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81. 发明授权

US5738968A Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US5738968A
公开(公告)日：1998-04-14
申请号：US823585
申请日：1997-03-25
申请人： Hiroshi Hosoda , Taku Hirayama , Kousuke Doi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Taku Hirayama , Kousuke Doi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： The present invention provides a positive photoresist composition exhibiting superior sensitivity, definition and thermostability, and in addition, having excellent focal depth range properties. The positive photoresist composition comprises (A) an alkali-soluble resin; (B) a quinonediazide group-containing compound; and (C), for example, bis(4-hydroxy-2,3,5-trimethylphenyl)-2-hydroxyphenylmethane.
摘要翻译：本发明提供了具有优异的灵敏度，定义和热稳定性的正性光致抗蚀剂组合物，另外具有优异的聚焦深度范围特性。正型光致抗蚀剂组合物包含（A）碱溶性树脂; （B）含醌二叠氮化物基团的化合物; 和（C），例如，双（4-羟基-2,3,5-三甲基苯基）-2-羟基苯基甲烷。

82. 发明授权

US5614251A Method and liquid coating composition for the formation of silica-based coating film on substrate surface 失效
标题翻译：用于在基材表面形成二氧化硅基涂膜的方法和液体涂料组合物
公开(公告)号：US5614251A
公开(公告)日：1997-03-25
申请号：US564710
申请日：1995-11-29
申请人： Yoshinori Sakamoto , Yoshio Hagiwara , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Yoshinori Sakamoto , Yoshio Hagiwara , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： C08G77/18 , C03C1/00 , C08G77/06 , C09D183/02 , C09D183/04 , C09D183/05 , B05D3/02
CPC分类号： C03C1/008 , C09D183/02 , C09D183/04
摘要： Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydrolysis-cocondensation product of(a) a first hydrolyzable silane compound represented by the general formulaHSi(OR).sub.3, in which each R is, independently from the others, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and(b) a second hydrolyzable silane compound represented by the general formulaSi(OR).sub.4, in which each R has the same meaning as defined above,in a molar ratio of (a):(b) in the range from 1:9 to 9:1; and (B) an organic solvent to dissolve the component (A). The storage stability of the coating composition can be improved by removing the alcohol contained therein as the hydrolysis product of the silane compounds to such a content as not to exceed 15% by weight.
摘要翻译：提出了一种液体涂料组合物，用于形成具有良好保存稳定性的硅质涂膜，用于各种基材表面的保护，调平或电绝缘。该组合物是一种均匀溶液，其包含：（A）（a）由通式为H（OR）3表示的第一可水解硅烷化合物的部分共水解 - 缩聚产物，其中每个R独立地为烷基具有1至4个碳原子或苯基，和（b）由通式Si（OR）4表示的第二可水解硅烷化合物，其中每个R具有与上述相同的含义，摩尔比为（a）：（b）在1：9至9：1的范围内; 和（B）有机溶剂以溶解组分（A）。通过将其中含有的醇作为硅烷化合物的水解产物除去不超过15重量％的含量，可以提高涂料组合物的保存稳定性。

83. 发明授权

US5601961A High-sensitivity positive-working photoresist composition 失效
标题翻译：高灵敏度正性光刻胶组合物
公开(公告)号：US5601961A
公开(公告)日：1997-02-11
申请号：US412889
申请日：1995-03-29
申请人： Kazuhiko Nakayama , Taku Nakao , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kazuhiko Nakayama , Taku Nakao , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , C08G8/08 , G03F7/023 , H01L21/027
CPC分类号： C08G8/08 , G03F7/0236
摘要： Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin. Namely, the phenolic mixture for the novolac (a) consists of m- and p-cresols, the phenolic mixture for the novolac (b1) consists of m-cresol and a xylenol, the phenolic mixture for the novolac (b2) consists of m- and p-cresols and a xylenol, the phenolic mixture for the novolac (c1) consists of m-cresol and a trimethyl phenol and the phenolic mixture for the novolac (c2) consists of m- and p-cresols and a trimethyl phenol each in a specified molar proportion of the constituent phenolic compounds.
摘要翻译：公开了一种改进的正性光致抗蚀剂组合物，其包含作为成膜剂的碱溶性树脂和含醌二叠氮基的化合物作为感光剂。本发明组合物最具特色的特征在于碱溶性树脂的独特配方，其是选自酚醛清漆树脂（a），（b1）或（b2）和（c1）中的两种或三种酚醛清漆树脂的组合，或（c2），其各自的特征在于酚类化合物作为与醛化合物进行缩合反应以形成酚醛清漆树脂的混合物的独特配方。即，酚醛清漆（a）的酚类混合物由间甲酚和对甲酚组成，酚醛清漆（b1）的酚类混合物由间甲酚和二甲苯酚组成，酚醛清漆（b2）的酚类混合物由 - 酚甲酚和二甲苯酚，酚醛清漆（c1）的酚类混合物由间甲酚和三甲酚组成，酚醛清漆（c2）的酚类混合物由间甲苯酚和对甲酚和三甲酚组成以规定摩尔比例的组成酚类化合物。

84. 发明授权

US5401617A Method for forming positive patterned resist layer on tantalum substrate utilizing quinone diazide composition with aromatic hydroxy additive 失效
标题翻译：使用具有芳族羟基添加剂的醌二氮化物组合物在钽基板上形成阳图案化抗蚀剂层的方法
公开(公告)号：US5401617A
公开(公告)日：1995-03-28
申请号：US230883
申请日：1994-04-20
申请人： Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/023 , G03F7/085 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , G03F7/30
CPC分类号： G03F7/0226
摘要： Proposed is an alkali-soluble, positive-working photosensitive resin composition which can be used as a material for forming a finely patterned resist layer on the surface of a metallic substrate such as tantalum to exhibit excellent adhesion of the patterned resist layer to the substrate surface. The composition comprises, in addition to a novolac resin as a film-forming agent and a naphthoquinone diazide group-containing compound as a photosensitizer, an aromatic compound having two benzene rings and at least five phenolic hydroxy groups in a molecule such as pentahydroxy and hexahydroxy benzophenone compounds as an adhesion improver.
摘要翻译：提出了一种碱溶性正性感光性树脂组合物，其可以用作在诸如钽的金属基材的表面上形成精细图案化的抗蚀剂层的材料，以显示出图案化的抗蚀剂层与基材表面的极好的粘附性。该组合物除了作为成膜剂的酚醛清漆树脂和含有萘醌二叠氮基的化合物作为光敏剂之外，还包括分子中具有两个苯环和至少五个酚羟基的芳族化合物，例如五羟基和六羟基二苯甲酮化合物作为粘合改进剂。

85. 发明授权

US5281508A Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol 失效
标题翻译：含有邻苯二酚二叠氮磺酸酯和酚醛清漆树脂的正性光致抗蚀剂由35至43％的间甲酚和65至57％的对甲酚组成，基本上不存在邻甲酚
公开(公告)号：US5281508A
公开(公告)日：1994-01-25
申请号：US935131
申请日：1992-08-21
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： C08G8/08 , C08K5/42 , G03F7/032 , G03F7/023
CPC分类号： G03F7/032 , C08G8/08 , C08K5/42
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
摘要翻译：提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

86. 发明授权

US5100758A Positive-working photoresist composition containing quinone diazide compound, novolak resin and alkyl pyruvate solvent 失效
标题翻译：含有醌二叠氮化合物，酚醛清漆树脂和丙酮酸烷基酯溶剂的正性光致抗蚀剂组合物
公开(公告)号：US5100758A
公开(公告)日：1992-03-31
申请号：US623014
申请日：1990-12-06
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/004 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0048
摘要： A proposal is made for the use of an alkyl pyruvate or a solvent mixture mainly composed thereof as a solvent in a positive-working photoresist composition comprising an alkali-soluble novolac resin as the film-forming ingredient and a quinone diazide group-containing compound as the photosensitive ingredient. By virtue of the use of the unique solvent, the photoresist composition is advantageous in the outstandingly high stability with little moisture absorption from ambience not to cause precipitation of solid matters in addition to the quite satisfactory properties in other respects as a photoresist composition.
摘要翻译：提出在主要由它们构成的作为溶剂的烷基丙酮酸盐或其溶剂混合物中使用含有碱溶性酚醛清漆树脂作为成膜成分的正性光致抗蚀剂组合物和含醌二叠氮基化合物作为感光成分。由于使用独特的溶剂，光致抗蚀剂组合物除了在其它方面作为光致抗蚀剂组合物的相当令人满意的性能外，还具有突出的高稳定性，而且从环境几乎没有吸湿性而不会引起固体物质沉淀。

87. 发明授权

US4944893A Remover solution for resist 失效
标题翻译：去除溶液为抗蚀剂
公开(公告)号：US4944893A
公开(公告)日：1990-07-31
申请号：US243001
申请日：1988-09-12
申请人： Hatsuyuki Tanaka , Masakazu Kobayashi , Kazumasa Wakiya , Toshimasa Nakayama
发明人： Hatsuyuki Tanaka , Masakazu Kobayashi , Kazumasa Wakiya , Toshimasa Nakayama
IPC分类号： C11D7/50 , G03C11/00 , G03F7/00 , G03F7/42 , H01L21/027
CPC分类号： C11D7/5022 , G03F7/426
摘要： The remover composition of the invention is advantageous in respect of the thermal stability without precipitation of insoluble matters when the remover is used prolongedly in a removing work of patterned resist, e.g., photoresist, layer in the manufacturing process of semiconductor devices. The inventive remover composition characteristically contains 1 to 50,000 ppm by weight of an acetylene alcohol such as 3-methyl-2-butyn-3-ol added to an organic remover solution composed of an alkylbenzene sulfonic acid, phenol compound, halogenated hydrocarbon compound and/or aromatic hydrocarbon compound.
摘要翻译：当在半导体器件的制造过程中图案化抗蚀剂例如光致抗蚀剂层的去除工作中延长使用去除剂时，本发明的去除剂组合物在热稳定性方面是有利的。本发明的去除剂组合物特征在于包含1至50,000ppm重量的乙炔醇，例如3-烷基苯磺酸，酚化合物，卤代烃化合物和/或其混合物所组成的有机去除剂溶液中的3-甲基-2-丁炔-3-醇，或芳族烃化合物。

88. 发明授权

US4906549A Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms 失效
标题翻译：醌二叠层磺酸酯和由具有2-6个碳原子的间甲酚，对甲酚和脂族苯酚制成的酚醛清漆的正性光致抗蚀剂组合物
公开(公告)号：US4906549A
公开(公告)日：1990-03-06
申请号：US182848
申请日：1988-04-18
申请人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Toshimasa Nakayama
发明人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Toshimasa Nakayama
IPC分类号： G03C1/72 , C08G8/12 , C08G8/24 , C08K5/43 , C08L61/08 , G03F7/023 , G03F7/025 , G03F7/22 , H01L21/027
CPC分类号： G03F7/0236 , C08G8/12 , C08G8/24 , C08K5/43
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacturing of semiconductor devices such as VLSIs with high fidelity is proposed. The composition comprises: (A) 100 parts by weight of a phenolic novolac resin prepared by the condensation reaction of a specific ternary mixture of three kinds of phenolic compounds and formaldehyde; and (B) 20-60 parts by weight of a photosensitizer which is preferably an ester of naphthoquinone diazidesulfonic acid and a hydroxylated benzophenone compound. The phenolic mixture is composed of 10-45% by weight of m-cresol, 35-88% by weight of p-cresol and 2-30% by weight of a substituted phenol represented by the general formula R.C.sub.6 H.sub.4.OH, in which R is a monovalent aliphatic hydrocarbon group having 2-6 carbon atoms selected from alkyl and alkenyl groups.
摘要翻译：提出了适用于制造半导体器件（例如具有高保真度的VLSI）的精细图案化的正性光致抗蚀剂组合物。该组合物包括：（A）100重量份通过三种酚类化合物和甲醛的特定三元混合物的缩合反应制备的酚醛清漆树脂; 和（B）20-60重量份的优选萘醌二叠氮磺酸和羟基化二苯甲酮化合物的酯的光敏剂。酚类混合物由10-45重量％的间甲酚，35-88重量％的对甲酚和2-30重量％的由通式R.C 6 H 4.OH表示的取代的苯酚组成，在其中R为选自烷基和烯基的2-6个碳原子的一价脂族烃基。

89. 发明授权

US4820621A Developer solution for positive-working photoresist compositions comprising a base and a non-ionic surfactant 失效
标题翻译：用于正性光致抗蚀剂组合物的显影剂溶液，其包含碱和非离子表面活性剂
公开(公告)号：US4820621A
公开(公告)日：1989-04-11
申请号：US67312
申请日：1987-06-26
申请人： Hatsuyuki Tanka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03C1/72 , G03C1/10 , G03F7/00 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30 , G03C5/18 , G03F7/26
CPC分类号： G03F7/322
摘要： The aqueous developer solution for a positive-working photoresist composition comprises, as dissolved in an aqueous solvent, a water-soluble organic basic compound and a specific non-ionic surface active agent which may be an alkyl-substituted phenyl or naphthyl ether of polyoxyethyleneglycol in a specified concentration. The developer solution is advantageous in respect of the completeness of removal of film residua and scums from the substrate surface after development so that the patterned photoresist layer is imparted with greatly increased accuracy and fidelity of the pattern reproduction.
摘要翻译：用于正性光致抗蚀剂组合物的水性显影剂溶液包含溶解在水性溶剂中的水溶性有机碱性化合物和特定的非离子表面活性剂，其可以是聚氧乙烯二醇的烷基取代的苯基或萘基醚指定浓度。显影剂溶液在显影后从基材表面除去膜残余物和浮渣的完整性是有利的，使得图案化的光致抗蚀剂层具有大大提高的图案再现的精度和保真度。

90. 发明授权

US4784937A Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant 失效
标题翻译：用于正性光致抗蚀剂的显影液，其包含无金属离子的有机碱和阴离子表面活性剂
公开(公告)号：US4784937A
公开(公告)日：1988-11-15
申请号：US892646
申请日：1986-08-04
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.
摘要翻译：本发明的正性光致抗蚀剂组合物的含水显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，含有50-5000ppm阴离子或非离子表面活性剂非离子型含氟表面活性剂。与没有这种表面活性剂的常规显影溶液相比，本发明的显影溶液在图案化光致抗蚀剂层的均匀性方面是有利的，并且具有较高的灵敏度和较小的显影温度依赖性。

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