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1. 发明专利

JP2014123729A Particle beam lithography process and especially simulation of effect of shot noise in particle beam lithography process 审中-公开
标题翻译：颗粒光束光刻过程和特殊仿真在粒子束光刻过程中的发射噪声的影响
公开(公告)号：JP2014123729A
公开(公告)日：2014-07-03
申请号：JP2013257608
申请日：2013-12-13
申请人： Commissariat A L'energie Atomique & Aux Energies Alternatives , コミサリアアレネルジィアトミークエオゼネルジイアルテアナティーフCommissariat A L’Energie Atomique Et Aux Energies Alternatives , Aselta Nanographics , アゼルタナノグラフィクスAselta Nanographics
发明人： BELLEDENT JEROME
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： G06F17/5009 , G03F7/705 , G03F7/70558 , G03F7/70625 , H01J2237/31793
摘要： PROBLEM TO BE SOLVED: To provide a particle beam lithography process and, especially a method of simulating the effect of shot noise in a particle beam lithography process, which is simpler than that of prior art and has a higher speed.SOLUTION: In a method including a step for depositing particles on the surface of a sample in a preset pattern by using a beam composed of particles, with the pattern being subdivided into pixels and the nominal exposure dose of particles are associated with respective pixels, the process includes a deposition step for calculating the map σof standard deviation of normalized exposure dose actually deposited on respective cells, and the map of standard deviation is calculated from a map Mof the nominal exposure dose associated with respective pixels, and a point spread function PSF characterizing the process. The method is executed by a computer.
摘要翻译：要解决的问题：提供粒子束光刻工艺，特别是模拟粒子束光刻工艺中喷射噪声的影响的方法，其比现有技术更简单并且具有更高的速度。解决方案：在一种方法中包括通过使用由颗粒构成的光束以预定图案将样品沉积在样品的表面上的步骤，其中图案被细分为像素，并且颗粒的标称曝光剂量与各个像素相关联，该方法包括沉积步骤用于计算实际沉积在各个单元上的标准化曝光剂量的标准偏差的映射图，并且根据与各个像素相关联的标称曝光剂量的映射M以及表征该过程的点扩散函数PSF计算标准偏差的映射。该方法由计算机执行。

3. 发明专利

JP2014123737A Method for estimating pattern to be printed on plate or mask by means of electron beam lithography, and corresponding printing device 有权
标题翻译：用于通过电子束光刻技术在板或掩模上印刷图案的方法和相应的印刷装置
公开(公告)号：JP2014123737A
公开(公告)日：2014-07-03
申请号：JP2013263389
申请日：2013-12-20
申请人： Commissariat A L'energie Atomique Et Aux Energies Alternatives , コミサリアアレネルジーアトミックエオゼネルジーアルテルナティブCommissariat A L’Energie Atomique Et Aux Energies Alternatives , Aselta Nanographics , アセルタナノグラフィクス
发明人： JEROME BELLEDENT
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G06F17/5045 , G03F1/82 , G03F7/2061 , G03F7/70441 , G03F7/70491 , H01J37/3174 , H01J2237/31754 , H01J2237/31769
摘要： PROBLEM TO BE SOLVED: To provide a method and technology for estimating a pattern to be printed by means of electron-beam lithography.SOLUTION: The method comprises: a step 100 of printing a set of calibration patterns (M, D) in a resin; a step 120 of measuring characteristic dimensions (CD) of the set; a step 140 of supplying an estimation value of a point spread function (PSF) on the basis of the measured characteristic dimensions; and a step 160 of estimating patterns to be printed by convoluting the supplied point spread function PSF with an initial value of the patterns. Furthermore, each calibration pattern includes a central zone exposed to an electron beam and a plurality of surrounding concentric zones with rotational symmetry. The estimation value of the point spread function (PSF) is calculated by inverting analytical modelling of the effect, on these characteristic dimensions, of applying a first point spread function portion (PSF) characterizing electrons back-scattered by a substrate to the set of calibration patterns (M, D).
摘要翻译：要解决的问题：提供一种用于通过电子束光刻来估计待印刷图案的方法和技术。方法：该方法包括：步骤100，将一组校准图案（M，D）印刷在树脂中 ; 测量该组的特征尺寸（CD）的步骤120; 基于测量的特征尺寸提供点扩散函数（PSF）的估计值的步骤140; 以及步骤160，通过用所述图案的初始值卷积所提供的点扩展函数PSF来估计要打印的图案。此外，每个校准图案包括暴露于电子束的中心区域和具有旋转对称性的多个周围的同心区域。点扩散函数（PSF）的估计值通过反映对这些特征尺寸的影响的分析建模，将表征由衬底反向散射的电子的第一点扩散函数部分（PSF）应用于校准集图案（M，D）。

4. 发明专利

JP2013222968A Method of correcting electron proximity effects using voigt type scattering functions 有权
标题翻译：使用VOIGT类型散射函数校正电子近似效应的方法
公开(公告)号：JP2013222968A
公开(公告)日：2013-10-28
申请号：JP2013082602
申请日：2013-04-11
申请人： Aselta Nanographics , アセルタナノグラフィクス
发明人： JEAN-HERVE TORTAI , PATRICK SCHIAVONE , THIAGO FIGUEIRO , NADER JEDIDI
IPC分类号： H01L21/027 , G03F7/20 , H01J37/305
CPC分类号： G06F17/5009 , B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/222 , H01J37/3174 , H01J2237/226 , H01J2237/31769
摘要： PROBLEM TO BE SOLVED: To provide a method of correcting electron proximity effects using Voigt type scattering functions.SOLUTION: A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopes, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, the point spread function uses Gaussian distribution laws. According to the present invention, at least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII function. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.
摘要翻译：要解决的问题：提供一种使用Voigt型散射函数校正电子接近效应的方法。提供了一种用于通过直接或间接写入以及电子显微镜投射特别用于光刻的电子束的方法。值得注意的是，对于小于50nm的关键尺寸或分辨率，必须校正与目标相互作用的光束的电子的向前和向后散射产生的邻近效应。传统上使用点扩散函数与目标几何的卷积完成。在现有技术中，点扩散函数使用高斯分布定律。根据本发明，点扩散函数的分量中的至少一个是Voigt函数和/或接近Voigt函数的函数的线性组合，例如Pearson VII函数。在某些实施例中，一些功能以辐射的向后散射峰为中心。

5. 发明申请

WO2016020264A1 METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS MODEL 审中-公开
标题翻译：用于确定IC制造工艺模型参数的方法
公开(公告)号：WO2016020264A1
公开(公告)日：2016-02-11
申请号：PCT/EP2015/067535
申请日：2015-07-30
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： H01J37/317 , G03F7/20 , G03F1/36
CPC分类号： G03F7/70441 , G03F1/36 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31796
摘要： According to the invention, an IC manufacturing model is disclosed, wherein input variables and an output variable are measured using a calibration set of patterns. The model can or not include a PSF. The output variable may be a dimensional bias between printed patterns and target patterns or simulated patterns. It can also be a Threshold To Meet Experiments (TTME). The input variables may be defined by a metric which uses kernel functions, preferably with a deformation function which includes a shift angle and a convolution procedure. A functional or associative relationship between the input variables and the output variable is defined. Preferably this definition includes normalization steps and interpolation steps. Advantageously, the interpolation step is of the kriging type. The invention achieves a much more accurate modeling of IC manufacturing, simulation or inspection processes.
摘要翻译：根据本发明，公开了一种IC制造模型，其中使用校准图案集来测量输入变量和输出变量。该模型可以或不包括PSF。输出变量可以是印刷图案和目标图案或模拟图案之间的尺寸偏差。它也可以是满足实验的门槛（TTME）。输入变量可以由使用内核函数的度量定义，优选地具有包括移位角和卷积过程的变形函数。定义输入变量和输出变量之间的函数关系或关联关系。优选地，该定义包括归一化步骤和内插步骤。有利地，内插步骤是克里金型。本发明实现了对IC制造，仿真或检验过程的更准确的建模。

6. 发明专利

JP2013042137A Method for correcting electronic proximity effect by using off-centered scattering function 有权
标题翻译：通过使用非中心散射函数来校正电子近似效应的方法
公开(公告)号：JP2013042137A
公开(公告)日：2013-02-28
申请号：JP2012179458
申请日：2012-08-13
申请人： Commissariat A L'energie Atomique Et Aux Energies Alternatives , コミシリアアレネルジアトミックエオエナジーズオルタネティヴズ , Aselta Nanographics , アセルタナノグラフィクス
发明人： PATRIK SCHIAVONE , FIGUEIRO THIAGO
IPC分类号： H01L21/027 , G03F7/20 , H01J37/22 , H01J37/28
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/2061 , H01J3/12 , H01J37/222 , H01J2229/563 , H01J2237/226 , H01J2237/31769
摘要： PROBLEM TO BE SOLVED: To provide a method for correcting an electronic proximity effect by using an off-centered scattering function.SOLUTION: The present invention discloses a method of projecting an electron beam, which is used in especially direct or indirect drawing lithography and an electron microscope examination. Especially in the case of limit dimension or resolution below 50 nm, a proximity effect caused by front and back scattering of electrons in a beam interacting a target should be corrected. For the correction, convolution integration of a point spread function with respect to a shape of the target is used conventionally. A conventional technology has the point spread function whose center is at the center of the beam, and uses a Gaussian function or exponential distribution law. In the present invention, at least one component of the point spread function has a maximum value whose position is not at the center of the beam. Preferably the maximum value is positioned at a back scattering peak. Advantageously, a gamma distribution law is used for the point spread function.
摘要翻译：要解决的问题：提供一种通过使用偏心散射函数来校正电子接近效应的方法。解决方案：本发明公开了一种投影电子束的方法，特别用于直接或间接绘制光刻和电子显微镜检查。特别是在极限尺寸或分辨率低于50nm的情况下，应当纠正由相互作用的光束中的电子的前后散射引起的邻近效应。对于校正，常规地使用点扩散函数相对于目标的形状的卷积积分。传统技术具有中心在光束中心的点扩散函数，并使用高斯函数或指数分布定律。在本发明中，点扩散函数的至少一个分量具有位置不在波束中心的最大值。优选地，最大值位于后向散射峰。有利地，伽马分布定律用于点扩散函数。版权所有（C）2013，JPO＆INPIT

7. 发明申请

US20170123322A1 METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS 有权
公开(公告)号：US20170123322A1
公开(公告)日：2017-05-04
申请号：US15310709
申请日：2015-06-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ASELTA NANOGRAPHICS
发明人： Mohamed SAÏB , Aurélien FAY , Patrick SCHIAVONE , Thiago FIGUEIRO
IPC分类号： G03F7/20 , G06F17/50
摘要： A method for calculating the parameters of a resist model of an IC manufacturing process is provided. Accordingly, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. The deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.

8. 发明申请

US20170097571A1 METHOD OF REDUCING SHOT COUNT IN DIRECT WRITING BY A PARTICLE OR PHOTON BEAM 审中-公开
公开(公告)号：US20170097571A1
公开(公告)日：2017-04-06
申请号：US15286260
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
发明人： Luc MARTIN , Thomas QUAGLIO , Matthieu MILLEQUANT , Clyde BROWNING , Serdar MANAKLI
IPC分类号： G03F7/20
CPC分类号： G03F1/78 , G03F7/70383 , G03F7/70433 , G03F7/70441 , G03F7/70491 , G03F7/705 , H01J37/3026 , H01J37/3174 , H01J37/3178 , H01J2237/3175
摘要： A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.

9. 发明专利

FR2999737B1 SIMULATION DES EFFETS DU BRUIT DE GRENAILLE SUR UN PROCEDE DE LITHOGRAPHIE PAR FAISCEAU DE PARTICULES ET NOTAMMENT DE LITHOGRAPHIE ELECTRONIQUE. 未知
公开(公告)号：FR2999737B1
公开(公告)日：2015-02-27
申请号：FR1262228
申请日：2012-12-18
申请人： COMMISSARIAT ENERGIE ATOMIQUE , ASELTA NANOGRAPHICS
发明人： BELLEDENT JEROME
IPC分类号： G03F1/20 , G03F1/78

10. 发明专利

FR3000234A1 PROCEDE D'ESTIMATION DE MOTIFS A IMPRIMER SUR PLAQUE OU SUR MASQUE PAR LITHOGRAPHIE A FAISCEAU D'ELECTRONS ET DISPOSITIF D'IMPRESSION CORRESPONDANT 未知
公开(公告)号：FR3000234A1
公开(公告)日：2014-06-27
申请号：FR1262521
申请日：2012-12-21
申请人： COMMISSARIAT ENERGIE ATOMIQUE , ASELTA NANOGRAPHICS
发明人： BELLEDENT JEROME
IPC分类号： G03F1/36 , G03F1/20
摘要： Ce procédé d'estimation de motifs (M'PF,D'PF) à imprimer par lithographie à faisceau d'électrons, comporte les étapes suivantes: impression (100), dans une résine, d'un ensemble de motifs de calibrage (MCF,DCF); mesure (120) de dimensions caractéristiques (CD) de cet ensemble ; fourniture d'une estimation (140) de la fonction d'étalement du point (PSF) à partir des dimensions caractéristiques (CD) mesurées ; estimation (160) des motifs (M'PF,D'PF) à imprimer par convolution de la fonction d'étalement du point (PSF) avec une valeur initiale des motifs (MPF,DPF). En outre, chaque motif de calibrage imprimé comporte une zone centrale exposée au faisceau d'électrons et une pluralité de zones concentriques à symétrie de révolution disposées autour. Les dimensions caractéristiques mesurées sont les dimensions caractéristiques (CD) des zones centrales des motifs. L'estimation de la fonction d'étalement du point (PSF) est calculée par inversion d'une modélisation analytique de l'effet, sur ces dimensions caractéristiques de l'application d'une première portion de fonction d'étalement du point (PSFBE) caractérisant des électrons rétrodiffusés par le substrat à l'ensemble de motifs de calibrage (MCF,DCF).

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