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1. 发明授权

US09040322B2 Method for manufacturing semiconductor light emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US09040322B2
公开(公告)日：2015-05-26
申请号：US13601231
申请日：2012-08-31
申请人： Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
发明人： Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/12 , H01L33/24 , H01L33/00 , H01L33/22
CPC分类号： H01L33/12 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/24
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光元件的方法。该方法可以包括将结构体的层叠主体接合到基板主体。结构体包括生长衬底和设置在生长衬底上的层叠主体。堆叠主体包括第一氮化物半导体膜，设置在第一氮化物半导体膜上的发光膜和设置在发光膜上的第二氮化物半导体膜。该方法可以包括去除生长底物。该方法可以包括形成多个堆叠体。该方法可以包括在第一氮化物半导体层的表面中形成不均匀部分。该方法可以包括形成多个半导体发光元件。

2. 发明授权

US08598605B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08598605B2
公开(公告)日：2013-12-03
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

3. 发明申请

US20130234106A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130234106A1
公开(公告)日：2013-09-12
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/12
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

4. 发明授权

US08766297B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08766297B2
公开(公告)日：2014-07-01
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/36 , H01L33/42
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

5. 发明申请

US20120217524A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 失效
标题翻译：半导体发光装置和发光装置
公开(公告)号：US20120217524A1
公开(公告)日：2012-08-30
申请号：US13206649
申请日：2011-08-10
申请人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/50 , H01L33/40
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/50 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

6. 发明授权

US08766311B2 Semiconductor light emitting device and light emitting apparatus 失效
标题翻译：半导体发光器件和发光装置
公开(公告)号：US08766311B2
公开(公告)日：2014-07-01
申请号：US13206649
申请日：2011-08-10
申请人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/40
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/50 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

7. 发明申请

US20120043550A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120043550A1
公开(公告)日：2012-02-23
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide ITO , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide ITO , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/60 , H01L33/30 , H01L33/36
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

8. 发明授权

US08525194B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效
公开(公告)号：US08525194B2
公开(公告)日：2013-09-03
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

9. 发明申请

US20120292632A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 失效
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292632A1
公开(公告)日：2012-11-22
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32 , H01L21/20 , H01L29/20
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层和功能层。基底层形成在形成在硅衬底上的含Al氮化物半导体层上。基础层的厚度不小于1微米，包括GaN。功能层设置在基础层上。功能层包括第一半导体层。第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

10. 发明授权

US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L33/44 , H01L33/08 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

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