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1. 发明授权

US07256075B2 Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer 有权
标题翻译：在剥离薄层之后回收包括多层结构的晶片
公开(公告)号：US07256075B2
公开(公告)日：2007-08-14
申请号：US11075273
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
IPC分类号： H01L21/00
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
摘要翻译：本发明涉及从施主晶片转移有用层的方法，该施主晶片在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。材料层还可以包括可以相互选择性地去除的子层。

2. 发明授权

US07008859B2 Wafer and method of producing a substrate by transfer of a layer that includes foreign species 有权
公开(公告)号：US07008859B2
公开(公告)日：2006-03-07
申请号：US10678127
申请日：2003-10-06
申请人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
发明人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/2258
摘要： A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.

3. 发明申请

US20080248631A1 WAFER AND METHOD OF PRODUCING A SUBSTRATE BY TRANSFER OF A LAYER THAT INCLUDES FOREIGN SPECIES 有权
标题翻译：通过转移包括外来物种的层来生产基材的方法和方法
公开(公告)号：US20080248631A1
公开(公告)日：2008-10-09
申请号：US12139609
申请日：2008-06-16
申请人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
发明人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/2258
摘要： A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.
摘要翻译：一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。转移层可以包括一种或多种外来物质来改变其性质。在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为转入。然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

4. 发明授权

US07645684B2 Wafer and method of producing a substrate by transfer of a layer that includes foreign species 有权
标题翻译：晶片和通过转移包括外来物质的层来生产基板的方法
公开(公告)号：US07645684B2
公开(公告)日：2010-01-12
申请号：US12139609
申请日：2008-06-16
申请人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
发明人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/2258
摘要： A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.
摘要翻译：一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。转移层可以包括一种或多种外来物质来改变其性质。在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为转入。然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

5. 发明授权

US07535115B2 Wafer and method of producing a substrate by transfer of a layer that includes foreign species 有权
标题翻译：晶片和通过转移包括外来物质的层来生产基板的方法
公开(公告)号：US07535115B2
公开(公告)日：2009-05-19
申请号：US11274264
申请日：2005-11-16
申请人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
发明人： Fabrice Letertre , Yves Mathieu Le Vaillant , Eric Jalaguier
IPC分类号： H01L23/58 , H01L23/544
CPC分类号： H01L21/76254 , H01L21/2258
摘要： A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implanbumtation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.
摘要翻译：一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。转移层可以包括一种或多种外来物质来改变其性质。在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为转入。然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

6. 发明申请

US20050191779A1 Methods for producing a semiconductor entity 有权
标题翻译：半导体实体的制造方法
公开(公告)号：US20050191779A1
公开(公告)日：2005-09-01
申请号：US10863193
申请日：2004-06-07
申请人： Yves Mathieu Le Vaillant , Olivier Rayssac , Christophe Fernandez
发明人： Yves Mathieu Le Vaillant , Olivier Rayssac , Christophe Fernandez
IPC分类号： H01L21/762 , H01L21/30 , C12P21/06 , H01L21/00 , H01L21/46
CPC分类号： H01L21/76254 , H01L2221/68318 , Y10S438/977
摘要： A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.
摘要翻译：对半导体实体的制造方法进行说明。该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。还提供了在其表面上包括至少一个图案的接收器衬底。该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键在薄层内。这样提供的能量不足以破坏接合界面处的结合。还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。

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