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1. 发明专利

JP2013222968A Method of correcting electron proximity effects using voigt type scattering functions 有权
标题翻译：使用VOIGT类型散射函数校正电子近似效应的方法
公开(公告)号：JP2013222968A
公开(公告)日：2013-10-28
申请号：JP2013082602
申请日：2013-04-11
申请人： Aselta Nanographics , アセルタナノグラフィクス
发明人： JEAN-HERVE TORTAI , PATRICK SCHIAVONE , THIAGO FIGUEIRO , NADER JEDIDI
IPC分类号： H01L21/027 , G03F7/20 , H01J37/305
CPC分类号： G06F17/5009 , B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/222 , H01J37/3174 , H01J2237/226 , H01J2237/31769
摘要： PROBLEM TO BE SOLVED: To provide a method of correcting electron proximity effects using Voigt type scattering functions.SOLUTION: A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopes, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, the point spread function uses Gaussian distribution laws. According to the present invention, at least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII function. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.
摘要翻译：要解决的问题：提供一种使用Voigt型散射函数校正电子接近效应的方法。提供了一种用于通过直接或间接写入以及电子显微镜投射特别用于光刻的电子束的方法。值得注意的是，对于小于50nm的关键尺寸或分辨率，必须校正与目标相互作用的光束的电子的向前和向后散射产生的邻近效应。传统上使用点扩散函数与目标几何的卷积完成。在现有技术中，点扩散函数使用高斯分布定律。根据本发明，点扩散函数的分量中的至少一个是Voigt函数和/或接近Voigt函数的函数的线性组合，例如Pearson VII函数。在某些实施例中，一些功能以辐射的向后散射峰为中心。

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