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1. 发明申请

US20170097571A1 METHOD OF REDUCING SHOT COUNT IN DIRECT WRITING BY A PARTICLE OR PHOTON BEAM 审中-公开
公开(公告)号：US20170097571A1
公开(公告)日：2017-04-06
申请号：US15286260
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
发明人： Luc MARTIN , Thomas QUAGLIO , Matthieu MILLEQUANT , Clyde BROWNING , Serdar MANAKLI
IPC分类号： G03F7/20
CPC分类号： G03F1/78 , G03F7/70383 , G03F7/70433 , G03F7/70441 , G03F7/70491 , G03F7/705 , H01J37/3026 , H01J37/3174 , H01J37/3178 , H01J2237/3175
摘要： A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.

2. 发明申请

US20160252807A1 FREE FORM FRACTURING METHOD FOR ELECTRONIC OR OPTICAL LITHOGRAPHY USING RESIST THRESHOLD CONTROL 有权
标题翻译：使用电阻阈值控制的电子或光学光刻的免费形式破碎方法
公开(公告)号：US20160252807A1
公开(公告)日：2016-09-01
申请号：US15033016
申请日：2014-10-27
申请人： ASELTA NANOGRAPHICS
发明人： Serdar MANAKLI , Luc MARTIN
IPC分类号： G03F1/70 , G06F17/50 , G03F7/20
CPC分类号： G03F1/70 , G03F1/68 , G03F7/70433 , G03F7/70558 , G06F17/5068 , H01J37/3026 , H01J37/3174 , H01J2237/31776
摘要： A computer implemented method of fracturing free form target design into elementary shots for defined roughness of the contour comprises determining a first set of shots which pave the target design and determining a second set of shots to fill the gaps. The dose levels of overlapping shots in the first or second sets of shots are determined so the compounded dose is adequate to the resist threshold, considering the proximity effect of the actual imprint of shots on the insulated target. A dose geometry modulation is applied and rounded shot prints are produced by shots not circular that may overlap. The degree of overlap is determined as a function of desired optimization of fit criteria between a printed contour and the contour of the desired pattern. Placements and dimensions of the shots are determined by a plurality of fit criteria between printed contour and contour of the desired pattern.
摘要翻译：一种计算机实现的将自由形式目标设计分解成用于确定轮廓的粗糙度的基本投射的方法包括确定铺平目标设计的第一组投篮并确定第二组投篮以填补所述间隙。确定第一组或第二组拍摄中重叠拍摄的剂量水平，因此考虑到实际拍摄照片对绝缘目标的邻近效应，复合剂量足以抵抗抗蚀剂阈值。应用剂量几何调制，并且通过可能重叠的不是圆形的拍摄产生圆形拍摄照片。根据期望的打印轮廓和期望图案的轮廓之间的拟合标准优化的函数确定重叠程度。拍摄的放置和尺寸由打印的轮廓和期望图案的轮廓之间的多个拟合标准确定。

3. 发明申请

US20140245240A1 Free Form Fracturing Method for Electronic or Optical Lithography 有权
标题翻译：电子或光学光刻的自由形式压裂方法
公开(公告)号：US20140245240A1
公开(公告)日：2014-08-28
申请号：US13774534
申请日：2013-02-22
申请人： ASELTA NANOGRAPHICS
发明人： Charles TIPHINE , Thomas QUAGLIO , Luc MARTIN
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G06F17/50 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： The invention discloses a computer implemented method of fracturing a surface into elementary features wherein the desired pattern has a rectilinear or curvilinear form. Depending upon the desired pattern, a first fracturing will be performed of a non-overlapping or an overlapping type. If the desired pattern is resolution critical, it will be advantageous to perform a second fracturing step using eRIFs. These eRIFs will be positioned either on the edges or on the medial axis or skeleton of the desired pattern. The invention further discloses method steps to define the position and shape of the elementary features used for the first and second fracturing steps.
摘要翻译：本发明公开了一种将表面压裂成基本特征的计算机实现方法，其中期望的图案具有直线或曲线形式。根据期望的图案，将执行非重叠或重叠类型的第一压裂。如果期望的模式是分辨率关键，则使用eRIF执行第二压裂步骤将是有利的。这些eRIF将位于所需图案的边缘或中轴或骨架上。本发明还公开了用于限定用于第一和第二压裂步骤的基本特征的位置和形状的方法步骤。

4. 发明申请

US20150154344A1 FREE FORM FRACTURING METHOD FOR ELECTRONIC OR OPTICAL LITHOGRAPHY 有权
标题翻译：电子或光学光刻的免费形式破碎方法
公开(公告)号：US20150154344A1
公开(公告)日：2015-06-04
申请号：US14616617
申请日：2015-02-06
申请人： ASELTA NANOGRAPHICS
发明人： Charles TIPHINE , Thomas QUAGLIO , Luc MARTIN
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G06F17/50 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： The invention discloses a computer implemented method of fracturing a surface into elementary features wherein the desired pattern has a rectilinear or curvilinear form. Depending upon the desired pattern, a first fracturing will be performed of a non-overlapping or an overlapping type. If the desired pattern is resolution critical, it will be advantageous to perform a second fracturing step using eRIFs. These eRIFs will be positioned either on the edges or on the medial axis or skeleton of the desired pattern. The invention further discloses method steps to define the position and shape of the elementary features used for the first and second fracturing steps.
摘要翻译：本发明公开了一种将表面压裂成基本特征的计算机实现方法，其中期望的图案具有直线或曲线形式。根据期望的图案，将执行非重叠或重叠类型的第一压裂。如果期望的模式是分辨率关键，则使用eRIF执行第二压裂步骤将是有利的。这些eRIF将位于所需图案的边缘或中轴或骨架上。本发明还公开了用于限定用于第一和第二压裂步骤的基本特征的位置和形状的方法步骤。

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