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1. 发明授权

US07256075B2 Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer 有权
标题翻译：在剥离薄层之后回收包括多层结构的晶片
公开(公告)号：US07256075B2
公开(公告)日：2007-08-14
申请号：US11075273
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
IPC分类号： H01L21/00
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
摘要翻译：本发明涉及从施主晶片转移有用层的方法，该施主晶片在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。材料层还可以包括可以相互选择性地去除的子层。

2. 发明授权

US07378729B2 Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权
标题翻译：在从其分离薄层之后回收包含缓冲层的晶片
公开(公告)号：US07378729B2
公开(公告)日：2008-05-27
申请号：US11285008
申请日：2005-11-23
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
IPC分类号： H01L23/12
CPC分类号： H01L21/02032
摘要： A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.
摘要翻译：由在分离至少一个有用层之后再循环晶片的方法产生的施主晶片。施主晶片包括基板; 衬底上的缓冲结构; 与缓冲结构相关联的保护层; 以及位于缓冲结构上方的后分离层，并且在其表面上呈现突起或粗糙部分。当去除后剥离层时，保护层防止整个缓冲结构的移除。

3. 发明授权

US07602046B2 Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
标题翻译：通过机械方式回收利用包括多层结构在内的薄片的薄片
公开(公告)号：US07602046B2
公开(公告)日：2009-10-13
申请号：US11075323
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
IPC分类号： H01L29/26
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.
摘要翻译：本发明涉及一种可回收的施主晶片，其包括基板及其上的成形层，其中所形成的层具有足以提供（a）至少两个用于从其分离的有用层的厚度，以及（b）可以将其移除到在与供体晶片分离之前平坦化有用层的暴露表面。

4. 发明授权

US07033905B2 Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means 有权
标题翻译：在通过机械方法从其分离薄层之后，回收包括缓冲层的晶片
公开(公告)号：US07033905B2
公开(公告)日：2006-04-25
申请号：US10726039
申请日：2003-12-01
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
IPC分类号： H01L21/76
CPC分类号： H01L21/02032 , C30B33/00 , H01L21/76251 , H01L21/76254 , H01L21/76256 , H01L21/76259
摘要： A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method comprises employing mechanical means to remove part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, as well as donor wafers which can be recycled in accordance with the invention.
摘要翻译：提供了在分离至少一个有用层之后回收施主晶片的方法，施主晶片依次包括基板，缓冲结构，并且在分离之前，包括有用层。该方法包括采用机械装置来去除在脱离发生的一侧的施主晶片的一部分，使得在去除物质之后，至少部分能够被重新用作缓冲结构的缓冲结构作为至少部分缓冲液在有用层的随后拆卸期间的结构。本文件还涉及从可以根据本发明再循环的供体晶片以及可根据本发明再循环的供体晶片分离薄层的方法。

5. 发明授权

US07008857B2 Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权
标题翻译：在从其分离薄层之后回收包含缓冲层的晶片
公开(公告)号：US07008857B2
公开(公告)日：2006-03-07
申请号：US10764289
申请日：2004-01-23
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
IPC分类号： H01L21/46
CPC分类号： H01L21/02032
摘要： A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.
摘要翻译：提供了在分离至少一个有用层之后回收施主晶片的方法，施主晶片依次包括基板，缓冲结构，并且在分离之前，包括有用层。该方法包括去除与脱离一侧的施主晶片的一部分相关的物质，使得在去除物质之后，至少部分缓冲结构能够被重新用作缓冲液的至少一部分在有用层的随后拆卸期间的结构。本文件还涉及一种生产可根据本发明再循环的供体晶片的方法，从根据本发明可再循环的供体晶片上分离薄层的方法以及可根据本发明再循环的供体晶片本发明。

6. 发明申请

US20100167500A1 METHOD OF RECYCLING AN EPITAXIED DONOR WAFER 审中-公开
标题翻译：回收离子沉淀法的方法
公开(公告)号：US20100167500A1
公开(公告)日：2010-07-01
申请号：US12718804
申请日：2010-03-05
申请人： Nabil Chhaimi , Eric Guiot , Patrick Reynaud , Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves-Matthieu Le Vaillant
发明人： Nabil Chhaimi , Eric Guiot , Patrick Reynaud , Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves-Matthieu Le Vaillant
IPC分类号： H01L21/78
CPC分类号： H01L21/76254 , H01L21/02032
摘要： A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
摘要翻译：公开了一种在接收器晶片上形成半导体材料薄层的半导体结构的方法。该方法包括从施主晶片去除材料的厚度，其包括支撑衬底和外延层，用于表面制备并将外延层的一部分从施主晶片转移到接收器晶片。在表面处理期间去除的厚度适于能够从施主晶片的剩余外延部分形成新的半导体结构。

7. 发明授权

US07375008B2 Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
标题翻译：通过机械方式回收利用包括多层结构在内的薄片的薄片
公开(公告)号：US07375008B2
公开(公告)日：2008-05-20
申请号：US11075272
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
摘要翻译：本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。

8. 发明授权

US06908774B2 Method and apparatus for adjusting the thickness of a thin layer of semiconductor material 有权
标题翻译：调整半导体材料薄层厚度的方法和装置
公开(公告)号：US06908774B2
公开(公告)日：2005-06-21
申请号：US10637078
申请日：2003-08-06
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
IPC分类号： H01L21/66 , H01L31/26
CPC分类号： H01L22/20 , H01L22/12 , Y10S438/981
摘要： A method for adjusting the thickness of a thin semiconductor material layer. The method includes measuring the layer to establish a thickness profile, determining thickness adjustment specifications from the measured thickness profile, and adjusting the thickness of the layer in accordance with the specifications by sacrificial oxidation. An apparatus for adjusting the thickness of a thin layer of semiconductor material according to this method is also disclosed.
摘要翻译：一种用于调整薄的半导体材料层的厚度的方法。该方法包括测量层以建立厚度分布，根据测量的厚度分布确定厚度调整规格，以及根据牺牲氧化的规格调整层的厚度。还公开了一种用于根据该方法调整半导体材料薄层的厚度的装置。

9. 发明授权

US07018910B2 Transfer of a thin layer from a wafer comprising a buffer layer 有权
标题翻译：从包括缓冲层的晶片转移薄层
公开(公告)号：US07018910B2
公开(公告)日：2006-03-28
申请号：US10614327
申请日：2003-07-08
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
IPC分类号： H01L21/30
CPC分类号： H01L21/76259 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/76254 , Y10S438/933
摘要： A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.
摘要翻译：一种制造由复合结构施主晶片获得的半导体材料薄层结构的方法。施主晶片包括匹配衬底的晶格参数匹配层，其有利地具有具有第一晶格参数的半导体材料的上层。具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜被匹配层紧张。在匹配衬底中产生弱点区域以促进分裂。松弛层具有基本上与第一晶格参数相同的标称晶格参数。将松弛层转移到接收基板。可以通过该过程制造许多不同的晶片。

10. 发明授权

US06991956B2 Methods for transferring a thin layer from a wafer having a buffer layer 有权
标题翻译：从具有缓冲层的晶片转移薄层的方法
公开(公告)号：US06991956B2
公开(公告)日：2006-01-31
申请号：US11032844
申请日：2005-01-10
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Nicolas Daval
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Nicolas Daval
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.
摘要翻译：描述了从晶片转移半导体材料层的方法。晶片包括支撑基板和包括具有第一晶格参数的材料的缓冲层的上表面。在一个实施例中，该技术包括在缓冲层上生长应变层。应变层由具有与第一晶格参数基本不同的标称晶格参数的半导体材料制成，并且其生长到足够薄的厚度以避免其中的应变松弛。该方法还包括在应变层上生长松弛层。松弛层由硅制成，并且具有至少一种其它半导体材料的浓度，其具有基本上与第一晶格参数相同的标称晶格参数。该技术还包括在缓冲层中提供弱化区域，并提供能量以在弱化区域分离结构。该结构包括缓冲层的一部分，应变层和松弛层。最后; 该方法包括在结构的松弛层中富集至少一种其它半导体材料的浓度。

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