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71. 发明授权

US5329208A Surface acoustic wave device and method for producing the same 失效
标题翻译：声表面波装置及其制造方法
公开(公告)号：US5329208A
公开(公告)日：1994-07-12
申请号：US894598
申请日：1992-06-05
申请人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/02622 , Y10T29/42
摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.
摘要翻译：具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

72. 发明授权

US5320865A Method of manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5320865A
公开(公告)日：1994-06-14
申请号：US947283
申请日：1992-09-16
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H01L41/22
CPC分类号： H03H3/08 , H03H9/02582 , Y10T29/42
摘要： A method of manufacturing a surface acoustic wave device which has a smaller insertion loss and which operates at higher frequency than a conventional surface acoustic wave device is provided. The surface acoustic wave device includes a substrate, a diamond layer formed on the substrate, a piezoelectric layer formed on the diamond layer, and electrodes formed on any of the substrate, the diamond layer and the piezoelectric layer. The piezoelectric layer is formed by the laser ablation method. The insertion loss of this acoustic wave device is small even in a high frequency range of several hundreds MHz to GHz. Therefore, the device can be used as a frequency filter, a resonator, a delay line, a convolver, a correlator and the like.
摘要翻译：提供一种制造具有较小的插入损耗并且以比常规的声表面波器件更高的频率工作的声表面波器件的方法。表面声波装置包括基板，形成在基板上的金刚石层，形成在金刚石层上的压电层，以及形成在基板，金刚石层和压电层之一上的电极。压电层通过激光烧蚀法形成。即使在几百MHz至GHz的高频范围内，该声波器件的插入损耗也很小。因此，该装置可以用作频率滤波器，谐振器，延迟线，卷积器，相关器等。

73. 发明授权

US5235236A Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：US5235236A
公开(公告)日：1993-08-10
申请号：US937983
申请日：1992-08-28
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/25 , H03H3/08 , H03H9/02
CPC分类号： H03H3/08 , H03H9/02582 , H03H9/02976
摘要： Disclosed herein is a surface acoustic wave device whose characteristics can be stably maintained against temperature changes. The surface acoustic wave device has an insulating diamond layer (2), which is provided thereon with a part (3) defined by a pair of interdigital electrodes (7, 7') and a piezoelectric layer (8), and a thermistor (4) made of semi-conductive diamond. The thermistor (4) quickly detects the temperature of the device.

74. 发明授权

US5061870A Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：US5061870A
公开(公告)日：1991-10-29
申请号：US549214
申请日：1990-07-06
申请人： Hideharu Ieki , Atsushi Sakurai , Koji Kimura
发明人： Hideharu Ieki , Atsushi Sakurai , Koji Kimura
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145
CPC分类号： H03H3/08 , H03H9/02582 , H03H9/14538
摘要： A surface accoustic wave device includes a substrate which is made up of single-crystalline dielectric member and a piezoelectric thin film epitaxially grown thereon. An aluminum electrode defining an interdigital electrode is formed along the interface between the dielectric member and the piezoelectric thin film. This aluminum electrode is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode is suppressed, while enabling epitaxial growth of the piezoelectric thin film over the entire surface insert.

75. 发明申请

US20080303378A1 SURFACE ACOUSTIC WAVE (SAW) DEVICES BASED ON CUBIC BORON NITRIDE/DIAMOND COMPOSITE STRUCTURES 有权
标题翻译：基于CUBIC BORON NITRIDE / DIAMOND复合结构的表面声波（SAW）器件
公开(公告)号：US20080303378A1
公开(公告)日：2008-12-11
申请号：US11760996
申请日：2007-06-11
申请人： Shuit-Tong LEE , Wen-Jun ZHANG , You-Sheng ZOU , Igor BELLO , Kwok Leung MA , Kar Man LEUNG , Yat Ming CHONG
发明人： Shuit-Tong LEE , Wen-Jun ZHANG , You-Sheng ZOU , Igor BELLO , Kwok Leung MA , Kar Man LEUNG , Yat Ming CHONG
IPC分类号： H03H9/145 , H01L41/08 , H01L41/187 , H01L41/24
CPC分类号： H03H9/02582 , H03H9/02574
摘要： A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.
摘要翻译：公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜。具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子）化学气相沉积（PECVD）。由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

76. 发明申请

US20050001512A1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US20050001512A1
公开(公告)日：2005-01-06
申请号：US10836201
申请日：2004-05-03
申请人： Hitoshi Noguchi , Yoshihiro Kubota
发明人： Hitoshi Noguchi , Yoshihiro Kubota
IPC分类号： C23C16/27 , H01L41/08 , H01L41/09 , H03H3/02 , H03H9/02 , H03H9/25 , H03H9/64
CPC分类号： H03H9/02582 , H03H3/08
摘要： There is disclosed a surface acoustic wave device having at least a diamond film, a piezoelectric-material film, and an electrode on a base material wherein all or some part of the diamond film consists of an electroconductive diamond in which a dopant is doped. Thereby, there can be provided a surface acoustic wave device wherein breakage of the substrate due to generation of static electricity can be prevented in a device manufacturing process so that the device manufacture yield can be increased, and electrification can be prevented at the time of real use so that high performance can be maintained for a long time, even if it is a surface acoustic wave device using diamond.
摘要翻译：公开了一种表面声波装置，其至少具有金刚石膜，压电材料膜和基材上的电极，其中金刚石膜的全部或部分由掺杂掺杂剂的导电金刚石构成。因此，可以提供一种表面声波装置，其中在器件制造过程中可以防止由于静电产生导致的基板的断裂，从而可以提高器件的制造成品率，并且可以在实际的时候防止通电使用这样的高性能可以长时间保持，即使它是使用金刚石的表面声波装置。

77. 发明申请

US20030180984A1 Diamond substrate having piezoelectric thin film, and method for manufacturing it 失效
标题翻译：具有压电薄膜的金刚石基板及其制造方法
公开(公告)号：US20030180984A1
公开(公告)日：2003-09-25
申请号：US10362890
申请日：2003-02-23
发明人： Natsuo Tatsumi , Takahiro Imai
IPC分类号： H01L021/00 , H02N001/04
CPC分类号： C23C14/165 , C23C14/325 , H01L41/081 , H01L41/1873 , H01L41/316 , H03H3/08 , H03H9/02582
摘要： Further improvements in circuit-element performance of surface-acoustic wave devices are anticipated by being able to produce a diamond substrate on which is formed a Li(NbxTa1nullx)O3 (wherein 0nullxnull1) thin film whose c-axis orientation is favorable and whose piezoelectric characteristics are satisfactory. A diamond substrate on which a highly c-axis oriented, piezoelectrically satisfactory Li(NbxTa1nullx)O3 (wherein 0nullxnull1) thin film is formed can be obtained by using a laser ablation technique to form a Li(NbxTa1nullx)O3 (wherein 0nullxnull1) thin film onto a (110)-oriented gas-phase synthesized polycrystalline diamond substrate, that is superficially mirror-surface processed and superficially covered with an amorphous layer. By utilizing a diamond substrate on which a piezoelectric-substance thin film is formed, surface-acoustic wave devices having high propagation speeds can be offered.
摘要翻译：表面声波器件的电路元件性能的进一步改进可以通过能够制造金刚石衬底而形成，其上形成有Li（Nb x Ti a-x）O 3（其中0≤x≤1）的薄膜，其中c- 轴方向是有利的，其压电特性令人满意。通过使用激光烧蚀技术可以获得其上形成高度c轴取向的，压电令人满意的Li（Nb x Ti a-x）O 3（其中0 <= x <= 1））薄膜的金刚石基底，以形成Li（Nb x Ti a-x） -x）O3（其中0 <= x <= 1）薄膜到（110）取向的气相合成多晶金刚石基底上，其表面被镜面加工并且表面覆盖有非晶层。通过利用其上形成有压电物质薄膜的金刚石基板，可以提供具有高传播速度的表面声波装置。

78. 发明授权

US06222299B1 Surface acoustic wave devices comprising large-grained diamonds and methods for making 失效
标题翻译：表面声波装置包括大颗粒钻石和制造方法
公开(公告)号：US06222299B1
公开(公告)日：2001-04-24
申请号：US09020752
申请日：1998-02-09
申请人： John Edwin Graebner , Sungho Jin , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Wei Zhu
IPC分类号： H03H925
CPC分类号： H03H9/059 , H01L2224/16225 , H03H3/08 , H03H9/02582
摘要： Embodiments of the invention include an improved diamond-based surface acoustic wave (SAW) filter device. The SAW device comprises polished, large-grained diamond in combination with a piezoelectric layer to enhance the acoustic velocity and operational frequency of the SAW device with reduced loss and increased efficiency. Also, the use of a pre-polished, large-grained diamond slab reduces processing complications such as contamination or stressing of delicate device circuitry adjacent to the diamond component. Alternative embodiments of the invention include planar or vertical interconnection schemes for packaging of the SAW device and also include planarization schemes for convenient deposition and patterning of the SAW device metallization layer.
摘要翻译：本发明的实施例包括改进的基于金刚石的表面声波（SAW）滤波器装置。 SAW器件包括与压电层组合的抛光的大颗粒金刚石，以增加SAW器件的声速和操作频率，减少损耗并提高效率。此外，使用预抛光的大颗粒金刚石板可减少加工并发症，例如与金刚石部件相邻的精密器件电路的污染或应力。本发明的替代实施例包括用于SAW器件封装的平面或垂直互连方案，并且还包括用于SAW器件金属化层的方便沉积和图案化的平面化方案。

79. 发明授权

US6127768A Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Y.sub.x O piezoelectric layer device 失效
标题翻译：表面声波和使用Zn（1-X）YxO压电层器件的体声波器件
公开(公告)号：US6127768A
公开(公告)日：2000-10-03
申请号：US73995
申请日：1998-05-07
申请人： Brian R. Stoner , Robert B. Henard , David L. Dreifus , Bradley A. Fox
发明人： Brian R. Stoner , Robert B. Henard , David L. Dreifus , Bradley A. Fox
IPC分类号： H03H9/145 , H03H9/02 , H03H9/17 , H03H9/25 , H01L41/04
CPC分类号： H03H9/02582 , H03H9/02574 , H03H9/02834
摘要： The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.
摘要翻译： SAW器件包括作为波传播层的金刚石或石英衬底，波传播层上的压电层和压电层上的至少一个叉指电极。

80. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

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