung Chen , Shih-Chi Wang , Nian-Fuh Cheng , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Cheng-Hung Chen , Shih-Chi Wang , Nian-Fuh Cheng , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/2059
摘要： The present disclosure involves a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.
摘要翻译：本公开涉及执行无掩模光刻工艺的方法。该方法包括提供接近校正模式。该方法包括基于接近校正图案生成变形图案。该方法包括对接近校正图案执行第一卷积处理以产生第一邻近校正图案轮廓。该方法包括处理第一接近校正图案轮廓以产生第二邻近校正图案轮廓。该方法包括对变形图案执行第二卷积处理以产生第一变形图案轮廓。该方法包括处理第一变形图案轮廓以产生第二变形图案轮廓。该方法包括识别第二接近校正图案轮廓和第二变形图案轮廓之间的不匹配。该方法包括响应于识别确定变形图案是否是光刻刻画的。

9. 发明授权

US08601407B2 Geometric pattern data quality verification for maskless lithography 有权
标题翻译：无掩模光刻的几何图形数据质量验证
公开(公告)号：US08601407B2
公开(公告)日：2013-12-03
申请号：US13217345
申请日：2011-08-25
申请人： Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Cheng-Hung Chen , Shih-Chi Wang , Nian-Fuh Cheng , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Cheng-Hung Chen , Shih-Chi Wang , Nian-Fuh Cheng , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/2059
摘要： Provided is a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.
摘要翻译：提供了进行无掩模光刻处理的方法。该方法包括提供接近校正模式。该方法包括基于接近校正图案生成变形图案。该方法包括对接近校正图案执行第一卷积处理以产生第一邻近校正图案轮廓。该方法包括处理第一接近校正图案轮廓以产生第二邻近校正图案轮廓。该方法包括对变形图案执行第二卷积处理以产生第一变形图案轮廓。该方法包括处理第一变形图案轮廓以产生第二变形图案轮廓。该方法包括识别第二接近校正图案轮廓和第二变形图案轮廓之间的不匹配。该方法包括响应于识别确定变形图案是否是光刻刻画的。

10. 发明授权

US08473877B2 Striping methodology for maskless lithography 有权
标题翻译：无掩模光刻的剥离方法
公开(公告)号：US08473877B2
公开(公告)日：2013-06-25
申请号：US13225617
申请日：2011-09-06
申请人： Hung-Chun Wang , Tzu-Chin Lin , Nian-Fuh Cheng , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Tzu-Chin Lin , Nian-Fuh Cheng , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70425 , H01J37/3174
摘要： The present disclosure involves a method of performing a maskless lithography process. The method includes receiving a computer layout file for an integrated circuit (IC) device. The layout file contains a plurality of IC sections. The method includes separating the computer layout file into a plurality of sub-files. The method includes striping the plurality of sub-files concurrently using a plurality of computer processors, thereby generating a plurality of striped sub-files. The method includes transferring the plurality of striped sub-files to a maskless lithography system.
摘要翻译：本公开涉及执行无掩模光刻工艺的方法。该方法包括接收用于集成电路（IC）设备的计算机布局文件。布局文件包含多个IC部分。该方法包括将计算机布局文件分离成多个子文件。该方法包括使用多个计算机处理器并行地分割多个子文件，从而生成多个条带化子文件。该方法包括将多个条带化子文件传送到无掩模光刻系统。

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