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1. 发明授权

US07498245B2 Embrittled substrate and method for making same 有权
标题翻译：底物及其制造方法
公开(公告)号：US07498245B2
公开(公告)日：2009-03-03
申请号：US10276306
申请日：2001-05-29
申请人： Bernard Aspar , Chrystelle Lagahe , Olivier Rayssac , Bruno Ghyselen
发明人： Bernard Aspar , Chrystelle Lagahe , Olivier Rayssac , Bruno Ghyselen
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L2221/68368
摘要： This invention relates to a substrate (1) weakened by the presence of a micro-cavities zone, the micro-cavities zone (4′) delimiting a thin layer (5) with one face (2) of the substrate (1), some or all of the gaseous species having been eliminated from the micro-cavities (4′).The invention also relates to a process for the production of such a substrate.
摘要翻译：本发明涉及通过存在微腔区而被削弱的衬底（1），用空心衬垫（1）的一个面（2）限定薄层（5）的微腔区（4'），一些或已经从微腔（4'）中去除的全部气态物质。本发明还涉及生产这种基材的方法。

2. 发明申请

US20060019476A1 Method for making a detachable semiconductor substrate and for obtaining a semiconductor element 有权
标题翻译：制造可分离半导体衬底并获得半导体元件的方法
公开(公告)号：US20060019476A1
公开(公告)日：2006-01-26
申请号：US10530640
申请日：2003-10-03
申请人： Chrystelle Lagahe , Bernard Aspar , Aurelie Beaumont
发明人： Chrystelle Lagahe , Bernard Aspar , Aurelie Beaumont
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： The invention concerns a method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate (1) according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micro-bubbles, a thin layer of semiconductor material thus being delimited between the embrittled layer and one face (2) of the substrate, thermal treatment of the substrate to increase the brittleness level of the embrittled layer, said thermal treatment being continued until the appearance of local deformations on said face (2) of the substrate (1) in the form of blisters but without generating exfoliations of the thin layer during this step and during the continuation of the method, epitaxy of semiconductor material (6) on said face of the substrate to provide at least one epitaxial layer on said thin film.
摘要翻译：本发明涉及一种用于形成可以拆卸的半导体衬底的方法，包括以下步骤：根据能够构成脆化层的条件在基底（1）中引入气态物质，通过存在于所述微孔腔和/或微气泡，因此薄层的半导体材料被限定在脆化层和基底的一个面（2）之间，热处理基底以增加脆化层的脆性水平，所述热处理继续直到在该步骤期间在泡罩形式的基底（1）的所述面（2）上出现局部变形，但在该步骤期间没有产生薄层的剥落，并且在该方法的继续期间，半导体材料（6）的外延所述衬底的所述表面在所述薄膜上提供至少一个外延层。

3. 发明授权

US08530334B2 Process of treating defects during the bonding of wafers 有权
标题翻译：在晶片接合期间处理缺陷的过程
公开(公告)号：US08530334B2
公开(公告)日：2013-09-10
申请号：US12811203
申请日：2009-01-16
申请人： Chrystelle Lagahe , Bernard Aspar
发明人： Chrystelle Lagahe , Bernard Aspar
IPC分类号： H01L21/30
CPC分类号： H01L22/12 , H01L21/2007
摘要： The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.
摘要翻译：本发明涉及一种在垂直于由薄层限定的平面的方向上制备要转移到具有表面拓扑结构并因此在高度或水平上的变化的基底上的薄层的方法，该方法包括在薄层的粘合剂材料层，其厚度能够执行其表面的多个抛光步骤，以便消除任何缺陷或空隙或几乎任何缺陷或空隙，以准备通过分子种类的结合与基材。

4. 发明授权

US06936523B2 Two-stage annealing method for manufacturing semiconductor substrates 有权
标题翻译：用于制造半导体衬底的两阶段退火方法
公开(公告)号：US06936523B2
公开(公告)日：2005-08-30
申请号：US10733431
申请日：2003-12-10
申请人： Cecile Berne , Bruno Ghyselen , Chrystelle Lagahe , Thibaut Maurice
发明人： Cecile Berne , Bruno Ghyselen , Chrystelle Lagahe , Thibaut Maurice
IPC分类号： H01L21/762 , H01L21/46
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the source substrate to a handle substrate to form a source-handle structure. The source-handle-structure is then annealed at a first energy level that is lower than the energy of a thermal detachment budget and stopping before detachment of the source substrate. Lastly, the source-handle-structure is annealed at a second energy level that is lower than the first energy level at least until the substrate detaches at the predetermined detachment area.
摘要翻译：本发明涉及异种材料结构的制造方法。该方法包括在源极基板中形成预定的分离区域，并将源极基板接合到手柄基板上以形成源极 - 手柄结构。然后，源 - 把手结构在低于热分离预算的能量的第一能级退火并在源衬底分离之前停止。最后，源手柄结构在低于第一能级的第二能级退火，至少直到基板在预定的分离区域分离。

5. 发明授权

US07238598B2 Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element 有权
标题翻译：可以拆卸并获得半导体元件的半导体衬底的形成
公开(公告)号：US07238598B2
公开(公告)日：2007-07-03
申请号：US10530640
申请日：2003-10-03
申请人： Chrystelle Lagahe , Bernard Aspar , Aurélie Beaumont
发明人： Chrystelle Lagahe , Bernard Aspar , Aurélie Beaumont
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： A method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micro-bubbles, a thin layer of semiconductor material thus being delimited between the embrittled layer and one face of the substrate, thermal treatment of the substrate to increase the brittleness level of the embrittled layer, said thermal treatment being continued until the appearance of local deformations on said face of the substrate in the form of blisters but without generating exfoliations of the thin layer during this step and during the continuation of the method, epitaxy of semiconductor material on said face of the substrate to provide at least one epitaxial layer on said thin film.
摘要翻译：一种用于形成可拆卸的半导体衬底的方法，包括以下步骤：根据能够通过存在所述微腔和/或微泡中存在脆化层的条件在衬底中引入气态物质，因此薄层的半导体材料被限定在脆化层和基底的一个面之间，热处理基底以增加脆化层的脆性水平，所述热处理继续进行，直到在所述表面上出现局部变形的泡沫形式，但是在该步骤期间和在该方法的继续期间不产生薄层的剥落，在衬底的所述表面上外延半导体材料，以在所述薄膜上提供至少一个外延层。

6. 发明授权

US06465327B1 Method for producing a thin membrane and resulting structure with membrane 有权
标题翻译：薄膜生产方法和膜结构
公开(公告)号：US06465327B1
公开(公告)日：2002-10-15
申请号：US09763860
申请日：2001-02-28
申请人： Bernard Aspar , Michel Bruel , Claude Jaussaud , Chrystelle Lagahe
发明人： Bernard Aspar , Michel Bruel , Claude Jaussaud , Chrystelle Lagahe
IPC分类号： H01L2146
CPC分类号： H01L21/2007
摘要： The invention relates to a method for producing a thin membrane, comprising the following steps: implanting gas species, through one surface of a first substrate (10) and through one surface of a second substrate (20), which in said substrates are able to create microcavities (11, 21) delimiting, for each substrate, a thin layer (13, 23) lying between these microcavities and the implanted surface, the microcavities being able, after their implantation, to cause detachment of the thin layer from its substrate; assembly of the first substrate (10) onto the second substrate (20) such that their implanted surfaces face one another; detaching each thin layer (13, 23) from its substrate (10, 20), the thin layers remaining assembled together to form said thin membrane. The invention also concerns a thin membrane structure obtained with this method.
摘要翻译：本发明涉及一种制造薄膜的方法，包括以下步骤：通过第一基底（10）的一个表面和通过第二基底（20）的一个表面注入气体种类，所述第二基底能在为每个衬底创建限定位于这些微腔和植入表面之间的薄层（13,23）的微腔（11,21），所述微腔在植入之后能够使薄层与衬底分离; 将所述第一基板（10）组装到所述第二基板（20）上使得其注入的表面彼此面对;从其基板（10,20）分离每个薄层（13,23），所述薄层保持组装在一起以形成所述薄膜。本发明还涉及用该方法获得的薄膜结构。

7. 发明申请

US20100285213A1 PROCESS OF TREATING DEFECTS DURING THE BONDING OF WAFERS 有权
标题翻译：在水泥粘结过程中处理缺陷的过程
公开(公告)号：US20100285213A1
公开(公告)日：2010-11-11
申请号：US12811203
申请日：2009-01-16
申请人： Chrystelle Lagahe , Bernard Aspar
发明人： Chrystelle Lagahe , Bernard Aspar
IPC分类号： B05D5/10
CPC分类号： H01L22/12 , H01L21/2007
摘要： The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.
摘要翻译：本发明涉及一种在垂直于由薄层限定的平面的方向上制备要转移到具有表面拓扑结构并因此在高度或水平上的变化的基底上的薄层的方法，该方法包括在薄层的粘合剂材料层，其厚度能够执行其表面的多个抛光步骤，以便消除任何缺陷或空隙或几乎任何缺陷或空隙，以准备通过分子种类的结合与基材。

8. 发明授权

US07776714B2 Method for production of a very thin layer with thinning by means of induced self-support 有权
标题翻译：通过诱导自支撑生产具有变薄的非常薄层的方法
公开(公告)号：US07776714B2
公开(公告)日：2010-08-17
申请号：US10558621
申请日：2004-06-03
申请人： Hubert Moriceau , Chrystelle Lagahe , Benoit Bataillou
发明人： Hubert Moriceau , Chrystelle Lagahe , Benoit Bataillou
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The invention relates to a process for obtaining a thin layer made of a first material on a substrate made of a second material called the final substrate, including the following steps: bonding a thick layer of a first material on one of its main faces on the final substrate at an interface, implantation of gaseous species in the thick layer of first material to create a weakened zone delimiting said thin layer between the interface and the weakened zone, deposit a layer of third material called the self-supporting layer on the thick layer made of first material, fracture within the structure composed of the final substrate, the thick layer of first material and the layer of third material, at the weakened zone to supply the substrate supporting said thin layer.
摘要翻译：本发明涉及一种获得由第二材料制成的基板上由第一材料制成的薄层的方法，所述第二材料被称为最终基板，包括以下步骤：将第一材料的厚层在其主面之一在界面处的最终底物，在第一材料的厚层中注入气态物质以产生限定界面和弱化区之间的所述薄层的弱化区，在厚层上沉积称为自支撑层的第三材料层由第一材料制成，在由最终基底构成的结构内的断裂，第一材料的厚层和第三材料层在弱化区域处供应支撑所述薄层的基板。

9. 发明申请

US20070020895A1 Method for production of a very thin layer with thinning by means of induced self-support 有权
标题翻译：通过诱导自支撑生产具有变薄的非常薄层的方法
公开(公告)号：US20070020895A1
公开(公告)日：2007-01-25
申请号：US10558621
申请日：2004-06-03
申请人： Hubert Moriceau , Chrystelle Lagahe , Benoit Bataillou
发明人： Hubert Moriceau , Chrystelle Lagahe , Benoit Bataillou
IPC分类号： H01L21/04
CPC分类号： H01L21/76254
摘要： The invention relates to a process for obtaining a thin layer made of a first material on a substrate made of a second material called the final substrate, including the following steps: bonding a thick layer of a first material on one of its main faces on the final substrate at an interface, implantation of gaseous species in the thick layer of first material to create a weakened zone delimiting said thin layer between the interface and the weakened zone, deposit a layer of third material called the self-supporting layer on the thick layer made of first material, fracture within the structure composed of the final substrate, the thick layer of first material and the layer of third material, at the weakened zone to supply the substrate supporting said thin layer.
摘要翻译：本发明涉及一种获得由第二材料制成的基板上由第一材料制成的薄层的方法，所述第二材料被称为最终基板，包括以下步骤：将第一材料的厚层在其主面之一在界面处的最终底物，在第一材料的厚层中注入气态物质以产生限定界面和弱化区之间的所述薄层的弱化区，在厚层上沉积称为自支撑层的第三材料层由第一材料制成，在由最终基底构成的结构内的断裂，第一材料的厚层和第三材料层在弱化区域处供应支撑所述薄层的基板。

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