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81. 发明授权

US06476492B2 Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten 失效
标题翻译：具有电容器的半导体器件和具有含钼钨的互连层
公开(公告)号：US06476492B2
公开(公告)日：2002-11-05
申请号：US09758288
申请日：2001-01-12
申请人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
发明人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
IPC分类号： H01L2348
CPC分类号： H01L23/53257 , H01L27/10814 , H01L27/10894 , H01L28/55 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.
摘要翻译：在包括第一电极的电容器组件，具有高介电常数或与第一电极接触的铁电性的氧化膜和与该氧化物膜接触的第二电极的电容器组件中，在其上形成有金属布线层的硅衬底的主面上，通过使用含钼钨作为材料，可以解决半导体器件的钨互连断裂，可靠性降低，成品率降低等问题金属互连层。

82. 发明授权

US06412187B1 Analog quantity display method, analog quantity measuring method, and digital/analog display type measuring instrument 有权
标题翻译：模拟量显示方法，模拟量测量方法以及数字/模拟显示型测量仪
公开(公告)号：US06412187B1
公开(公告)日：2002-07-02
申请号：US09480998
申请日：2000-01-11
申请人： Koji Sasaki , Yoshitaka Kuji , Yuichi Ichikawa , Mikio Suzuki , Norihide Tsuyuki , Hiroyuki Ohta
发明人： Koji Sasaki , Yoshitaka Kuji , Yuichi Ichikawa , Mikio Suzuki , Norihide Tsuyuki , Hiroyuki Ohta
IPC分类号： G01B322
CPC分类号： G01B3/004 , G01D7/002
摘要： The present invention provides an analog quantity display method of counting displacement of a probe disposed in contact with an object to be measured and analog-displaying the obtained count value by an analog display section as an analog quantity. If a peak value of the count value exceeds a possible analog-display range of the analog display section, an offset provided for the analog-displayed count value is updated in such a manner that the peak value is displayed within the possible analog-display range. Further, an analog quantity measuring method is provided, which comprises counting displacement of the probe, compares the obtained count value with a peak value of the count value, holds the count value as a new peak value depending upon a result of the comparison, and executes the comparison and the holding of the peak value again if the difference between the present peak value and the present count value exceeds a predetermined value. The analog quantity display and measuring methods are applicable to a digital/analog display type measuring instrument comprising a counter for counting the displacement of the probe in contact with the measured object, a digital display section for digitally displaying the count value, and an analog display section located adjacent to the digital display section, for displaying the count value as the bar graph comprising the large number of analog bars arranged in juxtaposition in one direction.
摘要翻译：本发明提供了一种模拟量显示方法，用于计数与待测物体接触的探针的位移，并以模拟量模拟显示所获得的计数值。如果计数值的峰值超过模拟显示部分的可能的模拟显示范围，则为模拟显示的计数值提供的偏移被更新，使得峰值显示在可能的模拟显示范围内。此外，提供了一种模拟量测量方法，其包括计数探头的位移，将获得的计数值与计数值的峰值进行比较，根据比较结果将计数值保持为新的峰值，以及如果当前峰值和当前计数值之间的差值超过预定值，则再次执行比较和峰值保持。模拟量显示和测量方法适用于数字/模拟显示型测量仪器，其包括用于计数与测量对象接触的探头的位移的计数器，用于数字显示计数值的数字显示部分和模拟显示器位于与数字显示部分相邻的部分，用于将计数值显示为包括以一个方向并列排列的大量模拟条的条形图。

83. 发明授权

US06326284B1 Semiconductor device and production thereof 失效
标题翻译：半导体器件及其制造
公开(公告)号：US06326284B1
公开(公告)日：2001-12-04
申请号：US08610488
申请日：1996-03-04
申请人： Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasuhide Hagiwara , Hiroyuki Ohta , Asao Nishimura
发明人： Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasuhide Hagiwara , Hiroyuki Ohta , Asao Nishimura
IPC分类号： H01L2176
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/28211 , H01L21/321 , H01L21/76202 , H01L29/518
摘要： A semiconductor device produced by forming an oxide film on a substrate, heat treating the oxide film at a temperature of 800° C. or higher in an inert atmosphere, followed by conventional steps for formation of a transistor, is improved in electrical reliability due to relaxation of stress generated in the oxide film or in the surface of substrate.
摘要翻译：通过在基板上形成氧化膜而制造的半导体装置，在惰性气氛中，在800℃以上的温度下进行氧化膜的热处理，接着是用于形成晶体管的常规步骤，由于松弛在氧化膜或衬底表面产生的应力。

84. 发明授权

US06319580B1 Recording disk and producing method therefor 失效
标题翻译：记录磁盘及其制作方法
公开(公告)号：US06319580B1
公开(公告)日：2001-11-20
申请号：US09333960
申请日：1999-06-16
申请人： Tatsuo Araki , Hiroyuki Ohta , Susumu Shibasaki , Hiroyuki Hirata , Osamu Ishizaki , Tsuyoshi Maro
发明人： Tatsuo Araki , Hiroyuki Ohta , Susumu Shibasaki , Hiroyuki Hirata , Osamu Ishizaki , Tsuyoshi Maro
IPC分类号： B32B302
CPC分类号： G11B5/8408 , G11B7/24 , G11B7/24047 , G11B7/26 , G11B7/268 , G11B9/00 , G11B11/00 , G11B11/10584 , G11B23/0021 , Y10S428/913 , Y10T428/21
摘要： A recording disk comprises a substrate including a plastic material, and an overlay arranged over the substrate and including a recording substance for recording therein an information, and a radially-outer periphery of the overlay is received within a radially-outer periphery of the substrate as seen in an axial direction of the recording disk.
摘要翻译：记录盘包括一个包括塑料材料的基片和布置在该基片上的覆盖层，并包括用于在其中记录信息的记录物质，该覆盖物的一个径向外周被接收在该基片的一个径向外周边内，在记录盘的轴向看到。

85. 发明授权

US5914214A Method for manufacturing an optical information recording medium 失效
标题翻译：光学信息记录介质的制造方法
公开(公告)号：US5914214A
公开(公告)日：1999-06-22
申请号：US982650
申请日：1997-12-02
申请人： Hiroyuki Ohta , Yoshitaka Sakaue , Eiji Ohno , Noboru Yamada
发明人： Hiroyuki Ohta , Yoshitaka Sakaue , Eiji Ohno , Noboru Yamada
IPC分类号： G11B7/0055 , G11B7/006 , G11B7/243 , G11B7/2534 , G11B7/2542 , G11B7/257 , G11B7/2578 , G11B7/2585 , G11B7/26 , G11B7/24
CPC分类号： G11B7/252 , G11B7/2578 , G11B7/26 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/2571 , G11B2007/25713 , G11B7/00557 , G11B7/006 , G11B7/2534 , G11B7/2542 , G11B7/2585 , Y10S430/146
摘要： A method for manufacturing an optical information recording medium having an excellent mechanical strength, thermal stability, and improved overwrite cycle property can be provided by forming the dielectric layer by using a mixed target comprising ZnS and SiO.sub.2 in an atmosphere comprising rare gas and at least oxygen at the side where the dielectric layer does not contact to the recording layer. The optical information recording medium is manufactured by using the substrate, the recording layer comprising a material that varies reversibly between the optically identifiable states by an irradiation of a laser beam, and the dielectric layer at least one side of which has a two-layered structure at the upper and lower sides of the recording layer. At least one of the dielectric layers that does not contact to the recording layer is formed by using a mixed target comprising ZnS and SiO.sub.2 in a mixed atmosphere comprising rare gas and oxygen.
摘要翻译：可以通过在包含稀有气体和至少氧气的气氛中使用包含ZnS和SiO 2的混合靶来形成介电层来提供具有优异的机械强度，热稳定性和改进的重写循环性能的光学信息记录介质的制造方法在电介质层不与记录层接触的一侧。光学信息记录介质是通过使用基板来制造的，该记录层包括通过激光束的照射在光学可识别状态之间可逆地变化的材料，以及至少一侧具有两层结构的介电层在记录层的上侧和下侧。通过在包含稀有气体和氧气的混合气氛中使用包含ZnS和SiO 2的混合靶，形成不与记录层接触的介电层中的至少一个。

86. 发明授权

US5643805A Process for producing a bipolar device 失效
标题翻译：用于制造双极器件的方法
公开(公告)号：US5643805A
公开(公告)日：1997-07-01
申请号：US401678
申请日：1995-03-10
申请人： Hiroyuki Ohta , Hideo Miura , Hiroo Masuda , Yoichi Tamaki , Takahide Ikeda , Asao Nishimura , Takashi Hashimoto
发明人： Hiroyuki Ohta , Hideo Miura , Hiroo Masuda , Yoichi Tamaki , Takahide Ikeda , Asao Nishimura , Takashi Hashimoto
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8249 , H01L23/485 , H01L27/06 , H01L29/732 , H01L21/265
CPC分类号： H01L23/4855 , H01L23/485 , H01L2924/0002 , Y10S148/01 , Y10S148/124 , Y10S148/135
摘要： A bipolar device having a level difference between the contact area level of a base electrode and a base region in a silicon substrate, and the contact area level of an emitter electrode and an emitter region in the silicon substrate in the range of 0.03 .mu.m to 0.1 .mu.m by removing undesirable impurities from the emitter region and a predetermined horizontal distance between a sidewall and a device isolation film does not generate dislocation and show good electric characteristics.
摘要翻译：具有硅基板中的基极的接触面积电平与基极区域之间的电平差的硅双极器件，以及硅基板的发射电极和发射极区域的接触面积电平为0.03μm〜通过从发射极区域去除不需要的杂质并且侧壁和器件隔离膜之间的预定水平距离不产生位错并且显示出良好的电特性，0.1μm。

87. 发明授权

US5491888A Method for mounting component chips and an apparatus therefor 失效
标题翻译：组件芯片的安装方法及其装置
公开(公告)号：US5491888A
公开(公告)日：1996-02-20
申请号：US316554
申请日：1994-09-30
申请人： Hiroshi Sakurai , Hitoshi Onodera , Kenichi Indo , Hiroyuki Ohta
发明人： Hiroshi Sakurai , Hitoshi Onodera , Kenichi Indo , Hiroyuki Ohta
IPC分类号： H05K13/04 , H05K13/08 , H05K3/30 , B23P19/00
CPC分类号： H05K13/08 , H05K13/0413 , Y10T29/4913 , Y10T29/49131 , Y10T29/53178 , Y10T29/53261
摘要： A number of embodiments of component pick up and mounting devices that include a plurality of pick up heads. The speed of the device is improved by providing sensing of the orientation of the components picked up by the pick up devices in a common sensing station. The device also includes means whereby one of the pick up devices may pick up a component large enough to interfere with the picking up of components by the other pick up devices by precluding the picking up of components by the other pick up devices when such a component is picked up by the one pick up device. The device further increases the speed by permitting pick up, recognition and correction of component orientation and mounting either simultaneously or operation of two or more of these functions at the same time on different pick up devices.
摘要翻译：组件拾取和安装装置的多个实施例包括多个拾取头。通过提供在公共检测站中拾取装置拾取的部件的取向的感测来改善装置的速度。该装置还包括这样的装置，其中拾取装置中的一个拾取装置可以拾取足够大的部件以通过排除其它拾取装置拾取部件从而妨碍其他拾取装置的拾取，当这种部件被拾取装置拾起。该装置通过允许拾取，识别和校正元件取向并同时安装或同时安装两个或多个这些功能同时在不同拾取装置上进一步提高速度。

88. 发明授权

US5444302A Semiconductor device including multi-layer conductive thin film of polycrystalline material 失效
标题翻译：半导体器件包括多层导电薄膜的多晶材料
公开(公告)号：US5444302A
公开(公告)日：1995-08-22
申请号：US168506
申请日：1993-12-22
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L23/48 , H01L29/46
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon 6 oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的硅6氧化膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成栅电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

89. 发明授权

US5229643A Semiconductor apparatus and semiconductor package 失效
标题翻译：半导体装置和半导体封装
公开(公告)号：US5229643A
公开(公告)日：1993-07-20
申请号：US735353
申请日：1991-07-24
申请人： Hiroyuki Ohta , Norio Ishitsuka , Akihiro Yaguchi , Sueo Kawai , Nobuo Owada , Shigeki Hirasawa
发明人： Hiroyuki Ohta , Norio Ishitsuka , Akihiro Yaguchi , Sueo Kawai , Nobuo Owada , Shigeki Hirasawa
IPC分类号： H01L23/34 , H01L23/367 , H01L23/433 , H01L23/495 , H01L27/00
CPC分类号： H01L23/49568 , H01L23/3677 , H01L23/433 , H01L23/4334 , H01L2224/16145 , H01L2224/48091 , H01L2224/48247 , H01L2224/73253 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , H01L2924/18161
摘要： The heat transfer path (the heat radiating portion) from a position very near the semiconductor device as the heat source to the surface of the semiconductor apparatus is made of a material having a large heat conductivity thereby to more rapidly transfer the heat generated in the p-n junction to the surface of the semiconductor apparatus or the outside. This arrangement can cope with that the calorific power is increased as the integration is increased. The formation of the good heat conductive material from the surface of the apparatus to the heat source through the multilayer structure film can be attained by means of the CVD technique.
摘要翻译：从作为热源的半导体装置非常接近的位置到半导体装置的表面的热传递路径（散热部）由具有大的导热性的材料制成，从而更快速地传递在pn中产生的热量结到半导体器件的表面或外部。这种布置可以应付随着集成度增加而增加热量。通过CVD技术可以获得从装置的表面到热源通过多层结构膜形成良好的导热材料。

90. 发明授权

US09581427B2 Mechanical quantity measuring device 有权
标题翻译：机械量测量装置
公开(公告)号：US09581427B2
公开(公告)日：2017-02-28
申请号：US14363138
申请日：2011-12-06
申请人： Kisho Ashida , Hiroyuki Ohta
发明人： Kisho Ashida , Hiroyuki Ohta
IPC分类号： G01L1/18 , G01B7/16
CPC分类号： G01B7/16 , G01B7/18 , G01L1/18
摘要： A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region.
摘要翻译：机械量测量装置（半导体应变传感器）具有半导体芯片，该半导体芯片包括形成在半导体衬底的前表面上的多个压阻元件，与该半导体芯片的多个电极电连接的引线单元，以及板构件连接到半导体芯片的后表面。此外，板构件包括面对半导体芯片的后表面的第一区域和与第一区域相邻设置的第二区域，并且使第一区域中的板构件的厚度大于第二区域中的厚度。

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