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81. 发明授权

US07339255B2 Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes 有权
标题翻译：半导体器件相对于{0001}晶面相对于<1-100>和<11-20>具有双向倾斜
公开(公告)号：US07339255B2
公开(公告)日：2008-03-04
申请号：US11185768
申请日：2005-07-21
申请人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
发明人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
IPC分类号： H01L29/04
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.
摘要翻译：半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。

82. 发明申请

US20120292632A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 失效
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292632A1
公开(公告)日：2012-11-22
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32 , H01L21/20 , H01L29/20
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层和功能层。基底层形成在形成在硅衬底上的含Al氮化物半导体层上。基础层的厚度不小于1微米，包括GaN。功能层设置在基础层上。功能层包括第一半导体层。第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

83. 发明授权

US09105810B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09105810B2
公开(公告)日：2015-08-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。第一半导体层是第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并且是第二导电类型。反射电极设置在第二半导体层上并且包括Ag。氧化物层设置在反射电极上。氧化物层是绝缘的并且具有第一开口。含氧层设置在氧化物层上。含氮层是绝缘的，并且具有与第一开口连通的第二开口。

84. 发明授权

US08623676B2 Semiconductor light emitting device with light transmittable electrode and method for manufacturing same 有权
标题翻译：具有透光电极的半导体发光器件及其制造方法
公开(公告)号：US08623676B2
公开(公告)日：2014-01-07
申请号：US13218728
申请日：2011-08-26
申请人： Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
发明人： Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/18
CPC分类号： H01L33/40 , H01L33/007 , H01L33/16 , H01L33/32 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.
摘要翻译：根据一个实施例，半导体发光器件包括第一和第二导电层，第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。第二半导体层设置在第一导电层与第一半导体层之间。发光部分设置在第一和第二半导体层之间。第二导电层与第二半导体层和第二导电层在第二半导体层和第一导电层之间接触。第一和第二导电层可透射从发光部分发射的光。第一导电层包括具有第一平均晶粒直径的多晶体。第二导电层包括第二平均粒径为150纳米以下且小于第一平均粒径的多晶体。

85. 发明授权

US09040322B2 Method for manufacturing semiconductor light emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US09040322B2
公开(公告)日：2015-05-26
申请号：US13601231
申请日：2012-08-31
申请人： Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
发明人： Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/12 , H01L33/24 , H01L33/00 , H01L33/22
CPC分类号： H01L33/12 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/24
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光元件的方法。该方法可以包括将结构体的层叠主体接合到基板主体。结构体包括生长衬底和设置在生长衬底上的层叠主体。堆叠主体包括第一氮化物半导体膜，设置在第一氮化物半导体膜上的发光膜和设置在发光膜上的第二氮化物半导体膜。该方法可以包括去除生长底物。该方法可以包括形成多个堆叠体。该方法可以包括在第一氮化物半导体层的表面中形成不均匀部分。该方法可以包括形成多个半导体发光元件。

86. 发明授权

US08692287B2 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体器件，氮化物半导体晶片，以及氮化物半导体层的制造方法
公开(公告)号：US08692287B2
公开(公告)日：2014-04-08
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

87. 发明授权

US08598605B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08598605B2
公开(公告)日：2013-12-03
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

88. 发明申请

US20120292593A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292593A1
公开(公告)日：2012-11-22
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04 , H01L21/20 , H01L29/201
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

89. 发明授权

US08815717B2 Vapor deposition method and vapor deposition apparatus 有权
标题翻译：气相沉积法和蒸镀装置
公开(公告)号：US08815717B2
公开(公告)日：2014-08-26
申请号：US12875835
申请日：2010-09-03
申请人： Yoshiyuki Harada , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki Harada , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C23C16/45504 , C23C16/303 , C23C16/45574 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.
摘要翻译：根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层，来自第二出口的原料气体。该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

90. 发明申请

US20130087760A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件和半导体晶体管
公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

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