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81. 发明公开

KR1020050054316A 액정표시장치용 어레이기판과 제조방법 有权
标题翻译： LCD的基板及其制造方法
公开(公告)号：KR1020050054316A
公开(公告)日：2005-06-10
申请号：KR1020030087674
申请日：2003-12-04
申请人： 엘지디스플레이 주식회사
发明人： 김진영 , 조규철 , 이규태 , 정병화 , 강진규
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： 본 발명은 액정표시장치에 관한 것으로 특히, 액정표시장치용 어레이기판과 그 제조방법에 관한 것이다.
본 발명의 특징은 어레이기판에 구성하는 박막트랜지스터의 전극과 어레이 배선을 형성할 때, 버퍼금속(buffer metal)으로 몰리-티타늄 합금층(Mo-Ti alloy)을 사용하는 것을 특징으로 한다.
몰리-티타늄 합금층(Mo-Ti alloy)을 배리어층(barrier layer)으로 하고, 배리어층(barrier layer)에 원하는 저저항 금속을 적층하고 열을 가하면, 상기 합금층의 티타늄(Ti)성분이 외부로 확산되어 저저항 금속층을 감싸는 현상이 일어난다.
이와 같은 구성은 저저항 금속을 티타늄층으로 블로킹(blocking)하는 효과에 의해, 종래에 저저항 금속층을 사용함으로써 발생하였던 불량을 방지할 수 있기 때문에 저저항 금속층을 배선 및 전극의 재료로 사용하는 것이 가능하다.
따라서, 신호 지연 방지를 통한 고화질의 액정표시장치를 제작할 수 있고 더불어 대면적의 액정패널을 제작할 수 있는 장점이 있다.

82. 发明公开

KR1020050028380A 레지스트 제거용 조성물 有权
标题翻译：用于去除（照片）电阻的组合物
公开(公告)号：KR1020050028380A
公开(公告)日：2005-03-23
申请号：KR1020030064547
申请日：2003-09-17
申请人： 엘지디스플레이 주식회사 , 주식회사 동진쎄미켐
发明人： 채기성 , 조규철 , 권오남 , 이경묵 , 황용섭 , 김성배 , 장석창 , 윤석일
IPC分类号： G03F7/32
摘要： A composition is provided to remove a photoresist for patterning a copper membrane used as a metal wire of an electronic circuit or a display device, which is excellent in a removing ability and can minimize corrosion of a patterned copper membrane. The composition comprises: 10-30wt% of an alkyl alkanol amine compound selected from N-methylethanol amine, N-ethylethanol amine, diethyl ethanol amine, and dimethyl ethanol amine; 10-80wt% of a glycol ether or ethylene glycol compound selected from ethylene glycol methyl ether, diethylene glycol methyl ether, triethylene glycol, and etc.; 9.5-80pts.wt. of a polar solvent selected from N-methyl-2-pyrrolidone, N,N-dimethyl acetamide, N,N-dimethyl formamide, and etc.; 0.5-10pts.wt. of an anticorrosive agent selected from tolyltriazole, benzotriazole, mercapto benzodiazole, and etc.
摘要翻译：提供组合物以除去用于图案化用作电子电路或显示装置的金属线的铜膜的光致抗蚀剂，其具有优异的去除能力并且可以最小化图案化铜膜的腐蚀。该组合物包括：10-30重量％的选自N-甲基乙醇胺，N-乙基乙醇胺，二乙基乙醇胺和二甲基乙醇胺的烷基链烷醇胺化合物; 10-80重量％的选自乙二醇甲基醚，二甘醇甲基醚，三甘醇等的乙二醇醚或乙二醇化合物; 9.5-80pts.wt。的选自N-甲基-2-吡咯烷酮，N，N-二甲基乙酰胺，N，N-二甲基甲酰胺等的极性溶剂; 0.5-10pts.wt。的选自甲苯基三唑，苯并三唑，巯基苯并二唑等的防腐剂

83. 发明授权

KR100456373B1 구리 또는 구리/티타늄 식각액 有权
标题翻译： 구리또는구리/티타늄식각액
公开(公告)号：KR100456373B1
公开(公告)日：2004-11-09
申请号：KR1020010089324
申请日：2001-12-31
申请人： 솔브레인 주식회사 , 엘지디스플레이 주식회사
发明人： 조규철 , 채기성 , 황용섭 , 권오남 , 이경묵 , 백귀종 , 이태형
IPC分类号： G02F1/13
CPC分类号： H01L21/32134 , C23F1/18 , C23F1/26 , Y10S436/80
摘要： An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF 2 , and water.
摘要翻译：一种蚀刻液，用于蚀刻作为用于（a）的薄膜晶体管的栅电极，源电极和漏电极之一的铜单金属层和铜（Cu）/钛（Ti）双金属层之一液晶显示器（LCD）装置包括过硫酸氢钾，含氟化合物，还原剂和弱氧化剂中的一种，蚀刻速率限制器，KHF＆lt; SUB＆gt; 2＆lt; SUB＆gt;和水。

84. 发明公开

KR1020040070989A 구리배선을 포함하는 액정표시장치용 어레이기판 제조방법 有权
标题翻译：用于制造包括铜线的液晶显示器阵列基板的方法
公开(公告)号：KR1020040070989A
公开(公告)日：2004-08-11
申请号：KR1020030007250
申请日：2003-02-05
申请人： 엘지디스플레이 주식회사
发明人： 채기성 , 조규철 , 황용섭
IPC分类号： G02F1/136
摘要： PURPOSE: A method for manufacturing an array substrate of an LCD(Liquid Crystal Display) including a copper line is provided to reduce resistance of signal lines using copper and decrease the area of the signal lines. CONSTITUTION: The first buffer layer and the first metal layer are formed on a substrate(100) and selectively etched to form a gate line(106) and a gate electrode(108) connected to the gate line. A gate insulating layer(110) is formed on the overall surface of the substrate including the gate line and gate electrode. An active layer and an ohmic contact layer are sequentially formed on a portion of the gate insulating layer, which corresponds to the gate electrode. The second buffer layer and the second metal layer are formed on the substrate and selectively etched to a data line(120), source and drain electrodes(122,124). A passivation layer(126) having a contact hole exposing a portion of the drain electrode is formed on the overall surface of the substrate. A transparent pixel electrode(130) is formed on the passivation layer to be connected to the drain electrode through the contact hole.
摘要翻译：目的：提供一种制造包括铜线的LCD（液晶显示器）的阵列基板的方法，以减少使用铜的信号线的电阻并减小信号线的面积。构成：第一缓冲层和第一金属层形成在基板（100）上并选择性地蚀刻以形成连接到栅极线的栅极线（106）和栅电极（108）。在包括栅极线和栅电极的基板的整个表面上形成栅绝缘层（110）。有源层和欧姆接触层依次形成在对应于栅电极的栅极绝缘层的一部分上。第二缓冲层和第二金属层形成在衬底上，并选择性地蚀刻到数据线（120），源极和漏极（122,124）。在衬底的整个表面上形成具有暴露漏电极的一部分的接触孔的钝化层（126）。透明像素电极（130）形成在钝化层上，以通过接触孔连接到漏电极。

85. 发明公开

KR1020040051502A 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법 有权
标题翻译：能够从铜层中去除钼析出的蚀刻溶液及其蚀刻方法
公开(公告)号：KR1020040051502A
公开(公告)日：2004-06-18
申请号：KR1020030082375
申请日：2003-11-19
申请人： 엘지디스플레이 주식회사 , 동우 화인켐 주식회사
发明人： 채기성 , 조규철 , 권오남 , 이경묵 , 황용섭 , 김성수 , 최용석 , 이승용
IPC分类号： H01L21/306
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , H01L21/32134
摘要： PURPOSE: An etching solution capable of removing molybdenum debris from a copper molybdenum layer and an etching method thereof are provided to easily control etching rate, improve tape profile, enhance the linearity of a pattern, constantly conserve the same etching characteristics, and increase the maintenance time of the etching solution. CONSTITUTION: An etching solution of a copper molybdenum layer contains a hydrogen peroxide solution of 5-30 weight%, organic acid of 0.5-5 weight%, and phosphate salt of 0.2-5 weight%. The etching solution further includes the first addictive of 0.2-5 weight%, the second addictive of 0.2-5 weight%, a fluorine compound of 0.01-1.0 weight% and deionized water.
摘要翻译：目的：提供能够从铜钼层除去钼屑的蚀刻溶液及其蚀刻方法，以便容易地控制蚀刻速率，改善胶带轮廓，增强图案的线性，同时保持相同的蚀刻特性，并增加维护蚀刻溶液的时间。构成：铜钼层的蚀刻溶液含有5-30重量％的过氧化氢溶液，0.5-5重量％的有机酸和0.2-5重量％的磷酸盐。蚀刻溶液还包括0.2-5重量％的第一上瘾剂，0.2-5重量％的第二成瘾剂，0.01-1.0重量％的氟化合物和去离子水。

86. 发明公开

KR1020040026742A 알카리 글라스를 이용한 액정표시장치 有权
标题翻译：液晶显示器件使用ALKALI玻璃
公开(公告)号：KR1020040026742A
公开(公告)日：2004-04-01
申请号：KR1020020058285
申请日：2002-09-26
申请人： 엘지디스플레이 주식회사
发明人： 조규철 , 황용섭
IPC分类号： G02F1/13
CPC分类号： G02F1/1333 , C03B29/08 , G02F1/13394 , G02F1/1341 , G02F1/136 , G02F2201/121
摘要： PURPOSE: An LCD device using alkali glass is provided to form seal patterns on a lower substrate, and to bond the lower substrate with an upper substrate, then to proceed a UV seal hardening process, thereby preventing a seal breakdown caused by thermal expansion differences between the 2 substrates. CONSTITUTION: Alignment layers(110,210) are printed on an upper substrate(300) and a lower substrate(400). Patterns of a UV hardening seal(120) are formed on the upper substrate(300) or the lower substrate(400). A spacer(130) is diffused to the lower substrate(400) or the upper substrate(300) in order to maintain an uniform gap between the upper substrate(300) and the lower substrate(400). The upper substrate(300) is bonded with the lower substrate(400). The upper substrate(300) and the lower substrate(400) configure one panel(500). A seal hardening process is performed to firmly fix the upper substrate(300) and the lower substrate(400) as the one panel(500) state.
摘要翻译：目的：提供使用碱玻璃的LCD装置，在下基板上形成密封图案，并将下基板与上基板结合，然后进行UV密封硬化工艺，从而防止由热膨胀差引起的密封破裂 2个底物。构成：对准层（110,210）印刷在上基板（300）和下基板（400）上。在上基板（300）或下基板（400）上形成UV硬化密封（120）的图案。间隔物（130）扩散到下基板（400）或上基板（300），以便在上基板（300）和下基板（400）之间保持均匀的间隙。上基板（300）与下基板（400）接合。上基板（300）和下基板（400）配置一个面板（500）。执行密封硬化处理以将上基板（300）和下基板（400）牢固地固定为一个面板（500）状态。

87. 发明授权

KR100419071B1 구리-티타늄 막의 식각용액 및 그 식각방법 有权
标题翻译： 구리 - 티타늄막의식각용액및그식각방법
公开(公告)号：KR100419071B1
公开(公告)日：2004-02-19
申请号：KR1020010035127
申请日：2001-06-20
申请人： 동우 화인켐 주식회사 , 엘지디스플레이 주식회사
发明人： 채기성 , 조규철 , 권오남 , 이경묵 , 황용섭 , 송형수 , 김기섭 , 박민춘 , 김성수
IPC分类号： C23F1/18
摘要： PURPOSE: An etching solution for copper titanium layer is provided, which has excellent taper profile against copper layer while etching copper layer and titanium layer at the same time, and has decreased attack against glass substrate and lower silicon layer, thus it is applicable to TFT LCD manufacture process. CONSTITUTION: The etching solution comprises 0.1 to 5 wt.% of inorganic oxidizers selected from the group consisting of CuCl2, Cu(NO3)2, CuSO4, Al(NO3)3, Al2(SO4)3, FeCl3, Fe2(SO4)3 and Fe(Cl4)3; 0.5 to 10 wt.% of inorganic acid or their salts; 0.05 to 0.5 wt.% of fluorine; and a balance of deionized water, and optionally 0.005 wt.% or more of additives selected from the group consisting of pyrrolidine, pyrrolin, pyrrol, indole, pyrazol, imidazol, pyrimidine, purine, pyrimidine and their derivatives.
摘要翻译：目的：提供一种铜钛层的蚀刻液，它在对铜层和钛层同时进行蚀刻的同时对铜层具有优良的锥形轮廓，并且对玻璃基板和下层硅层的侵蚀减少，因此适用于TFT LCD制造工艺。组成：蚀刻溶液包含0.1-5重量％的选自CuCl 2，Cu（NO 3）2，CuSO 4，Al（NO 3）3，Al 2（SO 4）3，FeCl 3，Fe 2（SO 4）3 和Fe（Cl4）3; 0.5至10重量％的无机酸或其盐; 0.05至0.5重量％的氟; 和余量的去离子水以及任选的0.005重量％或更多的选自吡咯烷，吡咯啉，吡咯，吲哚，吡唑，咪唑，嘧啶，嘌呤，嘧啶及其衍生物的添加剂。

88. 发明授权

KR100417915B1 액정표시장치용 어레이 기판 및 그의 제조방법 有权
标题翻译：可以在任何情况下使用
公开(公告)号：KR100417915B1
公开(公告)日：2004-02-14
申请号：KR1020010087769
申请日：2001-12-29
申请人： 엘지디스플레이 주식회사
发明人： 권오남 , 조규철
IPC分类号： G02F1/1333
摘要： PURPOSE: An array panel for an LCD(Liquid Crystal Display) device and a manufacturing method thereof are provided to improve yield rate by reducing the number of masks and enhancing the process efficiency. CONSTITUTION: A semiconductor layer(120) composed of a first active layer(120a) and an ohmic contact layer(120b) is formed by using a gate insulating film(118). Data lines(124), source and drain electrodes(126,128) and data pads(130) are formed by using pure amorphous silicon, impurity amorphous silicon and a second metal material. A drain contact hole(131), a second active layer(136) and a passivation layer(138) are sequentially formed by a third mask process. Then, the whole part of the gate line is exposed, and the gate insulating film is removed. A gate pad electrode(142), a pixel electrode(140) and a data pad electrode(144) are formed after a transparent conductive material is deposited.
摘要翻译：目的：提供用于LCD（液晶显示器）装置的阵列面板及其制造方法，以通过减少掩模的数量和提高处理效率来提高成品率。构成：通过使用栅绝缘膜（118）形成由第一有源层（120a）和欧姆接触层（120b）组成的半导体层（120）。数据线（124），源电极和漏电极（126,128）和数据焊盘（130）通过使用纯非晶硅，杂质非晶硅和第二金属材料形成。通过第三掩模工艺顺序地形成漏极接触孔（131），第二有源层（136）和钝化层（138）。然后，栅极线的整个部分被暴露，栅极绝缘膜被去除。在沉积透明导电材料之后形成栅极焊盘电极（142），像素电极（140）和数据焊盘电极（144）。

89. 发明公开

KR1020020097348A 구리-티타늄 막의 식각용액 및 그 식각방법 有权
标题翻译：铜层蚀刻解决方案及其蚀刻方法
公开(公告)号：KR1020020097348A
公开(公告)日：2002-12-31
申请号：KR1020010035127
申请日：2001-06-20
申请人： 동우 화인켐 주식회사 , 엘지디스플레이 주식회사
发明人： 채기성 , 조규철 , 권오남 , 이경묵 , 황용섭 , 송형수 , 김기섭 , 박민춘 , 김성수
IPC分类号： C23F1/18
CPC分类号： C23F1/44 , C23F1/18 , C23F1/38
摘要： PURPOSE: An etching solution for copper titanium layer is provided, which has excellent taper profile against copper layer while etching copper layer and titanium layer at the same time, and has decreased attack against glass substrate and lower silicon layer, thus it is applicable to TFT LCD manufacture process. CONSTITUTION: The etching solution comprises 0.1 to 5 wt.% of inorganic oxidizers selected from the group consisting of CuCl2, Cu(NO3)2, CuSO4, Al(NO3)3, Al2(SO4)3, FeCl3, Fe2(SO4)3 and Fe(Cl4)3; 0.5 to 10 wt.% of inorganic acid or their salts; 0.05 to 0.5 wt.% of fluorine; and a balance of deionized water, and optionally 0.005 wt.% or more of additives selected from the group consisting of pyrrolidine, pyrrolin, pyrrol, indole, pyrazol, imidazol, pyrimidine, purine, pyrimidine and their derivatives.
摘要翻译：目的：提供铜钛层蚀刻溶液，同时对铜层和钛层进行蚀刻时具有优异的锥形曲线，同时对玻璃基板和硅层的侵蚀减少，因此适用于TFT LCD制造工艺。构成：蚀刻液含有0.1〜5重量％的选自CuCl 2，Cu（NO 3）2，CuSO 4，Al（NO 3）3，Al 2（SO 4）3，FeCl 3，Fe 2（SO 4）3 和Fe（Cl4）3; 0.5〜10重量％的无机酸或其盐; 0.05〜0.5重量％的氟; 和余量的去离子水，和任选0.005重量％或更多的选自吡咯烷，吡咯啉，吡咯，吲哚，吡唑，咪唑，嘧啶，嘌呤，嘧啶及其衍生物的添加剂。

90. 发明公开

KR1020020050020A 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판 有权
标题翻译：具有由这种蚀刻溶液形成的铜相互连接的电子仪器的蚀刻解决方案和阵列基板
公开(公告)号：KR1020020050020A
公开(公告)日：2002-06-26
申请号：KR1020000079355
申请日：2000-12-20
申请人： 엘지디스플레이 주식회사
发明人： 조규철 , 채기성
IPC分类号： H01L21/306
CPC分类号： H01L29/66765 , C09K13/04 , C09K13/06 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L29/458
摘要： PURPOSE: A method for fabricating an array substrate is provided to decrease the number of process steps, by etching a metal layer composed of a dual layer including copper while using an etch solution. CONSTITUTION: A gate interconnection and a gate electrode are formed on a substrate(100). A semiconductor layer is formed on the gate electrode by interposing a gate insulation layer(124). At least one of neutral salt, inorganic acid and organic acid is mixed with hydrogen peroxide stabilizing agent to form the etch solution. A data interconnection(115) is formed of the dual metal layer composed of copper(copper alloy)/molybdenum etched at once by the etch solution. A source electrode is connected to the data interconnection. A drain electrode(136) is separated from the source electrode.
摘要翻译：目的：提供一种制造阵列基板的方法，通过在使用蚀刻溶液的同时蚀刻由包括铜的双层构成的金属层来减少工艺步骤的数量。构成：在基板（100）上形成栅极互连和栅电极。通过插入栅极绝缘层（124）在栅电极上形成半导体层。将中性盐，无机酸和有机酸中的至少一种与过氧化氢稳定剂混合以形成蚀刻溶液。数据互连（115）由由蚀刻溶液一次蚀刻的铜（铜合金）/钼组成的双金属层形成。源极连接到数据互连。漏电极（136）与源电极分离。

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