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1. 发明授权

US08124312B2 Method for forming pattern, and material for forming coating film 有权
标题翻译：形成图案的方法和用于形成涂膜的材料
公开(公告)号：US08124312B2
公开(公告)日：2012-02-28
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译：提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

2. 发明申请

US20110195190A1 SURFACE TREATMENT LIQUID, SURFACE TREATMENT METHOD, HYDROPHOBILIZATION METHOD, AND HYDROPHOBILIZED SUBSTRATE 有权
标题翻译：表面处理液体，表面处理方法，疏水化方法和疏水化基材
公开(公告)号：US20110195190A1
公开(公告)日：2011-08-11
申请号：US13123341
申请日：2009-09-15
申请人： Jun Koshiyama , Kazumasa Wakiya
发明人： Jun Koshiyama , Kazumasa Wakiya
IPC分类号： B05D5/00 , C09D7/12
CPC分类号： G03F7/405 , C09K3/18 , G03F7/16 , G03F7/2041 , H01L21/306 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.
摘要翻译：公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

3. 发明申请

US20110000874A1 METHOD FOR STRIPPING PHOTORESIST 有权
标题翻译：剥离光刻胶的方法
公开(公告)号：US20110000874A1
公开(公告)日：2011-01-06
申请号：US12883592
申请日：2010-09-16
申请人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
发明人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
IPC分类号： C25F3/12
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译：公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。本发明提供一种剥离光致抗蚀剂的方法，其即使在不包括至少具有Cu布线和低介电层的基板的微图案中的O 2等离子体灰化处理的工艺中，也能够有效地剥离光刻胶膜和蚀刻残留物在其中，如在双镶嵌形成工艺中，并且另外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗腐蚀性。

4. 发明申请

US20100304312A1 CLEANING LIQUID USED IN PHOTOLITHOGRAPHY AND A METHOD FOR TREATING SUBSTRATE THEREWITH 有权
标题翻译：光刻胶中使用的清洁液和一种处理基材的方法
公开(公告)号：US20100304312A1
公开(公告)日：2010-12-02
申请号：US12845085
申请日：2010-07-28
申请人： Shigeru Yokoi , Kazumasa Wakiya , Koji Saito
发明人： Shigeru Yokoi , Kazumasa Wakiya , Koji Saito
IPC分类号： G03F7/20 , G03F7/42
CPC分类号： C11D11/0047 , C11D1/62 , C11D7/3209 , C11D7/3281 , C11D7/34 , G03F7/425 , G03F7/426
摘要： It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.
摘要翻译：公开了一种用于剥离和溶解膜厚度为10-150μm的光致抗蚀剂图案的清洗液，其含有（a）0.5-15质量％的季铵氢氧化物，例如四丙基氢氧化铵和四丁基氢氧化铵，（b） 65-97质量％的水溶性有机溶剂，例如二甲基亚砜或其与N-甲基-2-吡咯烷酮，sulforane等的混合溶剂，和（c）0.5-30质量％的水，以及用于处理基材。

5. 发明申请

US20100190112A1 Photoresist stripping solution and a method of stripping photoresists using the same 有权
标题翻译：光阻剥离溶液和使用其剥离光致抗蚀剂的方法
公开(公告)号：US20100190112A1
公开(公告)日：2010-07-29
申请号：US12662151
申请日：2010-04-01
申请人： Kazumasa Wakiya , Shigeru Yokoi
发明人： Kazumasa Wakiya , Shigeru Yokoi
IPC分类号： G03F7/20 , G03F7/42
CPC分类号： H01L21/02068 , C11D1/62 , C11D7/32 , C11D11/0047 , G03F7/425 , G03F7/426
摘要： A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding.
摘要翻译：一种光致抗蚀剂剥离溶液，其包含（a）特定的季铵氢氧化物，例如氢氧化四丁基铵，氢氧化四丙铵，氢氧化甲基三丁基铵或甲基三氢丙基氢氧化铵，（b）水溶性胺，（c）水，（d）腐蚀抑制剂和（ e）水溶性有机溶剂，组分（a）与组分（b）的混合比例在1:3至1:10的范围内，以及使用溶液剥离光致抗蚀剂的方法。本发明的剥离溶液确保有效保护Al，Cu和其它布线金属导体免受腐蚀以及光致抗蚀剂膜的有效剥离，后灰化残留物如修饰的光致抗蚀剂膜和金属沉积。它还确保有效剥离Si基残留物并有效保护基材（特别是Si基板的反面）免受腐蚀。

6. 发明申请

US20100090372A1 COATING FORMATION AGENT FOR PATTERN MICRO-FABRICATION, AND MICROPATTERN FORMATION METHOD USING THE SAME 审中-公开
标题翻译：用于图案微型制造的涂覆成型剂及使用其的微孔形成方法
公开(公告)号：US20100090372A1
公开(公告)日：2010-04-15
申请号：US12449024
申请日：2007-11-19
申请人： Kiyoshi Ishikawa , Atsushi Sawano , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Atsushi Sawano , Kazumasa Wakiya
IPC分类号： B29C61/02 , C09D133/00 , C09D139/06
CPC分类号： G03F7/40 , H01L21/0273
摘要： Provided are a coating formation agent for pattern micro-fabrication, and a method for forming a micropattern using the same, which enables: suppression and/or control of variation of the micro-fabrication size without being accompanied by defect generation following the micro-fabrication process even in ultramicro-fabrication particularly on the order of no greater than 120 nm, or a micro-fabrication process of a resist pattern with an increased aspect ratio; maintainance of a favorable resist pattern configuration after the micro-fabrication process while keeping the desired micro-fabrication size; and also avoidance of defects resulting from development of bacteria and the like after application of the coating formation agent for pattern micro-fabrication. The coating formation agent for pattern micro-fabrication of the present invention is a coating formation agent used for forming a micropattern by coating on a substrate having a photoresist pattern, the coating formation agent including: as component (a), a water soluble polymer; and, as component (b), at least one selected from quaternary ammonium hydroxide, alicyclic ammonium hydroxide and morpholinium hydroxide.
摘要翻译：提供了用于图案微制造的涂层形成剂以及使用其形成微图案的方法，其能够：抑制和/或控制微制造尺寸的变化，而不伴随着微制造后的缺陷产生即使在超微制造中，特别是不大于120nm的量级，或具有增加的纵横比的抗蚀剂图案的微制造工艺，在保持所需的微观制造尺寸的同时，在微细制造工艺之后维持良好的抗蚀剂图案构造; 并且还避免了在施加用于图案微加工的涂层形成剂之后由于细菌等的发展而导致的缺陷。本发明的图案微观制造用涂料形成剂是通过在具有光致抗蚀剂图案的基材上涂布形成微图案而形成的涂料形成剂，该涂料形成剂包括：作为组分（a），水溶性聚合物; 和作为组分（b）的至少一种选自季铵氢氧化物，脂环族氢氧化铵和氢氧化氢鎓。

7. 发明授权

US07442675B2 Cleaning composition and method of cleaning semiconductor substrate 有权
标题翻译：清洗组合物和清洗半导体衬底的方法
公开(公告)号：US07442675B2
公开(公告)日：2008-10-28
申请号：US10864394
申请日：2004-06-10
申请人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi , Makarem A. Hussein , Lana I. Jong , Shan Christopher Clark
发明人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi , Makarem A. Hussein , Lana I. Jong , Shan Christopher Clark
IPC分类号： C11D7/06 , C11D7/50 , C23G1/16 , C23G5/032
CPC分类号： G03F7/425 , C11D7/06 , C11D7/267 , C11D7/32 , C11D7/34 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/31133
摘要： A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
摘要翻译：洗涤剂组合物至少包含季铵氢氧化物，水溶性有机溶剂，水，防腐剂和氢氧化钾的总量的1质量％以下。该清洁组合物可以从半导体衬底的表面单独且有效地除去光致抗蚀剂膜，掩埋材料，金属残留物。

8. 发明申请

US20080026975A1 Rinsing Fluid for Lithography 失效
标题翻译：用于平版印刷的冲洗液
公开(公告)号：US20080026975A1
公开(公告)日：2008-01-31
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式其中R 1和R 2各自是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代的烷基，或R 1和R 2与它们所键合的SO 2 H 2基团一起并且氮原子可以形成五元或六元环; R f是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; 且R f'是至少部分氟化的具有8至20个碳原子的烷基。

9. 发明申请

US20070292808A1 Developing Solution Composition for Lithography and Method for Resist Pattern Formation 审中-公开
标题翻译：开发用于平版印刷的溶液组合物和抗蚀剂图案形成方法
公开(公告)号：US20070292808A1
公开(公告)日：2007-12-20
申请号：US11661317
申请日：2005-08-29
申请人： Jun Koshiyama , Kazumasa Wakiya , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/322
摘要： This invention provides a novel developing solution composition for lithography, which can efficiently reduce defects without varying the formulation of a resist composition per se and without sacrificing the quality of a resist pattern by the use thereof, and a novel method for resist pattern formation using the developing solution composition, which can reduce the occurrence of defects and can be combined with subsequent specific rinsing liquid treatment to control pattern collapse. The developing solution composition comprises a solution containing tetraalkylammonium hydroxide and at least one polymer selected from water soluble or alkali soluble polymers comprising monomer constituent units with a nitrogen-containing heterocyclic ring. A resist pattern is formed by the following steps: (1) the step of providing a resist film on a substrate; (2) the step of selectively exposing the resist film thorough a mask pattern; (3) the step of heating the film after exposure; and (4) the step of developing the film with the above composition.
摘要翻译：本发明提供了一种用于光刻的新颖的显影液组合物，其可以有效地减少缺陷，而不改变抗蚀剂组合物本身的配方，而不会因其使用而牺牲抗蚀剂图案的质量，并且使用这种方法开发溶液组合物，其可以减少缺陷的发生，并且可以与随后的特定漂洗液处理结合以控制图案崩溃。显影溶液组合物包含含有四烷基氢氧化铵和至少一种选自包含含有含氮杂环的单体构成单元的水溶性或碱溶性聚合物的聚合物的溶液。通过以下步骤形成抗蚀剂图案：（1）在基板上设置抗蚀剂膜的步骤; （2）通过掩模图案选择性地曝光抗蚀剂膜的步骤; （3）曝光后加热薄膜的步骤; 和（4）用上述组合物显影薄膜的步骤。

10. 发明申请

US20070037087A1 Photoresist stripping solution and a method of stripping photoresists using the same 审中-公开
标题翻译：光阻剥离溶液和使用其剥离光致抗蚀剂的方法
公开(公告)号：US20070037087A1
公开(公告)日：2007-02-15
申请号：US11503189
申请日：2006-08-14
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： G03C11/12
CPC分类号： G03F7/425 , G03F7/423 , G03F7/426 , H01L21/02071 , H01L21/31116
摘要： A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrof luoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al- and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.
摘要翻译：一种光致抗蚀剂剥离溶液，其包含（a）不含金属离子的碱的氢氟酸盐，（b）水溶性有机溶剂，（c）含巯基的缓蚀剂，和（d）水，和公开了使用其剥离光致抗蚀剂的方法。在使用氟化铵作为组分（a）的情况下，光致抗蚀剂剥离溶液还可以含有（e）氢氟酸与季铵氢氧化物的盐，例如四甲基氢氧化铵，四丙基氢氧化铵等，和/或链烷醇胺。本发明的光致抗蚀剂剥离溶液具有优异的保护Al和Cu基金属布线导体免受腐蚀，有效地剥离光致抗蚀剂膜和后灰化残留物的作用，并且没有腐蚀抑制剂的沉淀。

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