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1. 发明授权

US5601961A High-sensitivity positive-working photoresist composition 失效
标题翻译：高灵敏度正性光刻胶组合物
公开(公告)号：US5601961A
公开(公告)日：1997-02-11
申请号：US412889
申请日：1995-03-29
申请人： Kazuhiko Nakayama , Taku Nakao , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kazuhiko Nakayama , Taku Nakao , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , C08G8/08 , G03F7/023 , H01L21/027
CPC分类号： C08G8/08 , G03F7/0236
摘要： Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin. Namely, the phenolic mixture for the novolac (a) consists of m- and p-cresols, the phenolic mixture for the novolac (b1) consists of m-cresol and a xylenol, the phenolic mixture for the novolac (b2) consists of m- and p-cresols and a xylenol, the phenolic mixture for the novolac (c1) consists of m-cresol and a trimethyl phenol and the phenolic mixture for the novolac (c2) consists of m- and p-cresols and a trimethyl phenol each in a specified molar proportion of the constituent phenolic compounds.
摘要翻译：公开了一种改进的正性光致抗蚀剂组合物，其包含作为成膜剂的碱溶性树脂和含醌二叠氮基的化合物作为感光剂。本发明组合物最具特色的特征在于碱溶性树脂的独特配方，其是选自酚醛清漆树脂（a），（b1）或（b2）和（c1）中的两种或三种酚醛清漆树脂的组合，或（c2），其各自的特征在于酚类化合物作为与醛化合物进行缩合反应以形成酚醛清漆树脂的混合物的独特配方。即，酚醛清漆（a）的酚类混合物由间甲酚和对甲酚组成，酚醛清漆（b1）的酚类混合物由间甲酚和二甲苯酚组成，酚醛清漆（b2）的酚类混合物由 - 酚甲酚和二甲苯酚，酚醛清漆（c1）的酚类混合物由间甲酚和三甲酚组成，酚醛清漆（c2）的酚类混合物由间甲苯酚和对甲酚和三甲酚组成以规定摩尔比例的组成酚类化合物。

2. 发明授权

US5434031A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive 失效
标题翻译：含有特定羟基化合物添加剂的正性萘醌二叠氮光致抗蚀剂组合物
公开(公告)号：US5434031A
公开(公告)日：1995-07-18
申请号：US153100
申请日：1993-11-17
申请人： Taku Nakao , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Taku Nakao , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03C1/61 , G03F7/022 , G03F7/023
CPC分类号： G03F7/0226 , G03C1/61
摘要： Disclosed is a positive-working photoresist composition suitable for use in the photolithographic fine patterning work in the manufacture of electronic devices such as VLSIs. The composition comprises, in addition to an alkali-soluble novolac resin as a film-forming ingredient and an esterification product of naphthoquinone-1,2-diazide sulfonic acid as a photosensitive ingredient, a unique additive compound which is an alkyl or aralkyl ester of 2-hydroxy benzoic acid, such as benzyl salicylate, or a phenol compound substituted at least one alkyl group such as 2-tert-butyl-4-methyl phenol. By virtue of the addition of this unique additive, the inventive photoresist composition exhibits an excellent performance of suppressing the standing wave effect in addition to the excellent photosensitivity, resolving power and depth of focusing in the patterning exposure to light as well as good heat resistance of the patterned resist layer.
摘要翻译：公开了一种适用于制造诸如VLSI的电子设备的光刻精细图案化工作中的正性光致抗蚀剂组合物。除了作为成膜成分的碱溶性酚醛清漆树脂和萘醌-1,2-二叠氮磺酸作为感光成分的酯化产物之外，组合物还包含作为感光成分的独特的添加剂化合物，其为烷基或芳烷基酯 2-羟基苯甲酸，如水杨酸苄酯，或取代至少一个烷基的酚化合物如2-叔丁基-4-甲基苯酚。通过添加这种独特的添加剂，本发明的光致抗蚀剂组合物除了在图案曝光中具有优异的光敏性，分辨能力和聚焦深度以及良好的耐热性外，还表现出优异的抑制驻波效应的性能图案化的抗蚀剂层。

3. 发明授权

US5478692A Positive-working naphthoquinone diazide sulfonic acid ester photoresist composition containing 4,4'-bis(dialkylamino)benzophenone 失效
标题翻译：含有4,4'-双（二烷基氨基）二苯甲酮的正性萘醌二叠氮磺酸酯光致抗蚀剂组合物
公开(公告)号：US5478692A
公开(公告)日：1995-12-26
申请号：US350128
申请日：1994-11-29
申请人： Kousuke Doi , Taku Nakao , Remi Numata , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Taku Nakao , Remi Numata , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/031 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： Proposed is a novel positive-working photoresist composition suitable for use in the fine patterning works in the manufacture of electronic devices and capable of exhibiting excellent performance with high resolution, high sensitivity, wide range of focusing depth, large exposure dose latitude and other characteristics. The photoresist composition is formulated, in addition to the basic ingredients of an alkali-soluble novolac resin as a film-forming agent and photosensitive ingredient such as an ester of naphthoquinone-1,2-diazide sulfonic acid and a polyhydroxy compound, with a limited amount of 4,4'-bis(dialkylamino) benzophenone, e.g., 4,4'-bis(diethylamino) benzophenone, preferably, in combination with a polyhydroxy compound such as 4,6-bis[1-methyl-1-(4-hydroxyphenyl)ethyl]-1,3-dihydroxy phenol.
摘要翻译：提出了一种新型正性光致抗蚀剂组合物，适用于电子器件制造中的精细图案化工作，能够以高分辨率，高灵敏度，宽范围的聚焦深度，较大的曝光剂量纬度等特性表现出优异的性能。光致抗蚀剂组合物除了作为成膜剂的碱溶性酚醛清漆树脂的基本成分和萘醌-1,2-二叠氮磺酸和多羟基化合物的酯等感光成分以外，配合有限制 4,4'-双（二烷基氨基）二苯甲酮的量，例如4,4'-双（二乙基氨基）二苯甲酮，优选与多羟基化合物如4,6-双[1-甲基-1-（4 - 羟基苯基）乙基] -1,3-二羟基苯酚。

4. 发明授权

US5599653A Pattern forming method with selective silylation utilizing lithographic double-coated patterning plate with undercoat levelling layer 失效
标题翻译：具有选择性甲硅烷基化的图案形成方法利用具有底层平整层的平版印刷双层图案化板
公开(公告)号：US5599653A
公开(公告)日：1997-02-04
申请号：US573142
申请日：1995-12-15
申请人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/09 , G03F7/30 , G03F7/40
CPC分类号： G03F7/094
摘要： An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.
摘要翻译：在其中由基底，底涂层流平层和光致抗蚀剂层组成的双面图案化板以及其图案化方法中提出了一种改进。与由聚（甲基丙烯酸甲酯）树脂形成底层平整层的常规双面图案化板不同，本发明的层由特定共聚比例的甲基丙烯酸甲酯和甲基丙烯酸缩水甘油酯的共聚树脂形成，树脂为与2,2'，4,4'-四羟基二苯甲酮混合。由于使用这种独特的树脂组合物作为底层调平层，所以可以避免由于底层平整层和其上的光致抗蚀剂层之间的混合所引起的问题，以赋予图案化抗蚀剂层优异的性能。

5. 发明授权

US5498514A Lithographic double-coated patterning plate with undercoat levelling layer 失效
标题翻译：平版印刷双层涂层图案板，底层平整层
公开(公告)号：US5498514A
公开(公告)日：1996-03-12
申请号：US287895
申请日：1994-08-09
申请人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/09 , G03C1/815
CPC分类号： G03F7/094
摘要： An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.
摘要翻译：在其中由基底，底涂层流平层和光致抗蚀剂层组成的双面图案化板以及其图案化方法中提出了一种改进。与由聚（甲基丙烯酸甲酯）树脂形成底层平整层的常规双面图案化板不同，本发明的层由特定共聚比例的甲基丙烯酸甲酯和甲基丙烯酸缩水甘油酯的共聚树脂形成，树脂为与2,2'，4,4'-四羟基二苯甲酮混合。由于使用这种独特的树脂组合物作为底层调平层，所以可以避免由于底层平整层和其上的光致抗蚀剂层之间的混合所引起的问题，以赋予图案化抗蚀剂层优异的性能。

6. 发明授权

US5702862A Positive photoresist coating solution comprising a mixed solvent of propylene glycol monopropyl ether and 2-heptanone 失效
标题翻译：包含丙二醇单丙基醚和2-庚酮的混合溶剂的正性光致抗蚀剂涂料溶液
公开(公告)号：US5702862A
公开(公告)日：1997-12-30
申请号：US797663
申请日：1997-01-31
申请人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C09D5/00 , C09D11/00 , C09D161/02 , C09D161/04 , G03F7/004 , G03F7/022 , G03F7/20 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0048 , G03F7/022
摘要： A positive photoresist coating solution comprising (a) an alkali-soluble resin, (b) a quinone diazide group-containing compound, and (c) an organic solvent in an amount sufficient for dissolving said (a) and (b) components, wherein said organic solvent contains (i) propylene glycol monopropyl ether and (ii) 2-heptanone. The solution of the present invention exhibits excellent coating ability, sensitivity, thermostability, focal depth range, shape-profiling ability, and the like.
摘要翻译：一种正型光致抗蚀剂涂料溶液，其包含（a）碱溶性树脂，（b）含醌二叠氮化物基团的化合物和（c）足以溶解所述（a）和（b）组分的量的有机溶剂，其中所述有机溶剂含有（i）丙二醇单丙醚和（ii）2-庚酮。本发明的溶液表现出优异的涂布能力，灵敏度，热稳定性，焦深范围，形状分布能力等。

7. 发明授权

US06444394B1 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06444394B1
公开(公告)日：2002-09-03
申请号：US09521205
申请日：2000-03-08
申请人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
发明人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.
摘要翻译：公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，其中第一树脂的30-60％的羟基被酸解离的溶解性降低基团取代其中5〜20％的羟基被第一树脂中相同种类的酸解离基取代的第二树脂的重量比为1.9-9:1。

8. 发明授权

US07364831B2 Positive resist composition and resist pattern formation method 有权
标题翻译：正抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07364831B2
公开(公告)日：2008-04-29
申请号：US11123357
申请日：2005-05-06
申请人： Kouji Yonemura , Taku Nakao
发明人： Kouji Yonemura , Taku Nakao
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition includes a resin component (A) whose alkaline solubility changes by an action of an acid, an acid generator component (B), and polypropylene glycol, wherein the component (A) includes a resin component (A1) including a constitutional unit (a1) represented by general formula (I), a constitutional unit (a2) represented by general formula (II), and a constitutional unit (a3) having an acid dissociable dissolution inhibiting group, wherein R represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 3, wherein R represents a hydrogen atom or a methyl group, and R1 represents alkyl group having a carbon number of 1 to 5, and l represents an integer of 0 to 3.
摘要翻译：正型抗蚀剂组合物包括其酸溶性变化，酸发生剂组分（B）和聚丙二醇的碱溶性变化的树脂组分（A），其中组分（A）包括包含结构式由通式（I）表示的单元（a1），由通式（II）表示的结构单元（a2）和具有酸解离溶解抑制基团的结构单元（a3），其中R表示氢原子或甲基基，m表示1〜3的整数，其中R表示氢原子或甲基，R 1表示碳数为1至5的烷基，l表示整数为0至3。

9. 发明授权

US06605417B2 Method for decreasing surface defects of patterned resist layer 有权
标题翻译：降低图案化抗蚀剂层表面缺陷的方法
公开(公告)号：US06605417B2
公开(公告)日：2003-08-12
申请号：US09771563
申请日：2001-01-30
申请人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
IPC分类号： G03F700
CPC分类号： G03F7/38
摘要： Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether)disulfonic acids.
摘要翻译：公开了一种通过以下步骤获得的用于减小基板表面上的图案化光致抗蚀剂层的表面缺陷的方法，所述方法包括以下步骤：（a）在基板表面上形成正性化学扩增光致抗蚀剂组合物的光致抗蚀剂层，（b ）将光致抗蚀剂层图案化地曝光到光化射线，（c）对图案曝光的光致抗蚀剂层进行后曝光烘烤处理和（d）显影处理。可以通过使后曝光烘烤处理后的光致抗蚀剂层与pH为3.5以下的酸性水溶液接触1〜90秒来实现。酸性水溶液中所含的酸优选为芳香族磺酸，更优选为二苯基醚磺酸，例如十二烷基（二苯基醚）二磺酸。

10. 发明授权

US07094924B2 Method for decreasing surface defects of patterned resist layer 有权
公开(公告)号：US07094924B2
公开(公告)日：2006-08-22
申请号：US10354973
申请日：2003-01-31
申请人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Taku Nakao , Satoshi Maemori , Tatsuya Matsumi
IPC分类号： C07C309/00
CPC分类号： G03F7/38
摘要： Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.

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