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1. 发明申请

WO2016020264A1 METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS MODEL 审中-公开
标题翻译：用于确定IC制造工艺模型参数的方法
公开(公告)号：WO2016020264A1
公开(公告)日：2016-02-11
申请号：PCT/EP2015/067535
申请日：2015-07-30
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： H01J37/317 , G03F7/20 , G03F1/36
CPC分类号： G03F7/70441 , G03F1/36 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31796
摘要： According to the invention, an IC manufacturing model is disclosed, wherein input variables and an output variable are measured using a calibration set of patterns. The model can or not include a PSF. The output variable may be a dimensional bias between printed patterns and target patterns or simulated patterns. It can also be a Threshold To Meet Experiments (TTME). The input variables may be defined by a metric which uses kernel functions, preferably with a deformation function which includes a shift angle and a convolution procedure. A functional or associative relationship between the input variables and the output variable is defined. Preferably this definition includes normalization steps and interpolation steps. Advantageously, the interpolation step is of the kriging type. The invention achieves a much more accurate modeling of IC manufacturing, simulation or inspection processes.
摘要翻译：根据本发明，公开了一种IC制造模型，其中使用校准图案集来测量输入变量和输出变量。该模型可以或不包括PSF。输出变量可以是印刷图案和目标图案或模拟图案之间的尺寸偏差。它也可以是满足实验的门槛（TTME）。输入变量可以由使用内核函数的度量定义，优选地具有包括移位角和卷积过程的变形函数。定义输入变量和输出变量之间的函数关系或关联关系。优选地，该定义包括归一化步骤和内插步骤。有利地，内插步骤是克里金型。本发明实现了对IC制造，仿真或检验过程的更准确的建模。

2. 发明申请

WO2015185576A1 METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS 审中-公开
标题翻译：用于计算IC制造工艺的度量的方法
公开(公告)号：WO2015185576A1
公开(公告)日：2015-12-10
申请号：PCT/EP2015/062301
申请日：2015-06-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , FAY, Aurélien , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： G03F7/20 , G03F1/36 , G03F1/80 , G06F17/50 , H01J37/317
CPC分类号： G03F7/705 , G03F1/36 , G03F1/80 , G03F7/70441 , G06F17/5081 , G06F2217/12 , H01J37/3174 , H01J37/3178 , Y02P90/265
摘要： The invention discloses a method for calculating the parameters of a resist model of an IC manufacturing process. According to an embodiment of the method of the invention, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. Advantageously, the deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.
摘要翻译：本发明公开了一种用于计算IC制造工艺的抗蚀剂模型的参数的方法。根据本发明的方法的一个实施例，代表目标设计的函数在整个目标设计中卷积，具有与具有移位角的变形函数复合的核函数。有利地，变形函数被其傅立叶级数展开代替，其顺序被选择为使得卷积积通过在要应用于目标设计的校正的公差内的旋转不变。或者，卷积的乘积可以被分解为基于所确定的角度而变化的基本核函数，使得可以将位移角的值的变形函数投影到几个基本核函数上，其中角度接近于位移角。

3. 发明申请

WO2015028753A1 PROCÉDÉ DE CORRECTION DES EFFETS DE PROXIMITÉ ÉLECTRONIQUE 审中-公开
标题翻译：用于校正电子近似效应的方法
公开(公告)号：WO2015028753A1
公开(公告)日：2015-03-05
申请号：PCT/FR2014/052139
申请日：2014-08-28
申请人： ASELTA NANOGRAPHICS
发明人： JEDIDI, Nader , SCHIAVONE, Patrick , TORTAI, Jean-Hervé , FIGUEIRO, Thiago
IPC分类号： G03F7/20 , H01J37/317
CPC分类号： H01J37/304 , G03F7/70441 , G03F7/705 , H01J37/285 , H01J37/3174 , H01J37/3175 , H01J2237/2487
摘要： Le procédé de projection d'un faisceau électronique sur une cible comporte une correction des effets de diffusion des électrons dans la cible. Cette correction est rendue possible grâce à une étape de calcul d'une fonction d'étalement du point ayant une variation radiale suivant une fonction polynomiale par morceaux.
摘要翻译：公开了一种将电子束投射到目标上的方法，包括目标中电子散射的校正。通过计算具有根据阵列中的多项式函数的径向变化的点扩散函数的步骤，可以进行所述校正。

4. 发明申请

WO2017060273A1 METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE 审中-公开
标题翻译：用于通过匹配程序确定应用于IC制造过程的剂量校正的方法
公开(公告)号：WO2017060273A1
公开(公告)日：2017-04-13
申请号：PCT/EP2016/073744
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago , BAYLE, Sébastien
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516
摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.
摘要翻译：本发明公开了一种从第一过程的参数容易地确定第二制造工艺的参数的方法。代表两个过程之间的差异的度量是根据参数的数值计算的，这些参数值可以在校准布局上测量两个过程，或者可以根据布局的预先存在的值或者为通过插值/外推程序进行两个处理。选择度量的数量，使得它们的组合给出了在设计的所有区域中的两个过程之间的差异的精确表示。有利地，度量被计算为目标设计的卷积与核函数和变形函数的化合物的乘积。确定参考过程的参考物理模型。计算应用于由参考过程产生的设计边缘的尺寸校正。然后将其全部或部分转化为剂量校正。

5. 发明申请

WO2017013085A1 A METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BEAM LITHOGRAPHY 审中-公开
标题翻译：一种用于电子束光刻的剂量调制方法
公开(公告)号：WO2017013085A1
公开(公告)日：2017-01-26
申请号：PCT/EP2016/067112
申请日：2016-07-19
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3023 , H01J37/3174 , H01J2237/24507 , H01J2237/30461 , H01J2237/31769
摘要： A method for transferring a pattern (PT) onto a substrate (10) by direct writing by means of a particle or photon beam (21 ), the method comprising: - a step of producing a dose map, associating a dose to each of a plurality of elementary shapes of said pattern; and - a step of exposing the substrate according to the pattern with a spatially-dependent emitted dose depending on said dose map; characterized in that said step of producing a dose map includes: - computing at least a first and a second metrics of the pattern for each of said elementary shapes, the first metric being representative of features of the pattern within a first range from the elementary shape and the second metric being representative of features of the pattern within a second range, larger than the first range, from the elementary shape; and - determining the emitted dose associated to each of said elementary shapes of the pattern as a function of said metrics. A computer program product for carrying out such a method or at least said step of producing a dose map.
摘要翻译：一种通过直接通过粒子或光子束（21）书写将图案（PT）转印到基片（10）上的方法，所述方法包括： - 产生剂量图的步骤，将剂量与所述图案的多个基本形状; 以及 - 根据所述剂量图，根据所述图案以空间依赖的发射剂量曝光所述底物的步骤; 其特征在于，所述产生剂量图的步骤包括： - 计算每个所述基本形状的图案的至少第一和第二度量，第一度量代表从基本形状的第一范围内的图案的特征并且所述第二度量从所述基本形状代表在大于所述第一范围的第二范围内的所述图案的特征; 以及 - 确定与所述模式的每个所述基本形状相关联的所发射的剂量作为所述度量的函数。一种用于执行这种方法或至少所述产生剂量图的步骤的计算机程序产品。

6. 发明申请

WO2015185598A1 METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS BY A DIFFERENTIAL PROCEDURE 审中-公开
标题翻译：通过差分程序确定IC制造工艺参数的方法
公开(公告)号：WO2015185598A1
公开(公告)日：2015-12-10
申请号：PCT/EP2015/062334
申请日：2015-06-03
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516 , G06F17/5072 , G06F2217/06 , G06F2217/12
摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.
摘要翻译：本发明公开了一种从第一过程的参数容易地确定第二制造工艺的参数的方法。代表两个过程之间的差异的度量是根据参数的数值计算的，这些参数值可以在校准布局上测量两个过程，或者可以根据布局的预先存在的值或者为通过插值/外推程序进行两个处理。选择度量的数量，使得它们的组合给出了在设计的所有区域中的两个过程之间的差异的精确表示。有利地，度量被计算为目标设计的卷积与核函数和变形函数的化合物的乘积。

7. 发明授权

EP3039486B1 PROCÉDÉ DE CORRECTION DES EFFETS DE PROXIMITÉ ÉLECTRONIQUE 有权转让
公开(公告)号：EP3039486B1
公开(公告)日：2019-04-10
申请号：EP14767056.6
申请日：2014-08-28
申请人： Aselta Nanographics
发明人： JEDIDI, Nader , SCHIAVONE, Patrick , TORTAI, Jean-Hervé , FIGUEIRO, Thiago
IPC分类号： G03F7/20 , H01J37/317 , H01J37/285 , H01J37/304

8. 发明公开

EP3326192A1 A METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BEAM LITHOGRAPHY 审中-实审转让
公开(公告)号：EP3326192A1
公开(公告)日：2018-05-30
申请号：EP16744685.5
申请日：2016-07-19
申请人： Aselta Nanographics
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3023 , H01J37/3174 , H01J2237/24507 , H01J2237/30461 , H01J2237/31769
摘要： A method for transferring a pattern onto a substrate by direct writing by means of a particle or photon beam, the method comprising: - a step of producing a dose map, associating a dose to each of a plurality of elementary features of said pattern; and - a step of exposing the substrate according to the pattern with a spatially-dependent dose depending on said dose map; characterized in that said step of producing a dose map includes: - computing at least two metrics for each of said elementary features of the pattern; and - determining the emitted dose associated to each of said elementary features of the pattern as a function of said metrics. A computer program product for carrying out such a method or at least said step of producing a dose map.

9. 发明公开

EP3153924A1 METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE 有权转让
标题翻译：方法用于确定剂量修正IC制造过程中，通过一个平衡程序
公开(公告)号：EP3153924A1
公开(公告)日：2017-04-12
申请号：EP15306580.0
申请日：2015-10-07
申请人： Aselta Nanographics
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago , BAYLE, Sébastien
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516
摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.
摘要翻译：本发明盘松的方法容易地确定矿的第二工艺参数，用于从第一工艺的参数制造。度量代表的两个过程之间的差异从多个参数的值的，可以测量这两个过程在校准布局计算，或可以是确定性从预先存在的值开采布局或基准数据的两个过程通过内插/外插步骤。度量的数量被选择以便做他们的组合给出了在一个设计的所有区域的两个过程之间的差异精确表示。有利的是，所述度量计算为目标设计的卷积的产物和核函数的化合物和变形函数。参考过程的参考物理模型是确定性的开采。的施胶校正将被施加到由参考处理计算所产生的设计的边缘。然后，它被转化，全部或部分，变成了剂量校正。

10. 发明公开

EP3152623A1 METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS BY A DIFFERENTIAL PROCEDURE 有权转让
标题翻译：一种用于确定IC制造过程的参数由增量备份过程
公开(公告)号：EP3152623A1
公开(公告)日：2017-04-12
申请号：EP15725071.3
申请日：2015-06-03
申请人： Aselta Nanographics
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516 , G06F17/5072 , G06F2217/06 , G06F2217/12
摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.
摘要翻译：本发明盘松的方法容易地确定矿的第二工艺参数，用于从第一工艺的参数制造。度量代表的两个过程之间的差异从多个参数的值的，可以测量这两个过程在校准布局计算，或可以是确定性从预先存在的值开采布局或基准数据的两个过程通过内插/外插步骤。度量的数量被选择以便做他们的组合给出了在一个设计的所有区域的两个过程之间的差异精确表示。有利的是，所述度量计算为目标设计的卷积的产物和核函数的化合物和变形函数。

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